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1. 发明授权

US11611008B2 Multi-junction laminated laser photovoltaic cell 有权
公开(公告)号：US11611008B2
公开(公告)日：2023-03-21
申请号：US17428640
申请日：2019-06-21
申请人： SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES
发明人： Jianrong Dong , Yurun Sun , Yongming Zhao , Shuzhen Yu
IPC分类号： H01L31/0687 , H01L31/0693 , H01L31/0304
摘要： A multi junction laminated laser photovoltaic cell includes a cell unit laminated body and upper and lower electrodes electrically connected with the bottom and top of the cell unit laminated body, respectively, wherein the cell unit laminated body includes more than 6 laminated PN-junction subcells, adjacent two subcells are connected in series via tunnel junctions, wherein each PN-junction subcell uses a semiconductor single crystal material with a specific band gap as the absorption layer, the multiple subcells at least have two different band gaps, and the band gaps of the subcells are arranged in such an order that they decrease successively from the light incidence side to other side of the photovoltaic cell.

2. 发明授权

US11588066B2 Tandem solar cells having a top or bottom metal chalcogenide cell 有权
公开(公告)号：US11588066B2
公开(公告)日：2023-02-21
申请号：US17288689
申请日：2019-11-05
申请人： The Board of Trustees of the Leland Stanford Junior University
发明人： Koosha Nassiri Nazif , Raisul Islam , Jin-Hong Park , Krishna C. Saraswat
IPC分类号： H01L31/0725 , H01L31/032 , H01L31/055 , H01L31/028 , H01L31/0304 , H01L31/0687 , H01L31/07 , H01L31/072
摘要： Tandem solar cell configurations are provided where at least one of the cells is a metal chalcogenide cell. A four-terminal tandem solar cell configuration has two electrically independent solar cells stacked on each other. A two-terminal solar cell configuration has two electrically coupled solar cells (same current through both cells) stacked on each other. Carrier selective contacts can be used to make contact to the metal chalcogenide cell (s) to alleviate the troublesome Fermi level pinning issue. Carrier-selective contacts can also remove the need to provide doping of the metal chalcogenide. Doping of the metal chalcogenide can be provided by charge transfer. These two ideas can be practiced independently or together in any combination.

3. 发明申请

US20220406958A1 SOLAR CELL AND SOLAR CELL MODULE INCLUDING THE SAME 有权
公开(公告)号：US20220406958A1
公开(公告)日：2022-12-22
申请号：US17776715
申请日：2020-10-15
申请人： KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
发明人： Donghwan KIM , Hae-Seok LEE , Yoonmook KANG , Soohyun BAE , Sang-Won LEE , HyunJung PARK , Jae-Keun HWANG , Wonkyu LEE , Jiyeon HYUN , Solhee LEE
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0687
摘要： Disclosed are a solar cell including an upper cell includes an upper passivation layer disposed on an upper surface of a functional layer, a transparent electrode disposed on an upper surface of the upper passivation layer, an upper first charge transport layer disposed on an upper surface of the transparent electrode, an upper electrode disposed on the upper first of the transparent electrode to be adjacent to the upper surface charge transport layer, an upper second charge transport layer disposed on the upper surface of the functional layer to be spaced apart from the upper passivation layer, the transparent electrode, the upper first charge transport layer, and the upper electrode, and an upper absorption layer disposed on the upper passivation layer, the transparent electrode, the upper first charge transport layer, and the upper second charge transport layer.

4. 发明申请

US20220406952A1 Longpass Distributed Bragg Reflector (LPDBR) 有权
公开(公告)号：US20220406952A1
公开(公告)日：2022-12-22
申请号：US17807549
申请日：2022-06-17
申请人： Stephen Polly , Julia D'Rozario , George Nelson , Seth Hubbard
发明人： Stephen Polly , Julia D'Rozario , George Nelson , Seth Hubbard
IPC分类号： H01L31/0687 , H01L31/056 , H01L31/054 , H01L31/0693 , H01L31/18
摘要： A reflector including a substrate and a plurality of alternating layers of two materials having different indices of refraction disposed on the substrate, wherein the reflector exhibits a central peak in reflectance vs wavelength and the reflectance of the high-energy side-lobes is increased in intensity and the reflectance of the low-energy side-lobes is reduced in intensity and method for making the reflector is disclosed.

5. 发明授权

US11417788B2 Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells 有权
公开(公告)号：US11417788B2
公开(公告)日：2022-08-16
申请号：US12950912
申请日：2010-11-19
申请人： Robyn L. Woo , Daniel C. Law , Joseph Charles Boisvert
发明人： Robyn L. Woo , Daniel C. Law , Joseph Charles Boisvert
IPC分类号： H01L31/0693 , H01L31/0735 , H01L31/0304 , H01L31/0687 , H01L29/88
摘要： A type-II tunnel junction is disclosed that includes a p-doped AlGaInAs tunnel layer and a n-doped InP tunnel layer. Solar cells are further disclosed that incorporate the high bandgap type-II tunnel junction between photovoltaic subcells.

6. 发明授权

US11387377B2 Multijunction solar cell assembly for space applications 有权
公开(公告)号：US11387377B2
公开(公告)日：2022-07-12
申请号：US17031130
申请日：2020-09-24
申请人： SolAero Technologies Corp.
发明人： Daniel Derkacs , Jeff Steinfeldt
IPC分类号： H01L31/0725 , H01L31/0687 , H01L31/0304 , H01L31/05 , H01L31/18
摘要： A multijunction solar cell assembly and its method of manufacture including first and second discrete and different semiconductor solar cells which are electrically interconnected to form a four or five junction solar cell assembly.

7. 发明授权

US11349039B2 Axially-integrated epitaxially-grown tandem wire arrays 有权
公开(公告)号：US11349039B2
公开(公告)日：2022-05-31
申请号：US16130157
申请日：2018-09-13
申请人： California Institute of Technology
发明人： Nathan S. Lewis , Shu Hu
IPC分类号： H01L31/18 , C25B1/55 , C25B9/19 , H01L31/0352 , H01L31/0687 , H01L31/078 , C01B13/02
摘要： A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions.

8. 发明申请

US20220140783A1 HIGH CONCENTRATING SOLAR DEVICE WITH PASSIVE COOLING 有权
公开(公告)号：US20220140783A1
公开(公告)日：2022-05-05
申请号：US17088695
申请日：2020-11-04
申请人： Imam Abdulrahman Bin Faisal University
发明人： Fahad G. AL-AMRI
IPC分类号： H02S40/42 , H02S40/22 , H02S20/32 , H01L31/054 , H01L31/0687 , H01L31/0725
摘要： A method of passive cooling for a high concentrating photovoltaic, the high concentrating photovoltaic, includes a photovoltaic receiver, a parabolic dish reflector and a plurality of thermally conductive heat pipes having a direct thermal contact between the receiver and the reflector to transfer excessive heat. The method includes receiving sunlight by the parabolic dish reflector, reflecting the sunlight towards the photovoltaic receiver that converts the sunlight into electricity and heat, transferring the heat through the thermally conductive heat pipes and absorbing the heat by the reflector serving a dual purpose as a heat sink. A reduction in weight and cost is accomplished by incorporating the flat heat pipes.

9. 发明授权

US11271133B2 Multi-junction optoelectronic device with group IV semiconductor as a bottom junction 有权
公开(公告)号：US11271133B2
公开(公告)日：2022-03-08
申请号：US15957446
申请日：2018-04-19
申请人： UTICA LEASECO, LLC
发明人： Brendan M. Kayes , Gang He
IPC分类号： H01L31/0687 , H01L31/18 , H01L31/028 , H01L33/00 , H01L33/04 , H01L33/30
摘要： A multi-junction optoelectronic device and method of manufacture are disclosed. The method comprises providing a first p-n structure on a substrate, wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a Group III-V semiconductor. The method includes providing a second p-n structure, wherein the second p-n structure comprises a second base layer of a second semiconductor with a second bandgap, wherein a lattice constant of the second semiconductor matches a lattice constant of the first semiconductor, and wherein the second semiconductor comprises a Group IV semiconductor. The method also includes lifting off the substrate the multi-junction optoelectronic device having the first p-n structure and the second p-n structure, wherein the multi-junction optoelectronic device is a flexible device.

10. 发明授权

US11257972B2 Solar cell 有权
公开(公告)号：US11257972B2
公开(公告)日：2022-02-22
申请号：US16491425
申请日：2018-02-06
申请人： PETALUX INC.
发明人： Do Yeol Ahn , Seung Hyun Yang
IPC分类号： H01L31/0687 , H01L31/076 , H01L31/032
摘要： A solar cell that capable of improving light utilization efficiency is disclosed. The solar cell comprises I-VII compound photovoltaic layer, silicon photovoltaic layer, first electrode and second electrode. The I-VII compound photovoltaic layer comprises first and second type I-VII compound layers. The first and second type I-VII compound layer have first and second type impurities, respectively. The second type I-VII compound layer is disposed under the first type I-VII compound layer. The silicon photovoltaic layer comprises first and second type silicon layers. The first and second type silicon layers have first and second type dopants, respectively. The first type and second type silicon layers are disposed under the second type I-VII compound layer and the first type silicon layer, respectively. The first and second electrodes are formed under the second type silicon layer and on a portion of the first type I-VII compound layer, respectively.

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