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1. 发明授权

US10219556B2 Actively controlled performance clothing 有权
公开(公告)号：US10219556B2
公开(公告)日：2019-03-05
申请号：US14966540
申请日：2015-12-11
申请人： International Business Machines Corporation
发明人： David M Daly , David Joel Edelsohn , Kaoutar El Maghraoui , Jose Eduardo Moreira , Priya A Nagpurkar , Jessica Hui-Chun Tseng
IPC分类号： A41D13/00 , A41D31/00 , A41D13/002 , A61B5/00 , A61B5/0205 , A61B5/024 , A61B5/11
摘要： A method includes embedding clothing with at least one sensor and at least one control unit; a power unit powering on the at least one sensor and the at least one control unit; the at least one sensor monitoring a sensed condition; the at least one control unit conducting a heat prediction based on the sensed condition; and the at least one control unit controlling threads within the clothing based on the heat prediction to actively adjust properties of the clothing.

2. 发明授权

US09385039B2 Formation of through-silicon via (TSV) in silicon substrate 有权
公开(公告)号：US09385039B2
公开(公告)日：2016-07-05
申请号：US14559656
申请日：2014-12-03
申请人： Katsuyuki Sakuma
发明人： Katsuyuki Sakuma
IPC分类号： H01L23/48 , H01L21/44 , H01L21/768 , H01L23/14 , H01L25/065 , H01L23/498 , H01L21/48 , H01L23/31 , H01L23/00
CPC分类号： H01L21/76898 , H01L21/486 , H01L23/147 , H01L23/3128 , H01L23/481 , H01L23/49827 , H01L24/11 , H01L24/16 , H01L24/17 , H01L24/81 , H01L25/0657 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/131 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/171 , H01L2224/17181 , H01L2224/73204 , H01L2224/81815 , H01L2224/9202 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/00014 , H01L2924/01327 , H01L2924/10253 , H01L2924/15311 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： To form a through-silicon via (TSV) in a silicon substrate without using plating equipment or using sputtering equipment or small metal particles, and form an interlayer connection by stacking a plurality of such silicon substrates, a through hole of a silicon substrate is filled using molten solder itself. In detail, solid solder placed above the through hole of the silicon substrate is molten and the molten solder is guided to and filled in the internal space. A metal layer can be deposited on an internal surface of the through hole beforehand, and also an intermetallic compound (IMC) can be formed in a portion other than the metal layer.

3. 发明授权

US08914637B2 System for enabling digital signature auditing 有权
公开(公告)号：US08914637B2
公开(公告)日：2014-12-16
申请号：US13592809
申请日：2012-08-23
申请人： Michael Charles Osborne , Tamas Visegrady
发明人： Michael Charles Osborne , Tamas Visegrady
IPC分类号： G06F21/00 , H04L9/32
CPC分类号： H04L9/3247 , H04L2209/38
摘要： A computer method, computer system, and article for enabling digital signature auditing. The method includes the steps of: receiving at least one signature request issued by at least one application, forwarding a first data corresponding to the received at least one signature request to at least one signing entity for subsequent signature of the first data, storing an updated system state that is computed using a function of: i) a reference system state and ii) a second data corresponding to the received at least one signature request, where the reference system state and the updated system state attest to the at least one signature request, and repeating the above steps, using the updated system state as a new reference system state, where the steps of the method are executed at a server of a computerized system.

4. 发明授权

US08892892B2 System for enabling digital signature auditing 有权
标题翻译：启用数字签名审核的系统
公开(公告)号：US08892892B2
公开(公告)日：2014-11-18
申请号：US13420705
申请日：2012-03-15
申请人： Michael Charles Osborne , Tamas Visegrady
发明人： Michael Charles Osborne , Tamas Visegrady
IPC分类号： G06F21/00 , H04L9/32
CPC分类号： H04L9/3247 , H04L2209/38
摘要： A computer method, computer system, and article for enabling digital signature auditing. The method includes the steps of: receiving at least one signature request issued by at least one application, forwarding a first data corresponding to the received at least one signature request to at least one signing entity for subsequent signature of the first data, storing an updated system state that is computed using a function of: i) a reference system state and ii) a second data corresponding to the received at least one signature request, where the reference system state and the updated system state attest to the at least one signature request, and repeating the above steps, using the updated system state as a new reference system state, where the steps of the method are executed at a server of a computerized system.
摘要翻译：一种用于启用数字签名审核的计算机方法，计算机系统和文章。该方法包括以下步骤：接收由至少一个应用发出的至少一个签名请求，将对应于所接收的至少一个签名请求的第一数据转发给至少一个签名实体，以便随后签署第一数据，存储更新的使用以下功能计算的系统状态：i）参考系统状态，以及ii）对应于接收到的至少一个签名请求的第二数据，其中参考系统状态和更新的系统状态证明至少一个签名请求，并且重复上述步骤，使用更新的系统状态作为新的参考系统状态，其中该方法的步骤在计算机化系统的服务器处执行。

5. 发明授权

US08546069B2 Method for enhancing lithographic imaging of isolated and semi-isolated features 失效
标题翻译：用于增强隔离和半隔离特征的光刻成像的方法
公开(公告)号：US08546069B2
公开(公告)日：2013-10-01
申请号：US12354247
申请日：2009-01-15
申请人： Wu-Song Huang , Gregory R. McIntyre
发明人： Wu-Song Huang , Gregory R. McIntyre
IPC分类号： G03F7/40
CPC分类号： G03F7/2022 , G03F7/095 , G03F7/26
摘要： The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention.
摘要翻译：本发明涉及用于增强孤立和半隔离特征的光刻成像的光刻方法。在衬底上形成第一光致抗蚀剂的第一层。在第一层上形成第二光致抗蚀剂层。第二光致抗蚀剂包括含有吸收部分的聚合物。第二层通过第一图案化掩模曝光并显影以形成第一浮雕图像。第一浮雕图像和第一层通过第二图案掩模曝光。第一和第二图案化掩模中的一个包括密集图案，而另一个包括隔离或半隔离图案。去除第一层的第一浮雕图像和底部可溶区域以形成具有隔离或半隔离图案的第二浮雕图像。第二层也可以在本发明中曝光和烘烤时可漂白。

6. 发明授权

US09785896B2 Real-time prediction and correction of scheduled service bunching 有权
公开(公告)号：US09785896B2
公开(公告)日：2017-10-10
申请号：US13956029
申请日：2013-07-31
申请人： International Business Machines Corporation
发明人： Francesco Calabrese , Rahul Nair , Fabio Pinelli
IPC分类号： G06Q10/06 , G06Q50/30
CPC分类号： G06Q10/06311 , G06Q10/06312 , G06Q10/06315 , G06Q50/30
摘要： A method includes: a computer receiving historical data from at least one service vehicle; the computer receiving network definitions for the least one service vehicle; the computer receiving dynamic data from the at least one service vehicle; and the computer developing predictions and corrective actions to prevent service bunching, based upon the historical data, the network definitions, and the dynamic data.

7. 发明授权

US09356887B2 Controlling shared memory 有权
标题翻译：控制共享内存
公开(公告)号：US09356887B2
公开(公告)日：2016-05-31
申请号：US13599501
申请日：2012-08-30
申请人： Ying Chen , Yan Li , Qiming Teng , Huayong Wang
发明人： Ying Chen , Yan Li , Qiming Teng , Huayong Wang
IPC分类号： G06F15/167 , H04L12/879 , G06F9/54
CPC分类号： H04L49/901 , G06F9/544 , G06F15/167
摘要： In view of the characteristics of distributed applications, the present invention proposes a technical solution for applying a shared memory on an NIC comprising: a shared memory configured to provide shared storage space for a task of a distributed application, and a microcontroller. Furthermore, the present invention provides a computer device that includes the above-mentioned NIC, a method for controlling a read/write operation on a shared memory of a NIC, and a method for invoking the NIC. The use of the technical solution provided in the present invention bypasses the processing of network protocol stack, avoids the time delay introduced by the network protocol stack. The present invention does not need to perform TCP/IP encapsulation on the data packet, thus greatly saving additional packet header and packet tail overheads generated from the TCP/IP layer data encapsulation.
摘要翻译：鉴于分布式应用的特征，本发明提出了一种在NIC上应用共享存储器的技术方案，包括：配置为为分布式应用的任务提供共享存储空间的共享存储器和微控制器。此外，本发明提供了一种包括上述NIC的计算机设备，用于控制NIC的共享存储器上的读/写操作的方法和用于调用NIC的方法。使用本发明提供的技术方案绕过了网络协议栈的处理，避免了由网络协议栈引入的时延。本发明不需要在数据分组上执行TCP / IP封装，从而大大节省了从TCP / IP层数据封装产生的附加分组报头和分组尾部开销。

8. 发明授权

US09313398B2 Warning system for sub-optimal sensor settings 有权
标题翻译：用于次优传感器设置的警告系统
公开(公告)号：US09313398B2
公开(公告)日：2016-04-12
申请号：US14220422
申请日：2014-03-20
申请人： International Business Machines Corporation
发明人： Stefan Lehmann , Christopher Wade Ruhl
IPC分类号： G08B21/00 , H04N5/232
CPC分类号： G08B21/18 , G06F1/1686 , H04M1/72569 , H04N5/23216 , H04N5/23222 , H04N5/23245
摘要： A method includes a computing device receiving at least one sensor reading from at least one sensor on a user's device; the computing device determining at least one setting on the user's device based upon the received at least one sensor reading; the computing device detecting a change from the at least one sensor that could affect an optimal setting for the determined at least one setting; and notifying a user that the detected change has occurred.
摘要翻译：一种方法包括计算设备，其接收从用户设备上的至少一个传感器读取的至少一个传感器; 所述计算设备基于所接收的至少一个传感器读数确定所述用户设备上的至少一个设置; 所述计算设备检测可能影响所确定的至少一个设置的最佳设置的所述至少一个传感器的变化; 并通知用户检测到的改变已经发生。

9. 发明授权

US08972667B2 Exchanging data between memory controllers 有权
标题翻译：在内存控制器之间交换数据
公开(公告)号：US08972667B2
公开(公告)日：2015-03-03
申请号：US13534063
申请日：2012-06-27
申请人： Florian Alexander Auernhammer , Victoria Caparros Cabezas , Andreas Christian Doering , Patricia Maria Sagmeister
发明人： Florian Alexander Auernhammer , Victoria Caparros Cabezas , Andreas Christian Doering , Patricia Maria Sagmeister
IPC分类号： G06F12/00 , G06F12/08 , G06F12/16 , G06F13/16
CPC分类号： G06F13/16 , G06F13/1657
摘要： A device with an interconnect having a plurality of memory controllers for connecting the plurality of memory controllers. Each memory controller of the plurality of memory controllers is coupled to an allocated memory for storing data. Further, each memory controller of the plurality of memory controllers has one accelerator of a plurality of accelerators for mutually exchanging data over the interconnect.
摘要翻译：具有互连的设备，具有用于连接多个存储器控制器的多个存储器控制器。多个存储器控制器中的每个存储器控制器耦合到分配的用于存储数据的存储器。此外，多个存储器控制器的每个存储器控制器具有用于在互连上相互交换数据的多个加速器的一个加速器。

10. 发明授权

US08536650B2 Strained ultra-thin SOI transistor formed by replacement gate 有权
标题翻译：应变超薄SOI晶体管由替代栅极组成
公开(公告)号：US08536650B2
公开(公告)日：2013-09-17
申请号：US13020223
申请日：2011-02-03
申请人： Kangguo Cheng , Junedong Lee
发明人： Kangguo Cheng , Junedong Lee
IPC分类号： H01L27/12
CPC分类号： H01L29/78684 , H01L29/66545 , H01L29/66742 , H01L29/7848 , H01L29/78603 , H01L29/78621
摘要： A semiconductor structure is described. The structure includes a transistor formed in a semiconductor substrate, the semiconductor substrate having a semiconductor-on-insulator (SOI) layer; a channel associated with the transistor and formed on a first portion of the SOI layer; and a source/drain region associated with the transistor and formed in a second portion of the SOI layer and in a recess at each end of the channel, where the second portion of the SOI layer is substantially thicker than the first portion of the SOI layer. A method of fabricating the semiconductor structure is also described. The method includes forming a dummy gate in a semiconductor substrate; performing a SIMOX process to form a SOI layer such that a first portion of the SOI layer under the dummy gate is substantially thinner than a second portion of the SOI layer; forming a source/drain extension in the SOI layer; and recessing the source/drain extension for forming a source/drain region; epitaxially growing the second portion of the SOI layer; forming an insulating layer over the epitaxial growth; removing the dummy gate for forming a gate opening; and filling the gate opening with a gate dielectric material and a gate conductor material.
摘要翻译：描述半导体结构。该结构包括形成在半导体衬底中的晶体管，该半导体衬底具有绝缘体上半导体层（SOI）层; 与所述晶体管相关并形成在所述SOI层的第一部分上的沟道; 以及与所述晶体管相关并形成在所述SOI层的第二部分中以及在所述沟道的每个端部处的凹部中的源极/漏极区域，其中所述SOI层的所述第二部分基本上比所述SOI层的第一部分更厚。还描述了制造半导体结构的方法。该方法包括在半导体衬底中形成虚拟栅极; 执行SIMOX处理以形成SOI层，使得所述伪栅极之下的所述SOI层的第一部分实质上薄于所述SOI层的第二部分; 在SOI层中形成源/漏扩展; 并且凹入用于形成源极/漏极区域的源极/漏极延伸部分; 外延生长SOI层的第二部分; 在外延生长上形成绝缘层; 去除用于形成门开口的虚拟门; 以及用栅极电介质材料和栅极导体材料填充栅极开口。

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