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1. 发明申请

US20230039108A1 PERPENDICULAR MTJ ELEMENT HAVING A SOFT-MAGNETIC ADJACENT LAYER AND METHODS OF MAKING THE SAME 有权
公开(公告)号：US20230039108A1
公开(公告)日：2023-02-09
申请号：US17392672
申请日：2021-08-03
申请人： Yimin GUO , Rongfu XIAO , Jun CHEN
发明人： Yimin GUO , Rongfu XIAO , Jun CHEN
IPC分类号： H01L43/02 , H01L27/22 , H01L43/10 , H01L43/12
摘要： The invention comprises a method of forming a magnetic free layer having a (100) texture and a novel magnetic pinning structure having a (100) textured or cube-textured reference layer through a non-epitaxial texturing approach so that an excellent coherent tunneling effect is achieved in a pMTJ element due to its texture structure of Fe or CoFe BCC (100)/MgO rocksalt (100)/Fe or CoFe BCC (100). The invention also discloses a pMTJ element comprising a soft-magnetic adjacent layer having at least one high-permeability material layer having a near-zero magnetostriction. Correspondingly, a high MR ratio and a coherent domain reversal of the magnetic free layer can be achieved for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

2. 发明授权

US11450467B2 Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same 有权
公开(公告)号：US11450467B2
公开(公告)日：2022-09-20
申请号：US17105381
申请日：2020-11-25
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/10 , H01F10/32 , H01L43/12 , H01F41/30
摘要： A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.

3. 发明授权

US11450466B2 Composite seed structure to improve PMA for perpendicular magnetic pinning 有权
公开(公告)号：US11450466B2
公开(公告)日：2022-09-20
申请号：US16997879
申请日：2020-08-19
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/02 , H01F10/32 , H01L43/12 , H01F41/32 , H01L43/10
摘要： The invention comprises a novel composite seed structure (CSS) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

4. 发明申请

US20220165470A1 MAGNETORESISTIVE ELEMENT HAVING A GIANT INTERFACIAL PERPENDICULAR MAGNETIC ANISOTROPY AND METHOD OF MAKING THE SAME 有权
公开(公告)号：US20220165470A1
公开(公告)日：2022-05-26
申请号：US17105381
申请日：2020-11-25
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01F10/32 , H01L43/10 , H01L43/12 , H01F41/30
摘要： A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.

5. 发明申请

US20220059270A1 COMPOSITE SEED STRUCTURE TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING 有权
公开(公告)号：US20220059270A1
公开(公告)日：2022-02-24
申请号：US16997879
申请日：2020-08-19
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01F10/32 , H01L43/02 , H01L43/12 , H01F41/32
摘要： The invention comprises a novel composite seed structure (CSS) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

6. 发明授权

US11251367B2 Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning 有权
公开(公告)号：US11251367B2
公开(公告)日：2022-02-15
申请号：US16806193
申请日：2020-03-02
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/02 , H01L43/10 , H01L27/22 , H01L43/12 , H01L43/08
摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

7. 发明授权

US08711528B1 Tunnel magnetoresistance read head with narrow shield-to-shield spacing 有权
标题翻译：隧道磁阻读头，屏蔽间隔窄
公开(公告)号：US08711528B1
公开(公告)日：2014-04-29
申请号：US13538650
申请日：2012-06-29
申请人： Rongfu Xiao , Guanxiong Li , Zhihong Zhang , Ming Mao , Chen-Jung Chien
发明人： Rongfu Xiao , Guanxiong Li , Zhihong Zhang , Ming Mao , Chen-Jung Chien
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , G01R33/098 , G11B5/3163 , G11B5/3912 , G11B5/398 , H01L43/12 , Y10T29/49052
摘要： A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.
摘要翻译：提供具有带标签的AFM层和扩展的钉扎层的隧道磁阻（TMR）读取传感器及其制造方法。 TMR读取传感器具有从空气轴承表面凹入的AFM层，从而减少屏蔽与屏蔽距离。

8. 发明授权

US07936027B2 Method of MRAM fabrication with zero electrical shorting 有权
标题翻译：零电气短路的MRAM制造方法
公开(公告)号：US07936027B2
公开(公告)日：2011-05-03
申请号：US12006889
申请日：2008-01-07
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhong , Witold Kula
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhong , Witold Kula
IPC分类号： G11C11/02
CPC分类号： H01L43/12 , H01L43/08
摘要： An MTJ cell without footings and free from electrical short-circuits across a tunneling barrier layer is formed by using a Ta hard mask layer and a combination of etches. A first etch patterns the Ta hard mask, while a second etch uses O2 applied in a single high power process at two successive different power levels. A first power level of between approximately 200 W and 500 W removes BARC, photoresist and Ta residue from the first etch, the second power level, between approximately 400 W and 600 W continues an etch of the stack layers and forms a protective oxide around the etched sides of the stack. Finally, an etch using a carbon, hydrogen and oxygen gas completes the etch while the oxide layer protects the cell from short-circuits across the lateral edges of the barrier layer.
摘要翻译：通过使用Ta硬掩模层和蚀刻的组合，形成没有底脚并且穿过隧道势垒层的电短路的MTJ电池。第一蚀刻图案Ta硬掩模，而第二蚀刻使用在两个连续的不同功率水平下在单个高功率过程中施加的O2。在大约200W至500W之间的第一功率电平从第一蚀刻去除BARC，光致抗蚀剂和Ta残留物，第二功率电平在大约400W至600W之间，继续蚀刻叠层，并在其周围形成保护氧化物蚀刻边的堆叠。最后，使用碳，氢和氧气的蚀刻完成了蚀刻，而氧化物层保护电池免受横跨阻挡层的侧边缘的短路。

9. 发明授权

US06466418B1 Bottom spin valves with continuous spacer exchange (or hard) bias 失效
标题翻译：底部旋转阀具有连续的间隔物交换（或硬）偏置
公开(公告)号：US06466418B1
公开(公告)日：2002-10-15
申请号：US09502035
申请日：2000-02-11
申请人： Cheng T. Horng , Min Li , Simon H. Liao , Ru-Ying Tong , Chyu Jiuh Torng , Rongfu Xiao
发明人： Cheng T. Horng , Min Li , Simon H. Liao , Ru-Ying Tong , Chyu Jiuh Torng , Rongfu Xiao
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044
摘要： A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias and a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element fabricated according to that method. To practice the method, there is provided a substrate upon which is formed a seed layer, upon which is formed an antiferromagnetic pinning layer, upon which is formed a ferromagnetic pinned layer, upon which is formed a non-magnetic spacer layer, upon which is formed a ferromagnetic free layer, upon which is formed a specularly reflecting and capping layer. The width of the sensor element is defined by a pair of conducting leads aligned upon a pair of continuous spacer exchange hard bias layers.
摘要翻译：用于形成具有连续间隔物交换硬偏置的镜面反射底部自旋阀磁阻（SVMR）传感器元件的方法和根据该方法制造的镜面反射底部自旋阀磁阻（SVMR）传感器元件。为了实现该方法，提供了一个衬底，在其上形成一种晶种层，在其上形成反铁磁钉扎层，在其上形成铁磁性钉扎层，在其上形成非磁性间隔层，形成铁磁自由层，在其上形成镜面反射和覆盖层。传感器元件的宽度由在一对连续间隔物交换硬偏压层上对准的一对导电引线限定。

10. 发明申请

US20230067295A1 MAGNETORESISTIVE ELEMENT HAVING A NANO-CURRENT-CHANNEL STURCTURE 有权
公开(公告)号：US20230067295A1
公开(公告)日：2023-03-02
申请号：US17460189
申请日：2021-08-28
申请人： YIMIN GUO , RONGFU XIAO , JUN CHEN
发明人： YIMIN GUO , RONGFU XIAO , JUN CHEN
IPC分类号： H01L43/02 , H01L43/12 , H01F10/32 , H01F41/32 , G11C11/16
摘要： A magnetoresistive element comprises a nonmagnetic nano-current-channel (NCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising a spatial distribution of perpendicular conducting channels throughout the NCC structure thickness and surrounded by an insulating medium, making the magnetic recording layer a magnetically soft-hard composite structure. Correspondingly, the critical write current and write power are reduced with reversal modes of exchange-spring magnets of the magnetically soft-hard composite structure.

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