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1. 发明申请

US20180197722A1 CATHODE WITH IMPROVED RF POWER EFFICIENCY FOR SEMICONDUCTOR PROCESSING EQUIPMENT WITH RF PLASMA 审中-公开
公开(公告)号：US20180197722A1
公开(公告)日：2018-07-12
申请号：US15403039
申请日：2017-01-10
申请人： Lam Research Corporation
发明人： Maolin LONG
IPC分类号： H01J37/32 , H01L21/683 , H01L21/67
CPC分类号： H01J37/32559 , H01J37/3211 , H01J37/32137 , H01J37/32541 , H01J37/32697 , H01J37/32715 , H01J37/32834 , H01J2237/334
摘要： A cathode assembly for use in a plasma processing chamber is provided. A metal bowl that is grounded is provided. An insulator of a sealed porous or sealed honeycomb dielectric ceramic with an equivalent dielectric constant k

2. 发明授权

US09997422B2 Systems and methods for frequency modulation of radiofrequency power supply for controlling plasma instability 有权
公开(公告)号：US09997422B2
公开(公告)日：2018-06-12
申请号：US15089960
申请日：2016-04-04
申请人： Lam Research Corporation
发明人： Ishtak Karim , Yukinori Sakiyama , Yaswanth Rangineni , Edward Augustyniak , Douglas Keil , Ramesh Chandrasekharan , Adrien LaVoie , Karl Leeser
IPC分类号： H05H1/24 , H01L21/66 , H01J37/32 , H01L21/3065 , H01L21/67 , C23C16/458 , H01L21/263 , H01L21/683 , C23C16/50 , C23C16/52 , H01L21/02 , C23C16/455 , C23C16/509
CPC分类号： H01L22/20 , C23C16/45565 , C23C16/4585 , C23C16/4586 , C23C16/50 , C23C16/509 , C23C16/52 , H01J37/32082 , H01J37/32091 , H01J37/32137 , H01J37/32715 , H01J37/32935 , H01J37/3299 , H01J2237/334 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/263 , H01L21/3065 , H01L21/67069 , H01L21/67201 , H01L21/683 , H01L22/12
摘要： A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency signals of a first signal frequency are supplied to the plasma generation region to generate a plasma within the plasma generation region. Formation of a plasma instability is detected within the plasma based on supply of the radiofrequency signals of the first signal frequency. After detecting formation of the plasma instability, radiofrequency signals of a second signal frequency are supplied to the plasma generation region in lieu of the radiofrequency signals of the first signal frequency to generate the plasma. The second signal frequency is greater than the first signal frequency and is set to cause a reduction in ion energy within the plasma and a corresponding reduction in secondary electron emission from the wafer caused by ion interaction with the wafer.

3. 发明授权

US09941113B2 Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication 有权
公开(公告)号：US09941113B2
公开(公告)日：2018-04-10
申请号：US15583778
申请日：2017-05-01
申请人： Lam Research Corporation
发明人： Douglas Keil , Ishtak Karim , Yaswanth Rangineni , Adrien LaVoie , Yukinori Sakiyama , Edward Augustyniak , Karl Leeser , Chunhai Ji
IPC分类号： H01L21/00 , H01L21/02 , C23C16/50 , C23C16/455 , H01J37/32
CPC分类号： H01L21/02274 , C23C16/45525 , C23C16/50 , C23C16/505 , C23C16/5096 , H01J37/32128 , H01J37/32137 , H01J37/32165 , H01J37/32183 , H01J37/32449 , H01J37/32532 , H01J2237/3321 , H01L21/02164 , H01L21/0228
摘要： Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.

4. 发明申请

US20170372870A1 Inductive Plasma Source 审中-公开
公开(公告)号：US20170372870A1
公开(公告)日：2017-12-28
申请号：US15650164
申请日：2017-07-14
申请人： Mattson Technology, Inc.
发明人： Valery A. Godyak , Charles Crapuchettes , Vladimir Nagorny
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/32137 , H01J37/32174 , H01J37/32183 , H01J37/32449 , H01J37/32651 , H05H1/46 , H05H2001/4652
摘要： Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.

5. 发明申请

US20170178920A1 TECHNIQUE TO TUNE SIDEWALL PASSIVATION DEPOSITION CONFORMALITY FOR HIGH ASPECT RATIO CYLINDER ETCH 审中-公开
公开(公告)号：US20170178920A1
公开(公告)日：2017-06-22
申请号：US15449799
申请日：2017-03-03
申请人： Lam Research Corporation
发明人： Nikhil Dole , Eric A. Hudson , George Matamis
IPC分类号： H01L21/3065 , C23C16/52 , C23C16/455 , H01L21/67 , H01J37/32
CPC分类号： H01L21/30655 , H01J37/32091 , H01J37/32137 , H01J37/32889 , H01J37/32899 , H01J2237/3321 , H01J2237/334 , H01J2237/3347 , H01L21/02112 , H01L21/02118 , H01L21/0212 , H01L21/02164 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/31116 , H01L21/67069 , H01L28/00
摘要： Methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate are provided. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective film on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective film may be deposited under different conditions (e.g., pressure, duration of reactant delivery, duration of plasma exposure, RF power, and/or RF duty cycle, etc.) in different deposition operations. Such conditions may affect the degree of conformality at which the protective film forms. In various embodiments, one or more protective films may be sub-conformal. In these or other embodiments, one or more other protective films may be conformal.

6. 发明申请

US20170178872A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20170178872A1
公开(公告)日：2017-06-22
申请号：US15378522
申请日：2016-12-14
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroki KISHI , Jisoo SUH
IPC分类号： H01J37/32
CPC分类号： H01J37/32798 , H01J37/32091 , H01J37/32137 , H01J37/32165 , H01J37/32568 , H01J37/32697 , H01J37/32715 , H01J37/32926 , H01J2237/334 , H01J2237/3343 , H01L21/3065 , H01L22/12
摘要： A plasma processing apparatus 1 includes a chamber 10, a mounting table 16, a focus ring 24a, a first electrode plate 36 and a second electrode plate 35. The focus ring 24a is provided around the mounting table 16 to surround a mounting surface of the mounting table 16. The first electrode plate 36 is provided above the mounting table 16. The second electrode plate 35 is provided around the first electrode plate 36 to surround the first electrode plate 36 and is insulated from the first electrode plate 36. The plasma processing apparatus 1, in a first process, performs a preset processing on a semiconductor wafer W mounted on the mounting surface with plasma generated within the chamber, and, in a second process, increases an absolute value of a negative DC voltage applied to the second electrode plate 35 depending on an elapsed time of the first process.

7. 发明申请

US20170154781A1 METHOD FOR ETCHING HIGH-K DIELECTRIC USING PULSED BIAS POWER 审中-公开
公开(公告)号：US20170154781A1
公开(公告)日：2017-06-01
申请号：US15431049
申请日：2017-02-13
申请人： Tokyo Electron Limited
发明人： Alok Ranjan , Akiteru Ko
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/67 , H01L21/683 , H01L21/311 , H01L29/51
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/3211 , H01J37/32137 , H01J37/32146 , H01J37/32165 , H01J37/3222 , H01J37/3244 , H01J37/32449 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/28123 , H01L21/31116 , H01L21/31122 , H01L21/67069 , H01L21/6831 , H01L29/517 , H01L29/518
摘要： A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed on the high-k layer. The method further includes transferring a pattern formed in the gate layer to the high-k layer using a pulsed bias plasma etching process, and selecting a process condition for the pulsed bias plasma etching process to achieve a silicon recess formed in the substrate having a depth less than 2 nanometer (nm).

8. 发明授权

US09644271B1 Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication 有权
公开(公告)号：US09644271B1
公开(公告)日：2017-05-09
申请号：US15154715
申请日：2016-05-13
申请人： Lam Research Corporation
发明人： Douglas Keil , Ishtak Karim , Yaswanth Rangineni , Adrien LaVoie , Yukinori Sakiyama , Edward Augustyniak , Karl Leeser , Chunhai Ji
IPC分类号： H01L21/00 , C23C16/513 , H01L21/02
CPC分类号： H01L21/02274 , C23C16/45525 , C23C16/50 , C23C16/505 , C23C16/5096 , H01J37/32128 , H01J37/32137 , H01J37/32165 , H01J37/32183 , H01J37/32449 , H01J37/32532 , H01J2237/3321 , H01L21/02164 , H01L21/0228
摘要： Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.

9. 发明授权

US09583316B2 Inert-dominant pulsing in plasma processing systems 有权
标题翻译：等离子体处理系统中的惰性主导脉冲
公开(公告)号：US09583316B2
公开(公告)日：2017-02-28
申请号：US14965720
申请日：2015-12-10
申请人： Lam Research Corporation
发明人： Keren Jacobs Kanarik
IPC分类号： C03C25/68 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/321 , H01J37/32128 , H01J37/32137 , H01J37/32146 , H01J37/32165 , H01J2237/334 , H05H1/46 , H05H2001/4682
摘要： A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.
摘要翻译：提供了一种在处理室中处理基板的方法，其具有至少一个等离子体产生源和用于向处理室提供处理气体的气体源。该方法包括用具有RF频率的RF信号激发等离子体发生源。该方法还包括使用至少第一气体脉冲频率脉冲气源，使得第一处理气体在气体脉动期间的第一部分期间流入室中，并且第二处理气体在气体脉冲期间流入室气体脉动周期的第二部分，其与第一气体脉动频率相关联。第二工艺气体相对于第一工艺气体的反应物 - 气体 - 惰性气体比具有较低的反应物 - 气体 - 惰性气体比。通过从第一工艺气体中除去至少一部分反应气体流而形成第二工艺气体。

10. 发明申请

US20160163539A9 METHODS FOR DEPOSITING SILICON OXIDE 有权
公开(公告)号：US20160163539A9
公开(公告)日：2016-06-09
申请号：US14335785
申请日：2014-07-18
申请人： Lam Research Corporation
发明人： Hu Kang , Wanki Kim , Adrien LaVoie
IPC分类号： H01L21/02 , H01J37/32
CPC分类号： H01L21/02274 , C23C16/402 , C23C16/45542 , H01J37/32091 , H01J37/32137 , H01J37/32724 , H01J37/32917 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02219 , H01L21/0228 , H01L21/31111 , H01L21/76831 , H01L21/76898 , H01L27/11582
摘要： The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes. Conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls. The disclosed embodiments achieve more uniform film quality as evidenced by more uniform wet etch rates and electrical properties throughout the film. The disclosed embodiments may use one or more of a relatively high deposition temperature, a relatively high RF power for generating the plasma, and/or relatively long RF plasma exposure duration during each cycle of the PEALD reaction.

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