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1. 发明申请

US20230113584A1 METHOD FOR FORMING A PIEZOELECTRIC FILM 有权
公开(公告)号：US20230113584A1
公开(公告)日：2023-04-13
申请号：US17938118
申请日：2022-10-05
申请人： SKYWORKS GLOBAL PTE. LTD.
发明人： Kezia Cheng , Kwang Jae Shin , Alexandre Augusto Shirakawa , Stefan Bader
IPC分类号： H01L41/319 , H01L41/08 , H01L41/187 , H01L41/316 , H03H9/02 , H03H9/17 , H03H9/56 , H03H9/25 , H03H9/64
摘要： A piezoelectric film on a substrate is provided comprising an aluminum nitride (AlN) layer, and a Al1-x(J)xN compound layer comprising a graded section with a lower (J) composition, x, adjacent to the AlN layer and a higher (J) composition, x, located away from the AlN layer, the said (J) being a singular element or a binary compound. A method for forming such a piezoelectric film is also provided. A surface acoustic wave resonator comprising such a piezoelectric film, a surface acoustic wave filter comprising such a piezoelectric film, a bulk acoustic wave resonator comprising such a piezoelectric film, and a bulk acoustic wave filter comprising such a piezoelectric film are also provided.

2. 发明授权

US11435242B2 Increasing sensitivity of a sensor using an encoded signal 有权
公开(公告)号：US11435242B2
公开(公告)日：2022-09-06
申请号：US17226902
申请日：2021-04-09
申请人： Sentons Inc.
发明人： Samuel W. Sheng , Shih-Ming Shih , Yenyu Hsieh , Shirish A. Altekar
IPC分类号： G01L1/18 , G06F3/045 , G06F3/043 , G06F3/041 , G01L9/06 , G01L5/00 , G01P15/12 , G01L9/08 , H03K17/96 , H01L41/319 , G06F1/16
摘要： A physical disturbance sensor includes a plurality of piezoresistive elements configured in a resistive bridge configuration. A signal transmitter is electrically connected to the physical disturbance sensor and configured to send an encoded signal to the piezoresistive elements of the resistive bridge configuration. A signal receiver is electrically connected to the piezoresistive elements and configured to receive a signal from the physical disturbance sensor. The received signal from the physical disturbance sensor is correlated with the sent encoded signal in determining a measure of physical disturbance.

3. 发明申请

US20220263009A1 PIEZOELECTRIC COATING AND DEPOSITION PROCESS 有权
公开(公告)号：US20220263009A1
公开(公告)日：2022-08-18
申请号：US17628255
申请日：2020-07-15
申请人： EVATEC AG
发明人： Andrea Mazzalai , Volker Röbisch , Bernd Heinz
IPC分类号： H01L41/316 , H01L41/08 , H01L41/187 , H01L41/319 , C01B21/06 , C23C14/34 , C23C14/00 , C23C14/06 , C23C14/02
摘要： A substrate having a surface coated with a piezoelectric coating I, the coating including A-xMexN, wherein A is at least one of B, Al, Ga, In, Tl, and Me is at least one metallic element Me from the transition metal groups 3b, 4b, 5b 6b the lanthanides, and Mg the coating I having a thickness d, and further including a transition layer wherein the ratio of atomic percentage of Me to atomic percentage of Al steadily rises along a thickness extent δ3 of said coating for which there is valid: δ3≤d.

4. 发明授权

US11411168B2 Methods of forming group III piezoelectric thin films via sputtering 有权
公开(公告)号：US11411168B2
公开(公告)日：2022-08-09
申请号：US16513143
申请日：2019-07-16
申请人： Akoustis, Inc.
发明人： Craig Moe , Jeffrey B. Shealy , Mary Winters
IPC分类号： H01L41/316 , H03H3/02 , H01L41/187 , H01L41/053 , H01J37/34 , C23C14/34 , C23C14/06 , C23C14/02 , H03H9/56 , H01L41/319
摘要： A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).

5. 发明申请

US20220173302A1 PIEZOELECTRIC ELEMENT 有权
公开(公告)号：US20220173302A1
公开(公告)日：2022-06-02
申请号：US17672283
申请日：2022-02-15
申请人： ROHM CO., LTD.
发明人： Koji NOMURA , Nobufumi MATSUO , Tomohiro DATE
IPC分类号： H01L41/08 , H01L41/047 , H01L41/187 , H01L41/319
摘要： A piezoelectric element 10 includes a lower electrode, constituted of a Pt/Ti laminated film, a PLT seed layer, formed on the lower electrode, a PZT piezoelectric film, formed on the PLT seed layer, and an upper electrode, formed on the PZT piezoelectric film. A curve Q1 is a curve drawn such as to pass through a plurality of plotted points, each expressing a PLT (100) peak intensity with respect to a Pt (111) peak intensity according to a substrate setting temperature during forming of the Pt/Ti laminated film. A relationship of the PLT (100) peak intensity with respect to the Pt (111) peak intensity is within a range in the curve Q1 until the PLT (100) peak intensity decreases by 5% from a peak point P, at which the PLT (100) peak intensity is the maximum, and a (100) orientation rate of PLT constituting the seed layer is not less than 85%.

6. 发明申请

US20220093844A1 PIEZOELECTRIC ELEMENT 有权
公开(公告)号：US20220093844A1
公开(公告)日：2022-03-24
申请号：US17539422
申请日：2021-12-01
申请人： FUJIFILM Corporation
发明人： Kenichi UMEDA , Yukihiro OKUNO , Takami ARAKAWA
IPC分类号： H01L41/08 , H01L41/319
摘要： A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1−dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1αa2)(Zrb1Tib2βb3)Oc, where 0.5

7. 发明申请

US20210376222A1 PIEZOLUMINESCENCE STRUCTURE, PIEZOELECTRIC STRUCTURE, MANUFACTURING METHOD THEREOF AND HIGH SENSITIVITY PRESSURE SENSOR USING THE SAME 有权
公开(公告)号：US20210376222A1
公开(公告)日：2021-12-02
申请号：US17337301
申请日：2021-06-02
申请人： INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
发明人： Hyung Ho PARK , Kyung Mun KANG , Yue WANG , Min Jae KIM , Chabungbam Akendra SINGH , Chan LEE
IPC分类号： H01L41/187 , H01L41/27 , C23C16/455 , H01L41/319 , H01L41/316 , C09K11/55 , H01L41/113
摘要： Provided are a piezoluminescence structure, a piezoelectric structure, a manufacturing method thereof, and a high-sensitivity pressure sensor using the same. The piezoelectric structure includes: a plurality of perovskite material layers each including a material having an AnBnO3n perovskite structure; and interlayers inserted between the plurality of perovskite material layers and including A*O which is a metal oxide having reaction resistance to CO2. Here, A and A* are different elements and are one of an alkaline earth metal element, an alkali metal element, a lanthanide element, and a post-transition metal element, B is a transition metal element, O is an oxygen element, and n is a positive (+) integer. The piezoelectric structure may be a piezoluminescence structure.

8. 发明授权

US11101428B2 Method for the production of a single-crystal film, in particular piezoeletric 有权
公开(公告)号：US11101428B2
公开(公告)日：2021-08-24
申请号：US16064416
申请日：2016-12-21
申请人： Soitec
发明人： Bruno Ghyselen , Jean-Marc Bethoux
IPC分类号： H01L41/39 , H01L41/319 , H01L41/187 , C30B29/22 , C30B25/18 , H01L41/312 , H01L21/762 , C30B29/30 , H03H9/02 , H03H9/54 , H03H9/64 , H01L41/316
摘要： A method of manufacturing a monocrystalline layer, comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O3 on piezoelectric material ABO3 of the seed layer where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.

9. 发明授权

US11020973B2 Piezoelectric device, liquid ejecting head, liquid ejecting apparatus, and manufacturing method of piezoelectric device 有权
公开(公告)号：US11020973B2
公开(公告)日：2021-06-01
申请号：US15759153
申请日：2016-08-31
申请人： SEIKO EPSON CORPORATION
发明人： Masao Nakayama , Yasuhiro Itayama , Naoto Yokoyama , Eiju Hirai , Motoki Takabe
IPC分类号： H01L41/187 , H01L41/319 , B41J2/16 , H01L41/08 , H01L41/09
摘要： Provided is a piezoelectric device including: a substrate (10) on which a plurality of recesses (12) are provided; a vibrating plate (50) which is provided on one surface side of the substrate; and a piezoelectric element (300) which is provided over the vibrating plate (50) and on which a first electrode (60), a piezoelectric layer (70), and a second electrode (80) are laminated from the substrate (10) side, in which the first electrode (60) is formed to have a first width which is smaller than a dimension of the recess in a parallel arrangement direction in the parallel arrangement direction of at least one recess (12), and the piezoelectric layer (70) is extended to the outer side of the first electrode (60) in the parallel arrangement direction and has a second width which is greater than the first width and smaller than a width of the recess (12) in the parallel arrangement direction, the vibrating plate (50) contains a zirconium oxide layer (52), and when an area of the zirconium oxide layer (52) corresponding to the first electrode having the first width is set as a first area (p), areas of the zirconium oxide layer (52) corresponding to areas where the piezoelectric layer (70) is provided on the outer side of the first area (p) in the parallel arrangement direction are set as second areas (q), and areas of the zirconium oxide layer (52) corresponding to the recess (12) on the outer side of the second areas (q) in the parallel arrangement direction are set as third areas (r), the zirconium oxide layer (52) contains particulate crystal in the first area (p) at least on the first electrode (60) side in the thickness direction and contains columnar crystal in the third areas (r).

10. 发明申请

US20210074906A1 METHOD FOR MANUFACTURING A CRYSTALLINE LAYER OF PZT MATERIAL, AND SUBSTRATE FOR EPITAXIAL GROWING A CYRSTALLINE LAYER OF PZT MATERIAL 有权
公开(公告)号：US20210074906A1
公开(公告)日：2021-03-11
申请号：US17042657
申请日：2019-03-26
申请人： Soitec
发明人： Bruno Ghyselen
IPC分类号： H01L41/319 , C30B25/18 , C30B29/22 , C30B33/06 , H01L41/08 , H01L41/187
摘要： A process for producing a crystalline layer of PZT material, comprising the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material, followed by epitaxial growth of the crystalline layer of PZT material.

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