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1. 发明授权

US09419625B2 Dynamic prescaling for performance counters 有权
公开(公告)号：US09419625B2
公开(公告)日：2016-08-16
申请号：US14472995
申请日：2014-08-29
申请人： International Business Machines Corporation
发明人： Prasanna Jayaraman , Charles F. Marino , Srinivas B. Purushotham , Srinivasan Ramani
IPC分类号： H03K21/40 , H03K21/02
CPC分类号： H03K21/023 , H03K21/40
摘要： A method of configuring a prescaling circuit in a performance counter circuit for a computer processing system can include receiving a first number of signaled events at a prescaling circuit configured to generate event counts for a performance counter circuit. The method can include generating event counts at a current event-count rate for the first number of signaled events and determining a detected event-count rate for the signaled events based on a rate at which the first number of signaled events are received at the prescaling circuit. The method can include determining that the detected event-count rate is greater than the current event-count rate. The method can include increasing the current event-count rate in response to determining that the detected event-count rate is greater than the current event-count rate.

2. 发明授权

US09401102B2 Sign including a plurality of symbol portions 有权
标题翻译：符号包括多个符号部分
公开(公告)号：US09401102B2
公开(公告)日：2016-07-26
申请号：US14600582
申请日：2015-01-20
申请人： KABUSHIKI KAISHA TOKAI-RIKA-DENKI-SEISAKUSHO
发明人： Taiki Misawa , Seiji Hayashi
IPC分类号： G09F7/00 , G09F7/16 , G09F21/04 , G09F7/14 , G09F7/18
CPC分类号： G09F7/16 , G09F7/14 , G09F21/04 , G09F2007/1856 , G09F2007/1865 , G09F2007/1882
摘要： A sign is provided capable of increasing strength. A sign includes plural symbol portions arrayed in an array direction. Blank regions with an enclosed shape, and blank regions with an opened shape opening in the array direction, are formed inside the symbol portions. Reinforcement portions are provided at the blank regions. The symbol portions are coupled together by coupling portions, and the coupling portions are provided such that an array width direction position of the coupling portions coincides with an array width direction position of the reinforcement portions.
摘要翻译：提供能够增加强度的标志。符号包括沿阵列方向排列的多个符号部分。具有封闭形状的空白区域和在排列方向上开口的打开形状的空白区域形成在符号部分的内部。增强部分设置在空白区域。符号部分通过联接部分耦合在一起，耦合部分被设置成使得耦合部分的阵列宽度方向位置与加强部分的阵列宽度方向位置重合。

3. 发明授权

US09397010B2 Structure and method of latchup robustness with placement of through wafer via within CMOS circuitry 有权
公开(公告)号：US09397010B2
公开(公告)日：2016-07-19
申请号：US14993243
申请日：2016-01-12
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Phillip F. Chapman , David S. Collins , Steven H. Voldman
IPC分类号： H01L21/8238 , H01L27/092 , H01L21/74
CPC分类号： H01L27/0921 , H01L21/743 , H01L21/76224 , H01L21/76898 , H01L21/823871 , H01L21/823878 , H01L21/823892 , H01L23/481 , H01L27/092 , H01L29/0649 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor structure includes: forming a trench in a back side of a substrate; depositing a dopant on surfaces of the trench; forming a shallow trench isolation (STI) structure in a top side of the substrate opposite the trench; forming a deep well in the substrate; out-diffusing the dopant into the deep well and the substrate; forming an N-well and a P-well in the substrate; and filling the trench with a conductive material.

4. 发明授权

US09379253B1 Symmetric tunnel field effect transistor 有权
标题翻译：对称隧道场效应晶体管
公开(公告)号：US09379253B1
公开(公告)日：2016-06-28
申请号：US14837785
申请日：2015-08-27
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Mohit Bajaj , Suresh Gundapaneni , Aniruddha Konar , Narasimha R. Mavilla , Kota V. R. M. Murali , Edward J. Nowak
IPC分类号： H01L29/786 , H01L29/66 , H01L29/267 , H01L29/08 , H01L29/78 , H01L21/02
CPC分类号： H01L29/41725 , H01L21/02414 , H01L21/02483 , H01L21/02565 , H01L21/02581 , H01L21/3115 , H01L21/8232 , H01L21/823418 , H01L29/0653 , H01L29/083 , H01L29/0834 , H01L29/0847 , H01L29/161 , H01L29/205 , H01L29/24 , H01L29/267 , H01L29/66795 , H01L29/66977 , H01L29/7391 , H01L29/772 , H01L29/78 , H01L29/785 , H01L29/78681 , H01L29/7869 , H01L29/78693
摘要： The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.
摘要翻译：本公开涉及半导体结构，更具体地，涉及对称隧道场效应晶体管及其制造方法。该结构包括包括源极区和漏极区的栅结构，二者都包括掺杂的VO2区。

5. 发明授权

US09378291B2 System and method for preferred services in nomadic environments 有权
标题翻译：游牧环境中优先服务的系统和方法
公开(公告)号：US09378291B2
公开(公告)日：2016-06-28
申请号：US14217836
申请日：2014-03-18
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Kumar Mani , Purushothaman K. Narayanan , Hema Venkata
IPC分类号： G06F17/30 , G06F7/00
CPC分类号： G06F17/3087 , G06F17/30958
摘要： A method of locating preferred services includes searching an augmented spatial index, which is based on a user's determined preferred services. Additionally, the method includes indicating a location of a currently-sought preferred service.
摘要翻译：定位优选服务的方法包括搜索基于用户确定的优选服务的增强空间索引。此外，该方法包括指示当前寻求的优选服务的位置。

6. 发明授权

US09365780B2 Cold process for removal of sulfur in straight run diesel by ozone and tert-butyl hydroperoxide 有权
标题翻译：通过臭氧和叔丁基过氧化氢除去直馏柴油中的硫的冷加工过程
公开(公告)号：US09365780B2
公开(公告)日：2016-06-14
申请号：US14183821
申请日：2014-02-19
申请人： King Abdulaziz City for Science and Technology
发明人： Ahmed Ali Basfar , Yasser S. Soliman
IPC分类号： C10G27/14 , C10G27/04 , C10G53/14 , C10G53/02
CPC分类号： C10G27/14 , C10G27/04 , C10G53/14 , C10G2300/202
摘要： A method and process to remove sulfur compounds from a real fuel product of straight-run diesel (SRD) by the action of ozone bubbling and tert-butyl hydroperoxide (t-BUOOH) under normal laboratory conditions is disclosed. Slight desulfurization is taken place after ozone bubbling process which may be assigned to a removal of sulfur compounds in a gaseous form (SOx). Most of the organically bound sulfur and/or elemental sulfur and hydrogen sulfide still exist in the ozonized samples. Sulfur removal from SRD samples was achieved by combining ozone bubbling with extraction by using different solvents to remove the oxidized sulfur compound (polar) from ozonized samples. This method provides a considerable level of total sulfur reduction where the reduction of sulfur reaches 93%.
摘要翻译：公开了在正常实验室条件下通过臭氧起泡和叔丁基过氧化氢（t-BUOOH）的作用从直馏柴油（SRD）的实际燃料产物中除去硫化合物的方法和方法。在臭氧起泡过程之后发生轻微的脱硫，这可以被分配为以气态形式除去硫化合物（SOx）。大多数有机结合的硫和/或元素硫和硫化氢仍然存在于臭氧化样品中。通过使用不同的溶剂将臭氧发泡与萃取相结合，从臭氧化样品中除去氧化的硫化合物（极性），从而实现SRD样品的脱硫。这种方法提供了相当程度的总硫减少，其中硫的还原达到93％。

7. 发明授权

US09364925B2 Assembly of electronic and optical devices 有权
标题翻译：电子和光学装置的组装
公开(公告)号：US09364925B2
公开(公告)日：2016-06-14
申请号：US13459460
申请日：2012-04-30
申请人： Tymon Barwicz , Bing Dang
发明人： Tymon Barwicz , Bing Dang
IPC分类号： B25B27/14 , B23P11/00 , B25B11/02 , H05K13/04
CPC分类号： B23P11/00 , B25B11/02 , H05K13/0404 , H05K13/0408 , H05K13/0409 , Y10T29/49126 , Y10T29/49133 , Y10T29/49826 , Y10T29/49895 , Y10T29/49901 , Y10T29/53174 , Y10T29/53191 , Y10T29/53974
摘要： An assembly tool apparatus includes a manipulator having a range of motion defined by a plane and an axis that is substantially normal to the plane, a jig having an assembly surface operative to move from a first orientation relative to the axis to a second orientation relative to the axis, a first tool tip operative to engage with and be positioned by the manipulator, and a second tool tip operative to engage with and be positioned by the manipulator.
摘要翻译：装配工具装置包括具有由平面限定的运动范围和基本上垂直于该平面的轴线的运动范围的操纵器，具有可相对于轴线从第一方向相对于轴线移动到第二取向的组装表面的夹具所述轴线，操作成与所述操纵器接合并由所述操纵器定位的第一工具尖端以及与所述操纵器接合并由所述操纵器定位的第二工具尖端。

8. 发明授权

US09359164B2 Mailpiece container for stacking mixed mail and method for stacking mail therein 有权
公开(公告)号：US09359164B2
公开(公告)日：2016-06-07
申请号：US12390053
申请日：2009-02-20
申请人： Denis J. Stemmle
发明人： Denis J. Stemmle
IPC分类号： B65D21/032 , B65H31/30 , B07C3/00 , B65H29/00 , B65H31/10 , B65H31/22 , B65H31/34
CPC分类号： B65H31/3018 , B07C3/008 , B65H29/003 , B65H31/10 , B65H31/22 , B65H31/34 , B65H2301/323 , B65H2301/4212 , B65H2301/422548 , B65H2301/422615 , B65H2405/55 , B65H2801/78
摘要： A system is provided for stacking mail having an escort assembly for handling each mailpiece. The system comprises a containment device, a transport mechanism and a detachment mechanism. The containment device includes a base, vertical walls extending from the base and an open end for accepting the mailpieces therein. The containment device, furthermore, has a slot formed in at least one of the vertical walls thereof. The transport mechanism includes first and second transport segment, the first transport segment conveying escort assemblies and respective mailpieces over an open end of the containment device and the second transport segment lowering the escort assemblies and respective mailpieces into the open end of the containment device. The transport mechanism furthermore aligns the edges of the mailpieces along one of the vertical walls of the containment device and positions the escort assembly through the slot of the containment device. The detachment mechanism is operative to release the mailpieces from the respective escort assembly and move the escort assemblies through the slot of the containment device.

9. 发明授权

US09356014B2 High-voltage metal-insulator-semiconductor field effect transistor structures 有权
标题翻译：高压金属绝缘体 - 半导体场效应晶体管结构
公开(公告)号：US09356014B2
公开(公告)日：2016-05-31
申请号：US14522652
申请日：2014-10-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： William F. Clark, Jr. , Qizhi Liu , John J. Pekarik , Yun Shi , Yanli Zhang
IPC分类号： H01L27/06 , H01L21/8249 , H01L21/8234 , H01L29/04 , H01L27/092 , H01L29/161 , H01L29/45 , H01L29/735 , H01L29/40 , H01L27/088 , H01L29/78 , H01L29/66 , H01L29/73
CPC分类号： H01L27/0623 , H01L21/823418 , H01L21/8249 , H01L27/088 , H01L27/0922 , H01L29/04 , H01L29/161 , H01L29/402 , H01L29/45 , H01L29/66659 , H01L29/7302 , H01L29/735 , H01L29/78 , H01L29/7817 , H01L29/7835
摘要： Semiconductor structures and methods of manufacture are disclosed herein. Specifically, disclosed herein are methods of manufacturing a high-voltage metal-oxide-semiconductor field-effect transistor and respective structures. A method includes forming a field-effect transistor (FET) on a substrate in a FET region, forming a high-voltage FET (HVFET) on a dielectric stack over a over lightly-doped diffusion (LDD) drain in a HVFET region, and forming an NPN on the substrate in an NPN region.
摘要翻译：本文公开了半导体结构和制造方法。具体地，本文公开了制造高压金属氧化物半导体场效应晶体管和各种结构的方法。一种方法包括在FET区域的衬底上形成场效应晶体管（FET），在HVFET区域中的过掺杂掺杂扩散（LDD）漏极上的介质堆叠上形成高电压FET（HVFET），以及在NPN区域的基板上形成NPN。

10. 发明授权

US09352247B2 Method and device for distilling or thickening fluids 有权
标题翻译：用于蒸馏或增稠液体的方法和装置
公开(公告)号：US09352247B2
公开(公告)日：2016-05-31
申请号：US13768533
申请日：2013-02-15
申请人： PLAZMATRONIKA NT Sp. z o.o.
发明人： Robert Apiecionek , Tomasz Cioska
IPC分类号： B01D1/22 , C02F1/04 , C02F1/30 , B01D3/00 , B01D1/00 , B01D19/00 , H05B6/80
CPC分类号： B01D3/008 , B01D1/0017 , B01D1/0029 , B01D1/22 , B01D19/0089 , C02F1/04 , C02F1/30 , H05B6/802
摘要： A device (100) for distilling or thickening fluids, having a chamber (102), an electromagnetic radiation generator (104) and a waveguide (106) connecting the electromagnetic radiation generator (104) with the interior of the chamber (102). The device (100) has a channel (108) located below the end (110) of the waveguide (106), the channel being adapted for transporting the fluid. One end of the channel (108) is the inlet (112) and the other end of the channel (108) is the outlet (114) for the fluid, the channel being shaped so as to prolong the dwell time of the fluid in the chamber (102). A method for distilling or thickening fluids based on passing the fluid through a chamber (102) within which the fluid is affected by electromagnetic radiation generated by an electromagnetic radiation generator (104), and the fluid flows through the chamber within a channel (108) located below the end (110) of a waveguide (106) transmitting the electromagnetic radiation from the generator (104), the channel (108) being shaped so as to prolong the dwell time of the fluid within the chamber (102).
摘要翻译：一种用于蒸馏或增稠流体的装置（100），其具有将电磁辐射发生器（104）与室（102）的内部连接的室（102），电磁辐射发生器（104）和波导（106）。设备（100）具有位于波导（106）的端部（110）下方的通道（108），该通道适于输送流体。通道（108）的一端是入口（112），并且通道（108）的另一端是用于流体的出口（114），通道被成形以便延长流体在该流体中的停留时间室（102）。一种用于使流体通过其中流体受电磁辐射发生器（104）产生的电磁辐射影响的腔室（102）的蒸馏或增稠流体的方法，并且流体在通道（108）内流过腔室，位于传输来自发生器（104）的电磁辐射的波导（106）的端部（110）下方，通道（108）成形为延长流体在腔室（102）内的停留时间。

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