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1. 发明授权

US11570928B2 Server node connector mating condition health monitoring and reporting 有权
公开(公告)号：US11570928B2
公开(公告)日：2023-01-31
申请号：US17000299
申请日：2020-08-22
申请人： international Business Machines Corporation
发明人： Sri M Sri-Jayantha , Hien P Dang , Vijayeshwar D Khanna
IPC分类号： H05K7/14 , G08B21/18 , H01R25/00 , G01B21/22 , G01B21/16 , G01R31/67
摘要： A server node connection system uses two or more proximity sensors per server node to determine progressive, real time changes in wipe length for each individual connector on the node that is connected to an opposing header connector on header connected to a midplane of the server assembly/rack. The system is capable of scanning, monitoring, trending, and alarming.

2. 发明授权

US11532421B2 Magnetic cores with high reluctance differences in flux paths 有权
公开(公告)号：US11532421B2
公开(公告)日：2022-12-20
申请号：US17174453
申请日：2021-02-12
申请人： International Business Machines Corporation
发明人： Yuan Yao , Todd Edward Takken , Andrew Ferencz , Xin Zhang , Liam Daley McAuliffe
IPC分类号： H01F27/26 , H02M3/335 , H01F41/02 , H01F1/147 , H01F27/28
摘要： Embodiment of the present invention includes a magnetic structure and a magnetic structure used in a direct current (DC) to DC energy converter. The magnetic structure has an E-core and a plate, with the plate positioned in contact or in near contact with the post surfaces of the E-core. The E-core has a base, a no-winding leg, a transformer leg, and an inductor leg. The no-winding leg, the transformer leg, and the inductor leg are perpendicular and magnetically in contact with the base. The plate is a flat slab with lateral dimensions generally larger than its thickness. The plate has a plate nose that overlaps a top no-winding leg surface of the no-winding leg with a no-winding gap area to form a no-winding gap with a no-winding gap reluctance. The plate also has a plate end that overlaps a top inductor leg surface of the inductor leg with an inductor gap area to form an inductor gap with an inductor gap reluctance. In some embodiments, e.g., where the duty cycle is less than 50 percent, the inductor gap reluctance will be designed to be less than the no-winding gap reluctance. In these cases, the majority of the magnetic flux that passes through the transformer leg will return through the inductor leg, instead of through the no-winding leg. The inductor and no-winding gap reluctances can he adjusted, so that the electromotive force applied to a charge passing through the inductor will partially cancel the electromotive force applied by the transformer secondary. The gap reluctance ratio can be defined, so that the difference in secondary and inductor electromotive forces is equal to the output voltage defined by an optimal no-ripple duty cycle. In this way no changing current is required through the inductor to create a dI/dt inductive voltage drop across the output inductor. Zero output current ripple is achieved.
Various embodiments of the plate, plate shape, and no-winding leg are disclosed. These embodiments allow achieving a high ratio of no-winding gap reluctance to inductor gap reluctance, for practical, affordable magnetic material structures and aspect ratios. A high gap reluctance ratio enables zero output current ripple for the high transformer turns ratios that are needed to achieve high input to output voltage ratios. The embodiments therefore allow achieving low output current ripple for 48 V or higher input voltages, 1 V or lower output voltages, and high output currents.

3. 发明授权

US11489219B2 Encapsulating in-situ energy storage device with electrode contact 有权
公开(公告)号：US11489219B2
公开(公告)日：2022-11-01
申请号：US16445185
申请日：2019-06-18
申请人： International Business Machines Corporation
发明人： John Collins , Devendra K. Sadana , Bucknell C. Webb , Paul S. Andry
IPC分类号： H01M50/10 , H01M4/505 , H01M10/0565 , H01L23/58 , H01L23/00 , H01M50/116 , H01M50/172 , H01M50/531
摘要： An energy storage device sits within a trench with electrically insulated sides within a substrate. Within the trench there is an anode, an electrolyte disposed on the anode, and a cathode structure disposed on the electrolyte. Variations of an electrically conductive contact are disposed on and in electrical contact with the cathode structure. At least part of the conductive contact is disposed within the trench and the conductive contact partially seals the anode, electrolyte, and cathode structure within the trench. Conductive and/or non-conductive adhesives are used to complete the seal thereby enabling full working electrochemical devices where singulation of the devices from the substrate enables high control of device dimensionality and footprint.

4. 发明授权

US11342697B2 Dual-level pad card edge self-guide and alignment of connector 有权
公开(公告)号：US11342697B2
公开(公告)日：2022-05-24
申请号：US16892426
申请日：2020-06-04
申请人： International Business Machines Corporation
发明人： Paul W Coteus , Thomas Cipolla , Kyu-hyoun Kim , Edmund Blackshear
IPC分类号： H01R12/72 , H05K3/00 , H05K1/18 , H01R12/70
摘要： A card, e.g. a printed circuit board (PCB), has one or more conductive layers and one or more non-conductive layers disposed and alternating upon one another to form a stack. One or more of the conductive layers has one or more wiring elements within the conductive layer. The PCB/card has one or more card edges. The PCB also has a plurality of dual-level pad structures on each of one or more of the card edges. The dual-level pad structures each have an upper level, a lower level, and two or more walls. The lower level is a conductive pad with conductive surface. At least one of the conductive pads electrically connects to one or more of the wiring elements and/or one or more vias. In each of the dual-level pad structures, the walls and upper level may be made of an electrically non-conductive, insulating, or dielectric material or may be covered with a conductive material that electrically connects to conductive surface. There are different non-limiting embodiments of the structures and methods of making the structures.

5. 发明授权

US11315923B2 Stacked nanosheet inverter 有权
公开(公告)号：US11315923B2
公开(公告)日：2022-04-26
申请号：US17023891
申请日：2020-09-17
申请人： International Business Machines Corporation
发明人： Alexander Reznicek , Karthik Balakrishnan , Bahman Hekmatshoartabari
IPC分类号： H01L21/02 , H01L21/8238 , H01L23/528 , H01L27/092 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/66 , H01L29/786
摘要： A cross-coupled inverter made of nanolayers from a nanosheet stack structure has a left field effect transistor (FET) stack and a right FET stack. The left FET stack has a second left FET stacked on a first left FET. The first and second left FETs have opposite types. The right FET stack has a second right FET stacked on a first right FET. The first and second right FETs have opposite types. The first left and first right FET have a first common source drain (S/D). The left FET stack has a left gate stack surrounding the one or more first left FET channel layers and the one or more second left FET channel layers. The right FET stack has a right gate stack surrounding the one or more first right FET channel layers and the one or more second right FET channel layers. In some embodiments the left/right gate stack has a left/right center gate stack layer and one or more left/right gate stack layers. The center gate stack layers are thicker than the gate stack layers and are between the first and second FETs. The insulating layer surrounds the middle of the center gate stack layers. The first right FET S/D and the second right FET S/D are internally and electrically connected and connected to a Q external connection. The Q external connection is externally connected to the left gate stack. The first left FET S/D and the second left FET S/D are internally, electrically connected together and connected to a QB external connection. The QB external connection is externally connected to the right gate stack.
During operation, the first common S/D is connected to a first external power contact and the second common S/D is connected to a second external power contact and the Q external connection has a logically opposite value of the QB external connection during a desired operation phase. Chip area is reduced because of the low number of external connections required to wire the cross-coupled inverter device.

6. 发明授权

US11315902B2 High bandwidth multichip module 有权
公开(公告)号：US11315902B2
公开(公告)日：2022-04-26
申请号：US16788459
申请日：2020-02-12
申请人： International Business Machines Corporation
发明人： John Knickerbocker
IPC分类号： H01L25/065 , H01L21/56 , H01L23/538 , H01L23/00 , H01L25/00 , H01L23/498 , H01L23/66 , H01L25/18
摘要： Multi-semiconductor chip modules that have a substrate with a substrate surface, one or more first substrate connections, and one or more second substrate connections. One or more first semiconductor chips (chips) has one or more larger first chip connections and one or more smaller first chip connections on a first chip bottom surface. One or more of the larger first chip connections physically and electrically connected to a respective first substrate connection. One or more second chips has one or more larger second chip connections and one or more smaller second chip connections on a second chip bottom surface. One or more of the larger second chip connections physically and electrically connected to a respective second substrate connection. A bridge has a bridge thickness, a bridge surface, and one or more bridge connections on the bridge surface. A first part of the bridge surface is under the first chip bottom surface and a second part of the bridge surface is under the second chip bottom surface. The bridge is disposed on the substrate between the first semiconductor chip and the second semiconductor chip, and one or more of the smaller first chip connections is physically and electrically connected to a respective first bridge connection on the first part of the bridge surface and one or more of the smaller second chip connection is physically and electrically connected to a respective second bridge connection. Some embodiments, a large surface bridge with the bridge. The large surface bridge and bridge can have different configurations. The bridge thickness allows larger chip connections and smaller connections with high pitch to intermingled in a location within the module. Methods of manufacture are disclosed.

7. 发明授权

US11110534B2 Continuous solder transfer to substrates 有权
公开(公告)号：US11110534B2
公开(公告)日：2021-09-07
申请号：US16378547
申请日：2019-04-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Jae-Woong Nah , Stephen L. Buchwalter , Peter A. Gruber , Da-Yuan Shih , Paul Alfred Lauro
IPC分类号： B23K1/00 , B23K3/06 , H01L23/00 , B23K3/08
摘要： In an Injection Molded Soldering system, a single, one-layer decal has one or more through hole patterns where each through hole pattern has a plurality of through holes through the decal. A drum with a drum circumference turns while the decal is forced to be adjacent to the drum circumference. The decal passes by a tangent point on the drum circumference where one or more solder-filled through hole patterns align with recessed openings on a substrate at the tangent point of the drum circumference. Applied heat causes the solder structures to melt and flow into the recessed openings.

8. 发明授权

US11594574B2 Piezo-junction device 有权
公开(公告)号：US11594574B2
公开(公告)日：2023-02-28
申请号：US15898240
申请日：2018-02-16
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Glenn J. Martyna , Kirsten Emilie Moselund , Dennis M. Newns
IPC分类号： H01L27/20 , H01L29/66 , H01L41/047 , H01L41/187 , H01L29/84 , H01L41/09
摘要： A piezo-junction device may be provided. The piezo-junction device comprises a piezoelectric element comprising two electrodes and piezoelectric material in-between, and a semiconductor junction device adjacent to the piezoelectric element such that one of the two electrodes of the piezoelectric element is in contact with the semiconductor junction device connecting the semiconductor junction device and the piezoelectric element electrically in series. Thereby, the semiconductor junction device and the piezoelectric element are together positioned in a fixed mechanical clamp such that the piezoelectric element with an applied electrical field applies strain to the semiconductor junction device causing a change in Fermi levels of the semiconductor junction device.

9. 发明授权

US11586652B2 Variable-length word embedding 有权
公开(公告)号：US11586652B2
公开(公告)日：2023-02-21
申请号：US16876196
申请日：2020-05-18
申请人： International Business Machines Corporation
发明人： Debasis Ganguly , Léa Deleris
IPC分类号： G06N20/00 , G06F16/28 , G06N3/08
摘要： A data structure is used to configure and transform a computer machine learning system. The data structure has one or more records where each record is a (vector) representation of a selected object in a corpus. One or more non-zero parameters in the records define the selected object and the number of the non-zero parameters define a word length of the record. One or more zero-value parameters are in one or more of the records. The word length of the object representation varies, e.g. can increase, as necessary to accurately represent the object within one or more contexts provided during training of a neural network used to create the database, e.g. as more and more contexts are introduced during the training. A minimum number of non-zero parameters are needed and zero-value parameters can be clustered together and compressed to save large amounts of system storage and shorten execution times.

10. 发明授权

US11545415B2 Pressure controllable encapsulated liquid thermal interface 有权
公开(公告)号：US11545415B2
公开(公告)日：2023-01-03
申请号：US16716367
申请日：2019-12-16
申请人： International Business Machines Corporation
发明人： Sri M. Sri-Jayantha , Gerard McVicker
IPC分类号： F28F7/00 , H01L23/473 , H01L23/433 , H01L23/373
摘要： Heat is transferred to a cold plate from one or more subassemblies in an array of subassemblies in an electronic package. The cold plate has a thermally conductive cold plate substrate, a pressure header, a pressure passage, and one or more pressure connections. Each of the pressure connections connects through a housing opening to housing volume defined by a flexible housing in an encapsulated liquid thermal interface (LTI). The flexible housing is in physical and thermal contact with one of the subassemblies through a housing bottom and a top surface of one or more components in the subassembly. A thermally conductive fluid fills the housing volume, housing opening, pressure connections, pressure passage, and pressure header which are all in fluid communication along with one or more other connections, housing openings, and LTIs on other subassemblies. The system transfers heat from the subassemblies to the cold plate while maintaining a constant pressure/stress on each of the subassemblies. The system pressure on each of the subassemblies is equal. The system pressure can be controlled to a preloaded pressure to insure good electrical contact between components. Shear on the subassemblies is minimized by the LTIs.

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