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1. 发明授权

US08851113B2 Shared gas panels in plasma processing systems 有权
标题翻译：等离子处理系统中的共用气体面板
公开(公告)号：US08851113B2
公开(公告)日：2014-10-07
申请号：US13431946
申请日：2012-03-27
申请人： Mark Taskar , Iqbal Shareef
发明人： Mark Taskar , Iqbal Shareef
IPC分类号： F16K11/20
CPC分类号： B01F3/026 , Y10T137/0318 , Y10T137/87249 , Y10T137/87281 , Y10T137/87652 , Y10T137/87885
摘要： Methods and apparatus for shared gas panel for supplying a process gas to a plurality of process modules are disclosed. The shared gas panel includes a plurality of mixing valves and at least two mixing manifolds for a given mixing valve to service at least two process modules. The mixing manifolds are disposed on a given plane and staggered to save space. Components of the shared gas panel are also stacked vertically in order to reduce volume of the shared gas panel enclosure. Components are optimized such that the two mixing manifolds coupled to the given mixing valve receive equal mass flow to eliminate matching issues.
摘要翻译：公开了用于向多个处理模块提供处理气体的共用气体面板的方法和装置。共用气体面板包括多个混合阀和用于给定混合阀的至少两个混合歧管，以用于至少两个过程模块。混合歧管布置在给定的平面上并交错以节省空间。共用气体面板的组件也垂直堆叠，以减少共用气体面板外壳的体积。优化组件使得耦合到给定混合阀的两个混合歧管获得相等的质量流量以消除匹配问题。

2. 发明授权

US08808561B2 Inert-dominant pulsing in plasma processing systems 有权
标题翻译：等离子体处理系统中的惰性主导脉冲
公开(公告)号：US08808561B2
公开(公告)日：2014-08-19
申请号：US13550547
申请日：2012-07-16
申请人： Keren Jacobs Kanarik
发明人： Keren Jacobs Kanarik
IPC分类号： C03C15/00
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/321 , H01J37/32128 , H01J37/32137 , H01J37/32146 , H01J37/32165 , H01J2237/334 , H05H1/46 , H05H2001/4682
摘要： A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.
摘要翻译：提供了一种在处理室中处理基板的方法，其具有至少一个等离子体产生源和用于向处理室提供处理气体的气体源。该方法包括用具有RF频率的RF信号激发等离子体发生源。该方法还包括使用至少第一气体脉冲频率脉冲气源，使得第一处理气体在气体脉动期间的第一部分期间流入室中，并且第二处理气体在气体脉冲期间流入室气体脉动周期的第二部分，其与第一气体脉动频率相关联。第二工艺气体相对于第一工艺气体的反应物 - 气体 - 惰性气体比具有较低的反应物 - 气体 - 惰性气体比。通过从第一工艺气体中除去至少一部分反应气体流而形成第二工艺气体。

3. 发明申请

US20220328290A1 MOVEABLE EDGE RINGS FOR SUBSTRATE PROCESSING SYSTEMS 有权
公开(公告)号：US20220328290A1
公开(公告)日：2022-10-13
申请号：US17633727
申请日：2020-08-07
申请人： LAM RESEARCH COPORATION
发明人： Rohini MISHRA , Saravanapriyan SRIRAMAN
IPC分类号： H01J37/32
摘要： A substrate support includes an outer edge ring configured to be raised and lowered relative to the substrate support via one or more lift pins. The outer edge ring is further configured to interface with a guide feature extending upward from a middle ring of the substrate support. An inner edge ring is located radially inward of the outer edge ring and is configured to be raised and lowered, independently of the outer edge ring, relative to the substrate support via one or more lift pins.

4. 发明授权

US09865815B2 Bromine containing silicon precursors for encapsulation layers 有权
公开(公告)号：US09865815B2
公开(公告)日：2018-01-09
申请号：US15272222
申请日：2016-09-21
申请人： Lam Research Corporation
发明人： Dennis M. Hausmann
IPC分类号： H01L47/00 , H01L45/00
CPC分类号： H01L45/16 , H01L45/06 , H01L45/065 , H01L45/12 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/142 , H01L45/143 , H01L45/144
摘要： Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over memory devices including chalcogenide material are provided herein. Methods include using iodine-containing and/or bromine-containing silicon precursors and depositing thermally using ammonia or hydrazine as a second reactant, or iodine-containing and/or bromine-containing silicon precursors and depositing using a nitrogen-based or hydrogen-based plasma.

5. 发明申请

US20060137821A1 Window protector for sputter etching of metal layers 审中-公开
标题翻译：用于金属层的溅射蚀刻的窗口保护器
公开(公告)号：US20060137821A1
公开(公告)日：2006-06-29
申请号：US11025490
申请日：2004-12-28
申请人： Arthur Howald , Tuqiang Ni
发明人： Arthur Howald , Tuqiang Ni
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , C23F4/00 , H01J37/32477
摘要： An inductively coupled plasma processing apparatus includes a chamber having a top opening. A window seals the top opening of the chamber, and the window has an inner surface that is exposed to an internal region of the chamber. A window protector for protecting the inner surface of the window is disposed within the chamber. The window protector is configured to prevent conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop. In one alternative embodiment, a plurality of window protectors is affixed to the inner surface of the window. In another embodiment, the window has a plurality of T-shaped or dovetail slots formed therein. In yet another embodiment, a plurality of rectangular slots is formed in the window and a window protector having corresponding slots is mounted against the inner surface of the window.
摘要翻译：电感耦合等离子体处理装置包括具有顶部开口的室。窗口密封室的顶部开口，并且窗口具有暴露于室的内部区域的内表面。用于保护窗的内表面的窗保护器设置在室内。窗保护器被配置为防止导电蚀刻副产物以连续环形式沉积在窗的内表面上。在一个替代实施例中，多个窗保护器固定在窗的内表面上。在另一个实施例中，窗口具有形成在其中的多个T形或燕尾槽。在另一个实施例中，在窗口中形成多个矩形槽，并且具有相应槽的窗保护器安装在窗的内表面上。

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