专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10854560B2 Semiconductor device and semiconductor device manufacturing method 有权
公开(公告)号：US10854560B2
公开(公告)日：2020-12-01
申请号：US16502803
申请日：2019-07-03
申请人： AOI Electronics Co., Ltd. , Mitsubishi Electric Corporation
发明人： Shuichi Sawamoto , Koji Iwabu , Katsuhiro Takao , Akihito Hirai , Joichi Saito
IPC分类号： H01L23/552 , H01L23/31 , H01L21/56 , H01L23/00 , H01L21/48 , H01L23/495
摘要： A semiconductor device includes: an island that is formed by a metallic layer including a single metallic layer or a plurality of different metallic layers; a semiconductor chip provided upon an upper surface of the island, and having a pair of side portions mutually opposing each other; a plurality of signal terminals disposed at an external periphery of at least the pair of side portions of the semiconductor chip, and formed by the metallic layer; a grounding terminal disposed at an external periphery of the plurality of signal terminals, and formed by the metallic layer; electrically conductive connection members that are connected between each of a plurality of electrodes of the semiconductor chip and each of the plurality of signal terminals; sealing resin that seals the island, the semiconductor chip, the electrically conductive connection members, the plurality of signal terminals, and the grounding terminal, so that a lower surface of the island, lower surfaces of the plurality of signal terminals, and a lower surface of the grounding terminal are exposed to the exterior; and a metallic shielding layer that covers over an outer peripheral side surface and an upper surface of the sealing resin, and a portion of the grounding terminal.

2. 发明申请

US20170336263A1 REFLECTED LIGHT DETECTING DEVICE AND REFLECTED LIGHT DETECTING METHOD 审中-公开
公开(公告)号：US20170336263A1
公开(公告)日：2017-11-23
申请号：US15597544
申请日：2017-05-17
申请人： AOI ELECTRONICS CO., Ltd. , NATIONAL UNIVERSITY CORPORATION KAGAWA UNIVERSITY
发明人： Hiroki HAYASHI , Ichiro ISHIMARU
IPC分类号： G01J3/447 , G01J3/45 , G01J3/02
CPC分类号： G01J3/447 , G01J3/0224 , G01J3/0289 , G01J3/45 , G01J3/50 , G01N21/21 , G01N21/255 , G01N21/55 , G01N2021/217 , G01N2021/559 , G01N2201/0642
摘要： Reflected light detecting device and method with surface reflected light components collectively be extracted/removed when detecting reflected light arising in casting light onto target-object range having non-planar surface. The device includes: a first illuminating device causing first-measurement light in predetermined polarization direction to enter target-object first region from first direction; polarization optical system position part of first-surface reflected light enters the polarization optical system, the first-surface reflected light being the first-measurement in the first region surface; a second illuminating device causing second-measurement light in the same first-measurement light polarization direction to enter second region from second direction, the second region being on the target-object surface, different from the first region; adjusting direction of the second-measurement light optical axis so part of second-surface reflected light enters the polarization optical system, the second-surface reflected light being the second-measurement in second region surface; and detecting light having passed through the polarization optical system.

3. 发明授权

US09812423B2 Semiconductor device having wire formed with loop portion and method for producing the semiconductor device 有权
公开(公告)号：US09812423B2
公开(公告)日：2017-11-07
申请号：US15039083
申请日：2014-11-19
申请人： AOI Electronics Co., Ltd.
发明人： Naoki Fukue
IPC分类号： H01L31/02 , H01L23/00 , H01L23/31 , H01L21/56 , H01L33/62
CPC分类号： H01L24/85 , H01L21/563 , H01L23/3121 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L31/02 , H01L33/62 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/4809 , H01L2224/48227 , H01L2224/48465 , H01L2224/49175 , H01L2224/73265 , H01L2224/78301 , H01L2224/85 , H01L2224/85181 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2224/05599 , H01L2224/85399
摘要： A semiconductor device includes: a connection terminal; a semiconductor chip having an electrode pad on one surface; a wire that connects the connection terminal and the electrode pad of the semiconductor chip; and transparent resin that covers the one surface of the semiconductor chip, and that seals the connection terminal and the wire, wherein: the wire includes a first bonded portion that is joined to the electrode pad, a second bonded portion that is joined to the connection terminal, and a loop portion that is formed so as to be continuous with the first bonded portion and has a turned back portion on a side opposite to the second bonded portion; and predetermined clearances are provided between the loop portion and the first bonded portion, and between the loop portion and other portions of the wire.

4. 发明授权

US09448102B2 Photoreception device with an insulating resin mass, and method for producing photoreception device 有权
标题翻译：具有绝缘树脂质量的感光装置和用于产生光接收装置的方法
公开(公告)号：US09448102B2
公开(公告)日：2016-09-20
申请号：US14355065
申请日：2012-10-31
申请人： AOI Electronics Co., Ltd.
发明人： Takahiro Ebisui
IPC分类号： G01J1/04 , H01L31/0203 , H01L23/31 , G01J1/02
CPC分类号： G01J1/0403 , G01J2001/0276 , H01L23/3121 , H01L31/0203 , H01L2224/48091 , H01L2224/48465 , H01L2224/8592 , Y10T29/49208 , H01L2924/00014 , H01L2924/00
摘要： A photoreception device includes: a substrate; a photoreceptor element including a photoreceptor portion upon an upper surface thereof and a lower surface thereof is mounted upon the substrate; and an insulating resin mass that contains a flat upper surface and an opening that exposes the photoreceptor portion of the photoreceptor element, that is formed upon the substrate to be thicker than thickness of the photoreceptor element, and that adheres closely against side surfaces of the photoreceptor element, the side surfaces surrounding the photoreceptor element. The insulating resin mass contains a step portion that is provided to a height between the flat upper surface thereof and the upper surface of the photoreceptor portion; and the step portion extends parallel to at least one pair of mutually opposed side surfaces of the photoreceptor element, at a periphery of the opening.
摘要翻译：光接收器件包括：衬底; 将包括其上表面上的感光体部分和其下表面的感光体元件安装在基板上; 以及绝缘树脂块，其包含平坦的上表面和露出感光体元件的感光体部分的开口，所述感光体部件形成在所述基板上，比所述感光体元件的厚度更厚，并且紧贴在所述感光体的侧表面元件，围绕感光体元件的侧表面。绝缘树脂块包含设置在其平坦上表面和感光体部分的上表面之间的高度的台阶部分; 并且台阶部分在开口的周边平行于感光体元件的至少一对相互相对的侧表面延伸。

5. 发明申请

US20150070941A1 Electrostatic Induction Conversion Device and DC-DC Converter 有权
标题翻译：静电感应转换器和DC-DC转换器
公开(公告)号：US20150070941A1
公开(公告)日：2015-03-12
申请号：US14386650
申请日：2013-08-26
申请人： AOI Electronics, Co., Ltd. , National University Corporation Shizuoka University
发明人： Masato Suzuki , Hiroki Hayashi , Gen Hashiguchi , Tatsuhiko Sugiyama
IPC分类号： H02N1/08 , H02M3/34 , H02N1/00
CPC分类号： H02N1/08 , H02M3/34 , H02N1/006
摘要： An electrostatic induction conversion device includes: an input-side electrostatic actuator that includes a first fixed electrode and a first movable electrode facing the first fixed electrode; and an output-side electrostatic actuator that includes a second movable electrode linked to the first movable electrode via a link mechanism member, which increases or decreases a displacement quantity representing an extent of displacement occurring at the first movable electrode, and a second fixed electrode facing the second movable electrode, wherein: a permanently charged layer is deposited on an electrode surface either on a movable electrode side or on a fixed electrode side, at the input-side electrostatic actuator and the output-side electrostatic actuator.
摘要翻译：一种静电感应转换装置，包括：输入侧静电致动器，其包括第一固定电极和面向第一固定电极的第一可动电极; 以及输出侧静电致动器，其包括经由连杆机构构件与第一可动电极连接的第二可动电极，其增加或减少表示在第一可动电极处发生的位移程度的位移量，以及面对所述第二可动电极，其中：在所述输入侧静电致动器和所述输出侧静电致动器上，在可动电极侧或固定电极侧的电极表面上沉积永久带电层。

6. 发明申请

US20210217719A1 Method of Manufacturing Semiconductor Device 有权
公开(公告)号：US20210217719A1
公开(公告)日：2021-07-15
申请号：US16967480
申请日：2019-01-30
申请人： AOI Electronics Co., Ltd.
发明人： Ichiro KONO
IPC分类号： H01L23/00 , H01L21/78 , H01L21/683
摘要： A method of manufacturing a semiconductor device, includes: preparing a support substrate having a peeling layer formed on a main surface side; partially forming a wiring layer above the peeling layer; arranging a semiconductor chip on the support substrate so that a pad of the semiconductor chip is electrically connected to the wiring layer; forming an encapsulating layer that encapsulates at least a part of the wiring layer and the semiconductor chip and is in contact with the peeling layer or a layer above the peeling layer so as to form an intermediate laminated body including the semiconductor chip, the wiring layer, and the encapsulating layer on the support substrate; cutting a peripheral portion of the support substrate after forming the intermediate laminated body; and mechanically peeling the intermediate laminated body from the support substrate with the peripheral portion cut away, with the peeling layer being as a boundary.

7. 发明申请

US20180197822A1 Semiconductor Device and Semiconductor Device Manufacturing Method 审中-公开
公开(公告)号：US20180197822A1
公开(公告)日：2018-07-12
申请号：US15742071
申请日：2016-05-19
申请人： AOI ELECTRONICS CO., LTD. , MITSUBISHI ELECTRIC CORPORATION
发明人： Shuichi SAWAMOTO , Koji IWABU , Katsuhiro TAKAO , Akihito HIRAI , Joichi SAITO
IPC分类号： H01L23/552 , H01L23/31 , H01L21/56 , H01L23/00 , H01L23/495
CPC分类号： H01L23/552 , H01L21/4842 , H01L21/561 , H01L21/568 , H01L23/3121 , H01L23/49541 , H01L23/49548 , H01L24/97 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83005 , H01L2224/85005 , H01L2224/97 , H01L2924/00012 , H01L2924/00014 , H01L2224/83 , H01L2224/85
摘要： A semiconductor device includes: an island that is formed by a metallic layer including a single metallic layer or a plurality of different metallic layers; a semiconductor chip provided upon an upper surface of the island, and having a pair of side portions mutually opposing each other; a plurality of signal terminals disposed at an external periphery of at least the pair of side portions of the semiconductor chip, and formed by the metallic layer; a grounding terminal disposed at an external periphery of the plurality of signal terminals, and formed by the metallic layer; electrically conductive connection members that are connected between each of a plurality of electrodes of the semiconductor chip and each of the plurality of signal terminals; sealing resin that seals the island, the semiconductor chip, the electrically conductive connection members, the plurality of signal terminals, and the grounding terminal, so that a lower surface of the island, lower surfaces of the plurality of signal terminals, and a lower surface of the grounding terminal are exposed to the exterior; and a metallic shielding layer that covers over an outer peripheral side surface and an supper surface of the sealing resin, and a portion of the grounding terminal.

8. 发明授权

US09570407B2 Method for manufacturing semiconductor device and semiconductor device 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US09570407B2
公开(公告)日：2017-02-14
申请号：US14786777
申请日：2014-03-28
申请人： AOI Electronics Co., Ltd.
发明人： Takahiro Ebisui , Masako Furuichi , Shuji Inoue
IPC分类号： H01L23/48 , H01L23/52 , H01L23/00 , H01L23/10 , H01L23/31 , H01L21/50 , H01L21/56 , H01L21/48 , H01L21/52 , H01L21/78 , H01L23/29 , H01L23/498
CPC分类号： H01L23/562 , H01L21/4875 , H01L21/50 , H01L21/52 , H01L21/56 , H01L21/561 , H01L21/78 , H01L23/10 , H01L23/29 , H01L23/3185 , H01L23/49811 , H01L24/97 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/8592 , H01L2924/12041 , H01L2924/16151 , H01L2924/16195 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes: a fixing step in which semiconductor chips are mounted on and fixed to predetermined positions on an upper surface of a single starting substrate to form individual substrates; a connection step in which electrodes of the semiconductor chips and of the starting substrate are connected by wires; a sealing step in which on the upper surface of the starting substrate, the resin is potted among the semiconductor chips to seal an entire lateral circumference of each of the semiconductor chip; a bonding step in which a single starting protective cover to form individual protective covers is bonded to a surface of the resin so as to extend the semiconductor chips; and a cutting step in which an assembly of the semiconductor devices formed by bonding the starting protective cover to the starting substrate via the resin is cut to the semiconductor devices.
摘要翻译：一种半导体器件的制造方法，其特征在于，包括：固定步骤，其中将半导体芯片安装在单个起始衬底的上表面上并固定到预定位置上以形成单个衬底; 连接步骤，其中半导体芯片和起始衬底的电极通过电线连接; 密封步骤，其中在所述起始衬底的上表面上，所述树脂在所述半导体芯片之间封装以密封所述半导体芯片中的每一个的整个横向周边; 结合步骤，其中形成单个保护罩的单个启动保护盖结合到树脂的表面以延伸半导体芯片; 以及切割步骤，其中通过将起始保护盖经由树脂接合到起始衬底而形成的半导体器件的组件被切割到半导体器件。

9. 发明申请

US20160118912A1 Electrostatic Induction Type Electromechanical Transducer and Nano Tweezers 审中-公开
标题翻译：静电感应式机电传感器和纳米镊子
公开(公告)号：US20160118912A1
公开(公告)日：2016-04-28
申请号：US14892908
申请日：2014-01-28
申请人： AOI Electronics Co., Ltd.
发明人： Hiroki HAYASHI
IPC分类号： H02N1/08
CPC分类号： H02N1/08 , B81C99/002 , H02N1/008
摘要： An electrostatic induced type electromechanical transducer includes: a first electrode having a plurality of first comb tooth electrodes; a second electrode having a plurality of second comb tooth electrodes arranged meshed with the plurality of first comb tooth electrodes through respective gaps; a plurality of dielectric members at an electric field formation space between the first comb tooth electrodes and the second comb tooth electrodes and made of a material having a relative dielectric constant greater than 1; and a base that fixedly supports or movably supports the first electrode, the second electrode, and the dielectric members, wherein the first electrode and/or the second electrode, and the dielectric members are capable of being relatively displaced from each other.
摘要翻译：静电感应型机电换能器包括：具有多个第一梳齿电极的第一电极; 具有多个第二梳齿电极的第二电极，所述第二梳齿电极通过各个间隙与所述多个第一梳齿电极啮合; 在第一梳齿电极和第二梳齿电极之间的电场形成空间处的多个电介质构件，并且由相对介电常数大于1的材料制成; 以及固定地支撑或可移动地支撑第一电极，第二电极和电介质构件的基座，其中第一电极和/或第二电极以及电介质构件能够彼此相对移位。

10. 发明申请

US20160086895A1 Method for Manufacturing Semiconductor Device and Semiconductor Device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20160086895A1
公开(公告)日：2016-03-24
申请号：US14786777
申请日：2014-03-28
申请人： AOI ELECTRONICS CO., LTD.
发明人： Takahiro EBISUI , Masako FURUICHI , Shuji INOUE
IPC分类号： H01L23/00 , H01L23/498 , H01L21/56 , H01L21/48 , H01L21/52 , H01L23/29 , H01L21/78
CPC分类号： H01L23/562 , H01L21/4875 , H01L21/50 , H01L21/52 , H01L21/56 , H01L21/561 , H01L21/78 , H01L23/10 , H01L23/29 , H01L23/3185 , H01L23/49811 , H01L24/97 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/8592 , H01L2924/12041 , H01L2924/16151 , H01L2924/16195 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes: a fixing step in which semiconductor chips are mounted on and fixed to predetermined positions on an upper surface of a single starting substrate to form individual substrates; a connection step in which electrodes of the semiconductor chips and of the starting substrate are connected by wires; a sealing step in which on the upper surface of the starting substrate, the resin is potted among the semiconductor chips to seal an entire lateral circumference of each of the semiconductor chip; a bonding step in which a single starting protective cover to form individual protective covers is bonded to a surface of the resin so as to extend the semiconductor chips; and a cutting step in which an assembly of the semiconductor devices formed by bonding the starting protective cover to the starting substrate via the resin is cut to the semiconductor devices.
摘要翻译：一种半导体器件的制造方法，其特征在于，包括：固定步骤，其中将半导体芯片安装在单个起始衬底的上表面上并固定到预定位置上以形成单个衬底; 连接步骤，其中半导体芯片和起始衬底的电极通过电线连接; 密封步骤，其中在所述起始衬底的上表面上，所述树脂在所述半导体芯片之间封装以密封所述半导体芯片中的每一个的整个横向周边; 结合步骤，其中形成单个保护罩的单个启动保护盖结合到树脂的表面以延伸半导体芯片; 以及切割步骤，其中通过将起始保护盖经由树脂接合到起始衬底而形成的半导体器件的组件被切割到半导体器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式