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1. 发明授权

US11444239B1 Magnetoresistive element having an adjacent-bias layer and a toggle writing scheme 有权
公开(公告)号：US11444239B1
公开(公告)日：2022-09-13
申请号：US17187864
申请日：2021-02-28
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： G11C11/00 , H01L43/02 , H01L27/22 , G11C11/16 , H01L43/10
摘要： A magnetoresistive element using combined spin-transfer-torque controlled magnetic bias and VCMA effects comprising a free layer and an adjacent-bias layer separated by a nonmagnetic spacing layer, wherein the free layer has an interfacial perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, the adjacent-bias layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, and the perpendicular anisotropy of the free layer is sufficiently higher than that of the adjacent-bias layer such that the critical switching current to reverse the free layer magnetization direction is at least 3 times as high as the critical switching current to reverse the adjacent-bias layer magnetization direction. Further, there is provided a toggle writing method of the perpendicular magnetoresistive element comprises: applying a first write pulse having a first voltage magnitude and a first pulse width to reverse the adjacent-bias layer magnetization direction to be anti-parallel to the free layer magnetization direction by spin-transfer-torque effect, and applying a second write pulse having a second voltage magnitude and a second pulse width to reverse the free layer magnetization direction to be parallel to the adjacent-bias layer magnetization direction by voltage-controlled magnetic anisotropy effect under the magnetic dipole bias field from the adjacent-bias layer.

2. 发明申请

US20220238799A1 MAGNETORESISTIVE ELEMENT HAVING A COMPOSITE RECORDING STRUCTURE 有权
公开(公告)号：US20220238799A1
公开(公告)日：2022-07-28
申请号：US17160349
申请日：2021-01-27
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/12 , H01L43/10 , H01L43/02
摘要： A method of forming a bottom-pinned magnetoresistive element comprising a composite recording structure that includes a first magnetic free layer and a second magnetic free layer containing Ni atoms, separated by an oxide spacing layer. The first magnetic free layer is Ni-free and the first magnetic free layer and the second magnetic free layer are magnetically parallel-coupled. A magnetic STT-enhancing structure is further provided atop the cap layer, wherein the magnetic STT-enhancing structure comprises a first magnetic material layer atop the cap layer and having a perpendicular magnetic anisotropy and an invariable magnetization anti-parallel to the magnetization direction of the reference layer, a second anti-ferromagnetic coupling (AFC) layer atop the first magnetic material layer, and a second magnetic material layer atop the second AFC layer.

3. 发明授权

US11316102B2 Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning 有权
公开(公告)号：US11316102B2
公开(公告)日：2022-04-26
申请号：US16865810
申请日：2020-05-04
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/10 , H01L43/08 , H01F10/12 , H01F10/32 , H01F10/30
摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

4. 发明授权

US11569440B2 Making a memoristic array with an implanted hard mask 有权
公开(公告)号：US11569440B2
公开(公告)日：2023-01-31
申请号：US15412076
申请日：2017-01-23
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/12 , H01L27/24 , H01L45/00 , H01L27/22
摘要： The invention disclosed a method to make an implanted hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory. Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining element (HMSE) is added below PTM. Due to a better materials adhesion between HMSE and the hard mask, a stronger hard mask array can be formed.

5. 发明申请

US20220246836A1 COMPOSITE RECORDING STRUCTURE FOR AN IMPROVED WRITE PROFERMANCE 有权
公开(公告)号：US20220246836A1
公开(公告)日：2022-08-04
申请号：US17165105
申请日：2021-02-02
申请人： YIMIN GUO , RONGFU XIAO , JUN CHEN
发明人： YIMIN GUO , RONGFU XIAO , JUN CHEN
IPC分类号： H01L43/02 , H01L27/22 , H01L43/10
摘要： A composite recording structure comprising a first magnetic free layer comprising an amorphous magnetic material sub-layer, a Boron-absorbing material sub-layer atop the amorphous magnetic material sub-layer and a Co/Ni superlattice sub-layer atop the Boron-absorbing material sub-layer; one or many repeats of a substructure including a nonmagnetic spacing layer and a Co/Ni superlattice free layer, atop the first magnetic free layer, wherein said first magnetic free layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, said each Co/Ni superlattice free layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface.

6. 发明申请

US20210343934A1 COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING 有权
公开(公告)号：US20210343934A1
公开(公告)日：2021-11-04
申请号：US16865810
申请日：2020-05-04
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/10 , H01L43/08 , H01F10/30 , H01F10/32 , H01F10/12
摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

7. 发明申请

US20210327960A1 BOTTOM-PINNED MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT STRUCTURE 有权
公开(公告)号：US20210327960A1
公开(公告)日：2021-10-21
申请号：US16849571
申请日：2020-04-15
申请人： RONGFU XIAO , Yimin Guo , Jun Chen
发明人： RONGFU XIAO , Yimin Guo , Jun Chen
IPC分类号： H01L27/22 , H01L43/08 , H01L43/12 , H01L43/02 , G11C11/16
摘要： An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such bCSOT-MTJ element will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU.

8. 发明授权

US11081154B1 Synthetic magnetic pinning element having strong antiferromagnetic coupling 有权
公开(公告)号：US11081154B1
公开(公告)日：2021-08-03
申请号：US16773283
申请日：2020-01-27
申请人： Rongfu Xiao , Yimin Guo , Jun Chen
发明人： Rongfu Xiao , Yimin Guo , Jun Chen
IPC分类号： G11C11/16 , H01L27/22 , H01L43/10 , H01L43/08 , H01L43/02
摘要： The present invention discloses an enhanced synthetic antiferromagnetic (eSAF) element with a very strong RKKY coupling comprising a magnetic pinning layer having a face-center-cubic (fcc) crystalline structure and a magnetic reference layer having a body-center-cubic (bcc) crystalline structure which are antiferromagnetically coupled by a composite non-magnetic spacer (CnmS) containing a bi-layer of (Ru, Rh or Ir)/Cr or tri-layer of (Ru, Rh, or Ir)/(W, Mo, or V)/Cr. With such eSAF, a strong magnetic pinning element is formed which can be used to make various thin STT-MRAM film stacks with good thermal and magnetic stability while maintaining high TMR value.

9. 发明申请

US20210233576A1 SYNTHETIC MAGNEETIC PINNING ELEMENT HAVING STRONG ANTIFERROMAGNETIC COUPLING 有权
公开(公告)号：US20210233576A1
公开(公告)日：2021-07-29
申请号：US16773283
申请日：2020-01-27
申请人： RONGFU XIAO , YIMIN GUO , JUN CHEN
发明人： RONGFU XIAO , YIMIN GUO , JUN CHEN
IPC分类号： G11C11/16 , H01L27/22 , H01L43/02 , H01L43/08 , H01L43/10
摘要： The present invention discloses an enhanced synthetic antiferromagnetic (eSAF) element with a very strong RKKY coupling comprising a magnetic pinning layer having a face-center-cubic (fcc) crystalline structure and a magnetic reference layer having a body-center-cubic (bcc) crystalline structure which are antiferromagnetically coupled by a composite non-magnetic spacer (CnmS) containing a bi-layer of (Ru, Rh or Ir)/Cr or tri-layer of (Ru, Rh, or Ir)/(W, Mo, or V)/Cr. With such eSAF, a strong magnetic pinning element is formed which can be used to make various thin STT-MRAM film stacks with good thermal and magnetic stability while maintaining high TMR value.

10. 发明申请

US20230067295A1 MAGNETORESISTIVE ELEMENT HAVING A NANO-CURRENT-CHANNEL STURCTURE 有权
公开(公告)号：US20230067295A1
公开(公告)日：2023-03-02
申请号：US17460189
申请日：2021-08-28
申请人： YIMIN GUO , RONGFU XIAO , JUN CHEN
发明人： YIMIN GUO , RONGFU XIAO , JUN CHEN
IPC分类号： H01L43/02 , H01L43/12 , H01F10/32 , H01F41/32 , G11C11/16
摘要： A magnetoresistive element comprises a nonmagnetic nano-current-channel (NCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising a spatial distribution of perpendicular conducting channels throughout the NCC structure thickness and surrounded by an insulating medium, making the magnetic recording layer a magnetically soft-hard composite structure. Correspondingly, the critical write current and write power are reduced with reversal modes of exchange-spring magnets of the magnetically soft-hard composite structure.

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