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1. 发明申请

US20200006591A1 CONDUCTIVE ISOLATION BETWEEN PHOTOTRANSISTORS 审中-公开
公开(公告)号：US20200006591A1
公开(公告)日：2020-01-02
申请号：US16558957
申请日：2019-09-03
申请人： WAVEFRONT HOLDINGS, LLC
发明人： Jie YAO
IPC分类号： H01L31/11
摘要： Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.

2. 发明授权

US10453984B2 Conductive isolation between phototransistors 有权
公开(公告)号：US10453984B2
公开(公告)日：2019-10-22
申请号：US15467478
申请日：2017-03-23
申请人： WAVEFRONT HOLDINGS, LLC
发明人： Jie Yao
IPC分类号： H01L21/00 , H01L31/11 , H01L27/146
摘要： Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.

3. 发明授权

US09269846B2 Phototransistor capable of detecting photon flux below photon shot noise 有权
标题翻译：光电晶体管能够检测低于光子散射噪声的光子通量
公开(公告)号：US09269846B2
公开(公告)日：2016-02-23
申请号：US14181879
申请日：2014-02-17
申请人： Wavefront Holdings, LLC
发明人： Jie Yao
IPC分类号： G01J1/42 , H01L31/11 , G01S17/08 , H01L27/146
CPC分类号： H01L31/1105 , G01J1/42 , G01S7/4861 , G01S7/4913 , G01S17/08 , H01L27/14625 , H01L27/14681 , Y02E10/50
摘要： Disclosed herein is a phototransistor (PT) comprising an emitter, a collector, a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being lower than one single photon within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being below a photon shot noise of the photon flux within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux is 1/√{square root over (β)} of a photon shot noise of the photon flux within f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being below 2f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being 2f/β, wherein f is an electrical bandwidth of the PT and β is a current amplification gain of the PT.
摘要翻译：本文公开了一种光电晶体管（PT），其包括发射极，集电极，浮动基底，其中PT被配置为检测入射在PT上的光子通量，并且光子通量低于f内的单个光子，或者其中PT 被配置为检测入射在PT上的光子通量，并且光子通量低于f内的光子通量的光子散射噪声，或者其中PT被配置为检测入射在PT上的光子通量，并且光子通量为1 / 或者其中PT能够检测入射在PT上的光子通量，并且光子通量低于2f，或者其中PT是在...之上的光子散射噪声的平方根（＆bgr;）} 能够检测入射在PT上的光子通量，光子通量为2f /＆bgr;其中f是PT和＆bgr的电气带宽; 是PT的当前放大增益。

4. 发明授权

US10121819B2 Phototransistor having E-B junction and B-C junction are in direct physical contact and completely encapsulated only by the emitter, the collector and a dielectric 有权
公开(公告)号：US10121819B2
公开(公告)日：2018-11-06
申请号：US15372950
申请日：2016-12-08
申请人： Wavefront Holdings, LLC
发明人： Jie Yao
IPC分类号： H01L27/146 , H01L31/11
摘要： Disclosed herein is a phototransistor (PT) comprising an emitter, a collector and a floating base; wherein the floating base, a p-n junction between the emitter and base (E-B junction) and a p-n junction between the base and the collector (B-C junction) are collectively in direct physical contact only with and completely encapsulated only by the emitter, the collector, and a section of a dielectric. Under an operating condition of the PT, a DC current density averaged over the E-B junction or a DC current density averaged over the B-C junction may be at least 100 times of a DC current density averaged over an opto-electronically active region of the PT. A sum of a capacitance of the E-B junction and a capacitance of the B-C junction may be less than 1 fF.

5. 发明申请

US20180233532A1 PHOTOTRANSISTOR 审中-公开
公开(公告)号：US20180233532A1
公开(公告)日：2018-08-16
申请号：US15372950
申请日：2016-12-08
申请人： Wavefront Holdings, LLC
发明人： Jie Yao
IPC分类号： H01L27/146 , H01L31/11
CPC分类号： H01L27/14681 , H01L27/14603 , H01L31/1105
摘要： Disclosed herein is a phototransistor (PT) comprising an emitter, a collector and a floating base; wherein the floating base, a p-n junction between the emitter and base (E-B junction) and a p-n junction between the base and the collector (B-C junction) are collectively in direct physical contact only with and completely encapsulated only by the emitter, the collector, and a section of a dielectric. Under an operating condition of the PT, a DC current density averaged over the E-B junction or a DC current density averaged over the B-C junction may be at least 100 times of a DC current density averaged over an opto-electronically active region of the PT. A sum of a capacitance of the E-B junction and a capacitance of the B-C junction may be less than 1 fF.

6. 发明授权

US10002979B1 Unipolar doping in photodiode and phototransistor 有权
公开(公告)号：US10002979B1
公开(公告)日：2018-06-19
申请号：US15608685
申请日：2017-05-30
申请人： WAVEFRONT HOLDINGS, LLC
发明人： Jie Yao
IPC分类号： H01L27/146 , H01L31/0352 , H01L31/105 , H01L31/107 , H01L31/11 , H01L31/0304 , H01L31/18 , H01L27/144
CPC分类号： H01L31/03529 , H01L27/1446 , H01L27/14649 , H01L27/14681 , H01L31/0304 , H01L31/105 , H01L31/1075 , H01L31/1105
摘要： Disclosed are a semiconductor photodiode (PD) or phototransistor (PT) photo detector with a unipolarly doped edge region containing a portion of the photon absorption layer and occupying over 99% of the photo detector area as projected on a plane parallel to the semiconductor substrate. Embodiments also relate to methods of making the photo detector.

7. 发明申请

US20180277703A1 CONDUCTIVE ISOLATION BETWEEN PHOTOTRANSISTORS 审中-公开
公开(公告)号：US20180277703A1
公开(公告)日：2018-09-27
申请号：US15467478
申请日：2017-03-23
申请人： WAVEFRONT HOLDINGS, LLC
发明人： JIE YAO
IPC分类号： H01L31/11
CPC分类号： H01L31/1105 , H01L27/146 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14694
摘要： Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.

8. 发明申请

US20150280046A1 PHOTOTRANSISTOR CAPABLE OF DETECTING PHOTON FLUX BELOW PHOTON SHOT NOISE 有权
标题翻译：光电探测器能够检测下面的光电子通道
公开(公告)号：US20150280046A1
公开(公告)日：2015-10-01
申请号：US14181879
申请日：2014-02-17
申请人： Wavefront Holdings, LLC
发明人： Jie YAO
IPC分类号： H01L31/11 , G01J1/42 , H01L27/146
CPC分类号： H01L31/1105 , G01J1/42 , G01S7/4861 , G01S7/4913 , G01S17/08 , H01L27/14625 , H01L27/14681 , Y02E10/50
摘要： Disclosed herein is a phototransistor (PT) comprising an emitter, a collector, a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being lower than one single photon within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being below a photon shot noise of the photon flux within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux is 1/√{square root over (β)} of a photon shot noise of the photon flux within f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being below 2f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being 2f/β, wherein f is an electrical bandwidth of the PT and β is a current amplification gain of the PT.
摘要翻译：本文公开了一种光电晶体管（PT），其包括发射极，集电极，浮动基底，其中PT被配置为检测入射在PT上的光子通量，并且光子通量低于f内的单个光子，或者其中PT 被配置为检测入射在PT上的光子通量，并且光子通量低于f内的光子通量的光子散射噪声，或者其中PT被配置为检测入射在PT上的光子通量，并且光子通量为1 / 或者其中PT能够检测入射在PT上的光子通量，并且光子通量低于2f，或者其中PT是在...之上的光子散射噪声的平方根（＆bgr;）} 能够检测入射在PT上的光子通量，光子通量为2f /＆bgr;其中f是PT和＆bgr的电气带宽; 是PT的当前放大增益。

9. 发明授权

US11217719B2 Conductive isolation between phototransistors 有权
公开(公告)号：US11217719B2
公开(公告)日：2022-01-04
申请号：US16558957
申请日：2019-09-03
申请人： WAVEFRONT HOLDINGS, LLC
发明人： Jie Yao
IPC分类号： H01L31/00 , H01L31/11 , H01L27/146
摘要： Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.

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