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1. 外观设计

USD750021S1 Operation panel for an uninterruptible power supply 有权
标题翻译：不间断电源的操作面板
公开(公告)号：USD750021S1
公开(公告)日：2016-02-23
申请号：US29507068
申请日：2014-10-23
申请人： Eaton Corporation
设计人： Bin Gao , Yunpeng Zhen , Jian Wei

2. 发明授权

US09257441B2 Semiconductor memory devices and methods of forming the same 有权
公开(公告)号：US09257441B2
公开(公告)日：2016-02-09
申请号：US14082657
申请日：2013-11-18
申请人： Samsung Electronics Co., Ltd.
发明人： Jung Ho Kim , Daehyun Jang , Myoungbum Lee , Kihyun Hwang , Sangryol Yang , Yong-Hoon Son , Ju-Eun Kim , Sunghae Lee , Dongwoo Kim , JinGyun Kim
IPC分类号： H01L29/76 , H01L27/115 , H01L29/792 , H01L21/02
CPC分类号： H01L27/11582 , H01L21/02675 , H01L21/30604 , H01L21/324 , H01L27/11551 , H01L27/11578 , H01L29/7926
摘要： Methods of forming semiconductor devices may be provided. A method of forming a semiconductor device may include patterning first and second material layers to form a first through region exposing a substrate. The method may include forming a first semiconductor layer in the first through region on the substrate and on sidewalls of the first and second material layers. In some embodiments, the method may include forming a buried layer filling the first through region on the first semiconductor layer. In some embodiments, the method may include removing a portion of the buried layer to form a second through region between the sidewalls of the first and second material layers. Moreover, the method may include forming a second semiconductor layer in the second through region.

3. 发明授权

US09253586B2 Devices, methods and computer program products for controlling loudness 有权
标题翻译：用于控制响度的设备，方法和计算机程序产品
公开(公告)号：US09253586B2
公开(公告)日：2016-02-02
申请号：US13871260
申请日：2013-04-26
申请人： Sony Corporation
发明人： Martin Nystrom , Sead Smailagic
IPC分类号： H03G5/00 , H03B9/00 , H03G3/00 , H04S7/00 , H03G5/16 , H03G3/20
CPC分类号： H04S7/307 , G10H2250/161 , H03G3/20 , H03G5/165
摘要： A method by an electronic device for controlling a frequency response of audio output includes: receiving an audio signal at the device; estimating a sound pressure level of the audio signal based on one or more attributes or settings of the electronic device and/or the audio signal; generating values of an adaptive loudness control curve along a range of frequencies, wherein the adaptive loudness control curve is generated based on a difference between values of an equal loudness curve at the estimated sound pressure level along and values of an equal loudness curve at a reference sound pressure level; filtering the audio signal using values of the adaptive loudness control curve; and controlling output of the filtered audio signal as an audio output having substantially the same loudness along the range of frequencies.
摘要翻译：用于控制音频输出的频率响应的电子设备的方法包括：在设备处接收音频信号; 基于电子设备和/或音频信号的一个或多个属性或设置来估计音频信号的声压级; 沿着频率范围产生自适应响度控制曲线的值，其中基于估计的声压级上的相等响度曲线的值与参考的相等响度曲线的值之间的差产生自适应响度控制曲线声压级; 使用自适应响度控制曲线的值对音频信号进行滤波; 并且将经滤波的音频信号的输出控制为具有沿频率范围具有基本相同响度的音频输出。

4. 发明授权

US09224493B2 Nonvolatile memory device and read method thereof 有权
标题翻译：非易失性存储器件及其读取方法
公开(公告)号：US09224493B2
公开(公告)日：2015-12-29
申请号：US14280920
申请日：2014-05-19
申请人： Changhyun Lee , Jungdal Choi , Byeong-In Choe
发明人： Changhyun Lee , Jungdal Choi , Byeong-In Choe
IPC分类号： G11C16/26 , G11C16/30 , G11C16/34 , G11C8/10 , G11C11/56 , G11C16/04 , G11C29/00
CPC分类号： G11C16/26 , G11C8/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/3418 , G11C16/3436 , G11C16/3454 , G11C16/3459 , G11C29/00
摘要： A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.
摘要翻译：非易失性存储器件通过补偿闪存单元的阈值电压而提高了可靠性。非易失性存储器件包括：存储单元阵列和电压发生器，用于在执行读取操作时将选择读取电压提供给选择字线，并将未选择读取电压提供给未选择的字线;以及将验证电压提供给选择字线以及当执行编程操作时，对未选字线的取消选择读取电压。电压发生器在执行编程操作时将第一未读选择电压提供给与选择字线相邻的上字线和下字线之间的至少一个，并且将第二未选择读电压提供给上当执行读操作时，字线和与选择字线相邻的下字线。

5. 发明授权

US09224441B2 Nonvolatile memory device using variable resistive element and memory system having the same 有权
标题翻译：使用可变电阻元件和存储器系统的非易失性存储器件具有相同的功能
公开(公告)号：US09224441B2
公开(公告)日：2015-12-29
申请号：US14099330
申请日：2013-12-06
申请人： Samsung Electronics Co., Ltd.
发明人： Sung-Yeon Lee , Yeong-Taek Lee
IPC分类号： G11C7/14 , G11C11/16 , G11C11/406 , G11C11/56 , G11C13/00 , G11C16/28 , G11C16/34
CPC分类号： G11C7/14 , G11C11/16 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1693 , G11C11/406 , G11C11/56 , G11C13/0002 , G11C13/0004 , G11C13/0033 , G11C13/004 , G11C16/28 , G11C16/3418 , G11C2013/0054 , G11C2213/71 , G11C2213/72
摘要： A nonvolatile memory device, which has an improved read reliability through a refresh operation, and a memory system, are provided. The nonvolatile memory device includes a resistive memory cell, a reference resistor corresponding to the resistive memory cell, a reference sense amplifier electrically connected to the reference resistor and configured to change a transition time of an output value of the reference resistor, and a refresh request signal generator configured to output the refresh request signal for the resistive memory cell when the transition time of an output value of the reference resistor is in a preset refresh requiring period.
摘要翻译：提供了通过刷新操作具有改善的读取可靠性的非易失性存储器件和存储器系统。非易失性存储器件包括电阻存储单元，对应于电阻存储单元的参考电阻，与参考电阻器电连接并被配置为改变参考电阻器的输出值的转换时间的参考读出放大器和刷新请求信号发生器被配置为当参考电阻器的输出值的转换时间处于预设的刷新需求周期时，输出用于电阻性存储器单元的刷新请求信号。

6. 发明授权

US09224088B2 Methods, systems, and computer program products for simulating a scenario by updating events over a time window including the past, present, and future 有权
标题翻译：用于通过在包括过去，现在和将来的时间窗口中更新事件来模拟场景的方法，系统和计算机程序产品
公开(公告)号：US09224088B2
公开(公告)日：2015-12-29
申请号：US13632646
申请日：2012-10-01
申请人： Christopher Hazard
发明人： Christopher Hazard
IPC分类号： G06G7/48 , G06N3/00
CPC分类号： G06N3/006
摘要： A scenario is simulated by providing an agent that is an object in the scenario, providing a time window for the scenario that spans the farthest reachable past time and the farthest reachable future time with respect to a present time for the agent and/or at least one player that interacts with the simulated scenario, providing at least one event that represents a change in at least one attribute of the agent, and updating a state of the scenario by applying the at least one event to the agent within the time window.
摘要翻译：通过提供作为场景中的对象的代理来提供场景，为相对于代理的当前时间提供跨越最远的可达的过去时间和最远的可到达的未来时间的场景的时间窗口和/或至少与所述模拟场景交互的一个玩家，提供至少一个代表所述代理的至少一个属性中的改变的事件，以及通过在所述时间窗口内向所述代理应用所述至少一个事件来更新所述场景的状态。

7. 发明授权

US09214409B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09214409B2
公开(公告)日：2015-12-15
申请号：US13786853
申请日：2013-03-06
申请人： Samsung Electronics Co., Ltd.
发明人： Jin-Hyuk Yoo , Dae-Hyun Jang , Yoo-Chul Kong , Kyoung-Sub Shin
IPC分类号： H01L29/76 , H01L23/48 , H01L27/115
CPC分类号： H01L27/1157 , H01L23/48 , H01L23/528 , H01L27/11524 , H01L27/11556 , H01L27/11573 , H01L27/11582 , H01L29/0649 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.
摘要翻译：提供一种半导体器件。半导体器件包括设置在半导体衬底上的导电图案。设置在导电图案上并且彼此位于相同水平面的第一和第二导电线。隔离图案设置在第一和第二导线之间。提供穿过第一导线和导电图案的第一垂直结构。提供穿过第二导线和导电图案的第二垂直结构。提供穿过导电图案并与隔离图案接触的辅助图案。

8. 发明授权

US09196827B2 Non-volatile memory devices having dual heater configurations and methods of fabricating the same 有权
标题翻译：具有双重加热器配置的非易失性存储器件及其制造方法
公开(公告)号：US09196827B2
公开(公告)日：2015-11-24
申请号：US13547663
申请日：2012-07-12
申请人： Gyu-Hwan Oh , Doo-Hwan Park , Young-Kuk Kim
发明人： Gyu-Hwan Oh , Doo-Hwan Park , Young-Kuk Kim
IPC分类号： H05B3/00 , H01L45/00 , H05B3/14 , H01L27/02 , H01L27/102 , H01L27/24
CPC分类号： H01L45/1233 , H01L27/0296 , H01L27/1021 , H01L27/2409 , H01L45/06 , H01L45/1246 , H01L45/126 , H01L45/144 , H01L45/145 , H01L45/1683 , H05B3/141
摘要： A non-volatile memory device includes a data storage structure coupled between first and second conductive lines of the memory device. The data storage structure includes a conductive lower heater element, a data storage pattern, and a conductive upper heater element sequentially stacked. At least one sidewall surface of the data storage pattern is coplanar with a sidewall surface of the upper heater element thereabove and a sidewall surface of the lower heater element therebelow. Related fabrication methods are also discussed.
摘要翻译：非易失性存储器件包括耦合在存储器件的第一和第二导线之间的数据存储结构。数据存储结构包括依次堆叠的导电下加热器元件，数据存储模式和导电上加热器元件。数据存储图案的至少一个侧壁表面与上述上加热器元件的侧壁表面和下加热器元件的侧壁表面共面。还讨论了相关的制造方法。

9. 发明授权

US09195579B2 Page replacement method and memory system using the same 有权
标题翻译：页面替换方法和使用相同的内存系统
公开(公告)号：US09195579B2
公开(公告)日：2015-11-24
申请号：US13754161
申请日：2013-01-30
申请人： Samsung Electronics Co., Ltd. , Research & Business Foundation, Sungkyunkwan University
发明人： Oh-Seong Kwon , Hwansoo Han , Sun-Young Lim , Seonggun Kim
IPC分类号： G06F12/00 , G06F12/02 , G06F12/08 , G06F12/12
CPC分类号： G06F12/0238 , G06F12/0246 , G06F12/08 , G06F12/121 , G06F2212/205 , G06F2212/222
摘要： A memory system includes a central processing unit (CPU), a nonvolatile memory electrically coupled to the CPU and a main memory, which is configured to swap an incoming code page for a target code page therein, in response to a first command issued by the CPU. The main memory can be configured to swap the target code page in the main memory to the nonvolatile memory in the event a page capacity of the main memory is at a threshold capacity. The CPU may also be configured to perform a frequency of use analysis on the target code page to determine whether the target code page is to be swapped to the nonvolatile memory or discarded. The incoming code page may be provided by a disk drive storage device and the main memory may be a volatile memory.
摘要翻译：存储器系统包括中央处理单元（CPU），电耦合到CPU的非易失性存储器和主存储器，其被配置为响应于由所述主存储器发出的第一命令来交换其中的目标代码页的输入代码页中央处理器。主存储器可被配置为在主存储器的页面容量处于阈值容量的情况下将主存储器中的目标代码页交换到非易失性存储器。 CPU还可以被配置为在目标代码页上执行使用分析频率，以确定目标代码页是否被交换到非易失性存储器或被丢弃。输入代码页可以由磁盘驱动器存储设备提供，并且主存储器可以是易失性存储器。

10. 发明授权

US09190592B2 Thin film thermoelectric devices having favorable crystal tilt 有权
标题翻译：具有良好晶体倾斜的薄膜热电元件
公开(公告)号：US09190592B2
公开(公告)日：2015-11-17
申请号：US13833651
申请日：2013-03-15
申请人： Nextreme Thermal Solutions, Inc.
发明人： Robert P. Vaudo , Philip A. Deane , Thomas Peter Schneider , Christopher D. Holzworth , Joseph Robert Williamson
IPC分类号： H01L35/34 , H01L35/04 , H01L35/32
CPC分类号： H01L35/04 , H01L35/32 , H01L35/34
摘要： A method of fabricating a thermoelectric device includes providing a substrate having a plurality of inclined growth surfaces protruding from a surface thereof. Respective thermoelectric material layers are grown on the inclined growth surfaces, and the respective thermoelectric material layers coalesce to collectively define a continuous thermoelectric film. A surface of the thermoelectric film opposite the surface of the substrate may be substantially planar, and a crystallographic orientation of the thermoelectric film may be tilted at an angle of about 45 degrees or less relative to a direction along a thickness thereof. Related devices and fabrication methods are also discussed.
摘要翻译：一种制造热电装置的方法包括提供具有从其表面突出的多个倾斜生长表面的基板。相应的热电材料层生长在倾斜的生长表面上，并且各个热电材料层聚结以共同限定连续的热电膜。与基板的表面相对的热电膜的表面可以是基本上平面的，并且热电膜的结晶取向可以相对于沿其厚度的方向以大约45度或更小的角度倾斜。还讨论了相关设备和制造方法。

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