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1. 发明授权

US09209209B2 Photoelectric conversion device and method for operating the same 有权
标题翻译：光电转换装置及其操作方法
公开(公告)号：US09209209B2
公开(公告)日：2015-12-08
申请号：US13277244
申请日：2011-10-20
申请人： Atsushi Hirose
发明人： Atsushi Hirose
IPC分类号： H01J40/14 , H01L31/112 , H01L27/144 , G01J1/46 , H04N5/374
CPC分类号： H01L27/1443 , G01J1/46 , H04N5/374
摘要： To provide a photoelectric conversion device with low power consumption and a method for operating the photoelectric conversion device. The photoelectric conversion device includes a charge storage capacitor portion, a photodiode, and a plurality of transistors. The charge storage capacitor portion is charged after being reset. Then, the charge storage capacitor portion is discharged through the photodiode or a current mirror circuit connected to the photodiode for a given period of time, and after that, the potential of the charge storage capacitor portion is read. Since power is consumed only at the time of charging, power consumption can be reduced.
摘要翻译：提供具有低功耗的光电转换装置和用于操作光电转换装置的方法。光电转换装置包括电荷存储电容器部分，光电二极管和多个晶体管。复位后，对电荷存储电容部进行充电。然后，通过光电二极管或连接到光电二极管的电流镜电路给定电荷存储电容器部分放电一定时间，然后读取电荷存储电容器部分的电位。由于仅在充电时消耗电力，因此可以降低功耗。

2. 发明授权

US08772752B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08772752B2
公开(公告)日：2014-07-08
申请号：US13477373
申请日：2012-05-22
申请人： Hidekazu Miyairi , Atsushi Hirose , Yoshitaka Yamamoto , Tomohiro Kimura
发明人： Hidekazu Miyairi , Atsushi Hirose , Yoshitaka Yamamoto , Tomohiro Kimura
IPC分类号： H01L47/00
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/78633 , H01L29/78648
摘要： An object is to prevent light leakage caused due to misregistration even when the width of a black matrix layer is not expanded to a designed value or larger. One embodiment of the present invention is a semiconductor device including a single-gate thin film transistor in which a first semiconductor layer is sandwiched between a bottom-gate electrode and a first black matrix layer. The first semiconductor layer and the first black matrix layer overlap with each other.
摘要翻译：目的是防止黑色矩阵层的宽度未扩大到设计值以上的情况下由于配准不良引起的漏光。本发明的一个实施例是一种包括单栅极薄膜晶体管的半导体器件，其中第一半导体层夹在底栅电极和第一黑矩阵层之间。第一半导体层和第一黑矩阵层彼此重叠。

3. 发明授权

US08716646B2 Photoelectric conversion device and method for operating the same 有权
标题翻译：光电转换装置及其操作方法
公开(公告)号：US08716646B2
公开(公告)日：2014-05-06
申请号：US13252226
申请日：2011-10-04
申请人： Atsushi Hirose
发明人： Atsushi Hirose
IPC分类号： H01J40/14
CPC分类号： H01L31/02019 , G01J1/44 , H01L31/105 , H03F3/082
摘要： In a photoelectric conversion device including a photodiode and a current mirror circuit, a diode-connected transistor is provided in parallel with the photodiode. The transistor serves as a leakage path for rapidly discharging charge stored in the gate capacitance in the current mirror circuit. Thus, the response speed of the photoelectric conversion device is increased, and output of an abnormal value is reduced.
摘要翻译：在包括光电二极管和电流镜电路的光电转换装置中，与光电二极管并联设置二极管连接的晶体管。晶体管用作用于快速放电存储在电流镜电路中的栅极电容中的电荷的泄漏路径。因此，光电转换装置的响应速度增加，异常值的输出减少。

4. 发明授权

US08598586B2 Thin film transistor and manufacturing method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08598586B2
公开(公告)日：2013-12-03
申请号：US12970460
申请日：2010-12-16
申请人： Toshiyuki Isa , Atsushi Hirose
发明人： Toshiyuki Isa , Atsushi Hirose
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/124 , H01L29/04 , H01L29/66765 , H01L29/78618 , H01L29/78648 , H01L29/78678
摘要： Disclosed is a thin film transistor including: a gate insulating layer covering a gate electrode; a microcrystalline semiconductor region over the gate insulating layer; a pair of amorphous semiconductor region over the microcrystalline semiconductor; a pair of impurity semiconductor layers over the amorphous semiconductor regions; and wirings over the impurity semiconductor layers. The microcrystalline semiconductor region has a surface having a projection and depression on the gate insulating layer side. The microcrystalline semiconductor region includes a first microcrystalline semiconductor region which is not covered with the amorphous regions and a second microcrystalline semiconductor region which is in contact with the amorphous semiconductor regions. A thickness d1 of the first microcrystalline semiconductor region is smaller than a thickness d2 of the second microcrystalline semiconductor region and d1 is greater than or equal to 30 nm.
摘要翻译：公开了一种薄膜晶体管，包括：覆盖栅电极的栅极绝缘层; 栅极绝缘层上的微晶半导体区域; 微晶半导体上的一对非晶半导体区域; 在所述非晶半导体区域上的一对杂质半导体层; 以及杂质半导体层上的布线。微晶半导体区域具有在栅极绝缘层侧具有突出和凹陷的表面。微晶半导体区域包括未被无定形区域覆盖的第一微晶半导体区域和与非晶半导体区域接触的第二微晶半导体区域。第一微晶半导体区域的厚度d1小于第二微晶半导体区域的厚度d2，d1大于或等于30nm。

5. 外观设计

USD688160S1 Motor vehicle and/or toy replica thereof 有权
公开(公告)号：USD688160S1
公开(公告)日：2013-08-20
申请号：US29409249
申请日：2011-12-21
申请人： Shuzo Akamine , Atsushi Hirose , Daisuke Iguchi , Masahiro Ookuni
设计人： Shuzo Akamine , Atsushi Hirose , Daisuke Iguchi , Masahiro Ookuni

6. 外观设计

USD680038S1 Rear bumper for an automobile 有权
公开(公告)号：USD680038S1
公开(公告)日：2013-04-16
申请号：US29409264
申请日：2011-12-21
申请人： Shuzo Akamine , Atsushi Hirose , Daisuke Iguchi , Masahiro Ookuni
设计人： Shuzo Akamine , Atsushi Hirose , Daisuke Iguchi , Masahiro Ookuni

7. 发明申请

US20120132965A1 Photoelectric Conversion Device And Electronic Device Having The Same 有权
标题翻译：具有相同的光电转换装置和电子装置
公开(公告)号：US20120132965A1
公开(公告)日：2012-05-31
申请号：US13365305
申请日：2012-02-03
申请人： Hideaki Shishido , Atsushi Hirose
发明人： Hideaki Shishido , Atsushi Hirose
IPC分类号： H01L27/148
CPC分类号： H01L27/1214 , G01J1/02 , G01J1/0209 , G01J1/42 , G01J1/44 , G05F3/262 , G09G3/3241 , H01L27/1266 , H01L27/14609 , H01L27/14687 , H04N5/2351
摘要： A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion device and an internal resistor is connected to each of the output side transistors 105a to 105c in series. The sum of currents which flow through the plurality of transistors and the internal resistor is output, whereby a transistor with large amount of α can be driven in a linear range with low illuminance, and a transistor with small amount of α can be driven in a linear range with high illuminance, so that applicable illuminance range of the photoelectric conversion device can be widened.
摘要翻译：在通过放大光电流的电流镜电路101中，作为输出侧晶体管105a〜105c并联设置多个晶体管，其中沟道长度L与沟道宽度W，α= W / L的比例彼此不同的一个光电转换装置和一个内部电阻器串联连接到每个输出侧晶体管105a至105c。输出流过多个晶体管的电流和内部电阻器的总和，由此可以以低照度在线性范围内驱动具有大量α的晶体管，并且可以在a中驱动具有少量α的晶体管具有高照度的线性范围，可以扩大光电转换装置的适用照度范围。

8. 发明授权

US08049157B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08049157B2
公开(公告)日：2011-11-01
申请号：US12949301
申请日：2010-11-18
申请人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
发明人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
IPC分类号： H03F3/08 , H03K17/78 , H01J40/14 , H04N3/14 , H01L31/062
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

9. 发明申请

US20110147754A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110147754A1
公开(公告)日：2011-06-23
申请号：US12970460
申请日：2010-12-16
申请人： Toshiyuki ISA , Atsushi HIROSE
发明人： Toshiyuki ISA , Atsushi HIROSE
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/124 , H01L29/04 , H01L29/66765 , H01L29/78618 , H01L29/78648 , H01L29/78678
摘要： Disclosed is a thin film transistor including: a gate insulating layer covering a gate electrode; a microcrystalline semiconductor region over the gate insulating layer; a pair of amorphous semiconductor region over the microcrystalline semiconductor; a pair of impurity semiconductor layers over the amorphous semiconductor regions; and wirings over the impurity semiconductor layers. The microcrystalline semiconductor region has a surface having a projection and depression on the gate insulating layer side. The microcrystalline semiconductor region includes a first microcrystalline semiconductor region which is not covered with the amorphous regions and a second microcrystalline semiconductor region which is in contact with the amorphous semiconductor regions. A thickness d1 of the first microcrystalline semiconductor region is smaller than a thickness d2 of the second microcrystalline semiconductor region and d1 is greater than or equal to 30 nm.
摘要翻译：公开了一种薄膜晶体管，包括：覆盖栅电极的栅极绝缘层; 栅极绝缘层上的微晶半导体区域; 微晶半导体上的一对非晶半导体区域; 在所述非晶半导体区域上的一对杂质半导体层; 以及杂质半导体层上的布线。微晶半导体区域具有在栅极绝缘层侧具有突出和凹陷的表面。微晶半导体区域包括未被无定形区域覆盖的第一微晶半导体区域和与非晶半导体区域接触的第二微晶半导体区域。第一微晶半导体区域的厚度d1小于第二微晶半导体区域的厚度d2，d1大于或等于30nm。

10. 发明申请

US20110062543A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110062543A1
公开(公告)日：2011-03-17
申请号：US12949301
申请日：2010-11-18
申请人： Kazuo NISHI , Tatsuya ARAO , Atsushi HIROSE , Yuusuke SUGAWARA , Naoto KUSUMOTO , Daiki YAMADA , Hidekazu TAKAHASHI
发明人： Kazuo NISHI , Tatsuya ARAO , Atsushi HIROSE , Yuusuke SUGAWARA , Naoto KUSUMOTO , Daiki YAMADA , Hidekazu TAKAHASHI
IPC分类号： H01L31/06
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

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