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1. 发明授权

US09153746B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09153746B2
公开(公告)日：2015-10-06
申请号：US13601568
申请日：2012-08-31
申请人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
发明人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
IPC分类号： H01L33/52 , H01L33/00 , H01L33/38 , H01L21/50
CPC分类号： H01L33/486 , H01L33/387 , H01L33/62
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.
摘要翻译：根据实施例，半导体发光器件包括具有发光层的半导体层。该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。

2. 发明授权

US09099619B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09099619B2
公开(公告)日：2015-08-04
申请号：US13419684
申请日：2012-03-14
申请人： Hiroshi Koizumi , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
发明人： Hiroshi Koizumi , Naoaki Sakurai , Yoshiaki Sugizaki , Yasuhide Okada , Tomomichi Naka , Masahiro Uekita , Akihiro Kojima , Yosuke Akimoto
IPC分类号： H01L29/20 , H01L21/00 , H01L33/50 , H01L33/00
CPC分类号： H01L33/508 , H01L33/0079 , H01L33/504 , H01L33/505 , H01L2933/0016 , H01L2933/0041
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.
摘要翻译：根据一个实施例，半导体发光器件包括发光部分和波长转换部分。发光部被配置为发光。波长转换部设置在发光部的一个主表面侧。波长转换部分包含磷光体。波长转换部分具有基于从发光部分发射的光的波长分布的荧光体的量的分布。

3. 发明授权

US09084961B2 Gas-liquid contacting plate, gas-liquid contacting laminated block body, gas-liquid contacting laminated structure and gas purification device 有权
标题翻译：气液接触板，气液接触层叠块体，气液接触叠层结构和气体净化装置
公开(公告)号：US09084961B2
公开(公告)日：2015-07-21
申请号：US13813359
申请日：2011-12-08
申请人： Tatsuya Tsujiuchi , Hiromitsu Nagayasu , Hiroshi Tanaka , Takuya Hirata , Keiji Fujikawa , Ryuji Yoshiyama , Yuichiro Sato , Toyoshi Nakagawa , Tsuyoshi Oishi , Motomichi Ochiai , Kei Shioya , Shunji Ichikawa , Akihiro Kojima
发明人： Tatsuya Tsujiuchi , Hiromitsu Nagayasu , Hiroshi Tanaka , Takuya Hirata , Keiji Fujikawa , Ryuji Yoshiyama , Yuichiro Sato , Toyoshi Nakagawa , Tsuyoshi Oishi , Motomichi Ochiai , Kei Shioya , Shunji Ichikawa , Akihiro Kojima
IPC分类号： B01D53/18 , B01F3/04 , B01D53/14 , B01J19/32 , B01D3/28
CPC分类号： B01D53/18 , B01D3/28 , B01D53/1406 , B01D53/185 , B01D2257/204 , B01D2257/406 , B01D2257/504 , B01F3/04078 , B01J19/32 , B01J2219/32206 , B01J2219/32227 , B01J2219/32241 , B01J2219/32244 , B01J2219/32251 , B01J2219/32258 , B01J2219/32262 , B01J2219/32272 , B01J2219/32483 , B01J2219/3325
摘要： A gas-liquid contacting plate of the present invention in which a treatment liquid flows from an upper side to a lower side direction of a substrate and a part of gas being in contact with the treatment liquid is absorbed into the treatment liquid, includes a downward protruding saw teeth-shaped portion in which a lower end side of the substrate has pitches at predetermined gaps. Further, a pore group for liquid dispersion having a predetermined gap is provided in a plurality of lines, in the substrate. An arrangement thereof is a zigzag arrangement.
摘要翻译：本发明的气液接触板，其中处理液体从基板的上侧向下侧流动，并且与处理液接触的一部分气体被吸收到处理液中，包括向下突出的锯齿形部分，其中衬底的下端侧具有预定间隙的间距。此外，在基板中以多条线设置具有预定间隙的分散液孔组。其布置是锯齿形布置。

4. 发明授权

US08957402B2 Semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08957402B2
公开(公告)日：2015-02-17
申请号：US13597096
申请日：2012-08-28
申请人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto
发明人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto
IPC分类号： H01L29/06
CPC分类号： H01L33/12 , H01L33/0025 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/54
摘要： According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一氮化物半导体层，氮化物半导体发光层，第二氮化物半导体层，p侧电极和n侧电极。氮化物半导体发光层设置在第一氮化物半导体层的第二面的p侧区域上。第二氮化物半导体层设置在氮化物半导体发光层上。 p侧电极设置在第二氮化物半导体层上。 n侧电极设置在第一氮化物半导体层的第二面的n侧区域上。氮化物半导体发光层在第一氮化物半导体层的一侧具有第一凹凸面，在第二氮化物半导体层的侧面具有第二凹凸面。

5. 发明授权

US08907357B2 Light emitting module 有权
标题翻译：发光模块
公开(公告)号：US08907357B2
公开(公告)日：2014-12-09
申请号：US13597055
申请日：2012-08-28
申请人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
发明人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
IPC分类号： H01L29/18
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/156 , H01L33/486 , H01L33/507 , H01L33/508 , H01L33/52 , H01L33/62 , H01L2224/16 , H01L2933/0091
摘要： According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal.
摘要翻译：根据一个实施例，发光模块包括安装基板，多个发光芯片，透明层和荧光体层。透明层设置在安装面上的多个发光芯片和发光芯片之间。透明层具有至少分散在多个发光芯片之间的第一透明体中的第一透明体和散射剂。散射剂具有与第一透明体的折射率不同的折射率。荧光体层设置在透明层上。发光芯片包括半导体层，p侧电极，n侧电极，p侧外部端子和n侧外部端子。

6. 发明授权

US08614455B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08614455B2
公开(公告)日：2013-12-24
申请号：US13424687
申请日：2012-03-20
申请人： Susumu Obata , Kazuhito Higuchi , Hideo Nishiuchi , Akiya Kimura , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
发明人： Susumu Obata , Kazuhito Higuchi , Hideo Nishiuchi , Akiya Kimura , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/486 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.
摘要翻译：根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。层叠体包括第一和第二半导体层和发光层。第一和第二电极分别连接到第一和第二半导体层。第一和第二互连分别连接到第一和第二电极。第一和第二支柱分别连接到第一和第二互连。第一绝缘层设置在互连和支柱上。第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

7. 发明授权

US08610163B2 Method for manufacturing semiconductor light emitting device 有权
公开(公告)号：US08610163B2
公开(公告)日：2013-12-17
申请号：US13406840
申请日：2012-02-28
申请人： Hiroshi Hamasaki , Akihiro Kojima , Yoshiaki Sugizaki
发明人： Hiroshi Hamasaki , Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/36
CPC分类号： H01L33/62 , H01L33/0008 , H01L33/0016 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/56 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , Y10S438/94
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.

8. 发明申请

US20130285064A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130285064A1
公开(公告)日：2013-10-31
申请号：US13598504
申请日：2012-08-29
申请人： Akihiro KOJIMA , Hideto FURUYAMA , Miyoko SHIMADA , Yosuke AKIMOTO , Hideyuki TOMIZAWA , Yoshiaki SUGIZAKI
发明人： Akihiro KOJIMA , Hideto FURUYAMA , Miyoko SHIMADA , Yosuke AKIMOTO , Hideyuki TOMIZAWA , Yoshiaki SUGIZAKI
IPC分类号： H01L33/44 , H01L33/32
CPC分类号： H01L33/44 , H01L33/486 , H01L33/50
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极，荧光体层和透明膜。半导体层具有第一面，与第一面相反的第二面和发光层。 p侧电极设置在包括发光层的区域的第二面上。 n侧电极设置在不包括发光层的区域的第二面上。磷光体层设置在第一面上。荧光体层包括分散在透明树脂中的透明树脂和荧光体。透明膜设置在荧光体层上，粘合性低于透明树脂的粘合性。

9. 发明申请

US20130285011A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
公开(公告)号：US20130285011A1
公开(公告)日：2013-10-31
申请号：US13597096
申请日：2012-08-28
申请人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto
发明人： Akihiro Kojima , Hideto Furuyama , Miyoko Shimada , Yosuke Akimoto
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/12 , H01L33/0025 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/54
摘要： According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.

10. 发明授权

US08545670B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08545670B2
公开(公告)日：2013-10-01
申请号：US12209617
申请日：2008-09-12
申请人： Akihiro Kojima , Hisataka Hayashi , Akio Ui
发明人： Akihiro Kojima , Hisataka Hayashi , Akio Ui
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165
摘要： A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode.
摘要翻译：使用等离子体处理衬底的等离子体处理装置包括：被配置为安装衬底的第一电极，以预定空间设置为面对第一电极的第二电极，容纳第一电极和第二电极的腔室，调整内部气氛的第一电源装置，被配置为向第一电极施加用于控制在基板上产生的自偏压的第一RF电压的第一电源装置，施加基本上恒定的宽度和基本恒定的值的第一电力源装置在间隔的第一频率的RF电压的峰峰值电压中，以及第二电源装置，被配置为将第二频率的第二RF电压施加到第一和第二电极之间的等离子体之一第一电极和第二电极。

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