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    • 4. 发明申请
    • Semiconductor memory device and read wait time adjustment method thereof, memory system, and semiconductor device
    • 半导体存储器件及其读取等待时间调整方法,存储器系统和半导体器件
    • US20100182856A1
    • 2010-07-22
    • US12656061
    • 2010-01-14
    • Atsuo Koshizuka
    • Atsuo Koshizuka
    • G11C7/00G11C8/18
    • G11C8/18G11C7/1051G11C7/1066G11C7/1072G11C7/22G11C7/222G11C11/4076G11C11/4096
    • A semiconductor memory device operates in synchronization with a system clock, without using a synchronous circuit such as a DLL or a PLL. The semiconductor memory device includes a synchronous circuit for generating output signals phase aligned with the system clock, a synchronous circuit selection circuit that performs switching between a synchronous circuit selection mode and a synchronous circuit non-selection mode, and a reference edge specifying register that specifies an edge of an internal clock which serves as a reference for outputting read data in the synchronous circuit non-selection mode. In the synchronous circuit selection mode, the read data is output by adjusting a phase deviation of the internal clock with respect to the system clock, using the synchronous circuit. In the synchronous circuit non-selection mode, the read data is output in synchronization with the internal clock, without using the synchronous circuit. For a delay of the internal clock with respect to the system clock, the edge of the internal clock used as the reference is adjusted by the reference edge specifying register. Then, even if the synchronous circuit is not used, a large timing deviation does not thereby occur.
    • 半导体存储器件与系统时钟同步地工作,而不使用诸如DLL或PLL的同步电路。 半导体存储装置包括:同步电路,用于产生与系统时钟相位相对的输出信号;执行同步电路选择模式和同步电路非选择模式之间的切换的同步电路选择电路;以及参考边沿指定寄存器, 作为在同步电路非选择模式下输出读取数据的基准的内部时钟的边沿。 在同步电路选择模式中,使用同步电路,通过调整内部时钟相对于系统时钟的相位偏差来输出读取数据。 在同步电路非选择模式下,读取数据与内部时钟同步输出,不使用同步电路。 对于相对于系统时钟的内部时钟的延迟,用作参考的内部时钟的边沿由参考边沿指定寄存器调整。 然后,即使不使用同步电路,也不会发生大的定时偏差。
    • 7. 发明授权
    • Semiconductor memory device, method of controlling read preamble signal thereof, and data transmission system
    • 半导体存储器件,控制其前导码信号的方法和数据传输系统
    • US08811052B2
    • 2014-08-19
    • US13621061
    • 2012-09-15
    • Atsuo Koshizuka
    • Atsuo Koshizuka
    • G11C15/00
    • G11C11/4076G11C7/1051G11C7/1066G11C7/1072G11C7/22G11C7/222G11C8/18G11C11/409G11C11/4096G11C15/00G11C15/04
    • A system, includes a controller comprising a plurality of first external terminals configured to supply a command and an address, and communicate a data, and communicate a strobe signal related to the data; and a semiconductor memory device including a plurality of second external terminals corresponding to the plurality of first external terminals, at least one of the plurality of first external terminals and at least one of the plurality of second external terminals each being capable of supplying an information specifying a length of a preamble of the strobe signal before the semiconductor memory device communicates the data between the controller and the semiconductor memory device, the semiconductor memory device further including a preamble register configured to be capable of storing the information.
    • 一种系统,包括:控制器,包括被配置为提供命令和地址的多个第一外部终端,并且传送数据,并传送与所述数据相关的选通信号; 以及半导体存储装置,包括对应于多个第一外部端子的多个第二外部端子,所述多个第一外部端子和所述多个第二外部端子中的至少一个能够提供指定的信息 所述半导体存储器件在所述半导体存储器件在所述控制器与所述半导体存储器件之间通信数据之前的所述选通信号的前导码的长度,所述半导体存储器件还包括被配置为能够存储所述信息的前导码存储器。