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81. 发明授权

US07397030B1 Integrated local and global optical metrology for samples having miniature features 有权
标题翻译：集成的本地和全球光学测量用于具有微型特征的样品
公开(公告)号：US07397030B1
公开(公告)日：2008-07-08
申请号：US11445749
申请日：2006-06-01
申请人： Mehdi Balooch , Abdul Rahim Forouhi
发明人： Mehdi Balooch , Abdul Rahim Forouhi
IPC分类号： H01J37/00
CPC分类号： G01Q30/02
摘要： This invention relates to an apparatus and method for integrated measurement of a sample that has miniature features. The apparatus has an optical measuring unit for illuminating the sample with a global test radiation over an optical test region and obtaining an optical response, such as scattered or transmitted radiation from the optical test region. In addition, the apparatus has a local measuring unit for making a nanometer scale measurement of a local material parameter ρ of the sample. The local parameter ρ is determined with a mechanical, optical, magnetic, electric or other physical measurement performed in the nanometer range with a scanning probe tip at a test location lying within the optical test region. The material parameter ρ is selected such that it is substantially constant or uniform over the illuminated area. A computational unit determines a property of the miniature features within the optical test region from the optical response supplemented with an adjustment derived from the local material parameter obtained by the local measuring unit.
摘要翻译：本发明涉及一种具有微型特征的样本的集成测量装置和方法。该装置具有光学测量单元，用于在光学测试区域上以全局测试辐射照射样品，并获得光学响应，例如来自光学测试区域的散射或透射的辐射。此外，该装置具有用于对样品的局部材料参数rho进行纳米级测量的局部测量单元。局部参数rho通过在纳米范围内进行的机械，光学，磁性，电学或其他物理测量来确定，扫描探针尖端位于光学测试区域内的测试位置。选择材料参数rho使得其在照明区域上基本上恒定或均匀。计算单元根据补充有由本地测量单元获得的局部材料参数导出的调整的光学响应确定光学测试区域内的微型特征的属性。

82. 发明授权

US07274017B2 Electron beam apparatus and high-voltage discharge prevention method 失效
标题翻译：电子束装置及高压放电防止方法
公开(公告)号：US07274017B2
公开(公告)日：2007-09-25
申请号：US11137445
申请日：2005-05-26
申请人： Akimitsu Okura , Masashi Kimura , Kenichi Hirane , Yoshihiko Nakayama
发明人： Akimitsu Okura , Masashi Kimura , Kenichi Hirane , Yoshihiko Nakayama
IPC分类号： H01J37/00
CPC分类号： H01J37/241 , H01J2237/0206
摘要： Disclosed is an electron beam apparatus and method which can retain the state that minimizes the amount of water content contained at a gap between a high-voltage cable and a high-voltage introduction insulator to thereby prevent creation of high-voltage discharge and current leakage. The apparatus comprises a means for applying a high voltage to an acceleration electrode while eliminating electron release from an electron source and for detecting a change in an emission current corresponding to a change in an acceleration voltage at this time. In addition, the apparatus comprises a means for issuing a cautionary notice or warning when the change of this emission current exceeds a prespecified value. Further, the apparatus comprises a means for letting a dry gas flow in a gap portion between the electron gun's high-voltage cable and the high-voltage introduction insulator to thereby dehumidify said gap portion. With such an arrangement, it is possible to prevent high-voltage discharge due to an increase in water content of the gap portion and also instability of an electron beam due to a leakage current.
摘要翻译：公开了一种电子束装置和方法，其可以保持使高压电缆和高压引入绝缘体之间的间隙中含有的含水量最小化的状态，从而防止高压放电和电流泄漏的产生。该装置包括用于向加速电极施加高电压同时消除电子从电子源的释放并且用于检测与此时加速电压的变化相对应的发射电流的变化的装置。此外，该装置包括当该发射电流的变化超过预定值时发出警告通知或警告的装置。此外，该装置包括用于使干燥气体在电子枪的高压电缆和高压引入绝缘体之间的间隙部分中流动从而对所述间隙部分进行除湿的装置。通过这样的布置，可以防止由于间隙部分的水分含量增加引起的高压放电以及由于漏电流引起的电子束的不稳定性。

83. 发明授权

US07126139B2 Device and method of positionally accurate implantation of individual particles in a substrate surface 失效
标题翻译：将单个颗粒定位在衬底表面中的装置和方法
公开(公告)号：US07126139B2
公开(公告)日：2006-10-24
申请号：US10683488
申请日：2003-10-09
申请人： Thomas Schenkel , Ivo W. Rangelow , Jan Meijer
发明人： Thomas Schenkel , Ivo W. Rangelow , Jan Meijer
IPC分类号： G02B6/26 , H01J37/00
CPC分类号： H01J37/3172 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J37/3174 , H01J2237/30438 , H01J2237/30488 , H01J2237/3171 , H01J2237/31737
摘要： A device and a method for positionally accurate implantation of individual particles in a substrate surface (1a) are described. A diaphragm for a particle beam to be directed onto the substrate surface (1a) and a detector provided thereon in the form of a p-n junction for determining a secondary electron flow produced upon impact of a particle onto the substrate surface (1a) are provided on a tip (4) which is formed on a free end portion of a flexible arm (2) to be mounted on one side. The device is part of a scanning device operating according to the AFM method.
摘要翻译：描述了用于将单个颗粒定位在衬底表面（1a）中的位置精确植入的装置和方法。用于将粒子束引导到衬底表面（1a）上的膜片和以pn结形式设置在其上的检测器，用于确定在颗粒撞击到衬底表面（1a）上产生的二次电子流时，设置在安装在一侧的柔性臂（2）的自由端部上的尖端（4）上。该设备是根据AFM方法操作的扫描设备的一部分。

84. 发明授权

US07119333B2 Ion detector for ion beam applications 有权
标题翻译：用于离子束应用的离子检测器
公开(公告)号：US07119333B2
公开(公告)日：2006-10-10
申请号：US10904438
申请日：2004-11-10
申请人： Steven B. Herschbein , Narender Rana , Chad Rue , Michael R. Sievers
发明人： Steven B. Herschbein , Narender Rana , Chad Rue , Michael R. Sievers
IPC分类号： G01N23/225 , H01J37/00
CPC分类号： H01J37/244 , H01J2237/2448 , H01J2237/3174
摘要： Detection of weak ion currents scattered from a sample by an ion beam is improved by the use of a multiplier system in which a conversion electrode converts incident ions to a number of secondary electrons multiplied by a multiplication factor, the secondary electrons being attracted to an electron detector by an appropriate bias. In one version, the detector is a two stage system, in which the secondary electrons strike a scintillator that emits photons that are detected in a photon detector such as a photomultiplier or a CCD.
摘要翻译：通过使用其中转换电极将入射离子转换成多个次级电子乘以乘法因子的乘法系统来提高通过离子束从样品散射的弱离子电流的检测，二次电子被吸引到电子检测器通过适当的偏差。在一个版本中，检测器是两级系统，其中二次电子撞击发射在诸如光电倍增管或CCD的光子检测器中检测到的光子的闪烁体。

85. 发明授权

US07060995B2 Ion-implantation machine, control method thereof, and process for manufacturing integrated devices 失效
标题翻译：离子注入机，其控制方法及制造集成装置的方法
公开(公告)号：US07060995B2
公开(公告)日：2006-06-13
申请号：US10657801
申请日：2003-09-08
申请人： Camillo Bresolin , Valter Soncini , Andrea Riva
发明人： Camillo Bresolin , Valter Soncini , Andrea Riva
IPC分类号： H01J37/00
CPC分类号： H01J37/3171 , H01J37/18 , H01J2237/022
摘要： An ion-implantation machine has an implantation chamber with a vent inlet; a vacuum pump is connected to the implantation chamber through a vacuum valve. A pipe connects the vent inlet of the implantation chamber to a source of a fluid containing oxygen. The fluid containing oxygen is preferably environmental air. A flow-rate control valve is arranged on the pipe and is activated only after closing the vacuum valve.
摘要翻译：离子注入机具有具有通气口的注入室; 真空泵通过真空阀与注入室连接。管将注入室的排气入口连接到含有氧气的流体源。含氧的流体优选是环境空气。流量控制阀配置在管道上，仅在关闭真空阀后启动。

86. 发明授权

US07023003B2 Ion implanter and method of preventing undesirable ions from implanting a target wafer 失效
标题翻译：离子注入机和防止不需要的离子注入目标晶片的方法
公开(公告)号：US07023003B2
公开(公告)日：2006-04-04
申请号：US10804890
申请日：2004-03-18
申请人： Chen-Chung Li , Jui-Chun Weng , Chi-Chieh Wang , Tai-Kun Kao
发明人： Chen-Chung Li , Jui-Chun Weng , Chi-Chieh Wang , Tai-Kun Kao
IPC分类号： H01J37/00 , H01J37/08 , H01J37/20
CPC分类号： H01J37/302 , H01J37/3171
摘要： An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.
摘要翻译：提供具有离子源的离子注入机; 具有固定半径R am的AMU分析磁体; 离子提取电压源; 用于监测植入参数的通信接口; 以及具有数据日志的设备服务器。离子注入机还具有算术处理器，该算术处理器能够确定注入目标晶片的离子的圆形路径的实时估计半径R e E。使用离子注入机的方法在被注入到目标晶片中的多个离子中的每一个的AMU上提供互锁。该方法具有实时确定离子注入机是否将期望的离子注入目标晶片的步骤。此外，该方法确定R＆gt; am和＆lt;＆gt;＆lt; / SUB之间的偏移的绝对值是否超过预定的半径公差等级L，并且如果超过L则相应地调整注入机。

87. 发明授权

US07002149B2 Delay time modulation femtosecond time-resolved scanning probe microscope apparatus 失效
标题翻译：延迟时间调制飞秒时间分辨扫描探针显微镜装置
公开(公告)号：US07002149B2
公开(公告)日：2006-02-21
申请号：US10496571
申请日：2002-11-25
申请人： Hidemi Shigekawa , Osamu Takeuchi , Mikio Yamashita , Ryuji Morita
发明人： Hidemi Shigekawa , Osamu Takeuchi , Mikio Yamashita , Ryuji Morita
IPC分类号： H01J37/00
CPC分类号： G01J3/433 , G01J3/2889 , G01J2001/4242 , G01N21/6408 , G01N21/6458 , G01N2021/6415 , G01Q30/02 , G01Q60/12 , Y10S977/85
摘要： Disclosed is a measuring apparatus for a physical phenomenon by photoexcitation, in particular a delay time modulated and time-resolved, scanning probe microscope apparatus providing an ultimate resolution both temporal and spatial. The apparatus comprises an ultrashort laser pulse generator (2); a delay time modulating circuit (6) which splits an ultrashort laser pulse (3) produced by the ultrashort laser pulse generator (2) into two and which also modulates a delay time td between the two ultrashort laser pulses (4 and 5) with a frequency (ω); a scanning probe microscope (7); and a lock-in detection unit (8) which performs lock-in detection with the delay time modulation frequency (ω) of a probe signal (11) from the scanning probe microscope (7). It can detect the delay time dependency of the probe signal (11) as its differential coefficient to the delay time, with no substantial influence from fluctuations in the intensity of ultrashort laser pulses (3) while preventing the probe apex (19) from thermal expansion and shrinkage by repeated irradiation with ultrashort laser pulses (3). A photoexcited physical phenomenon dependent on a delay time between ultrashort laser pulses can thus be measured at a temporal resolution in the order of femtoseconds and at a spatial resolution in the order of angstroms.
摘要翻译：公开了一种通过光激发的物理现象的测量装置，特别是延迟时间调制和时间分辨的扫描探针显微镜装置，其提供了时间和空间上的最终分辨率。该装置包括超短激光脉冲发生器（2）; 延迟时间调制电路（6），其将由超短激光脉冲发生器（2）产生的超短激光脉冲（3）分成两个，并且还调制两个超短激光器之间的延迟时间t 具有频率（ω）的脉冲（4和5）; 扫描探针显微镜（7）; 以及锁定检测单元（8），其利用来自扫描探针显微镜（7）的探测信号（11）的延迟时间调制频率（ω）执行锁定检测。探测信号（11）的延迟时间依赖性可以作为其延迟时间的微分系数，而不会因为超短激光脉冲（3）的强度的波动带来实质的影响，同时防止探头顶点（19）的热膨胀以及通过用超短激光脉冲（3）重复照射来收缩。因此，依赖于超短激光脉冲之间的延迟时间的光激发物理现象可以以飞秒级的时间分辨率和以埃的空间分辨率测量。

88. 发明申请

US20050241767A1 Multi-piece baffle plate assembly for a plasma processing system 审中-公开
标题翻译：用于等离子体处理系统的多件挡板组件
公开(公告)号：US20050241767A1
公开(公告)日：2005-11-03
申请号：US10836516
申请日：2004-04-30
申请人： David Ferris , Aseem Srivastava , Maw Tun
发明人： David Ferris , Aseem Srivastava , Maw Tun
IPC分类号： C23F1/00 , H01J37/00 , H01J37/32
CPC分类号： H01J37/32623 , H01J37/3244 , H01J37/32633
摘要： A plasma processing system includes at least one multi-piece baffle plate. The multi-piece baffle plate assembly generally comprises at least one annular shaped ring portion having an opening and an insert portion dimensioned to sit within the opening. The individual pieces can be formed of a ceramic material. The effects caused by thermal gradients in the plate during plasma processing are minimized.
摘要翻译：等离子体处理系统包括至少一个多件挡板。多件式挡板组件通常包括至少一个环形环部分，其具有开口和尺寸适于位于开口内的插入部分。各个片可以由陶瓷材料形成。在等离子体处理期间由板中的热梯度引起的影响被最小化。

89. 发明授权

US06960772B1 Mask carrier 失效
标题翻译：面膜载体
公开(公告)号：US06960772B1
公开(公告)日：2005-11-01
申请号：US10709961
申请日：2004-06-09
申请人： Gary J. Johnson , David J. Pinckney
发明人： Gary J. Johnson , David J. Pinckney
IPC分类号： H01J37/00
CPC分类号： H01J37/20 , H01J2237/2007 , H01J2237/30438 , H01J2237/31788
摘要： A carrier for the masks used in Electron Projection Lithography, or other workpieces used in nanotechnology fields, comprises a rectangular frame having a set of four electrostatic chucks in the top surface for holding the mask above a central aperture that has an electron absorber on the bottom for suppressing backscattering; the frame being supported by a bottom carrier that grips the frame with a set of flexures flexible in the z-direction, stiff in an azimuthal direction and flexible in a radial direction.
摘要翻译：用于电子投影平版印刷术中的掩模的载体或纳米技术领域中使用的其他工件包括在顶表面中具有一组四个静电卡盘的矩形框架，用于将掩模保持在位于底部的电子吸收体的中心孔上方用于抑制后向散射; 框架由底部托架支撑，该底托架通过在z方向上具有柔性的一组挠曲来夹持框架，在方位角方向上是刚性的并且在径向上是柔性的。

90. 发明授权

US06900444B2 Adjustable implantation angle workpiece support structure for an ion beam implanter 失效
标题翻译：用于离子束注入机的可调植入角工件支撑结构
公开(公告)号：US06900444B2
公开(公告)日：2005-05-31
申请号：US10869368
申请日：2004-06-16
申请人： Joseph Ferrara , Robert John Mitchell
发明人： Joseph Ferrara , Robert John Mitchell
IPC分类号： G01J1/00 , G01N21/00 , H01J37/00 , H01J37/20 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20207 , H01J2237/20221 , H01J2237/24528 , H01L21/68764 , H01L21/68771
摘要： An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and overlaying an opening in the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having a rotating shaft that protrudes through the first member and an axis of rotation offset from an axis of rotation of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member that extends into the implantation chamber, the third member including a rotatable drive supporting the workpiece having an axis of rotation offset from the axis of rotation of the first rotation member. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.
摘要翻译：离子束注入机包括用于产生沿着束线移动的离子束的离子束源和注入室，其中工件被定位成与离子束相交，用于通过离子束离子注入工件的表面。离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构。工件支撑结构包括可旋转地联接到植入室并覆盖植入室中的开口的第一旋转构件。工件支撑结构还包括第二旋转构件，其可旋转地联接到第一旋转构件并且具有从第一构件突出的旋转轴和从第一旋转构件的旋转轴线偏移的旋转轴。工件支撑结构还包括固定地附接到第二旋转构件的第三构件，其延伸到注入室中，第三构件包括支撑工件的可旋转驱动装置，其具有偏离第一旋转构件的旋转轴线的旋转轴线。第一旋转构件，第二旋转构件和第三旋转构件的可旋转驱动器旋转以沿着用于注入植入表面的移动路径移动工件，其中在撞击植入之前离子束移动通过注入室的距离工件表面是恒定的。

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