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1. 发明授权

US08038161B2 Folding structure for carrier's handlebar 有权
标题翻译：承载车把的折叠结构
公开(公告)号：US08038161B2
公开(公告)日：2011-10-18
申请号：US12078492
申请日：2008-04-01
申请人： Arthur Wang
发明人： Arthur Wang
IPC分类号： B62M1/00
CPC分类号： B62K15/006 , B62K3/002 , B62K7/04 , B62K21/16 , Y10T74/20792
摘要： This invention relates to a folding structure for carrier's handlebar, wherein it essentially comprises: a first joint (2) fixed in the front end of a carrier body (1) and having positioning teeth (25) formed on the sidewall in the interior thereof, and a second joint (3) pivotally provided in the first joint (2); a rail block (33) being fixed in the interior of the second joint (3), the rail block (33) being formed with a sliding rail (331), a slider (34) being formed in the sliding rail (331), occluding teeth (341) being formed on the bottom end of the slider (34) to mesh with the positioning teeth (25) of the first joint (2), a wire body (35) and an elastic member (36) being provided on the top end of the slider (34), and a dragon head handlebar (12) being provided on the second joint (3). In this manner, it is convenient for user to adjust the angle of the dragon head handlebar. In addition, the elastic member enables the slider to mesh automatically with the positioning teeth so as to ensure the safety of user.
摘要翻译：本发明涉及一种用于托架车把的折叠结构，其中它基本上包括：第一接头（2），其固定在承载体（1）的前端并具有形成在其内部侧壁上的定位齿（25）以及枢转地设置在所述第一接头（2）中的第二接头（3）。轨道块（33）固定在第二接头（3）的内部，轨道块（33）形成有滑轨（331），滑动件（34）形成在滑轨（331）中，闭锁齿（341）形成在滑块（34）的底端上以与第一接头（2）的定位齿（25）啮合，线体（35）和弹性构件（36）设置在滑块（34）的顶端和设置在第二接头（3）上的龙头把手（12）。以这种方式，用户可以方便地调节龙头把手的角度。此外，弹性构件使得滑块能够与定位齿自动啮合，以确保用户的安全。

2. 发明授权

US07793949B2 Foldable vehicle frame 有权
标题翻译：可折叠车架
公开(公告)号：US07793949B2
公开(公告)日：2010-09-14
申请号：US12132046
申请日：2008-06-03
申请人： Arthur Wang
发明人： Arthur Wang
IPC分类号： B62B3/02
CPC分类号： B62D21/14 , B62K3/002 , B62K15/006
摘要： A foldable vehicle frame includes a first main body, a second main body having a pedal portion and at least one joint portion, and a connecting mechanism connected to the first main body and the second main body. The connecting mechanism further includes a pair of rod parts, and the pair of rod parts respectively has a head end and a tail end. The head end is rotatably connected to the first main body, and the tail end is rotatably connected to the second main body, such that the connecting mechanism is turned over and stacked at a lower layer of the first main body, and the pedal portion of the second main body is folded under the turned-over connecting mechanism, so as to form a folded state. Furthermore, the connecting mechanism, the first main body, and the second main body are all unfolded simultaneously to form an unfolded state.
摘要翻译：折叠车架包括第一主体，具有踏板部分和至少一个关节部分的第二主体以及连接到第一主体和第二主体的连接机构。连接机构还包括一对杆部分，并且一对杆部分别具有头端和尾端。头端可旋转地连接到第一主体，并且尾端可旋转地连接到第二主体，使得连接机构翻转并堆叠在第一主体的下层，并且踏板部分第二主体折叠在翻转连接机构下方，以形成折叠状态。此外，连接机构，第一主体和第二主体都同时展开以形成展开状态。

3. 发明申请

US20100084831A1 Device for allowing a wheeled vehicle for individuals to be dragged in a folded configuration 有权
标题翻译：用于允许个人的轮式车辆以折叠配置被拖动的装置
公开(公告)号：US20100084831A1
公开(公告)日：2010-04-08
申请号：US12285540
申请日：2008-10-08
申请人： Arthur Wang
发明人： Arthur Wang
IPC分类号： A61G5/08
CPC分类号： A61G5/08 , A61G5/04 , A61G5/085 , A61G5/0891 , A61G5/1089 , B60L11/18 , B60N2/3011 , B60N2/3065 , B60N2/309 , B62K5/007 , Y02T10/7005
摘要： A foldable wheeled vehicle for individuals includes a main body, front and rear wheels joined on the body, and an anti-tip wheel joined on a rear end of the main vehicle body; the rear wheels will be in an immobilized state when the vehicle isn't in-use; the anti-tilting wheel will move to be below the rear wheels automatically when the vehicle is folded; thus, the vehicle in the folded position can be dragged with the front wheels and the anti-tip wheel contacting the ground; secondly, the anti-tip wheel will be in a higher position than the rear wheels when the vehicle is in an expanded in-use position; thus, when the vehicle is moving along a slope and tilting rearwards, the anti-tip wheel will contact the ground to prevent the vehicle from tilting rearwards excessively to overturn.
摘要翻译：用于个人的可折叠轮式车辆包括主体，连接在主体上的前轮和后轮以及连接在主车身后端的防前轮; 当车辆不使用时，后轮将处于固定状态; 当车辆折叠时，防倾倒轮将自动移动到后轮下方; 因此，处于折叠位置的车辆可以与前轮和反尖端车轮接触地面而被拖动; 其次，当车辆处于膨胀的使用位置时，反头轮将处于比后轮更高的位置; 因此，当车辆沿着斜坡移动并向后倾斜时，防顶轮将接触地面，以防止车辆向后倾斜过度倾倒。

4. 发明申请

US20090241723A1 Folding structure for carrier's handlebar 有权
标题翻译：承载车把的折叠结构
公开(公告)号：US20090241723A1
公开(公告)日：2009-10-01
申请号：US12078492
申请日：2008-04-01
申请人： Arthur Wang
发明人： Arthur Wang
IPC分类号： B62K21/16
CPC分类号： B62K15/006 , B62K3/002 , B62K7/04 , B62K21/16 , Y10T74/20792
摘要： This invention relates to a folding structure for carrier's handlebar, wherein it essentially comprises: a first joint (2) fixed in the front end of a carrier body (1) and having positioning teeth (25) formed on the sidewall in the interior thereof, and a second joint (3) pivotally provided in the first joint (2); a rail block (33) being fixed in the interior of the second joint (3), the rail block (33) being formed with a sliding rail (331), a slider (34) being formed in the sliding rail (331), occluding teeth (341) being formed on the bottom end of the slider (34) to mesh with the positioning teeth (25) of the first joint (2), a wire body (35) and an elastic member (36) being provided on the top end of the slider (34), and a dragon head handlebar (12) being provided on the second joint (3). In this manner, it is convenient for user to adjust the angle of the dragon head handlebar. In addition, the elastic member enables the slider to mesh automatically with the positioning teeth so as to ensure the safety of user.
摘要翻译：本发明涉及一种用于托架车把的折叠结构，其中它基本上包括：第一接头（2），其固定在承载体（1）的前端并具有形成在其内部侧壁上的定位齿（25）以及枢转地设置在所述第一接头（2）中的第二接头（3）。轨道块（33）固定在第二接头（3）的内部，轨道块（33）形成有滑轨（331），滑动件（34）形成在滑轨（331）中，闭锁齿（341）形成在滑块（34）的底端上以与第一接头（2）的定位齿（25）啮合，线体（35）和弹性构件（36）设置在滑块（34）的顶端和设置在第二接头（3）上的龙头把手（12）。以这种方式，用户可以方便地调节龙头把手的角度。此外，弹性构件使得滑块能够与定位齿自动啮合，以确保用户的安全。

5. 发明授权

US07472923B2 Assistant stand mechanism of a cart for people to ride on 有权
标题翻译：一个推车的助理支架机制人们骑车
公开(公告)号：US07472923B2
公开(公告)日：2009-01-06
申请号：US11335651
申请日：2006-01-20
申请人： Arthur Wang
发明人： Arthur Wang
IPC分类号： B60B11/10
CPC分类号： B62K5/007 , B60Y2200/126 , B60Y2200/84 , B62B3/10 , B62B2202/90 , B62B2203/05 , Y10S180/907 , Y10S180/908
摘要： A cart has an assistant stand mechanism, which includes two first casters, a pair of metallic angle plates, a support rod, and a second caster with a brake; each of the first casters is fitted to one of two rear lateral straight parts of a chassis; the metallic angle plates are each screwed onto a respective one of the rear lateral straight parts of the chassis; the support rod is secured to the metallic angle plates at two ends such that it crosses the cart, and is normally perpendicular to the ground where the cart stands; the second caster is fitted to the support rod; further, there are two sloping rods, each connected to the support rod at one end, and connected to a corresponding metallic angle plate at the other end; thus, the cart can stand on the casters with the chassis in upright position.
摘要翻译：推车具有辅助支架机构，其包括两个第一脚轮，一对金属角板，支撑杆和具有制动器的第二脚轮; 每个第一脚轮装配到底盘的两个后横向直线部分中的一个; 金属角板各自拧入底盘的后横向直线部分中的相应一个; 支撑杆在两端固定到金属角板上，使得其与推车相交，并且通常垂直于推车架的地面; 第二脚轮安装在支撑杆上; 此外，还有两个倾斜杆，每个倾斜杆在一端连接到支撑杆，并在另一端连接到相应的金属角板; 因此，推车可以在底盘处于直立位置的情况下站在脚轮上。

6. 发明授权

US07408212B1 Stackable resistive cross-point memory with schottky diode isolation 有权
标题翻译：具有肖特基二极管隔离的可堆叠电阻交叉点存储器
公开(公告)号：US07408212B1
公开(公告)日：2008-08-05
申请号：US10777560
申请日：2004-02-11
申请人： Harry S. Luan , Jein-Chen Young , Arthur Wang , Kai-Cheng Chou , Kenlin Huang
发明人： Harry S. Luan , Jein-Chen Young , Arthur Wang , Kai-Cheng Chou , Kenlin Huang
IPC分类号： H01L29/76
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/71 , G11C2213/72 , G11C2213/76 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： An electrically programmable, non-volatile resistive memory includes an array of memory cells, a plurality of bit lines, and a plurality of word lines. Each memory cell comprises a resistive element and a Schottky diode coupled in series and having first and second terminals. Each bit line couples to the first terminal of all memory cells in a respective column of the array. Each word line couples to the second terminal of all memory cells in a respective row of the array. The resistive element for each memory cell may be formed with a film of a perovskite material (e.g., Pr0.7Ca0.3MnO3). The Schottky diode for each memory cell may be formed by a thin film of amorphous silicon. The films for the resistive element and Schottky diode for each memory cell may be stacked in a compact island at the cross point between a bit line and a word line.
摘要翻译：电可编程的非易失性电阻存储器包括存储器单元阵列，多个位线和多个字线。每个存储单元包括串联耦合并具有第一和第二端子的电阻元件和肖特基二极管。每个位线耦合到阵列的相应列中的所有存储器单元的第一端。每个字线耦合到阵列的相应行中的所有存储器单元的第二端子。用于每个存储单元的电阻元件可以由钙钛矿材料（例如，Pr 0.7 N 0.3 Mn 0.3 O 3）的膜形成。每个存储单元的肖特基二极管可以由非晶硅薄膜形成。用于每个存储单元的电阻元件和肖特基二极管的膜可以堆叠在位线和字线之间的交叉点处的紧凑岛中。

7. 发明授权

US07250341B2 Flash memory device having poly spacers 失效
标题翻译：具有聚间隔物的闪存器件
公开(公告)号：US07250341B2
公开(公告)日：2007-07-31
申请号：US11100123
申请日：2005-04-05
申请人： Hsingya Arthur Wang , Kai-Cheng Chou , Peter Rabkin
发明人： Hsingya Arthur Wang , Kai-Cheng Chou , Peter Rabkin
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L27/115 , H01L27/11521
摘要： A non-volatile memory device includes a substrate having a first active region and a second active region. A first floating gate is provided over the first active region and having an edge, the first floating gate being made of a conductive material. A first spacer is connected to the edge of the first floating gate and being made of the same conductive material as that of the first floating gate. A control gate is provided proximate to the floating gate.
摘要翻译：非易失性存储器件包括具有第一有源区和第二有源区的衬底。第一浮动栅极设置在第一有源区上并具有边缘，第一浮栅由导电材料制成。第一间隔件连接到第一浮栅的边缘并由与第一浮栅相同的导电材料制成。控制门靠近浮动栅极设置。

8. 发明授权

US07172939B1 Method and structure for fabricating non volatile memory arrays 失效
标题翻译：制造非易失性存储器阵列的方法和结构
公开(公告)号：US07172939B1
公开(公告)日：2007-02-06
申请号：US11280529
申请日：2005-11-15
申请人： Kai Cheng Chou , Harry Laun , Kenlin Huang , J. C. Young , Arthur Wang
发明人： Kai Cheng Chou , Harry Laun , Kenlin Huang , J. C. Young , Arthur Wang
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11573
摘要： An MONOS integrated circuit device. The device has a semiconductor substrate comprising a silicon bearing material and a shallow trench isolation region formed within the substrate. A P-type well region is formed within the substrate and adjacent to the shallow trench isolation region. The first word gate comprising a first edge and a second edge. The first word gate comprises a first control gate coupled to the first edge and a second control gate coupled to the second edge. Preferably, the second word gate comprises a first edge and a second edge. The second word gate comprises a first control gate coupled to the first edge and a second control gate coupled to the second edge. A common buried bit line is formed within the P-type well region and between the second edge of the first word gate and the first edge of the second word gate. An HDP plasma dielectric is formed overlying the common buried bitline to a height within a vicinity of a first surface of the first word gate and a second surface of the second word gate. In a preferred embodiment, the device has a planarized surface formed from a portion of the HDP plasma dielectric, the first surface, and the second surface. A word line is overlying the planarized surface. The word line is coupled to the first word gate and the second word gate and is overlying the HDP plasma dielectric. The device has a refractory metal layer formed overlying the word line, a hard mask layer overlying the refractory metal layer, and a cap layer formed overlying the hard mask layer. The word line, refractory metal layer, hard mask layer, and cap layer form a planarized structure.
摘要翻译： MONOS集成电路器件。该器件具有包括硅衬底材料和形成在衬底内的浅沟槽隔离区域的半导体衬底。 P型阱区形成在衬底内并与浅沟槽隔离区相邻。所述第一字门包括第一边缘和第二边缘。第一字门包括耦合到第一边缘的第一控制栅极和耦合到第二边缘的第二控制栅极。优选地，第二字门包括第一边缘和第二边缘。第二字门包括耦合到第一边缘的第一控制栅极和耦合到第二边缘的第二控制栅极。在P型阱区域内和第一字栅极的第二边缘与第二字门的第一边缘之间形成公共掩埋位线。 HDP等离子体电介质形成在公共掩埋位线上方至第一字栅极的第一表面附近的高度和第二字门的第二表面。在优选实施例中，该装置具有由HDP等离子体电介质，第一表面和第二表面的一部分形成的平坦化表面。字线覆盖在平坦化表面上。字线耦合到第一字门和第二字门，并且覆盖HDP等离子体电介质。该装置具有形成在字线上方的难熔金属层，覆盖难熔金属层的硬掩模层和覆盖在硬掩模层上的盖层。字线，难熔金属层，硬掩模层和盖层形成平坦化结构。

9. 发明申请

US20050260857A1 Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma 有权
标题翻译： PCMO薄膜的方法和结果可通过电感耦合等离子体选择性地获得蚀刻速率和掩模
公开(公告)号：US20050260857A1
公开(公告)日：2005-11-24
申请号：US10854755
申请日：2004-05-24
申请人： Kenlin Huang , K.C. Chou , Harry Luan , J.C. Young , Arthur Wang
发明人： Kenlin Huang , K.C. Chou , Harry Luan , J.C. Young , Arthur Wang
IPC分类号： H01L21/302 , H01L27/24 , H01L45/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L45/1233 , H01L45/147 , H01L45/1625 , H01L45/1675
摘要： A high selectivity and etch rate with innovative approach of inductively coupled plasma source. Preferably, the invention includes a method using plasma chemistry that is divided into main etch step of (e.g., Cl2+HBr+C4F8) gas combination and over etch step of (e.g., HBr+Ar). The main etch step provides a faster etch rate and selectivity while the over etch step will decrease the etch rate and ensure the stringer and residue removal without attacking the under layer.
摘要翻译：电感耦合等离子体源的创新方法具有高选择性和蚀刻速率。优选地，本发明包括使用等离子体化学的方法，该方法被分为主蚀刻步骤（例如，Cl 2→H + HBr + C→S→S + ））（例如，HBr + Ar）的气体组合和过蚀刻步骤。主蚀刻步骤提供更快的蚀刻速率和选择性，而过蚀刻步骤将降低蚀刻速率并确保桁条和残留物的去除而不侵蚀底层。

10. 发明授权

US06777741B2 Non-volatile memory cells with selectively formed floating gate 失效
标题翻译：具有选择性形成的浮动栅极的非易失性存储单元
公开(公告)号：US06777741B2
公开(公告)日：2004-08-17
申请号：US10393603
申请日：2003-03-19
申请人： Peter Rabkin , Hsingya Arthur Wang , Kai-Cheng Chou
发明人： Peter Rabkin , Hsingya Arthur Wang , Kai-Cheng Chou
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , H01L27/115
摘要： Non-volatile memory transistors are provided that include a floating gate formed from first and second layers of material such as polysilicon. The second floating gate layer is selectively grown or deposited on top of the first gate layer, eliminating the need to mask for positioning of the second floating gate layer. The memory transistors are separated by isolation regions. The second floating gate layer overlaps portions of the isolation regions to provide a high control gate-to-floating gate coupling ratio. The process enables smaller memory transistors. Floating gate to isolation overlap, and therefore floating gate to floating gate spacing, is controlled by selective deposition or selective epitaxial growth of the second polysilicon layer.
摘要翻译：提供了非易失性存储晶体管，其包括由第一和第二层材料（例如多晶硅）形成的浮置栅极。第二浮栅层选择性地生长或沉积在第一栅极层的顶部上，消除了对第二浮栅层定位的掩模的需要。存储晶体管由隔离区域分隔开。第二浮栅层与隔离区域的一部分重叠以提供高控制栅 - 浮栅耦合比。该过程使更小的存储晶体管。浮栅为隔离重叠，因此浮栅为浮栅间隔，通过第二多晶硅层的选择性沉积或选择性外延生长来控制。

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