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1. 发明申请

US20200321243A1 METHOD FOR FABRICATING A STRAINED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE 审中-公开
公开(公告)号：US20200321243A1
公开(公告)日：2020-10-08
申请号：US16301276
申请日：2017-05-17
申请人： SOITEC
发明人： Walter Schwarzenbach , Guillaume Chabanne , Nicolas Daval
IPC分类号： H01L21/762
摘要： A method for fabricating a strained semiconductor-on-insulator substrate comprises bonding a donor substrate to a receiving substrate with a dielectric layer at the interface. The donor substrate comprises a monocrystalline carrier substrate, an intermediate etch-stop layer, and a monocrystalline semiconductor layer. The monocrystalline semiconductor layer is transferred from the donor substrate to the receiving substrate. Trench isolations are formed to cut a portion from a layer stack including the transferred monocrystalline semiconductor layer, the dielectric layer, and the strained semiconductor material layer. The cutting operation results in relaxation of strain in the strained semiconductor material, and in application of strain to the transferred monocrystalline semiconductor layer. After transferring the monocrystalline semiconductor layer and before the cutting operation, a portion of the carrier substrate is selectively etched with respect to the intermediate layer, and the intermediate layer is selectively etched with respect to the monocrystalline semiconductor layer.

2. 发明申请

US20190221471A1 METHOD FOR TRANSFERRING A USEFUL LAYER 审中-公开
公开(公告)号：US20190221471A1
公开(公告)日：2019-07-18
申请号：US16324461
申请日：2017-08-01
申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives , Boitec
发明人： Didier Landru , Nadia Ben Mohamed , Oleg Kononchuk , Frederic Mazen , Damien Massy , Shay Reboh , Francois Rieutord
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A useful layer is layered onto a support by a method that includes the steps of forming an embrittlement plane by implanting light elements into a first substrate, so as to form a useful layer between such plane and one surface of the first substrate; applying the support onto the surface of the first substrate so as to form an assembly to be fractured; applying a heat treatment for embrittling the assembly to be fractured; and initiating and propagating a fracture wave into the first substrate along the embrittlement plane. The fracture wave is initiated in a central area of the embrittlement plane and the propagation speed of the wave is controlled so that the velocity thereof is sufficient to cause the interactions of the fracture wave with acoustic vibrations emitted upon the initiation and/or propagation thereof, if any, are confined to a peripheral area of the useful layer.

3. 发明申请

US20190058031A1 CARRIER FOR A SEMICONDUCTOR STRUCTURE 审中-公开
公开(公告)号：US20190058031A1
公开(公告)日：2019-02-21
申请号：US16080279
申请日：2017-02-23
申请人： Centre National de la Recherche Scientifque , Universite Claude Bernard Lyon 1 , Soitec
发明人： Christophe Figuet , Oleg Kononchuk , Kassam Alassaad , Gabriel Ferro , Véronique Souliere , Christelle Veytizou , Taguhi Yeghoyan
IPC分类号： H01L29/06 , H01L21/762 , H01L29/16 , H01L21/02
摘要： A support for a semiconductor structure includes a charge-trapping layer on a base substrate. The charge-trapping layer consists of a polycrystalline main layer and, interposed in the main layer or between the main layer and the base substrate, at least one intermediate polycrystalline layer composed of a silicon and carbon alloy or carbon. The intermediate layer has a resistivity greater than 1000 ohm·cm.

4. 发明授权

US08253170B2 Electronic devices with improved OHMIC contact 有权
标题翻译：具有改善OHMIC接触的电子设备
公开(公告)号：US08253170B2
公开(公告)日：2012-08-28
申请号：US13108944
申请日：2011-05-16
申请人： Hacène Lahreche
发明人： Hacène Lahreche
IPC分类号： H01L31/0328 , H01L29/80 , H01L31/112 , H01L29/778
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/41725 , H01L29/66462 , H01L29/778
摘要： In one embodiment, the disclosure relates to an electronic device successively comprising from its base to its surface: (a) a support layer, (b) a channel layer adapted to contain an electron gas, (c) a barrier layer and (d) at least one ohmic contact electrode formed by a superposition of metallic layers, a first layer of which is in contact with the barrier layer. The device is remarkable in that the barrier layer includes a contact region under the ohmic contact electrode(s). The contact region includes at least one metal selected from the metals forming the superposition of metallic layers. Furthermore, a local alloying binds the contact region and the first layer of the electrode(s).
摘要翻译：在一个实施例中，本发明涉及从其基底到其表面连续地包括的电子设备：（a）支撑层，（b）适于容纳电子气的沟道层，（c）阻挡层和（d）至少一个欧姆接触电极，通过叠加金属层形成，其第一层与阻挡层接触。该器件是显着的，因为阻挡层包括在欧姆接触电极下的接触区域。接触区域包括选自形成金属层叠加的金属中的至少一种金属。此外，局部合金化结合电极的接触区域和第一层。

5. 发明申请

US20190088462A1 METHOD FOR MANUFACTURING A SUBSTRATE 审中-公开
公开(公告)号：US20190088462A1
公开(公告)日：2019-03-21
申请号：US15743004
申请日：2016-07-13
申请人： Soitec
发明人： Pascal Guenard , Marcel Broekaart , Thierry Barge
IPC分类号： H01L21/02 , H01L41/083 , H01L41/312 , H01L41/187
摘要： A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

6. 发明授权

US11600766B2 Method for manufacturing a monocrystalline piezoelectric layer 有权
公开(公告)号：US11600766B2
公开(公告)日：2023-03-07
申请号：US16064420
申请日：2016-12-21
申请人： Soitec
发明人： Bruno Ghyselen , Ionut Radu , Jean-Marc Bethoux
IPC分类号： H01L41/312 , H01L41/319 , H03H3/02 , H01L41/187 , C30B25/18 , C30B29/22 , H01L41/08 , H01L41/09 , H01L41/335 , H03H3/08 , H03H9/25 , H03H9/54 , H03H9/64 , H01L41/316 , C30B29/30
摘要： A method for manufacturing a monocrystalline piezoelectric material layer includes providing a donor substrate made of the piezoelectric material, providing a receiving substrate, transferring a so-called “seed layer” of the donor substrate onto the receiving substrate, and using epitaxy of the piezoelectric material on the seed layer until the desired thickness for the monocrystalline piezoelectric layer is obtained.

7. 发明授权

US11595021B2 Saw resonator comprising layers for attenuating parasitic waves 有权
公开(公告)号：US11595021B2
公开(公告)日：2023-02-28
申请号：US16493560
申请日：2018-03-09
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , SOITEC
发明人： Thu Trang Vo , Jean-Sebastien Moulet , Alexandre Reinhardt , Isabelle Huyet , Alexis Drouin , Yann Sinquin
IPC分类号： H03H9/02 , H03H3/08 , H03H9/145 , H03H9/25
摘要： The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

8. 发明申请

US20230011691A1 METHOD FOR ETCHING SUBSTRATES COMPRISING A THIN SURFACE LAYER, FOR IMPROVING THE UNIFORMITY OF THICKNESS OF SAID LAYER 有权
公开(公告)号：US20230011691A1
公开(公告)日：2023-01-12
申请号：US17757408
申请日：2020-11-27
申请人： Soitec
发明人： Laurent Viravaux , Sébastien Carton , Onintza Ros
IPC分类号： H01L21/306 , H01L21/02
摘要： A method for etching a main surface of a thin layer of a substrate, which comprises immersing the substrate n an etching bath so as to expose the main surface to an etching agent, the substrate being oriented relative to the bath such that: —when it is introduced into the bath, the main surface is gradually immersed from an initial introduction point (PII) to an end introduction point (PFI), at an introduction speed, and —when it exits the bath, the main surface gradually emerges from an initial exit point (PIS) to an end exit point (PFS), at an exit speed, the method being characterized in that: —the introduction speed is chosen in such a way as to etch the main surface according to a first non-uniform profile between the initial introduction point (PII) and the end introduction point (PFI), and/or —the exit speed is chosen in such a way as to etch the main surface according to a second non-uniform profile between the initial exit point (PIS) and the end exit point (PFS), in order to compensate for non-uniformities in the thickness of the thin layer.

9. 发明授权

US11552123B2 Front-side type image sensors 有权
公开(公告)号：US11552123B2
公开(公告)日：2023-01-10
申请号：US17133316
申请日：2020-12-23
申请人： Soitec
发明人： Walter Schwarzenbach
IPC分类号： H01L27/146 , H01L21/762
摘要： A front-side type image sensor may include a substrate successively including: a P− type doped semiconducting support substrate, an electrically insulating layer and a semiconducting active layer, and a matrix array of photodiodes in the active layer of the substrate. The substrate may include, between the support substrate and the electrically insulating layer, a P+ type doped semiconducting epitaxial layer.

10. 发明授权

US11542155B2 Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate 有权
公开(公告)号：US11542155B2
公开(公告)日：2023-01-03
申请号：US16770013
申请日：2018-11-21
申请人： Soitec
发明人： Charlotte Drazek , Djamel Belhachemi
IPC分类号： H01L21/762 , H01L21/02 , B81C1/00
摘要： A method is used to prepare the remainder of a donor substrate, from which a layer has been removed by delamination in a plane weakened by ion implantation. The remainder comprises, on a main face, an annular step corresponding to a non-removed part of the donor substrate. The method comprises the deposition of a smoothing oxide on the main face of the remainder in order to fill the inner space defined by the annular step and to cover at least part of the annular step, as well as heat treatment for densification of the smoothing oxide. A substrate is produced by the method, and the substrate may be used in subsequent processes.

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