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    • 9. 发明授权
    • Semiconductor epitaxial structure and light-emitting device thereof
    • 半导体外延结构及其发光器件
    • US09385269B2
    • 2016-07-05
    • US14130624
    • 2012-12-26
    • South China Normal University
    • Ting MeiNaiyin WangHao LiLei Wan
    • H01L33/06H01L33/14H01S5/343H01S5/042
    • H01L33/06H01L33/14H01L33/145H01S5/0421H01S5/2009H01S5/3054H01S5/34333H01S5/34346H01S2301/17
    • The present invention discloses an epitaxial structure for semiconductor light-emitting device, comprising an electron injection region, a hole injection region, a multi-quantum well active region, a potential barrier layer for blocking carriers, and one or more band edge shaping layers. The doping type and/or doping concentration of said band edge shaping layers are different from those of the adjacent layers. It may trim the band edge shape of the semiconductor energy band through the local built-in electric field formed as a result of adjusting the doping type, doping concentration and/or layer thickness thereof, such that the carriers in the multi-quantum well active region are distributed uniformly, the overall Auger recombination is decreased, and the effective potential barrier height of the potential barrier layer for blocking carriers is increased to reduce the drain current formed by carriers overflowing out of the multi-quantum well active region, thereby improving internal quantum efficiency. The present invention further discloses a semiconductor light-emitting device that employs said epitaxial structure, which similarly achieves the effects of reduced Auger recombination and/or decreased drain current through the trimming of the band edge shape of the energy band structure by the local built-in electric field, thereby improving internal quantum efficiency of the device.
    • 本发明公开了一种半导体发光器件的外延结构,包括电子注入区,空穴注入区,多量子阱有源区,用于阻挡载流子的势垒层和一个或多个带边成形层。 所述带边缘成形层的掺杂类型和/或掺杂浓度与相邻层的掺杂类型和/或掺杂浓度不同。 其可以通过调整掺杂类型,掺杂浓度和/或层厚度而形成的局部内置电场来修整半导体能带的带边缘形状,使得多量子阱活性中的载流子 区域均匀分布,整个俄歇复合减小,阻挡载流子的势垒层的有效势垒高度增加,以减少由多量子阱有源区溢出的载流子形成的漏极电流,从而改善内部 量子效率。 本发明还公开了一种采用所述外延结构的半导体发光器件,其类似地实现了通过本地内建芯片修剪能带结构的带边缘形状来减小俄歇复合和/或降低漏极电流的效果, 在电场中,从而提高器件的内部量子效率。