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1. 发明申请

US20190214965A1 RF FILTERS AND RESONATORS OF CRYSTALLINE III-N FILMS 审中-公开
公开(公告)号：US20190214965A1
公开(公告)日：2019-07-11
申请号：US16327720
申请日：2016-09-30
申请人： INTEL CORPORATION
发明人： Sansaptak Dasgupta , Bruce A. Block , Paul B. Fischer , Han Wui Then , Marko Radosavljevic
IPC分类号： H03H9/205 , H03H9/13 , H03H9/02 , H03H9/58 , H03H3/02
CPC分类号： H03H9/205 , H03H3/02 , H03H9/02015 , H03H9/02031 , H03H9/02086 , H03H9/02157 , H03H9/132 , H03H9/172 , H03H9/587 , H03H9/6436 , H03H2003/0071 , H03H2003/021
摘要： A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint.

2. 发明申请

US20190207584A1 CRYSTAL OSCILLATING ELEMENT, CRYSTAL OSCILLATION DEVICE, AND METHOD OF MANUFACTURING CRYSTAL OSCILLATING ELEMENT 审中-公开
公开(公告)号：US20190207584A1
公开(公告)日：2019-07-04
申请号：US16320942
申请日：2017-07-25
申请人： KYOCERA Corporation
发明人： Shiro MIYAZAKI , Masahiko GOTO , Yoshiyuki KAWAGUCHI , Hiroshi HAYASHI
IPC分类号： H03H9/19 , H03H3/02 , H03H9/13 , H01L41/09 , H01L41/332
CPC分类号： H03H9/19 , H01L41/09 , H01L41/332 , H03H3/02 , H03H9/13
摘要： The oscillating element includes a crystal blank, a pair of excitation electrodes, and a pair of pad portions. The crystal blank includes a pair of major surfaces, at least partially configured by crystal planes, and side surfaces which connect outer edges of the pair of major surfaces. Further, it includes a mesa portion and an outer peripheral portion which surrounds the mesa portion and has a thickness between the pair of major surfaces thinner than that of the mesa portion. The excitation electrodes are individually located on the pair of major surfaces. The pair of pad portions are located on one of the pairs of major surfaces and are electrically connected with the excitation electrodes. At least a portion of an edge part which is in contact with a crystal plane includes a projecting portion, which does not exceed the height of the mesa portion from the outer peripheral portion.

3. 发明申请

US20190132942A1 INTEGRATION OF THROUGH GLASS VIA (TGV) FILTER AND ACOUSTIC FILTER 审中-公开
公开(公告)号：US20190132942A1
公开(公告)日：2019-05-02
申请号：US15798071
申请日：2017-10-30
申请人： QUALCOMM Incorporated
发明人： Changhan Hobie YUN , Jonghae KIM , Xiaoju YU , Mario Francisco VELEZ , Wei-Chuan CHEN , Niranjan Sunil MUDAKATTE , Matthew Michael NOWAK , Christian HOFFMANN , Rodrigo PACHER FERNANDES , Manuel HOFER , Peter BAINSCHAB , Edgar SCHMIDHAMMER , Stefan Leopold HATZL
IPC分类号： H05K1/02 , H03H9/02 , H05K3/32
CPC分类号： H05K1/0233 , H03H3/02 , H03H3/08 , H03H9/02086 , H03H9/0547 , H03H9/1014 , H03H9/1071 , H05K3/32
摘要： A passive on glass (POG) on filter capping apparatus may include an acoustic filter die. The apparatus may further include a capping die electrically coupled to the acoustic filter die. The capping die may include a 3D inductor.

4. 发明申请

US20190007020A1 BULK ACOUSTIC WAVE RESONATORS HAVING CONVEX SURFACES, AND METHODS OF FORMING THE SAME 审中-公开
公开(公告)号：US20190007020A1
公开(公告)日：2019-01-03
申请号：US15639552
申请日：2017-06-30
申请人： Texas Instruments Incorporated
发明人： Ting-Ta Yen
IPC分类号： H03H9/02 , H03H9/17
CPC分类号： H03H9/0211 , H03H3/02 , H03H9/02015 , H03H9/02047 , H03H9/02157 , H03H9/172 , H03H2003/021 , H03H2003/025
摘要： Bulk acoustic wave (BAW) resonators having convex surfaces, and methods of forming the same are disclosed. An example BAW resonator includes a first electrode, a piezoelectric layer formed on the first electrode, the piezoelectric layer having a convex surface, and a second electrode formed on the convex surface. An example integrated circuit (IC) package includes a BAW resonator disposed in the IC package, the BAW resonator including a piezoelectric layer having a convex surface.

5. 发明申请

US20180358948A1 SPURIOUS-MODE-FREE, LATERALLY-VIBRATING MICROELECTRO-MECHANICAL SYSTEM RESONATORS 审中-公开
公开(公告)号：US20180358948A1
公开(公告)日：2018-12-13
申请号：US15434829
申请日：2017-02-16
申请人： The Board of Trustees of the University of Illinois
发明人： Songbin Gong , Yong-Ha Song
IPC分类号： H03H9/02 , H03H9/17 , H03H9/56 , H03H3/02
CPC分类号： H03H9/02086 , H03H3/02 , H03H9/02015 , H03H9/02157 , H03H9/02228 , H03H9/02259 , H03H9/02992 , H03H9/171 , H03H9/564 , H03H9/568 , H03H2003/021 , H03H2003/027
摘要： A micro-resonator includes a first electrode positioned on a piezoelectric plate at a first end of the piezoelectric plate, the first electrode including a first set of fingers and a second electrode positioned on the piezoelectric plate at a second end of the piezoelectric plate. The second electrode including a second set of fingers interdigitated with the first set of fingers with an overlapping distance without touching the first set of fingers, the overlapping distance being less than seven-tenths the length of one of the first set of fingers or the second set of fingers. At least one of the first end or the second end of the piezoelectric plate may define a curved shape.

6. 发明申请

US20180309422A1 5.2 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT 审中-公开
公开(公告)号：US20180309422A1
公开(公告)日：2018-10-25
申请号：US16019267
申请日：2018-06-26
申请人： Akoustis, Inc.
发明人： Jeffrey B. SHEALY , Michael HODGE , Rohan W. HOULDEN , Shawn R. GIBB , Mary WINTERS , Ramakrishna VETURY , David AICHELE
IPC分类号： H03H3/02 , H03H9/00 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/205 , H03H9/54 , H03H9/56 , H01L41/187 , H01L41/047 , H01L27/20 , H01L41/29 , H01L41/332
CPC分类号： H03H3/02 , H01L27/20 , H01L41/0475 , H01L41/0477 , H01L41/187 , H01L41/29 , H01L41/332 , H03H9/0095 , H03H9/02031 , H03H9/02118 , H03H9/0523 , H03H9/0533 , H03H9/1014 , H03H9/105 , H03H9/173 , H03H9/175 , H03H9/205 , H03H9/542 , H03H9/562 , H03H9/564 , H03H2003/021 , H03H2003/025
摘要： An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

7. 发明申请

US20180278228A1 METHOD FOR FABRICATING RF RESONATORS AND FILTERS 审中-公开
公开(公告)号：US20180278228A1
公开(公告)日：2018-09-27
申请号：US15494904
申请日：2017-04-24
申请人： Crystal Waves LABs Limited
发明人： Dror Hurwitz
IPC分类号： H03H3/02 , H03H9/56 , H01L41/107
CPC分类号： H03H3/02 , H03H9/1014 , H03H9/562 , H03H9/564 , H03H9/581 , H03H9/582
摘要： A method of fabricating an RF filter comprising an array of resonators comprising the steps of: Obtaining a removable carrier with release layer; Growing a piezoelectric film on a removable carrier; Applying a first electrode to the piezoelectric film; Obtaining a backing membrane on a cover, with or without prefabricated cavities between the backing film and cover; Attaching the backing membrane to the first electrode; Detaching the removable carrier; Measuring and trimming the piezoelectric film as necessary; Selectively etching away the piezoelectric layer to fabricate discrete resonator islands; Etching down through coatings and backing membrane to a silicon dioxide layer between the backing membrane and the cover to form trenches; Applying a passivation layer into the trenches and around the piezoelectric islands; Depositing a second electrode layer over the piezoelectric film islands and surrounding passivation layer; Applying connections for subsequent electrical coupling to an interposer; Selectively removing second electrode material leaving coupled resonator arrays; Creating a gasket around perimeter of the resonator array; Thinning down cover to desired thickness; Optionally fabricating upper cavities between the backing membrane and cover by drilling holes through the cover and then selectively etching away the silicon dioxide; Dicing the wafer into flip chip single unit filter arrays; Obtaining an interposer; Optionally applying a dam to the interposer surface to halt overfill flow; Coupling the flip chip single unit filter array to pads of the interposer by reflow of the solder cap; Encapsulating with polymer underfill/overfill; and Singulating into separate filter modules.

8. 发明申请

US20180275485A1 METHOD OF FABRICATION FOR SINGLE CRYSTAL PIEZOELECTRIC RF RESONATORS AND FILTERS 审中-公开
公开(公告)号：US20180275485A1
公开(公告)日：2018-09-27
申请号：US15679879
申请日：2017-08-17
申请人： Dror Hurwitz
发明人： Dror Hurwitz
IPC分类号： G02F1/35 , G02F1/39 , H03H9/56 , H03H9/02 , H03H3/02 , H01S3/00 , H03B17/00
CPC分类号： G02F1/353 , G02F1/39 , H01S3/0092 , H03B17/00 , H03H3/02 , H03H9/02118 , H03H9/02228 , H03H9/0523 , H03H9/1014 , H03H9/562 , H03H9/587 , H03H9/588 , H03H9/605 , H03H2003/021 , H03H2003/023 , H04B2210/006
摘要： 1. A method of fabricating an RF filter comprising an array of resonators comprising the steps of: Obtaining a removable carrier with release layer; Growing a piezoelectric film on a removable carrier; Applying a first electrode to the piezoelectric film; Obtaining a backing membrane on a cover, with or without prefabricated cavities between the backing film and cover; Attaching the backing membrane to the first electrode; Detaching the removable carrier; Measuring and trimming the piezoelectric film as necessary; Selectively etching away the piezoelectric layer to fabricate discrete resonator islands; Etching down through coatings and backing membrane to a silicon dioxide layer between the backing membrane and the cover to form trenches; Applying a passivation layer into the trenches and around the piezoelectric islands; Depositing a second electrode layer over the piezoelectric film islands and surrounding passivation layer; Applying connections for subsequent electrical coupling to an interposer; Selectively removing second electrode material leaving coupled resonator arrays; Creating a gasket around perimeter of the resonator array; Thinning down cover to desired thickness; Optionally fabricating upper cavities between the backing membrane and cover by drilling holes through the cover and then selectively etching away the silicon dioxide; Dicing the wafer into flip chip single unit filter arrays; Obtaining an interposer; Optionally applying a dam to the interposer surface to halt overfill flow; Coupling the flip chip single unit filter array to pads of the interposer by reflow of the solder cap; Encapsulating with polymer underfill/overfill; and Singulating into separate filter modules, wherein wherein the piezoelectric layer comprises a mixed AlN single crystal layer a c-axis orientation.

9. 发明授权

US10084428B2 Elastic wave device and method for manufacturing the same 有权
公开(公告)号：US10084428B2
公开(公告)日：2018-09-25
申请号：US14932182
申请日：2015-11-04
申请人： Murata Manufacturing Co., Ltd.
发明人： Ryo Otsubo , Koji Yamamoto
IPC分类号： H03H9/02 , H03H9/145 , H03H3/02 , H03H3/10 , H03H9/10
CPC分类号： H03H9/02992 , H03H3/02 , H03H3/10 , H03H9/02574 , H03H9/1071 , H03H9/14541
摘要： An IDT electrode of an elastic wave device includes a first electrode film made of Al or mainly containing Al, a second electrode film with a density larger than that of the first electrode film, an anti-diffusion film which is located between the first electrode film and the second electrode film and which significantly reduces or prevents interdiffusion between the first electrode film and the second electrode film, and a first Ti film located between the first electrode film and the anti-diffusion film, to diffuse a diffusion material into the first electrode film.

10. 发明申请

US20180262180A1 FILM BULK ACOUSTIC RESONATOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180262180A1
公开(公告)日：2018-09-13
申请号：US15808662
申请日：2017-11-09
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Tae Kyung LEE , Jin Suk SON , Sung Sun KIM , Je Hong KYOUNG , Hwa Sun LEE , Ran Hee SHIN
IPC分类号： H03H9/17 , H01L41/16 , H01L41/18 , H01L41/29 , H01L41/39
CPC分类号： H03H9/17 , H01L41/16 , H01L41/183 , H01L41/187 , H01L41/29 , H01L41/39 , H03H3/02 , H03H9/02015 , H03H9/173 , H03H2003/021
摘要： A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

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