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    • 87. 发明授权
    • Method for driving liquid ejector
    • 驱动液体喷射器的方法
    • US07896456B2
    • 2011-03-01
    • US11993010
    • 2006-06-23
    • Shuzo IwashitaSin IshikuraTakayuki YamamotoHisamitsu Sakai
    • Shuzo IwashitaSin IshikuraTakayuki YamamotoHisamitsu Sakai
    • B41J29/38B41J2/045H01L41/00H02N2/00
    • B41J2/14233B41J2/04525B41J2/04581B41J2/04588B41J2002/14266
    • A method for driving a liquid drop ejector (1) equipped with a piezoelectric actuator (7) including a piezoelectric ceramic layer (6) having a size covering a plurality of pressurizing chambers (2). An arbitrary piezoelectric deformation region (8) of the liquid drop ejector (1) is deflected in one thickness direction and the opposite direction, respectively, by applying a driving voltage waveform including a first voltage (−VL) and an equivalent second voltage (+VL) of the opposite polarity in order to vary the volume of the pressurizing chambers (2) of a corresponding liquid drop ejecting portion (4), and a liquid drop is ejected through a communicating nozzle (3). Since gradual creep deformation of the inactive region (16) of the piezoelectric ceramic layer (6) is prevented, the ink drop ejection performance is maintained at a good level over a long term.
    • 一种用于驱动装有压电致动器(7)的液滴喷射器(1)的方法,所述压电致动器包括具有覆盖多个加压室(2)的尺寸的压电陶瓷层(6)。 通过施加包括第一电压(-VL)和等效第二电压(+)的驱动电压波形,液滴喷射器(1)的任意压电变形区域(8)分别沿一个厚度方向和相反方向偏转, VL),以改变相应的液滴喷射部分(4)的加压室(2)的体积,并且通过连通喷嘴(3)喷射液滴。 由于防止压电陶瓷层(6)的非活性区域(16)的逐渐蠕变变形,所以墨滴喷射性能长期保持在良好的水平。
    • 89. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE
    • 半导体器件和半导体器件的制造方法
    • US20100320873A1
    • 2010-12-23
    • US12817674
    • 2010-06-17
    • Toma FujitaHaruhiko NishikageHironobu Kawauchi
    • Toma FujitaHaruhiko NishikageHironobu Kawauchi
    • H01L41/00H01L21/467
    • B81B3/0086B81B2203/0118G01C19/5755G01C19/5769G01P15/125
    • There are disclosed a semiconductor device in which a short circuit between an oscillator and a semiconductor substrate is prevented, the semiconductor device being capable of suppressing an increase of fabrication steps, and a method of fabricating the semiconductor device. The semiconductor device includes: a semiconductor substrate, in which a recessed portion is formed on an upper surface, and a semiconductor layer is exposed to a bottom surface of the recessed portion; an oscillator that has a beam-type movable electrode arranged in the recessed portion, the movable electrode having insulating films arranged on side surfaces and lower surface thereof, and is fixed to the semiconductor substrate at a position apart from the movable electrode; and a beam-type fixed electrode that is arranged in the recessed portion so as to be opposed to the movable electrode, and is fixed to the semiconductor substrate so as to be electrically isolated from the movable electrode.
    • 公开了一种半导体器件,其中防止振荡器和半导体衬底之间的短路,该半导体器件能够抑制制造步骤的增加,以及制造半导体器件的方法。 半导体器件包括:半导体衬底,其中在上表面上形成凹部,半导体层暴露于凹部的底面; 具有布置在所述凹部中的光束型可动电极的振荡器,所述可动电极具有布置在其侧表面和下表面上的绝缘膜,并且在远离所述可动电极的位置处固定到所述半导体基板; 以及与所述可动电极相对配置在所述凹部中并固定到所述半导体基板以与所述可动电极电隔离的光束型固定电极。