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1. 发明申请

US20140231893A1 CAPACITOR AND PREPARATION METHOD THEREOF 有权
标题翻译：电容器及其制备方法
公开(公告)号：US20140231893A1
公开(公告)日：2014-08-21
申请号：US14130439
申请日：2012-08-02
申请人： Rengang Qin , Dejin Wang , Boyong He
发明人： Rengang Qin , Dejin Wang , Boyong He
IPC分类号： H01L49/02
CPC分类号： H01L28/75 , C23C16/345 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02271 , H01L28/40
摘要： A capacitor and a method of fabricating thereof are provided. A structure of low pressure tetraethyl orthosilicate-low pressure silicon nitride-low pressure tetraethyl orthosilicate is used in the capacitor to replace the oxide-nitride-oxide structure of the existing capacitor; the capacitor has a relatively high unit capacitance value. Furthermore, the structure of low pressure tetraethyl orthosilicate—low pressure silicon nitride—low pressure tetraethyl orthosilicate is fabricaited by low pressure chemical vapor deposition method at relatively low temperature; thus the heat produced in the whole process is relatively low, which is insufficient to make the semiconductor device shift or make the gate metal layer or the metallized silicon layer peel off. Accordingly, the capacitor and the method of fabricating the capacitor of the present invention can be well applied in the process of the 0.5 μm PIP capacitor or below 0.5 μm.
摘要翻译：提供电容器及其制造方法。在电容器中使用低压四乙基原硅酸盐低压氮化硅 - 低压四乙基原硅酸盐的结构来代替现有电容器的氧化物 - 氮化物 - 氧化物结构; 电容器具有相对高的单位电容值。此外，低压四乙基原硅酸盐低压氮化硅 - 低压四乙基原硅酸盐的结构是通过低温化学气相沉积法在较低的温度下制得的; 因此在整个过程中产生的热量相对较低，这不足以使半导体器件移位或使栅极金属层或金属化硅层剥离。因此，本发明的电容器和制造电容器的方法可以很好地应用于0.5μmPIP电容器或0.5μm以下的工艺。

2. 发明授权

US09391133B2 Capacitor and preparation method thereof 有权
标题翻译：电容器及其制备方法
公开(公告)号：US09391133B2
公开(公告)日：2016-07-12
申请号：US14130439
申请日：2012-08-02
申请人： Rengang Qin , Dejin Wang , Boyong He
发明人： Rengang Qin , Dejin Wang , Boyong He
IPC分类号： H01L49/02 , H01L21/02 , C23C16/34
CPC分类号： H01L28/75 , C23C16/345 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02271 , H01L28/40
摘要： A capacitor and a method of fabricating thereof are provided. A structure of low pressure tetraethyl orthosilicate—low pressure silicon nitride—low pressure tetraethyl orthosilicate is used in the capacitor to replace the oxide-nitride-oxide structure of the existing capacitor; the capacitor has a relatively high unit capacitance value. Furthermore, the structure of low pressure tetraethyl orthosilicate—low pressure silicon nitride—low pressure tetraethyl orthosilicate is fabricaited by low pressure chemical vapor deposition method at relatively low temperature; thus the heat produced in the whole process is relatively low, which is insufficient to make the semiconductor device shift or make the gate metal layer or the metallized silicon layer peel off. Accordingly, the capacitor and the method of fabricating the capacitor of the present invention can be well applied in the process of the 0.5 μm PIP capacitor or below 0.5 μm.
摘要翻译：提供电容器及其制造方法。在电容器中使用低压四乙基原硅酸盐低压氮化硅 - 低压四乙基原硅酸盐的结构来代替现有电容器的氧化物 - 氮化物 - 氧化物结构; 电容器具有相对高的单位电容值。此外，低压四乙基原硅酸盐低压氮化硅 - 低压四乙基原硅酸盐的结构是通过低温化学气相沉积法在较低的温度下制得的; 因此在整个过程中产生的热量相对较低，这不足以使半导体器件移位或使栅极金属层或金属化硅层剥离。因此，本发明的电容器和制造电容器的方法可以很好地应用于0.5μmPIP电容器或0.5μm以下的工艺。

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