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1. 发明授权

US09973184B2 Radio-frequency devices with gate node voltage compensation 有权
公开(公告)号：US09973184B2
公开(公告)日：2018-05-15
申请号：US15002170
申请日：2016-01-20
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Anuj Madan , Fikret Altunkilic , Guillaume Alexandre Blin
IPC分类号： H03K17/06 , H01L29/40 , H01L27/088 , H01L27/12 , H03K17/693 , H01L23/66 , H04B1/40 , H01L27/06
CPC分类号： H03K17/063 , H01L23/66 , H01L27/0629 , H01L27/088 , H01L27/1203 , H01L29/401 , H01L2223/6677 , H01L2224/05554 , H01L2224/48091 , H01L2224/49171 , H01L2924/0002 , H01L2924/15184 , H01L2924/15192 , H01L2924/181 , H03K17/06 , H03K17/693 , H03K2217/0018 , H04B1/40 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Radio-frequency (RF) devices are disclosed having transistor gate voltage compensation to provide improved switching performance. RF devices, such as switches, include a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate. A compensation network including a coupling circuit couples the gates of each pair of neighboring FETs.

2. 发明申请

US20180115311A1 Configurable Clamp Circuit 审中-公开
公开(公告)号：US20180115311A1
公开(公告)日：2018-04-26
申请号：US15332873
申请日：2016-10-24
申请人： Infineon Technologies Austria AG
发明人： Karl Norling , Erwin Huber
IPC分类号： H03K17/16 , H03K5/08 , H03K17/687 , G05F3/02
CPC分类号： H03K17/168 , G05F3/02 , H03K5/08 , H03K17/06 , H03K17/6872 , H03K2017/066
摘要： In accordance with an embodiment of the present invention, a circuit includes a configurable clamp driver circuit for clamping a voltage at a gate terminal of a transistor below a turn-on voltage threshold upon switch-off of the transistor. In a first clamp driver circuit mode, an output terminal of the clamp driver circuit is configured to be coupled to the gate terminal of the transistor to provide a first discharge path from the gate terminal of the transistor upon switch-off of the transistor. In a second clamp driver circuit mode, the output terminal of the clamp driver circuit is configured to be coupled to an input terminal of a clamp circuit, wherein the clamp circuit is coupled to the gate terminal of the transistor to provide a second discharge path from the gate terminal of the transistor upon switch-off of the transistor.

3. 发明申请

US20180076712A1 SWITCHING DEVICE AND POWER SUPPLY CIRCUIT 有权
公开(公告)号：US20180076712A1
公开(公告)日：2018-03-15
申请号：US15446955
申请日：2017-03-01
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kohei HASEGAWA , Takenori YASUZUMI
IPC分类号： H02M3/158
CPC分类号： H02M3/158 , H02M1/088 , H02M1/38 , H02M3/156 , H03K17/06 , H03K17/122 , H03K2017/6875 , H03K2217/0036
摘要： A switching device includes first and switching elements connected in series, a capacitor connected to a gate of the first switching element, a diode having an anode connected between the capacitor and the gate of the first switching element and a cathode connected to a source of the first switching element. A capacitance of the capacitor is equal to or greater than a value calculated by a predetermined expression.

4. 发明申请

US20170279444A1 COMBINED ISOLATOR AND POWER SWITCH 审中-公开
公开(公告)号：US20170279444A1
公开(公告)日：2017-09-28
申请号：US15216498
申请日：2016-07-21
申请人： Analog Devices Global
发明人： Edward John Coyne , Patrick Martin McGuinness , William Allan Lane , Lawrence O'Sullivan
IPC分类号： H03K17/567 , H02P27/06 , H02M7/217 , H01L27/06 , H02M7/537
CPC分类号： H03K17/567 , H01L27/0623 , H02M7/217 , H02M7/537 , H02P27/06 , H03K17/06 , H03K2017/066
摘要： A combined isolator and power switch is disclosed. Such devices are useful in isolating low voltage components such as control compilers from motors or generators working at high voltages. The combined isolator and power switch includes circuits to transfer internal power from its low voltage side to the switch driver circuits on the high voltage side. The combined isolator and switch is compact and easy to use.

5. 发明申请

US20170155383A1 POWER AMPLIFIER SATURATION DETECTION 审中-公开
公开(公告)号：US20170155383A1
公开(公告)日：2017-06-01
申请号：US15346023
申请日：2016-11-08
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Paul Raymond Andrys , Michael Lynn Gerard , Terrence John Shie
IPC分类号： H03K17/06 , H03G3/30 , H03F3/213 , H03F1/02 , H03F3/195
CPC分类号： H03K17/06 , G11C7/067 , H03F1/0216 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/213 , H03F3/24 , H03F2200/171 , H03F2200/451 , H03G3/007 , H03G3/3042 , H03G11/02 , H04B2001/0408
摘要： In a portable radio transceiver, a power amplifier system includes a saturation detector that detects power amplifier saturation in response to duty cycle of the amplifier transistor collector voltage waveform. The saturation detection output signal can be used by a power control circuit to back off or reduce the amplification level of the power amplifier to avoid power amplifier control loop saturation.

6. 发明申请

US20160226478A1 Circuit and Method for Controlling Charge Injection in Radio Frequency Switches 有权
公开(公告)号：US20160226478A1
公开(公告)日：2016-08-04
申请号：US14987360
申请日：2016-01-04
申请人： Peregrine Semiconductor Corporation
发明人： Alexander Dribinsky , Tae Youn Kim , Dylan J. Kelly , Christopher N. Brindle
IPC分类号： H03K17/16 , H03K17/687
CPC分类号： H03K17/161 , H03K17/04 , H03K17/06 , H03K17/08 , H03K17/102 , H03K17/284 , H03K17/6874 , H03K17/689 , H03K2217/0009
摘要： A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

7. 发明申请

US20160149569A1 A GATE DRIVE CIRCUIT AND A METHOD FOR SETTING UP A GATE DRIVE CIRCUIT 有权
标题翻译：门控驱动电路和用于设置门控驱动电路的方法
公开(公告)号：US20160149569A1
公开(公告)日：2016-05-26
申请号：US14899506
申请日：2013-07-04
申请人： Thierry SICARD , Philippe PERRUCHOUD
发明人： THIERRY SICARD , PHILIPPE PERRUCHOUD
IPC分类号： H03K17/567
CPC分类号： H03K17/567 , H02M7/5387 , H03K17/06
摘要： A gate drive circuit includes a first switch and a first capacitor. A first terminal of the first capacitor is electrically coupled to the first switch. The first switch is electrically coupled between the first terminal and a voltage supply of the power transistor. A second terminal of the first capacitor is electrically coupled to the reference potential. The gate drive circuit further includes a first voltage limiter in parallel with the first capacitor. The first voltage limiter limits a voltage across the first capacitor to a first predetermined voltage. The gate drive circuit further includes a second capacitor, a pre-charging circuit arranged between the first terminal of the first capacitor and a first terminal of the second capacitor. The gate drive circuit further includes a third capacitor with a first terminal electrically coupled to a second terminal of the second capacitor and a second terminal electrically coupled to a gate terminal of the power transistor.
摘要翻译：栅极驱动电路包括第一开关和第一电容器。第一电容器的第一端子电耦合到第一开关。第一开关电耦合在第一端子和功率晶体管的电压源之间。第一电容器的第二端子电耦合到参考电位。栅极驱动电路还包括与第一电容器并联的第一限压器。第一限压器将第一电容器两端的电压限制到第一预定电压。栅极驱动电路还包括第二电容器，布置在第一电容器的第一端子和第二电容器的第一端子之间的预充电电路。栅极驱动电路还包括具有电耦合到第二电容器的第二端子的第一端子的第三电容器和电耦合到功率晶体管的栅极端子的第二端子。

8. 发明授权

US09172367B2 Drive unit for switching element 有权
标题翻译：开关元件驱动单元
公开(公告)号：US09172367B2
公开(公告)日：2015-10-27
申请号：US13892829
申请日：2013-05-13
申请人： DENSO CORPORATION
发明人： Junichi Fukuta , Tsuneo Maebara , Ryotaro Miura , Takeyasu Komatsu
IPC分类号： H02P6/08 , H02M1/08 , H03K17/30 , H03K17/06
CPC分类号： H03K17/30 , H03K17/06 , H03K2017/066
摘要： In a drive unit for a switching element, a drive circuit changes the switching element between an on-state and an off-state, by controlling a potential difference between a reference terminal, which is one of a pair of ends of a current path of the switching element, and an opening-closing control terminal of the switching element. A determination section determines, if an on-operation command or an off-operation command is inputted as an operation signal for the switching element, whether or not the potential difference has reached a specific value toward which the potential difference shifts, in response to one of the operation commands, with respect to a threshold value by which the switching element is turned on. A forcible processing section removes charge for turning on the switching element from the opening-closing control terminal, if the determination section determines that the potential difference has not reached the specific value.
摘要翻译：在用于开关元件的驱动单元中，驱动电路通过控制参考端子之间的电位差来控制开关元件的导通状态和截止状态之间的电位差，开关元件和开关元件的开闭控制端子。确定部分确定如果输入操作命令或关闭操作命令作为开关元件的操作信号，则响应于一个电位差，电位差是否达到电位差移动的特定值关于开关元件导通的阈值的操作命令。如果确定部分确定电位差未达到特定值，则强制处理部分去除从开闭控制端子接通开关元件的电荷。

9. 发明授权

US09007100B2 High-side semiconductor-switch low-power driving circuit and method 有权
标题翻译：高边半导体开关低功耗驱动电路及方法
公开(公告)号：US09007100B2
公开(公告)日：2015-04-14
申请号：US14495605
申请日：2014-09-24
申请人： Infineon Technologies Austria AG
发明人： Michael Asam , Helmut Herrmann
IPC分类号： H03K3/00 , H03K3/012 , H02M3/07
CPC分类号： H03K3/012 , H02M1/08 , H02M3/07 , H03K17/06 , H03K19/018521 , H03K2217/0063 , H03K2217/0081
摘要： A high-side semiconductor-switch driving method includes generating power for controlling a high side semiconductor switch. The high side semiconductor switch has a control terminal and the power allows a current to flow into the control terminal of the high side semiconductor switch to switch the high side semiconductor switch. The voltage at the control terminal of the high side semiconductor switch is quantified. The power dependent on the voltage at the control terminal of the high side semiconductor switch is controlled so that the current provided is increased when the voltage at the control terminal indicates that the current is not sufficient to switch the high side semiconductor switch.
摘要翻译：高边半导体开关驱动方法包括发电用于控制高侧半导体开关。高侧半导体开关具有控制端子，并且功率允许电流流入高侧半导体开关的控制端子以切换高侧半导体开关。量化高侧半导体开关的控制端子处的电压。控制与高侧半导体开关的控制端子处的电压相关的功率，使得当控制端子处的电压指示电流不足以切换高侧半导体开关时，提供的电流增加。

10. 发明申请

US20150054569A1 SWITCH CIRCUIT 有权
标题翻译：开关电路
公开(公告)号：US20150054569A1
公开(公告)日：2015-02-26
申请号：US14192375
申请日：2014-02-27
申请人： Kabushiki Kaisha Toshiba
发明人： Makoto Arai
IPC分类号： H03K17/16
CPC分类号： H03K17/164 , H03K17/06 , H03K2017/066
摘要： According to one embodiment, a switch circuit includes a transmission unit configured to transmit a signal through a transistor, in which a back gate and a source are connected by way of a resistor; and a back gate control unit configured to connect the back gate of the transistor to a fixed potential when the transistor is turned OFF, and to separate the back gate of the transistor from the fixed potential when the transistor is turned ON.
摘要翻译：根据一个实施例，开关电路包括被配置为通过晶体管传输信号的传输单元，其中背栅极和源极通过电阻器连接; 以及背栅控制单元，被配置为当晶体管截止时将晶体管的背栅连接到固定电位，并且在晶体管导通时将晶体管的背栅与固定电位分离。

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