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    • 6. 发明授权
    • Broadband transition from stripline to substrate integrated waveguide
    • US10916823B1
    • 2021-02-09
    • US16584438
    • 2019-09-26
    • BENCHMARK ELECTRONICS, INC.
    • Francisco Iwao Hirata
    • H01P5/107H01P3/12H01P3/08H01P1/208
    • A device having a stripline to substrate integrated waveguide (SIW) transition structure has a substrate having a top surface and a bottom surface. A first metal ground layer is formed on the top surface of the substrate. A second metal ground layer is formed on the bottom surface of the substrate. A set of metallic vias are used to connect both ground layers. The stripline to SIW transition structure is embedded within the substrate between the first metal ground layer and the second metal ground layer. The stripline to SIW transition structure has a first transmission line embedded within the substrate. An impedance transformer is coupled to one end of the first transmission line. A coupling structure is coupled to the impedance transformer. The coupling structure has a pair of transmission lines. The pair of transmission lines diverge outward and upward from the impedance transformer. An isolation device is used to isolate EM fields from bifurcation of the pair of transmission lines and EM fields located at the end of these transmission lines. At least one terminating via is attached to terminal ends of the pair of transmission lines. Sidewalls are formed on each side of the stripline to SIW transition structure.