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81. 发明授权

US08917134B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08917134B2
公开(公告)日：2014-12-23
申请号：US14057213
申请日：2013-10-18
申请人： Renesas Electronics Corporation
发明人： Kenji Amada
IPC分类号： H03K17/56 , H01L27/02
CPC分类号： H02P27/06 , B60L3/00 , H01L27/092 , H01L2224/48137 , H01L2224/4903 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2924/1305 , H01L2924/13091 , H02M1/32 , H02M7/003 , H02M7/5387 , H03K17/6871 , H01L2924/00
摘要： A semiconductor device includes a control section, a first arm, and a second arm; and has an H-bridge circuit to supply an input current supplied from a power source to an output terminal as a reversible electric current on the basis of a control signal outputted from the control section and a reverse-connection-time backflow prevention circuit to prevent an electric current in a direction opposite to the direction of the input current from being supplied to the H-bridge circuit. The first arm is formed over a first island. The second arm is formed over a second island. The control section and the reverse-connection-time backflow prevention circuit are formed over a third island.
摘要翻译：半导体器件包括控制部分，第一臂和第二臂; 并且具有H桥电路，其基于从控制部分输出的控制信号和反向连接时间回流防止电路来将从电源提供的输入电流提供给输出端子作为可逆电流，以防止与输入电流方向相反的方向的电流被提供给H桥电路。第一只手臂在第一个岛上形成。第二个臂形成在第二个岛上。控制部和反连接时回退电路形成在第三岛上。

82. 发明授权

US08816751B2 Inductive load power switching circuits 有权
标题翻译：感性负载功率开关电路
公开(公告)号：US08816751B2
公开(公告)日：2014-08-26
申请号：US13959483
申请日：2013-08-05
申请人： Transphorm Inc.
发明人： James Honea , Yifeng Wu
IPC分类号： H03K17/56
CPC分类号： G05F1/70 , H03K17/08142 , Y10T29/41 , Y10T29/49117
摘要： Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor.
摘要翻译：描述了包括电感负载和开关装置的功率开关电路。开关器件可以是低端或高端开关。一些开关是当晶体管上施加电压时能够阻挡电压或防止大量电流流过晶体管的晶体管。

83. 发明授权

US08816264B2 CMOS image sensor switch circuit for reduced charge injection 有权
标题翻译： CMOS图像传感器开关电路用于减少电荷注入
公开(公告)号：US08816264B2
公开(公告)日：2014-08-26
申请号：US13563181
申请日：2012-07-31
申请人： Guangbin Zhang , Dennis Lee
发明人： Guangbin Zhang , Dennis Lee
IPC分类号： H03K17/56
CPC分类号： H03K17/162 , H04N5/374 , H04N5/378
摘要： A switch circuit including structures to reduce the effects of charge injection. In an embodiment, a first transistor of the switch circuit is to receive a first signal and first and second dummy transistors of the switch circuit are each to receive a second signal, wherein the first transistor is connected between the first and second dummy transistors. The second signal is complementary to the first signal. In another embodiment, the first transistor, the first dummy transistor and the second dummy transistors are each connected via respective body connections to a first low supply voltage.
摘要翻译：一种包括减少电荷注入效应的结构的开关电路。在一个实施例中，开关电路的第一晶体管是接收第一信号，开关电路的第一和第二虚拟晶体管各自接收第二信号，其中第一晶体管连接在第一和第二虚拟晶体管之间。第二信号与第一信号互补。在另一个实施例中，第一晶体管，第一虚拟晶体管和第二虚拟晶体管各自经由相应的主体连接连接到第一低电源电压。

84. 发明授权

US08779837B2 Load control device 有权
标题翻译：负载控制装置
公开(公告)号：US08779837B2
公开(公告)日：2014-07-15
申请号：US13910454
申请日：2013-06-05
申请人： Panasonic Corporation
发明人： Kiyoshi Gotou , Masanori Hayashi , Takashi Kishida , Kouji Yamato
IPC分类号： H03K17/56
CPC分类号： H03K17/06 , H03K17/0412 , H03K17/689 , H03K2017/6878
摘要： A load control device includes a switching unit which is connected to a power source and a load in series and has a switch device having a transistor structure, a control unit configured to control start-up and stop of the load, and a gate driving unit, which is electrically insulated from the control unit and outputs a gate driving signal to the gate electrode of the switch device. The control unit controls the gate driving unit to supply a higher driving power to the gate electrode of the switch device for a predetermined period of time starting at the start-up of the load than that in a steady state.
摘要翻译：负载控制装置包括：开关单元，其连接到电源和负载串联，并具有具有晶体管结构的开关装置;控制单元，被配置为控制负载的启动和停止;以及栅极驱动单元，其与控制单元电绝缘，并将栅极驱动信号输出到开关器件的栅电极。所述控制单元控制所述栅极驱动单元，从所述负载启动开始至所述稳定状态下的预定时间段，向所述开关装置的栅电极提供较高的驱动电力。

85. 发明申请

US20140185346A1 HYBRID POWER DEVICES AND SWITCHING CIRCUITS FOR HIGH POWER LOAD SOURCING APPLICATIONS 审中-公开
标题翻译：用于高功率负载源应用的混合动力装置和开关电路
公开(公告)号：US20140185346A1
公开(公告)日：2014-07-03
申请号：US13729943
申请日：2012-12-28
申请人： EATON CORPORATION
发明人： Yu Liu , Andraw Ho , Nash Lee , Slobodan Krstic
IPC分类号： H03K17/56 , H01L29/739 , H02M7/537 , H01L29/16
CPC分类号： H02M3/155 , H01L29/1602 , H01L29/1608 , H01L29/7393 , H02M7/487 , H02M7/537 , H03K17/127 , H03K17/56 , H03K17/567 , H03K2217/0036
摘要： A hybrid switching circuit includes first and second switching devices containing first and second unequal bandgap semiconductor materials. These switching devices, which support parallel conduction in response to first and second control signals, are three or more terminal switching devices of different type. For example, the first switching device may be a three or more terminal wide bandgap switching device selected from a group consisting of JFETs, IGFETs and high electron mobility transistors HEMTs, and the second switching device may be a Si-IGBT. A control circuit is also provided, which is configured to drive the first and second switching devices with first and second periodic control signals having first and second unequal duty cycles. The first duty cycle may be greater than the second duty cycle and the active phases of the second periodic control signal may occur exclusively within the active phases of the first periodic control signal.
摘要翻译：混合开关电路包括包含第一和第二不等带隙半导体材料的第一和第二开关器件。响应于第一和第二控制信号支持并行传导的这些开关装置是三种或更多种不同类型的端子开关装置。例如，第一开关器件可以是从由JFET，IGFET和高电子迁移率晶体管HEMT组成的组中选择的三个或更多个终端宽带隙开关器件，并且第二开关器件可以是Si-IGBT。还提供了一种控制电路，其被配置为利用具有第一和第二不等工作周期的第一和第二周期性控制信号驱动第一和第二开关装置。第一占空比可以大于第二占空比，并且第二周期控制信号的有效相位可以专门发生在第一周期性控制信号的有效相位内。

86. 发明申请

US20140126090A1 HIGH-VOLTAGE POWER GATING 有权
标题翻译：高电压电源
公开(公告)号：US20140126090A1
公开(公告)日：2014-05-08
申请号：US13669204
申请日：2012-11-05
申请人： Christopher P. Mozak , Hong Yun Tan
发明人： Christopher P. Mozak , Hong Yun Tan
IPC分类号： H03K17/56 , H02H9/04
CPC分类号： H02H9/046 , H03K17/102 , H03K17/223
摘要： Power gating circuits. A transistor stack is coupled between a voltage supply to provide a gated supply voltage. The supply voltage is greater than the maximum junction voltage of the individual transistors in the transistor stack. Termination circuitry for input/output (I/O) lines coupled to operate using the gated supply voltage. The termination circuitry comprising at least a resistive element coupled between an I/O interface and a termination voltage supply.
摘要翻译：电源门控电路。晶体管堆叠耦合在电压源之间以提供门控电源电压。电源电压大于晶体管堆叠中单个晶体管的最大结电压。用于输入/输出（I / O）线的端接电路，其耦合以使用门控电源电压进行操作。所述终端电路至少包括耦合在I / O接口和终端电压源之间的电阻元件。

87. 发明授权

US08648643B2 Semiconductor power modules and devices 有权
标题翻译：半导体电源模块和器件
公开(公告)号：US08648643B2
公开(公告)日：2014-02-11
申请号：US13405041
申请日：2012-02-24
申请人： Yifeng Wu
发明人： Yifeng Wu
IPC分类号： H03K17/56
CPC分类号： H01L25/50 , H01L23/12 , H01L23/3675 , H01L23/49822 , H01L23/49827 , H01L23/49844 , H01L23/552 , H01L23/642 , H01L25/074 , H01L25/117 , H01L25/16 , H01L25/165 , H01L27/0883 , H01L29/2003 , H01L29/7827 , H01L2224/48091 , H01L2924/13055 , H01L2924/30107 , H03K17/164 , H03K2217/0045 , H05K1/0218 , H05K1/0263 , H05K1/162 , H05K2201/10015 , H05K2201/10166 , H05K2201/10545 , H01L2924/00014 , H01L2924/00
摘要： An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a second transistor encased in a second package, the second transistor being mounted over a second conductive portion of the second package. The component further includes a substrate comprising an insulating layer between a first metal layer and a second metal layer. The first package is on one side of the substrate with the first conductive portion being electrically connected to the first metal layer, and the second package is on another side of the substrate with the second conductive portion being electrically connected to the second metal layer. The first package is opposite the second package, with at least 50% of a first area of the first conductive portion being opposite a second area of the second conductive portion.
摘要翻译：描述了一种电子部件，其包括封装在第一封装中的第一晶体管，第一晶体管安装在第一封装的第一导电部分上，以及封装在第二封装中的第二晶体管，第二晶体管安装在第二导电第二包装的部分。所述部件还包括在第一金属层和第二金属层之间包括绝缘层的基板。所述第一封装在所述基板的一侧，所述第一导电部分与所述第一金属层电连接，所述第二封装在所述基板的另一侧，所述第二导电部分与所述第二金属层电连接。第一封装与第二封装相对，第一导电部分的第一区域的至少50％与第二导电部分的第二区域相对。

88. 发明申请

US20140034808A1 CMOS IMAGE SENSOR SWITCH CIRCUIT FOR REDUCED CHARGE INJECTION 有权
标题翻译：用于降低充电注入的CMOS图像传感器开关电路
公开(公告)号：US20140034808A1
公开(公告)日：2014-02-06
申请号：US13563181
申请日：2012-07-31
申请人： Guangbin Zhang , Dennis Lee
发明人： Guangbin Zhang , Dennis Lee
IPC分类号： H03K17/56 , H01L27/146
CPC分类号： H03K17/162 , H04N5/374 , H04N5/378
摘要： A switch circuit including structures to reduce the effects of charge injection. In an embodiment, a first transistor of the switch circuit is to receive a first signal and first and second dummy transistors of the switch circuit are each to receive a second signal, wherein the first transistor is connected between the first and second dummy transistors. The second signal is complementary to the first signal. In another embodiment, the first transistor, the first dummy transistor and the second dummy transistors are each connected via respective body connections to a first low supply voltage.
摘要翻译：一种包括减少电荷注入效应的结构的开关电路。在一个实施例中，开关电路的第一晶体管是接收第一信号，开关电路的第一和第二虚拟晶体管各自接收第二信号，其中第一晶体管连接在第一和第二虚拟晶体管之间。第二信号与第一信号互补。在另一个实施例中，第一晶体管，第一虚拟晶体管和第二虚拟晶体管各自经由相应的主体连接连接到第一低电源电压。

89. 发明授权

US08638158B2 Signal transmitting apparatus 有权
标题翻译：信号发送装置
公开(公告)号：US08638158B2
公开(公告)日：2014-01-28
申请号：US13576292
申请日：2010-02-01
申请人： Hidetoshi Morishita , Masaki Wasekura
发明人： Hidetoshi Morishita , Masaki Wasekura
IPC分类号： H03K17/56
CPC分类号： H04L25/0276
摘要： A signal transmitting apparatus that may suppress generation of a noise voltage attributable to a common mode voltage is provided. A transistor P1 is connected between a first terminal of a sending coil and a power supply voltage. A transistor N1 is connected between the first terminal and a ground voltage. A transistor P2 is connected between a second terminal of the sending coil and the power supply voltage. A transistor N2 is connected between the second terminal and the ground voltage. In a period-PE1 a coil current flowing in a positive direction is generated by turning on the transistors P1 and N2 and turning off the transistors P2 and N1, and then the transistor N1 is turned on in response to turning off the transistor P1. In a period PE2, a coil current flowing in a negative direction is generated by turning off the transistors P1 and N2 and turning on the transistors P2 and N1, and then the transistor N2 is turned on in response to turning off the transistor P2.
摘要翻译：提供了可以抑制归因于共模电压的噪声电压的产生的信号发送装置。晶体管P1连接在发送线圈的第一端子和电源电压之间。晶体管N1连接在第一端子和接地电压之间。晶体管P2连接在发送线圈的第二端子和电源电压之间。晶体管N2连接在第二端子和接地电压之间。在周期-PE1中，通过导通晶体管P1和N2并关断晶体管P2和N1，然后响应于截止晶体管P1而导通晶体管N1来产生沿正方向流动的线圈电流。在时间段PE2中，通过截止晶体管P1和N2并导通晶体管P2和N1，然后响应于截止晶体管P2而导通晶体管N2，产生沿负方向流动的线圈电流。

90. 发明申请

US20140015593A1 RF Switch, Mobile Communication Device and Method for Switching an RF Signal 有权
标题翻译：射频开关，移动通信设备和用于切换RF信号的方法
公开(公告)号：US20140015593A1
公开(公告)日：2014-01-16
申请号：US13545822
申请日：2012-07-10
申请人： Franz Weiss , Hans Taddiken , Nikolay Ilkov , Winfried Bakalski , Jochen Essel , Herbert Kebinger
发明人： Franz Weiss , Hans Taddiken , Nikolay Ilkov , Winfried Bakalski , Jochen Essel , Herbert Kebinger
IPC分类号： H03K17/56 , H03K17/687
CPC分类号： H03K17/102 , H03K17/693
摘要： An RF switch includes a switchable RF transistor. The switchable RF transistor includes a stripe of a plurality of adjacent RF transistor fingers and at least one non-switchable dummy transistor that is arranged at an end of the stripe of the switchable RF transistor.
摘要翻译： RF开关包括可切换RF晶体管。可切换RF晶体管包括多个相邻RF晶体管指状物的条纹和布置在可切换RF晶体管的条带末端的至少一个不可切换的虚设晶体管。

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