会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • ELECTRONIC CIRCUITS
    • 电子电路
    • US20160173099A1
    • 2016-06-16
    • US14905737
    • 2014-07-16
    • PRAGMATIC PRINTING LTD
    • Joao de OliveiraScott Darren WhiteCatherine Ramsdale
    • H03K19/0944H03K3/03H03K3/356H03K23/00H03K19/20H03K3/037
    • H03K19/0944H03K3/0315H03K3/037H03K3/356017H03K17/16H03K19/09441H03K19/20H03K23/002
    • An electronic circuit comprises: an input terminal; an output terminal; first and second supply rails; first, second, third, and fourth field effect transistors, FETs, each of a first type and each having respective gate, source and drain terminals; and first and second loads. The source of the first FET is connected to the first supply rail, the drain of the first FET and the source of the second FET are connected to the output terminal, the drain of the second FET is connected to the second supply rail, the gate of the third FET and the gate of the fourth FET are connected to the input terminal, the drain of the third FET is connected to the second supply rail, the first load is connected between the first supply rail and the source of the third FET, and the second load is connected between the drain of the fourth FET and the second supply rail. In one aspect of the invention, the gate of the first FET is connected to a node between the source of the third FET and the first load such that a voltage at the source of the third FET is applied to the gate of the first FET, and the gate of the second FET is connected to a node between the drain of the fourth FET and the second load such that a voltage at the drain of the fourth FET is applied to the gate of the second FET.
    • 电子电路包括:输入端; 输出端子; 第一和第二供电轨; 第一,第二,第三和第四场效应晶体管,每个具有第一类型和每个具有相应的栅极,源极和漏极端子的FET; 以及第一和第二载荷。 第一FET的源极连接到第一电源轨,第一FET的漏极和第二FET的源极连接到输出端子,第二FET的漏极连接到第二电源轨,栅极 第三FET的栅极和第四FET的栅极连接到输入端子,第三FET的漏极连接到第二电源轨,第一负载连接在第一电源轨和第三FET的源极之间, 并且第二负载连接在第四FET的漏极和第二电源轨之间。 在本发明的一个方面,第一FET的栅极连接到第三FET的源极和第一负载之间的节点,使得第三FET的源极处的电压被施加到第一FET的栅极, 并且第二FET的栅极连接到第四FET的漏极和第二负载之间的节点,使得第四FET的漏极处的电压被施加到第二FET的栅极。