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1. 发明申请

US20050266691A1 Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch chemistry 审中-公开
标题翻译：在碳氟化合物蚀刻化学中使用H2添加剂进行碳掺杂Si氧化物蚀刻
公开(公告)号：US20050266691A1
公开(公告)日：2005-12-01
申请号：US11126053
申请日：2005-05-09
申请人： Binxi Gu , Gerardo Delgadino , Yan Ye , Mike Chen
发明人： Binxi Gu , Gerardo Delgadino , Yan Ye , Mike Chen
IPC分类号： B44C1/22 , H01L21/027 , H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/0276 , H01L21/31138 , H01L21/76802 , H01L21/76808 , H01L21/76829
摘要： Certain embodiments include an etching method including providing an etch material, applying a gas mixture including hydrogen, forming a plasma, and etching the etch material. The etch material can include a low-k dielectric material. The gas mixture can include a hydrogen gas, a hydrogen-free fluorocarbon, and a nitrogen gas, and further include one or more of a hydrofluorocarbon gas, an inert gas, and/or a carbon monoxide gas. The hydrogen gas can be a diatomic hydrogen, a hydrocarbon, a silane and/or a fluorine-free hydrogen gas, including H2, CH4, C2H4, NH3, and/or H2O gases. The hydrogen-free fluorocarbon gas can be a CxFy gas (where x≧1 and Y≧1) and the hydrofluorocarbon gas can be a CxHyFz gas (where x≧1, y≧1 and z≧1). The gas mixture can be free of oxygen. Embodiments can include reduced pressures, reduced hydrogen flow rates and one or more plasma frequencies.
摘要翻译：某些实施例包括蚀刻方法，包括提供蚀刻材料，施加包括氢气的气体混合物，形成等离子体，以及蚀刻蚀刻材料。蚀刻材料可以包括低k电介质材料。气体混合物可以包括氢气，无氢碳氟化合物和氮气，并且还包括氢氟烃气体，惰性气体和/或一氧化碳气体中的一种或多种。氢气可以是双原子氢，烃，硅烷和/或无氟氢气，包括H 2，CH 4，C 2 H 4，NH 3和/或H 2 O 2气体。无氢碳氟化合物气体可以是气体（其中x> = 1且Y> = 1），并且氢氟烃气体可以是C _{= 1，y> = 1，z> = 1）。气体混合物可以没有氧气。实施例可以包括减压，降低氢气流速和一个或多个等离子体频率。}

2. 发明授权

US07585778B2 Method of etching an organic low-k dielectric material 失效
标题翻译：蚀刻有机低k电介质材料的方法
公开(公告)号：US07585778B2
公开(公告)日：2009-09-08
申请号：US11691930
申请日：2007-03-27
申请人： Chang-Lin Hsieh , Binxi Gu
发明人： Chang-Lin Hsieh , Binxi Gu
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , H01L21/6708
摘要： A method of etching organic low-k dielectric materials is provided herein. In one embodiment, a method of etching organic low-k dielectric materials includes placing a substrate comprising an exposed organic low-k dielectric material in an etch reactor; supplying a process gas comprising an oxygen-containing gas, a nitrogen-containing gas, and methane (CH4); and forming a plasma from the process gas to etch the organic low-k dielectric material. The organic low-k dielectric material may include polymer-based low-k dielectric materials, photoresists, or organic polymers. The oxygen-containing gas may be oxygen (O2) and the nitrogen-containing gas may be nitrogen (N2).
摘要翻译：本文提供了一种蚀刻有机低k电介质材料的方法。在一个实施例中，蚀刻有机低k电介质材料的方法包括将包含暴露的有机低k电介质材料的衬底放置在蚀刻反应器中; 提供包含含氧气体，含氮气体和甲烷（CH 4）的工艺气体; 以及从所述工艺气体形成等离子体以蚀刻所述有机低k电介质材料。有机低k介电材料可以包括基于聚合物的低k介电材料，光致抗蚀剂或有机聚合物。含氧气体可以是氧（O 2），含氮气体可以是氮气（N 2）。

3. 发明申请

US20090156012A1 METHOD FOR FABRICATING LOW K DIELECTRIC DUAL DAMASCENE STRUCTURES 审中-公开
标题翻译：制备低K电介质双组分结构的方法
公开(公告)号：US20090156012A1
公开(公告)日：2009-06-18
申请号：US11954550
申请日：2007-12-12
申请人： CHANG-LIN HSIEH , BINXI GU , JIE YUAN , HUI XIONG DAI , ROBIN CHEUNG , SUBHASH DESHMUKH
发明人： CHANG-LIN HSIEH , BINXI GU , JIE YUAN , HUI XIONG DAI , ROBIN CHEUNG , SUBHASH DESHMUKH
IPC分类号： H01L21/461
CPC分类号： H01L21/76808 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： Methods for forming dual damascene structures in low-k dielectric materials that facilitate reducing photoresist poison issues are provided herein. In some embodiments, such methods may include plasma etching a via through a first mask layer into a low-k dielectric material disposed on a substrate. The first mask layer may then be removed using a process including exposing the first mask layer to a first plasma comprising an oxygen containing gas and at least one of a dilutant gas or a passivation gas, and subsequently exposing the first mask layer to a second plasma comprising an oxygen containing gas and formed using one of either plasma bias power or plasma source power. An anti-reflective coating may then be deposited into the via and atop the low-k dielectric material. A trench may then be plasma etched through a second mask layer formed atop the anti-reflective coating into the low-k dielectric material.
摘要翻译：本文提供了在低k电介质材料中形成双重镶嵌结构的方法，其有助于减少光致抗蚀剂的毒性问题。在一些实施例中，这样的方法可以包括将通过第一掩模层的通孔等离子体蚀刻到设置在基板上的低k电介质材料。然后可以使用包括将第一掩模层暴露于包含含氧气体和稀释气体或钝化气体中的至少一种的第一等离子体的方法去除第一掩模层，并随后将第一掩模层暴露于第二等离子体包括含氧气体并且使用等离子体偏置功率或等离子体源功率之一来形成。然后可以将抗反射涂层沉积到低k电介质材料的通孔中。然后可以通过在抗反射涂层顶部形成低k电介质材料的第二掩模层等离子体蚀刻沟槽。

4. 发明申请

US20080237183A1 METHOD OF ETCHING AN ORGANIC LOW-K DIELECTRIC MATERIAL 失效
标题翻译：蚀刻有机低K电介质材料的方法
公开(公告)号：US20080237183A1
公开(公告)日：2008-10-02
申请号：US11691930
申请日：2007-03-27
申请人： CHANG-LIN HSIEH , Binxi Gu
发明人： CHANG-LIN HSIEH , Binxi Gu
IPC分类号： C23F1/00
CPC分类号： H01L21/31138 , H01L21/6708
摘要： A method of etching organic low-k dielectric materials is provided herein. In one embodiment, a method of etching organic low-k dielectric materials includes placing a substrate comprising an exposed organic low-k dielectric material in an etch reactor; supplying a process gas comprising an oxygen-containing gas, a nitrogen-containing gas, and methane (CH4); and forming a plasma from the process gas to etch the organic low-k dielectric material. The organic low-k dielectric material may include polymer-based low-k dielectric materials, photoresists, or organic polymers. The oxygen-containing gas may be oxygen (O2) and the nitrogen-containing gas may be nitrogen (N2).
摘要翻译：本文提供了一种蚀刻有机低k电介质材料的方法。在一个实施例中，蚀刻有机低k电介质材料的方法包括将包含暴露的有机低k电介质材料的衬底放置在蚀刻反应器中; 提供包含含氧气体，含氮气体和甲烷（CH 4 SO 4）的工艺气体; 以及从所述工艺气体形成等离子体以蚀刻所述有机低k电介质材料。有机低k介电材料可以包括基于聚合物的低k介电材料，光致抗蚀剂或有机聚合物。含氧气体可以是氧（O 2/2），含氮气体可以是氮气（N 2 O 2）。

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