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    • 9. 发明授权
    • Transistor and its method of manufacture
    • 晶体管及其制造方法
    • US09263553B2
    • 2016-02-16
    • US13638061
    • 2011-03-29
    • Richard David Price
    • Richard David Price
    • H01L21/336H01L29/66H01L51/05H01L27/12G03F7/00
    • H01L27/1288G03F7/0002H01L27/1214H01L27/1259H01L27/1292H01L29/66757H01L51/0541
    • A transistor includes a substrate, a source terminal and a drain terminal, each terminal being supported by the substrate, and the source and drain terminal being separated by a portion of the substrate, a layer of semiconductive material deposited so as to cover the portion of the substrate and to connect the source terminal to the drain terminal, a layer of dielectric material deposited so as to cover at least a portion of the layer of semiconductive material, and a layer of electrically conductive material deposited so as to cover at least a portion of the layer of dielectric material. The layer of electrically conductive material providing a gate terminal to which a potential may be applied to control a conductivity of the layer of semiconductive material connecting the source and drain terminals.
    • 晶体管包括衬底,源极端子和漏极端子,每个端子由衬底支撑,并且源极和漏极端子由衬底的一部分分隔开,沉积的半导体材料层以覆盖部分 并且将源极端子连接到漏极端子,沉积以覆盖半导体材料层的至少一部分的介电材料层和沉积的覆盖至少一部分的导电材料层 的介电材料层。 提供栅极端子的导电材料层可以施加电位以控制连接源极和漏极端子的半导体材料层的导电性。