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81. 发明授权

US09337380B2 Method for fabricating heterojunction interdigitated back contact photovoltaic cells 有权
标题翻译：异质结交叉反接触光伏电池的制造方法
公开(公告)号：US09337380B2
公开(公告)日：2016-05-10
申请号：US14218416
申请日：2014-03-18
申请人： IMEC VZW
发明人： Barry O'Sullivan
IPC分类号： H01L31/20 , H01L31/0224 , H01L31/05 , H01L31/0443 , H01L31/0216 , H01L31/068 , H01L31/18 , H01L31/028 , H01L31/0352 , H01L31/0376 , H01L31/0747 , H01L21/762 , H01L21/02
CPC分类号： H01L31/20 , H01L21/02592 , H01L21/76256 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/028 , H01L31/0352 , H01L31/03762 , H01L31/0443 , H01L31/0516 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： The disclosed technology generally relates photovoltaic devices, and more particularly to methods of fabricating heterojunction interdigitated back contact photovoltaic cells having interdigitated emitter regions and back surface field regions. In one aspect, a method of forming on a substrate a patterned n+ a-Si:H layer and a patterned p+ a-Si:H layer, the patterned n+ a-Si:H layer and the patterned p+ a-Si:H layer being interdigitated and electrically isolated from each other, the method comprising: forming a patterned p+ a-Si:H layer on the substrate, the patterned p+ a-Si:H layer covering first regions of the substrate surface and leaving second regions of the substrate surface exposed; depositing a first intrinsic a-Si:H layer on the substrate; depositing an n+ a-Si:H layer on the first intrinsic a-Si:H layer; providing a patterned masking layer covering the n+ a-Si:H layer at least in the second regions; and selectively removing the n+ a-Si:H layer and the first intrinsic a-Si:H layer in regions not covered by the masking layer and stopping at an underlying portion of the p+ a-Si:H layer substantially without removing a substantial amount of the underlying portion of the p+ a-Si:H layer, wherein selectively removing the n+ a-Si:H layer and the first intrinsic a-Si:H layer comprises etching in a solution comprising a diluted TMAH solution.
摘要翻译：所公开的技术通常涉及光伏器件，更具体地涉及制造具有交叉指示的发射极区域和背表面场区域的异质结交叉反接触光伏电池的方法。在一个方面，一种在衬底上形成图案化的n + a-Si：H层和图案化的p + a-Si：H层，图案化的n + a-Si：H层和图案化的p + a-Si：H层所述方法包括：在所述衬底上形成图案化的p + a-Si：H层，所述图案化的p + a-Si：H层覆盖所述衬底表面的第一区域并留下所述衬底的第二区域表面暴露在衬底上沉积第一本征a-Si：H层; 在第一固有a-Si：H层上沉积n + a-Si：H层; 提供至少在所述第二区域中覆盖所述n + a-Si：H层的图案化掩模层; 并且在未被掩模层覆盖的区域中并且在p + a-Si：H层的下面部分基本上没有除去大量的量的情况下选择性地除去n + a-Si：H层和第一固有a-Si：H层的p + a-Si：H层的下面部分，其中选择性地除去n + a-Si：H层和第一固有a-Si：H层包括在包含稀释的TMAH溶液的溶液中进行蚀刻。

82. 发明授权

US09331226B2 Photovoltaic device 有权
标题翻译：光伏装置
公开(公告)号：US09331226B2
公开(公告)日：2016-05-03
申请号：US14134743
申请日：2013-12-19
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Ayumu Yano , Akiyoshi Ogane
IPC分类号： H01L31/0747 , H01L31/0687 , H01L31/0376
CPC分类号： H01L31/0687 , H01L31/03762 , H01L31/0747 , Y02E10/548
摘要： A photovoltaic device is provided having a semiconductor substrate, an i-type amorphous layer formed over a front surface of the semiconductor substrate, a p-type amorphous layer formed over the i-type amorphous layer, an i-type amorphous layer formed over a back surface of the semiconductor substrate, and an n-type amorphous layer formed over the i-type amorphous layer. The i-type amorphous layer and the i-type amorphous layer have oxygen concentration profiles in which concentrations are reduced in a step-shape from regions near interfaces with the semiconductor substrate and along a thickness direction, and an oxygen concentration in the step-shape portion of the i-type amorphous layer is higher than an oxygen concentration in the step-shape portion of the i-type amorphous layer.
摘要翻译：提供一种光电器件，其具有半导体衬底，形成在半导体衬底的前表面上的i型非晶层，在i型非晶层上形成的p型非晶层，形成在i型非晶层上的i型非晶层，半导体衬底的背表面以及形成在i型非晶层之上的n型非晶层。 i型非晶层和i型非晶层具有氧浓度分布，其浓度从半导体衬底的界面附近和沿着厚度方向的区域以阶梯形减小，并且阶梯形状中的氧浓度 i型非晶层的部分高于i型非晶层的阶梯形部分中的氧浓度。

83. 发明授权

US09306107B2 Buffer layer for high performing and low light degraded solar cells 有权
标题翻译：用于高性能和低光降解太阳能电池的缓冲层
公开(公告)号：US09306107B2
公开(公告)日：2016-04-05
申请号：US13966917
申请日：2013-08-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Augustin J. Hong , Marinus J. Hopstaken , Jeehwan Kim , John A. Ott , Devendra K. Sadana
IPC分类号： H01L31/0376 , H01L31/075 , H01L31/20
CPC分类号： H01L31/03921 , H01L31/03762 , H01L31/03767 , H01L31/07 , H01L31/075 , H01L31/1884 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.
摘要翻译：形成光伏器件的方法包括在透明电极和p型层之间形成缓冲层。缓冲层包括掺杂的无锗硅基材料。缓冲层具有落在透明电极和p型层的势垒能内的功函数。在p型层上形成本征层和n型层。还提供设备。

84. 发明授权

US09236428B2 Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element 有权
标题翻译：半导体元件，半导体元件的制造方法以及包含半导体元件的半导体器件
公开(公告)号：US09236428B2
公开(公告)日：2016-01-12
申请号：US14509310
申请日：2014-10-08
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsuo Isobe , Hiromichi Godo
IPC分类号： H01L29/12 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/06 , H01L29/786 , H01L29/66 , H01L29/78 , H01L27/108 , H01L27/11
CPC分类号： H01L29/0603 , H01L27/10879 , H01L27/1104 , H01L29/12 , H01L29/66742 , H01L29/66795 , H01L29/785 , H01L29/786 , H01L2029/7858
摘要： A structure including an oxide semiconductor layer which is provided over an insulating surface and includes a channel formation region and a pair of low-resistance regions between which the channel formation region is positioned, a gate insulating film covering a top surface and a side surface of the oxide semiconductor layer, a gate electrode covering a top surface and a side surface of the channel formation region with the gate insulating film positioned therebetween, and electrodes electrically connected to the low-resistance regions is employed. The electrodes are electrically connected to at least side surfaces of the low-resistance regions, so that contact resistance with the source electrode and the drain electrode is reduced.
摘要翻译：一种包括氧化物半导体层的结构，其设置在绝缘表面上并且包括沟道形成区域和一对低电阻区域，沟道形成区域位于其间，覆盖顶表面和侧表面的栅极绝缘膜所述氧化物半导体层，覆盖所述沟道形成区域的顶表面的栅电极和位于其间的所述栅极绝缘膜的栅电极，以及电连接到所述低电阻区域的电极。电极电连接到低电阻区域的至少侧面，从而降低与源电极和漏电极的接触电阻。

85. 发明申请

US20160005914A1 Method Of Forming An Interdigitated Back Contact Solar Cell 有权
标题翻译：形成交错背接触太阳能电池的方法
公开(公告)号：US20160005914A1
公开(公告)日：2016-01-07
申请号：US14323035
申请日：2014-07-03
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Nicholas PT Bateman
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0236 , H01L31/032 , H01L31/0376
CPC分类号： H01L31/1804 , H01L31/0682 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： A method of forming an interdigitated back contact solar cell is described. The method uses a deposition process to create a doped glass layer on the substrate, which, when diffused, created either the emitter or back surface fields. The deposition process may also create an oxide layer on top of the doped glass layer. This oxide layer serves as a mask for a subsequent ion implant. This ion implant directs ions having the opposite conductivity of the doped glass layer into exposed regions of the substrate. A thermal process is used to diffuse the dopant from the doped glass layer into the substrate and repair any damage caused by the ion implant.
摘要翻译：描述了形成叉指式背接触太阳能电池的方法。该方法使用沉积工艺在衬底上产生掺杂的玻璃层，当掺杂的玻璃层在扩散时产生发射极或背表面场。沉积工艺还可以在掺杂的玻璃层的顶部上形成氧化物层。该氧化物层用作后续离子注入的掩模。该离子注入将具有相反电导率的掺杂玻璃层的离子引导到衬底的暴露区域中。使用热处理将掺杂剂从掺杂的玻璃层扩散到衬底中并修复由离子注入引起的任何损伤。

86. 发明申请

US20150372172A1 PHOTOELECTRIC CONVERSION ELEMENT 有权
标题翻译：光电转换元件
公开(公告)号：US20150372172A1
公开(公告)日：2015-12-24
申请号：US14762880
申请日：2014-03-03
申请人： SHARP KABUSHIKI KAISHA
发明人： Kenji KIMOTO
IPC分类号： H01L31/0224 , H01L31/075 , H01L31/0376
CPC分类号： H01L31/022441 , H01L31/03529 , H01L31/03762 , H01L31/0682 , H01L31/0747 , H01L31/075 , Y02E10/547
摘要： A photoelectric conversion element includes a semiconductor, an intrinsic layer disposed on the semiconductor and containing hydrogenated amorphous silicon, a first-conductivity-type layer that covers a part of the intrinsic layer and contains hydrogenated amorphous silicon of a first conductivity type, a second-conductivity-type layer that covers a part of the intrinsic layer and contains hydrogenated amorphous silicon of a second conductivity type, an insulating film covering an end region of the first-conductivity-type layer, a first electrode disposed on the first-conductivity-type layer, and a second electrode disposed on the second-conductivity-type layer. An end portion of the second-conductivity-type layer is located on the insulating film or above the insulating film.
摘要翻译：光电转换元件包括半导体，设置在半导体上并包含氢化非晶硅的本征层，覆盖本征层的一部分并且包含第一导电类型的氢化非晶硅的第一导电型层，导电型层，其覆盖本征层的一部分并且包含第二导电类型的氢化非晶硅，覆盖第一导电型层的端部区域的绝缘膜，设置在第一导电型层和设置在第二导电型层上的第二电极。第二导电型层的端部位于绝缘膜上或绝缘膜的上方。

87. 发明授权

US09196772B2 Layered element and photovoltaic device comprising such an element 有权
标题翻译：包含这种元件的层状元件和光伏器件
公开(公告)号：US09196772B2
公开(公告)日：2015-11-24
申请号：US13132045
申请日：2009-12-03
申请人： Fabien Lienhart , Emilie Steers , Erwan Mahe
发明人： Fabien Lienhart , Emilie Steers , Erwan Mahe
IPC分类号： H01L31/00 , H01L31/048 , G02B1/115 , H01L31/0216 , H01L31/0296 , H01L31/032 , H01L31/0368 , H01L31/0376
CPC分类号： H01L31/048 , G02B1/115 , H01L31/02168 , H01L31/0445 , Y02B10/12 , Y02E10/50 , Y02E10/52
摘要： This layered element, in particular for a photovoltaic device, includes a polymer layer, a moisture-sensitive layer, and a protective coating forming a moisture barrier inserted between the polymer layer and the moisture-sensitive layer. The protective coating includes an antireflection multilayer comprising at least two thin layers differing in refractive index from each other.
摘要翻译：该层状元件，特别是用于光伏器件的层状元件包括聚合物层，湿度敏感层和形成插入聚合物层和湿度敏感层之间的防潮层的保护涂层。保护涂层包括抗折叠多层，其包含至少两个折射率彼此不同的薄层。

88. 发明申请

US20150270428A1 REDUCTION OF LIGHT INDUCED DEGRADATION IN THIN FILM SILICON SOLAR CELLS 审中-公开
标题翻译：减少薄膜太阳能电池中的光诱导降解
公开(公告)号：US20150270428A1
公开(公告)日：2015-09-24
申请号：US14729984
申请日：2015-06-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： AHMED ABOU-KANDIL , AUGUSTIN J. HONG , JEEHWAN KIM , MOHAMED SAAD , DEVENDRA K. SADANA
IPC分类号： H01L31/075 , H01L31/0376 , H01L31/0224
CPC分类号： H01L31/075 , H01L31/022475 , H01L31/022483 , H01L31/03767 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A device and method for reducing degradation in a photovoltaic device includes adjusting a band offset of the device during one or more of forming an electrode, forming a first doped layer or forming an intrinsic layer. The adjusting reduces a band offset between one or more of the electrode, the first doped layer and the intrinsic layer to reduce light-induced degradation of the device. A second doped layer is formed on the intrinsic layer.
摘要翻译：用于降低光伏器件劣化的器件和方法包括在形成电极，形成第一掺杂层或形成本征层的一个或多个期间调整器件的带偏移。该调整减小了电极，第一掺杂层和本征层中的一个或多个之间的带偏移，以减少光诱导的器件劣化。在本征层上形成第二掺杂层。

89. 发明授权

US09130086B2 Light sensor and manufacturing method thereof 有权
标题翻译：光传感器及其制造方法
公开(公告)号：US09130086B2
公开(公告)日：2015-09-08
申请号：US14305043
申请日：2014-06-16
申请人： uPI semiconductor corp.
发明人： Ping-Yuan Lin
IPC分类号： H01L31/20 , H01L31/0376 , H01L31/105
CPC分类号： H01L31/03762 , H01L31/02005 , H01L31/02327 , H01L31/1055 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A light sensor and a manufacturing method thereof are disclosed. The light sensor is capable of being coupled to a carry object and includes a sensing chip and a plurality of conductive connecting elements. The sensing chip includes a first surface and a second surface opposite to each other. The sensing chip also includes a sensing unit disposed between the first surface and the second surface and at least partially exposed by a window formed on the second surface. The first surface faces the carry object when the light sensor is coupled to a carry object. The conductive connecting elements are disposed on the first surface and coupled to the sensing unit in order to couple the light sensor to the carry object.
摘要翻译：公开了一种光传感器及其制造方法。光传感器能够耦合到携带物体并且包括感测芯片和多个导电连接元件。感测芯片包括彼此相对的第一表面和第二表面。感测芯片还包括设置在第一表面和第二表面之间并且由形成在第二表面上的窗口至少部分地暴露的感测单元。当光传感器耦合到携带物体时，第一表面面向携带物体。导电连接元件设置在第一表面上并且耦合到感测单元，以将光传感器耦合到携带物体。

90. 发明申请

US20150249427A1 SOLAR CELL AND METHOD FOR CALCULATING RESISTANCE OF SOLAR CELL 审中-公开
标题翻译：太阳能电池和太阳能电池电阻计算方法
公开(公告)号：US20150249427A1
公开(公告)日：2015-09-03
申请号：US14713547
申请日：2015-05-15
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Keiichiro MASUKO
IPC分类号： H02S50/10 , H01L31/0376
CPC分类号： H02S50/10 , H01L31/022441 , H01L31/0376 , H01L31/0747 , H02S50/00 , Y02E10/50
摘要： A solar cell has a photoelectric conversion unit in which an n-type region including an n-type amorphous semiconductor layer and a p-type region including a p-type amorphous semiconductor layer are disposed in a planar manner, light such as solar light is received, and photoproduction carriers including holes and electrons are generated. Electrodes through which the photoelectrically converted electric power is taken out are also provided, and a resistance measurement unit is provided in an outer periphery of an electrode region in which the electrodes are disposed. The resistance measurement unit has two measurement electrodes extending from the n-type region and one measurement electrode extending from the p-type region, and the measurement electrodes are disposed with a predetermined inter-electrode space therebetween.
摘要翻译：太阳能电池具有光电转换单元，其中包括n型非晶半导体层的n型区域和包括p型非晶半导体层的p型区域以平面方式设置，诸如太阳光的光是产生包含空穴和电子的光生产载体。还提供了通过其进行光电转换的电力的电极，并且电阻测量单元设置在其中设置电极的电极区域的外周。电阻测量单元具有从n型区域延伸的两个测量电极和从p型区域延伸的一个测量电极，并且测量电极之间设置有预定的电极间间隔。

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