专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10453984B2 Conductive isolation between phototransistors 有权
公开(公告)号：US10453984B2
公开(公告)日：2019-10-22
申请号：US15467478
申请日：2017-03-23
申请人： WAVEFRONT HOLDINGS, LLC
发明人： Jie Yao
IPC分类号： H01L21/00 , H01L31/11 , H01L27/146
摘要： Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.

2. 发明授权

US08354324B2 Mesa heterojunction phototransistor and method for making same 有权
公开(公告)号：US08354324B2
公开(公告)日：2013-01-15
申请号：US13553420
申请日：2012-07-19
申请人： Jie Yao
发明人： Jie Yao
IPC分类号： H01L21/331
CPC分类号： H01L31/02161 , H01L27/14643 , H01L31/11
摘要： A two-terminal mesa phototransistor and a method for making it are disclosed. The photo transistor has a mesa structure having a substantially planar semiconductor surface. In the mesa structure is a first semiconductor region of a first doping type, and a second semiconductor region of a second doping type opposite to that of the first semiconductor region, forming a first semiconductor junction with the first region. In addition, a third semiconductor region of the first doping type forms a second semiconductor junction with the second region. The structure also includes a dielectric layer. The second semiconductor region, first semiconductor junction, and second semiconductor junction each has an intersection with the substantially planar semiconductor surface. The dielectric covers, and is in physical contact with, all of the intersections.

3. 发明授权

US09269846B2 Phototransistor capable of detecting photon flux below photon shot noise 有权
标题翻译：光电晶体管能够检测低于光子散射噪声的光子通量
公开(公告)号：US09269846B2
公开(公告)日：2016-02-23
申请号：US14181879
申请日：2014-02-17
申请人： Wavefront Holdings, LLC
发明人： Jie Yao
IPC分类号： G01J1/42 , H01L31/11 , G01S17/08 , H01L27/146
CPC分类号： H01L31/1105 , G01J1/42 , G01S7/4861 , G01S7/4913 , G01S17/08 , H01L27/14625 , H01L27/14681 , Y02E10/50
摘要： Disclosed herein is a phototransistor (PT) comprising an emitter, a collector, a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being lower than one single photon within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being below a photon shot noise of the photon flux within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux is 1/√{square root over (β)} of a photon shot noise of the photon flux within f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being below 2f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being 2f/β, wherein f is an electrical bandwidth of the PT and β is a current amplification gain of the PT.
摘要翻译：本文公开了一种光电晶体管（PT），其包括发射极，集电极，浮动基底，其中PT被配置为检测入射在PT上的光子通量，并且光子通量低于f内的单个光子，或者其中PT 被配置为检测入射在PT上的光子通量，并且光子通量低于f内的光子通量的光子散射噪声，或者其中PT被配置为检测入射在PT上的光子通量，并且光子通量为1 / 或者其中PT能够检测入射在PT上的光子通量，并且光子通量低于2f，或者其中PT是在...之上的光子散射噪声的平方根（＆bgr;）} 能够检测入射在PT上的光子通量，光子通量为2f /＆bgr;其中f是PT和＆bgr的电气带宽; 是PT的当前放大增益。

4. 发明授权

US10121819B2 Phototransistor having E-B junction and B-C junction are in direct physical contact and completely encapsulated only by the emitter, the collector and a dielectric 有权
公开(公告)号：US10121819B2
公开(公告)日：2018-11-06
申请号：US15372950
申请日：2016-12-08
申请人： Wavefront Holdings, LLC
发明人： Jie Yao
IPC分类号： H01L27/146 , H01L31/11
摘要： Disclosed herein is a phototransistor (PT) comprising an emitter, a collector and a floating base; wherein the floating base, a p-n junction between the emitter and base (E-B junction) and a p-n junction between the base and the collector (B-C junction) are collectively in direct physical contact only with and completely encapsulated only by the emitter, the collector, and a section of a dielectric. Under an operating condition of the PT, a DC current density averaged over the E-B junction or a DC current density averaged over the B-C junction may be at least 100 times of a DC current density averaged over an opto-electronically active region of the PT. A sum of a capacitance of the E-B junction and a capacitance of the B-C junction may be less than 1 fF.

5. 发明授权

US10002979B1 Unipolar doping in photodiode and phototransistor 有权
公开(公告)号：US10002979B1
公开(公告)日：2018-06-19
申请号：US15608685
申请日：2017-05-30
申请人： WAVEFRONT HOLDINGS, LLC
发明人： Jie Yao
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/105 , H01L31/107 , H01L31/11 , H01L31/0304 , H01L31/18 , H01L27/144
CPC分类号： H01L31/03529 , H01L27/1446 , H01L27/14649 , H01L27/14681 , H01L31/0304 , H01L31/105 , H01L31/1075 , H01L31/1105
摘要： Disclosed are a semiconductor photodiode (PD) or phototransistor (PT) photo detector with a unipolarly doped edge region containing a portion of the photon absorption layer and occupying over 99% of the photo detector area as projected on a plane parallel to the semiconductor substrate. Embodiments also relate to methods of making the photo detector.

6. 发明授权

US08314446B2 Photo-detector array, semiconductor image intensifier and methods of making and using the same 有权
标题翻译：光电检测器阵列，半导体图像增强器及其制作和使用方法
公开(公告)号：US08314446B2
公开(公告)日：2012-11-20
申请号：US12244938
申请日：2008-10-03
申请人： Jie Yao
发明人： Jie Yao
IPC分类号： H01L31/147 , H01L31/103 , H01L31/11
CPC分类号： H01L27/14603 , H01L27/14609 , H01L31/147
摘要： A sensor including an array of light sensitive pixels, each pixel including: at least one hetero-junction phototransistor having a floating base without contact, wherein each phototransistor is a mesa device having active layers exposed at side-walls of the mesa device; and at least one atomic layer deposited high-k dielectric material adjacent to and passivating at least the side-wall exposed active layers.
摘要翻译：一种包括光敏像素阵列的传感器，每个像素包括：至少一个异质结光电晶体管，具有不接触的浮动基座，其中每个光电晶体管是具有暴露在台面装置的侧壁处的有源层的台面装置; 以及至少一个原子层沉积的高k介电材料邻近并钝化至少所述侧壁暴露的有源层。

7. 发明授权

US11217719B2 Conductive isolation between phototransistors 有权
公开(公告)号：US11217719B2
公开(公告)日：2022-01-04
申请号：US16558957
申请日：2019-09-03
申请人： WAVEFRONT HOLDINGS, LLC
发明人： Jie Yao
IPC分类号： H01L31/00 , H01L31/11 , H01L27/146
摘要： Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.

8. 发明授权

US08253215B2 Mesa heterojunction phototransistor and method for making same 有权
标题翻译： Mesa异质结光电晶体管及其制作方法
公开(公告)号：US08253215B2
公开(公告)日：2012-08-28
申请号：US12687257
申请日：2010-01-14
申请人： Jie Yao
发明人： Jie Yao
IPC分类号： H01L31/00
CPC分类号： H01L31/02161 , H01L27/14643 , H01L31/11
摘要： A two-terminal mesa phototransistor and a method for making it are disclosed. The photo transistor has a mesa structure having a substantially planar semiconductor surface. In the mesa structure is a first semiconductor region of a first doping type, and a second semiconductor region of a second doping type opposite to that of the first semiconductor region, forming a first semiconductor junction with the first region. In addition, a third semiconductor region of the first doping type forms a second semiconductor junction with the second region. The structure also includes a dielectric layer. The second semiconductor region, first semiconductor junction, and second semiconductor junction each has an intersection with the substantially planar semiconductor surface. The dielectric covers, and is in physical contact with, all of the intersections.
摘要翻译：公开了一种双端子台面光电晶体管及其制造方法。光电晶体管具有具有基本平面的半导体表面的台面结构。在台面结构中是第一掺杂型的第一半导体区域和与第一半导体区域相反的第二掺杂类型的第二半导体区域，与第一区域形成第一半导体结。此外，第一掺杂类型的第三半导体区域与第二区域形成第二半导体结。该结构还包括介电层。第二半导体区域，第一半导体结和第二半导体结各自与基本上平面的半导体表面相交。电介质覆盖并与所有交点物理接触。

9. 发明申请

US20150280046A1 PHOTOTRANSISTOR CAPABLE OF DETECTING PHOTON FLUX BELOW PHOTON SHOT NOISE 有权
标题翻译：光电探测器能够检测下面的光电子通道
公开(公告)号：US20150280046A1
公开(公告)日：2015-10-01
申请号：US14181879
申请日：2014-02-17
申请人： Wavefront Holdings, LLC
发明人： Jie YAO
IPC分类号： H01L31/11 , G01J1/42 , H01L27/146
CPC分类号： H01L31/1105 , G01J1/42 , G01S7/4861 , G01S7/4913 , G01S17/08 , H01L27/14625 , H01L27/14681 , Y02E10/50
摘要： Disclosed herein is a phototransistor (PT) comprising an emitter, a collector, a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being lower than one single photon within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being below a photon shot noise of the photon flux within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux is 1/√{square root over (β)} of a photon shot noise of the photon flux within f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being below 2f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being 2f/β, wherein f is an electrical bandwidth of the PT and β is a current amplification gain of the PT.
摘要翻译：本文公开了一种光电晶体管（PT），其包括发射极，集电极，浮动基底，其中PT被配置为检测入射在PT上的光子通量，并且光子通量低于f内的单个光子，或者其中PT 被配置为检测入射在PT上的光子通量，并且光子通量低于f内的光子通量的光子散射噪声，或者其中PT被配置为检测入射在PT上的光子通量，并且光子通量为1 / 或者其中PT能够检测入射在PT上的光子通量，并且光子通量低于2f，或者其中PT是在...之上的光子散射噪声的平方根（＆bgr;）} 能够检测入射在PT上的光子通量，光子通量为2f /＆bgr;其中f是PT和＆bgr的电气带宽; 是PT的当前放大增益。

10. 发明申请

US20120282720A1 MESA HETEROJUNCTION PHOTOTRANSISTOR AND METHOD FOR MAKING SAME 有权
标题翻译： MESA异位照相机及其制造方法
公开(公告)号：US20120282720A1
公开(公告)日：2012-11-08
申请号：US13553420
申请日：2012-07-19
申请人： Jie YAO
发明人： Jie YAO
IPC分类号： H01L31/18
CPC分类号： H01L31/02161 , H01L27/14643 , H01L31/11
摘要： A two-terminal mesa phototransistor and a method for making it are disclosed. The photo transistor has a mesa structure having a substantially planar semiconductor surface. In the mesa structure is a first semiconductor region of a first doping type, and a second semiconductor region of a second doping type opposite to that of the first semiconductor region, forming a first semiconductor junction with the first region. In addition, a third semiconductor region of the first doping type forms a second semiconductor junction with the second region. The structure also includes a dielectric layer. The second semiconductor region, first semiconductor junction, and second semiconductor junction each has an intersection with the substantially planar semiconductor surface. The dielectric covers, and is in physical contact with, all of the intersections.
摘要翻译：公开了一种双端子台面光电晶体管及其制造方法。光电晶体管具有具有基本平面的半导体表面的台面结构。在台面结构中是第一掺杂型的第一半导体区域和与第一半导体区域相反的第二掺杂类型的第二半导体区域，与第一区域形成第一半导体结。此外，第一掺杂类型的第三半导体区域与第二区域形成第二半导体结。该结构还包括介电层。第二半导体区域，第一半导体结和第二半导体结各自与基本上平面的半导体表面相交。电介质覆盖并与所有交点物理接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式