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1. 发明授权

US10972821B2 MEMS microphone system with low pressure gap and back volume 有权
公开(公告)号：US10972821B2
公开(公告)日：2021-04-06
申请号：US16600728
申请日：2019-10-14
申请人： Akustica, Inc. , Robert Bosch GmbH
发明人： Daniel Meisel , Andrew Doller
IPC分类号： H04R1/04 , B81B7/00 , B81B7/02
摘要： A MEMS microphone system comprises a transducer die having a pierce-less diaphragm and a motion sensor suspended from the diaphragm. The system further comprises a housing and the diaphragm divided a volume inside the housing into a front volume and a back volume. The motion sensor suspended from the diaphragm is located in the back volume having a gas pressure that is substantially equal or lower than an ambient pressure.

2. 发明授权

US10295576B2 Ratiometric biasing for high impedance capacitive sensing 有权
公开(公告)号：US10295576B2
公开(公告)日：2019-05-21
申请号：US15873809
申请日：2018-01-17
申请人： Robert Bosch GmbH
发明人： Matthew A. Zeleznik , Anthony T. Zisko
IPC分类号： H03F3/345 , G01R19/00 , G01D5/24 , H03F1/26
摘要： A biasing circuit for a capacitive sensor includes a capacitive sensor element configured to produce a sensor voltage at a sense node, and a preamplifier connected to the sense node and configured to amplify the sensor voltage. The biasing circuit has an auxiliary amplifier connected between an output of the preamplifier and the sense node and configured to set a DC component of an input voltage for the preamplifier to a ratiometric DC bias voltage.

3. 发明授权

US07824943B2 Methods for trapping charge in a microelectromechanical system and microelectromechanical system employing same 有权
标题翻译：用于在微机电系统中捕获电荷的方法和使用其的微机电系统
公开(公告)号：US07824943B2
公开(公告)日：2010-11-02
申请号：US11446851
申请日：2006-06-04
申请人： Markus Lutz , Aaron Partridge , Brian H. Stark
发明人： Markus Lutz , Aaron Partridge , Brian H. Stark
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01H85/04 , B81B3/0021 , B81B3/0086
摘要： Many inventions are disclosed. Some aspects are directed to MEMS, and/or methods for use with and/or for fabricating MEMS, that supply, store, and/or trap charge on a mechanical structure disposed in a chamber. Various structures may be disposed in the chamber and employed in supplying, storing and/or trapping charge on the mechanical structure. In some aspects, a breakable link, a thermionic electron source and/or a movable mechanical structure are employed. The breakable link may comprise a fuse. In one embodiment, the movable mechanical structure is driven to resonate. In some aspects, the electrical charge enables a transducer to convert vibrational energy to electrical energy, which may be used to power circuit(s), device(s) and/or other purpose(s). In some aspects, the electrical charge is employed in changing the resonant frequency of a mechanical structure and/or generating an electrostatic force, which may be repulsive.
摘要翻译：许多发明被公开。一些方面涉及用于和/或制造MEMS的MEMS，和/或用于在设置在室中的机械结构上提供，存储和/或捕获电荷的方法。各种结构可以设置在室中并用于在机械结构上供应，储存和/或捕集电荷。在一些方面，采用易碎连接件，热离子电子源和/或可移动机械结构。可破坏的连接件可以包括保险丝。在一个实施例中，可移动机械结构被驱动以共振。在一些方面，电荷使得换能器将振动能量转换成电能，其可用于为电路，设备和/或其他目的供电。在一些方面，电荷用于改变机械结构的谐振频率和/或产生可能是排斥性的静电力。

4. 发明授权

US07763488B2 Method of fabricating MEMS device 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US07763488B2
公开(公告)日：2010-07-27
申请号：US11446398
申请日：2006-06-05
申请人： Jason P. Goodelle , Kaigham J. Gabriel
发明人： Jason P. Goodelle , Kaigham J. Gabriel
IPC分类号： H01L21/00
CPC分类号： B81C1/00333 , B81B2201/0257 , B81B2207/096 , B81C2203/0109 , H01L2224/48091 , H01L2924/10253 , H01L2924/1461 , H04R1/04 , H04R19/016 , H04R31/006 , H01L2924/00014 , H01L2924/00
摘要： A MEMS device includes a chip carrier having an acoustic port extending from a first surface to a second surface of the chip carrier, a MEMS die disposed on the chip carrier to cover the acoustic port at the first surface of the chip carrier, and an enclosure bonded to the chip carrier and encapsulating the MEMS die.
摘要翻译： MEMS器件包括具有从芯片载体的第一表面延伸到第二表面的声学端口的芯片载体，设置在芯片载体上以覆盖芯片载体的第一表面处的声学端口的MEMS管芯，以及壳体结合到芯片载体并封装MEMS管芯。

5. 发明授权

US06936524B2 Ultrathin form factor MEMS microphones and microspeakers 有权
公开(公告)号：US06936524B2
公开(公告)日：2005-08-30
申请号：US10701860
申请日：2003-11-05
申请人： Xu Zhu , Raymond A. Ciferno
发明人： Xu Zhu , Raymond A. Ciferno
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H04R19/00
CPC分类号： H04R19/005 , B81C1/00182 , Y10S438/977
摘要： A process comprises reducing the thickness of a substrate carrying a plurality of devices, with at least certain of the devices having a micro-machined mesh. A carrier wafer is attached to the back side of the substrate and the fabrication of the devices is completed from the top side of the substrate. Thereafter the plurality of devices is singulated. Various alternative embodiments are disclosed which demonstrate that the thinning of the wafer may occur at different times during the process of fabricating the MEMS devices such as before the mesh is formed or after the mesh is formed. Additionally, the use of carrier wafers to support the thinned wafer enables process steps to be carried out on the side opposite from the side having the carrier wafer. The various alternative embodiments demonstrate that the side carrying the carrier wafer can be varied throughout the process.

6. 发明授权

US11012789B2 MEMS microphone system 有权
公开(公告)号：US11012789B2
公开(公告)日：2021-05-18
申请号：US16021511
申请日：2018-06-28
申请人： Robert Bosch Gmbh , Akustica, Inc.
发明人： Christoph Hermes , Bernhard Gehl , Arnim Hoechst , Daniel Meisel , Andrew Doller , Yujie Zhang , Gokhan Hatipoglu
IPC分类号： H04R19/04 , H04R19/00 , H04R7/10 , H04R31/00
摘要： A MEMS microphone includes a substrate, a lower membrane supported on the substrate, an upper membrane suspended above the lower membrane, a first electrode supported on the lower membrane, and a second electrode supported on the upper membrane. The lower membrane and the upper membrane enclose a cavity in which the first electrode and the second electrode are located. The lower membrane and the upper membrane are each formed of silicon carbonitride (SiCN). The first electrode and the second electrode are each formed of polysilicon.

7. 发明授权

US08405449B2 Resettable high-voltage capable high impedance biasing network for capacitive sensors 有权
标题翻译：用于电容式传感器的可复位高压能力高阻抗偏置网络
公开(公告)号：US08405449B2
公开(公告)日：2013-03-26
申请号：US13040466
申请日：2011-03-04
申请人： John M. Muza
发明人： John M. Muza
IPC分类号： G05F1/10
CPC分类号： H04R19/005
摘要： A high-voltage MEMS biasing network. The network has a reset mode wherein a capacitive sensor is charged, and a functional mode wherein the MEMS biasing network provides a high impedance between the capacitive sensor and a bias voltage source. The network includes a biasing circuit, a mirror circuit, and a control circuit. The biasing circuit and the mirror circuit have a charging state and a high impedance state. The control circuit includes a first branch that controls the biasing circuit and a second branch that controls the mirror circuit. The biasing network receives a logic control signal, the first branch puts the biasing circuit into the charging state when the logic control signal is a first logic signal, and puts the biasing circuit into the high impedance state when the logic control signal is a second logic signal.
摘要翻译：高压MEMS偏压网络。网络具有其中电容传感器被充电的复位模式，以及其中MEMS偏压网络在电容传感器和偏置电压源之间提供高阻抗的功能模式。网络包括偏置电路，反射镜电路和控制电路。偏置电路和反射镜电路具有充电状态和高阻抗状态。控制电路包括控制偏置电路的第一分支和控制镜电路的第二分支。偏置网络接收逻辑控制信号时，当逻辑控制信号为第一逻辑信号时，第一分支将偏置电路置于充电状态，当逻辑控制信号为第二逻辑时，使偏置电路处于高阻抗状态信号。

8. 发明授权

US08144906B2 Wind immune microphone 有权
标题翻译：风免疫麦克风
公开(公告)号：US08144906B2
公开(公告)日：2012-03-27
申请号：US12314609
申请日：2008-12-12
申请人： Michael James Daley , Andrew Jonathan Doller , Todd Martin Keebler
发明人： Michael James Daley , Andrew Jonathan Doller , Todd Martin Keebler
IPC分类号： H04R25/00 , H04R9/08 , G10K11/16
CPC分类号： H04R1/086 , H04R2201/003 , H04R2410/07
摘要： Disclosed is an acoustic device comprising an enclosed housing defining an inner volume and having a front and a back; an acoustic port penetrating the front of the enclosed housing; a first and second sense structure attached to the inside of the housing and defining a gap between the first and second sense structures; a front volume defined by the portion of the inner volume between the first sense structure and the front of the housing; a back volume defined by the portion of the inner volume between the second sense structure and the back of the housing; and at least one vent in the first sense structure operatively connecting the front volume and the gap, wherein the acoustic device has a cutoff frequency above approximately 100 Hz.
摘要翻译：公开了一种声学装置，其包括限定内部容积并具有前部和后部的封闭壳体; 穿过封闭壳体前部的声学口; 第一和第二感测结构，其附接到壳体的内部并且限定第一和第二感测结构之间的间隙; 由所述第一感测结构和所述壳体的前部之间的所述内部容积的所述部分限定的前部容积; 由所述第二感测结构和所述壳体的背面之间的所述内部容积的所述部分限定的后部体积; 并且所述第一感测结构中的至少一个通气口可操作地连接所述前体积和所述间隙，其中所述声学装置具有高于约100Hz的截止频率。

9. 发明申请

US20080006889A1 Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same 有权
标题翻译：具有屏障的单片MEMS和集成电路器件及其制造方法
公开(公告)号：US20080006889A1
公开(公告)日：2008-01-10
申请号：US11446397
申请日：2006-06-05
申请人： Brett M. Diamond , Matthew A. Zeleznik
发明人： Brett M. Diamond , Matthew A. Zeleznik
IPC分类号： H01L29/82 , H01L27/14 , H01L29/84
CPC分类号： B81C1/00246 , B81B2201/0257 , B81B2207/015 , B81B2207/07 , B81C2203/0778 , H01L23/564 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit device includes a semiconductor die, the semiconductor die including a semiconductor substrate, driving/control circuitry disposed along a peripheral region of the semiconductor die, a MEMS device disposed within a central region of the semiconductor die, and a barrier disposed between the driving/control circuitry and the MEMS device.
摘要翻译：集成电路器件包括半导体管芯，半导体管芯包括半导体衬底，沿着半导体管芯的周边区域设置的驱动/控制电路，设置在半导体管芯的中心区域内的MEMS器件，驱动/控制电路和MEMS器件。

10. 发明授权

US07049051B2 Process for forming and acoustically connecting structures on a substrate 有权
标题翻译：用于在基底上形成和声学连接结构的方法
公开(公告)号：US07049051B2
公开(公告)日：2006-05-23
申请号：US10349618
申请日：2003-01-23
申请人： Kaigham J. Gabriel , Xu Zhu
发明人： Kaigham J. Gabriel , Xu Zhu
IPC分类号： G03C5/00
CPC分类号： B81C1/00158 , A61K8/0208 , A61K2800/33 , A61K2800/58 , A61K2800/72 , A61K2800/75 , A61K2800/94 , B81B2201/0257 , H04R19/005
摘要： The present invention describes a processes that builds an acoustic cavity, a chamber, and vent openings for acoustically connecting the chamber with the acoustic cavity. The dry etch processes may include reactive ion etches, which include traditional parallel plate RIE dry etch processes, advanced deep and inductively coupled plasma RIE processes. Three embodiments for connecting the chamber to the cavity from the top side of the substrate, e.g. by using pilot openings formed using at least a portion of the mesh as an etch mask, by forming the vent openings using at least a portion of the mesh as an etch mask, or by having the chamber intersect the vent openings as the chamber is being formed, illustrate how the disclosed process may be modified. By forming the cavity on the back side of the substrate, the depth of the vent holes is decreased. Additionally, using at least a portion of the micro-machined mesh as an etch mask for the vent holes makes the process self-aligning.
摘要翻译：本发明描述了构建声腔，腔室和用于将腔室与声腔声学连接的通气孔的方法。干蚀刻工艺可以包括反应离子蚀刻，其包括传统的平行板RIE干蚀刻工艺，先进的深度和电感耦合等离子体RIE工艺。用于将腔室从衬底的顶侧连接到空腔的三个实施例，例如，通过使用使用网的至少一部分形成的导向开口作为蚀刻掩模，通过使用网状物的至少一部分作为蚀刻掩模形成通气孔，或者当腔室与腔室相交时，使腔室与通气孔相交形成，说明如何修改公开的过程。通过在基板的背面形成空腔，通气孔的深度减小。此外，使用至少一部分微机加工的网格作为通气孔的蚀刻掩模使得该工艺自对准。

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