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1. 发明授权

US08148760B2 Visible light detecting semiconductor radiation detector 有权
标题翻译：可见光检测半导体辐射探测器
公开(公告)号：US08148760B2
公开(公告)日：2012-04-03
申请号：US12087380
申请日：2006-12-29
申请人： Artto Aurola
发明人： Artto Aurola
IPC分类号： H01L31/062
CPC分类号： H01L27/1446
摘要： A semiconductor radiation detector device, comprising a bulk layer (103) of semiconductor material, and on the first surface of the bulk layer (303) in the following order: a modified internal gate layer (104) of semiconductor material of second conductivity type, a barrier layer (305) of semiconductor material of first conductivity type and pixel dopings (131, 132, 133) of semiconductor material of the second conductivity type, adapted to be coupled to at least one pixel voltage in order to create pixels corresponding to pixel dopings, characterized in that the device comprises a first contact of first conductivity type and said pixel voltage is defined as the potential difference between the pixel doping and the first contact.
摘要翻译：一种半导体辐射检测器件，包括半导体材料的体层（103），并且按照以下顺序在体层（303）的第一表面上：第二导电类型的半导体材料的修改的内部栅极层（104）第一导电类型的半导体材料的阻挡层（305）和第二导电类型的半导体材料的像素掺杂（131,132,133），适于耦合到至少一个像素电压，以便产生对应于像素的像素掺杂，其特征在于，所述器件包括第一导电类型的第一接触，并且所述像素电压被定义为像素掺杂和第一接触之间的电势差。

2. 发明申请

US20080315265A1 Semiconductor Radiation Detector Optimized for Detecting Visible Light 有权
标题翻译：半导体辐射检测器优化用于检测可见光
公开(公告)号：US20080315265A1
公开(公告)日：2008-12-25
申请号：US12087359
申请日：2006-02-17
申请人： Artto Aurola
发明人： Artto Aurola
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14643 , H01L27/14601 , H01L27/1464 , H01L27/14645 , H01L27/14649 , H01L27/14679 , H01L27/14681
摘要： A semiconductor radiation detector comprises a bulk layer of semiconductor material, and on a first surface of the bulk layer in the following order: a modified internal gate layer of semiconductor of second conductivity type, a barrier layer of semiconductor of first conductivity type and pixel dopings of semiconductor of the second conductivity type. The pixel dopings are adapted to be coupled to at least one pixel voltage in order to create pixels corresponding to pixel dopings. The device comprises a first conductivity type first contact. Said pixel voltage is defined as a potential difference between the pixel doping and the first contact. The bulk layer is of the first conductivity type. On a second surface of the bulk layer opposite to the first surface, there is nonconductive back side layer that would transport secondary charges outside the active area of the device or function as the radiation entry window.
摘要翻译：半导体辐射检测器包括半导体材料的体层，并且在主体层的第一表面上按以下顺序：第二导电类型的半导体的修改的内部栅极层，第一导电类型的半导体的阻挡层和像素掺杂的第二导电类型的半导体。像素掺杂适于耦合到至少一个像素电压，以便产生对应于像素掺杂的像素。该装置包括第一导电类型的第一接触。所述像素电压被定义为像素掺杂和第一接触之间的电位差。本体层是第一导电类型。在与第一表面相对的体层的第二表面上，存在不导电的背侧层，其将辅助电荷输送到装置的有效区域外部或者用作辐射入口窗口。

3. 发明授权

US08288837B2 Semiconductor radiation detector optimized for detecting visible light 有权
标题翻译：半导体辐射探测器优化用于检测可见光
公开(公告)号：US08288837B2
公开(公告)日：2012-10-16
申请号：US12087359
申请日：2006-02-17
申请人： Artto Aurola
发明人： Artto Aurola
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L27/14601 , H01L27/1464 , H01L27/14645 , H01L27/14649 , H01L27/14679 , H01L27/14681
摘要： A semiconductor radiation detector comprises a bulk layer of semiconductor material, and on a first surface of the bulk layer in the following order: a modified internal gate layer of semiconductor of second conductivity type, a barrier layer of semiconductor of first conductivity type and pixel dopings of semiconductor of the second conductivity type. The pixel dopings are adapted to be coupled to at least one pixel voltage in order to create pixels corresponding to pixel dopings. The device comprises a first conductivity type first contact. Said pixel voltage is defined as a potential difference between the pixel doping and the first contact. The bulk layer is of the first conductivity type. On a second surface of the bulk layer opposite to the first surface, there is nonconductive back side layer that would transport secondary charges outside the active area of the device or function as the radiation entry window.
摘要翻译：半导体辐射检测器包括半导体材料的体层，并且在主体层的第一表面上按以下顺序：第二导电类型的半导体的修改的内部栅极层，第一导电类型的半导体的阻挡层和像素掺杂的第二导电类型的半导体。像素掺杂适于耦合到至少一个像素电压，以便产生对应于像素掺杂的像素。该装置包括第一导电类型的第一接触。所述像素电压被定义为像素掺杂和第一接触之间的电位差。本体层是第一导电类型。在与第一表面相对的体层的第二表面上，存在不导电的背侧层，其将辅助电荷输送到装置的有效区域外部或者用作辐射入口窗口。

4. 发明申请

US20070222012A1 Semiconductor Device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070222012A1
公开(公告)日：2007-09-27
申请号：US11596054
申请日：2005-05-10
申请人： Artto Aurola
发明人： Artto Aurola
IPC分类号： H01L27/14
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14812 , H01L31/03529 , H01L31/109 , Y02E10/50
摘要： A semiconductor device, including a first region (100) of semiconductor material of a first conductivity type. The semiconductor device comprises an elongated spatial element (111, 112, 113) of semiconductor material of a second conductivity type protruding into a first region (100) of semiconductor material of a first conductivity type; and a bias voltage supply adjusted in operation to fully deplete the spatial element from majority carriers of the second conductivity type. A semiconductor device according to the invention is resistant to smear, has a fill factor equal to one, and due to low total capacitance provides improved sensitivity.
摘要翻译：一种半导体器件，包括第一导电类型的半导体材料的第一区域（100）。半导体器件包括突出到第一导电类型的半导体材料的第一区域（100）中的第二导电类型的半导体材料的细长空间元件（111,112,113）以及在操作中调节的偏置电压电源，以从第二导电类型的多数载流子中充分耗尽空间元件。根据本发明的半导体器件耐污迹，填充因子等于1，并且由于低的总电容提供了改善的灵敏度。

5. 发明授权

US10079325B2 Semiconductor radiation detector 有权
公开(公告)号：US10079325B2
公开(公告)日：2018-09-18
申请号：US15033743
申请日：2014-11-04
申请人： Artto Aurola
发明人： Artto Aurola
IPC分类号： H01L31/11 , H01L27/14 , H01L31/113 , H01L27/146
CPC分类号： H01L31/1136 , H01L27/1461 , H01L27/14616
摘要： A semiconductor radiation detector device includes a semiconductor substrate. On one surface of the substrate are a MIG layer (241) of semiconductor of second conductivity type, a barrier layer (251) of semiconductor of first conductivity type, and pixel dopings of semiconductor of the second conductivity type. The pixel dopings are adapted to be coupled to at least one pixel voltage in order to create a source and a drain of a pixel-specific transistor. The device further includes a first conductivity type first contact, so that the pixel voltage is a potential difference between one of the pixel dopings and the first conductivity type first contact. The location of a main gate (983) corresponds at least partly to the location of a channel between the source and the drain. The device includes at least one extra gate (981, 982) horizontally displaced from the main gate (983).

6. 发明申请

US20100133441A1 Semiconductor Radiation Detector With a Modified Internal Gate Structure 有权
标题翻译：具有改进的内部门结构的半导体辐射检测器
公开(公告)号：US20100133441A1
公开(公告)日：2010-06-03
申请号：US11660562
申请日：2005-08-22
申请人： Artto Aurola
发明人： Artto Aurola
IPC分类号： G01T1/24
CPC分类号： H01L27/14679 , H01L27/1464 , H01L27/14681 , H01L27/14812
摘要： A semiconductor radiation detector device comprises a conductive backside layer (102) of first conductivity type and a bulk layer (103). Opposite to the conductive backside layer (102) there are a modified internal gate layer (104) of second conductivity type, a barrier layer (105) of the first conductivity type and pixel dopings (110, 112, 506, 510, 512) of the second conductivity type. The pixel dopings are adapted to be coupled to a pixel voltage, which is defined as a potential difference to a potential of the conductive backside layer (102), and which creates potential minima inside the detector material for trapping the signal charges.
摘要翻译：半导体辐射检测器装置包括第一导电类型的导电背面层（102）和体层（103）。与导电背面层（102）相对，存在第二导电类型的修改的内部栅极层（104），第一导电类型的阻挡层（105）和像素掺杂（110,112,506,510,512）第二种导电类型。像素掺杂适于耦合到像素电压，其被定义为与导电背面层（102）的电位的电位差，并且其在检测器材料内部产生用于俘获信号电荷的电位最小值。

7. 发明申请

US20090206436A1 SEMICONDUCTOR APPARATUS 有权
公开(公告)号：US20090206436A1
公开(公告)日：2009-08-20
申请号：US12307980
申请日：2006-12-01
申请人： Artto Aurola
发明人： Artto Aurola
IPC分类号： H01L31/107 , H01L31/09 , H01L31/02
CPC分类号： H01L27/14683 , H01L27/1446 , H01L27/1463 , H01L27/14636 , H01L29/0642 , H01L29/405 , H01L29/423 , H01L29/42304 , H01L29/66295 , H01L29/737 , H01L31/03529 , Y02E10/50
摘要： An improved semiconductor apparatus that comprises an elongated structure that extends into the substrate. The apparatus comprises a collection contact, a resistive path, a bias connection that creates along the length of the elongated structure, an electric field component that drives signal charge carriers in a direction perpendicular to the elongated structure, and a second bias that generates a current flow that creates within the substrate a constant electric field component to drive signal charge carriers towards the collection contact on the first surface.
摘要翻译：一种改进的半导体器件，其包括延伸到衬底中的细长结构。该装置包括收集触点，电阻路径，沿着细长结构的长度产生的偏置连接，沿垂直于细长结构的方向驱动信号电荷载流子的电场分量，以及产生电流的第二偏置在衬底内产生恒定的电场分量以将信号电荷载流子驱动朝向第一表面上的收集接触。

8. 发明授权

US09948304B2 Semiconductor logic element and a logic circuitry 有权
公开(公告)号：US09948304B2
公开(公告)日：2018-04-17
申请号：US15543801
申请日：2016-01-13
申请人： Artto Aurola
发明人： Artto Aurola
IPC分类号： H03K19/0185 , H01L29/36 , H01L27/092 , H01L29/06
CPC分类号： H03K19/018521 , H01L27/0207 , H01L27/0629 , H01L27/092 , H01L27/098 , H01L27/1203 , H01L29/0649 , H01L29/0692 , H01L29/1033 , H01L29/36 , H01L29/78 , H01L29/808 , H01L29/8083 , H03K19/0013 , H03K19/00315 , H03K19/094 , H03K19/0952 , H03K19/20
摘要： Disclosed is a semiconductor logic element including a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. Also disclosed are different kinds of logic circuitries including the described logic element.

9. 发明申请

US20160340215A1 A method for treating sulphate-containing waters 审中-公开
标题翻译：一种处理含硫酸盐水的方法
公开(公告)号：US20160340215A1
公开(公告)日：2016-11-24
申请号：US15104552
申请日：2014-02-11
申请人： Artto Aurola
发明人： Artto Aurola
IPC分类号： C02F3/34 , C02F3/28 , B01D53/76 , C02F5/06 , B01D53/34 , B01D53/52 , C02F1/20 , C02F1/52
CPC分类号： C02F3/345 , B01D53/343 , B01D53/52 , B01D53/76 , B01D2251/102 , C02F1/20 , C02F1/52 , C02F3/28 , C02F5/06 , C02F2101/101 , C02F2101/20 , C02F2103/10 , C02F2209/02 , C02F2209/03 , C02F2209/06 , C02F2301/063 , C02F2303/10 , Y02W10/30
摘要： The invention relates to a method for processing sulphate-containing water. The method contains stages in which sulphate-containing water is directed to an anaerobic bioreactor, and an anaerobic bacterial strain that converts sulphate to hydrogen sulphide converts the sulphate contained in the water to hydrogen sulphide gas. The resulting hydrogen sulphide gas is directed for incineration in a hydrogen sulphide incineration unit, which produces combustion gases containing sulphur dioxide. Energy released at various stages in the process is recovered and reused in the same process. The residual water is removed from the bioreactor.
摘要翻译：本发明涉及一种加工含硫酸盐水的方法。该方法包含将含硫酸盐的水引导到厌氧生物反应器的阶段，并且将硫酸盐转化为硫化氢的厌氧细菌菌株将包含在水中的硫酸盐转化为硫化氢气体。所产生的硫化氢气体被引导用于在硫化氢焚烧单元中焚烧，其产生含有二氧化硫的燃烧气体。在该过程的各个阶段释放的能量在相同的过程中被回收和重复使用。从生物反应器中除去残留的水。

10. 发明申请

US20160240720A1 IMPROVED SEMICONDUCTOR RADIATION DETECTOR 审中-公开
标题翻译：改进的半导体辐射探测器
公开(公告)号：US20160240720A1
公开(公告)日：2016-08-18
申请号：US15033743
申请日：2014-11-04
申请人： Artto AUROLA
发明人： Artto AUROLA
IPC分类号： H01L31/113 , H01L27/146
CPC分类号： H01L31/1136 , H01L27/1461 , H01L27/14616
摘要： A semiconductor radiation detector device includes a semiconductor substrate. On one surface of the substrate are a MIG layer (241) of semiconductor of second conductivity type, a barrier layer (251) of semiconductor of first conductivity type, and pixel dopings of semiconductor of the second conductivity type. The pixel dopings are adapted to be coupled to at least one pixel voltage in order to create a source and a drain of a pixel-specific transistor. The device further includes a first conductivity type first contact, so that the pixel voltage is a potential difference between one of the pixel dopings and the first conductivity type first contact. The location of a main gate (983) corresponds at least partly to the location of a channel between the source and the drain. The device includes at least one extra gate (981, 982) horizontally displaced from the main gate (983).
摘要翻译：半导体辐射检测器件包括半导体衬底。在衬底的一个表面上是第二导电类型的半导体的MIG层（241），第一导电类型的半导体的阻挡层（251）和第二导电类型的半导体的像素掺杂。像素掺杂适于耦合到至少一个像素电压，以便产生像素特定晶体管的源极和漏极。该器件还包括第一导电类型的第一接触，使得像素电压是像素掺杂中的一个与第一导电类型的第一接触之间的电位差。主门（983）的位置至少部分地对应于源极和漏极之间的通道的位置。该装置包括从主门（983）水平移位的至少一个附加门（981,982）。

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