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1. 发明授权

US08071455B2 Isolation structures for preventing photons and carriers from reaching active areas and methods of formation 有权
标题翻译：用于防止光子和载体到达有源区域的隔离结构和形成方法
公开(公告)号：US08071455B2
公开(公告)日：2011-12-06
申请号：US12424336
申请日：2009-04-15
申请人： Bryan G. Cole , Troy Sorensen
发明人： Bryan G. Cole , Troy Sorensen
IPC分类号： H01L21/225 , H01L21/385
CPC分类号： H01L27/1463 , H01L31/103
摘要： Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electrons originating in peripheral circuitry from reaching the active area. Where the substrate has a heavily-doped lower layer and an upper layer on it, the trench can extend through the upper layer to the lower layer. A thermal oxide can be grown on the trench walls. A liner can also be deposited on the sidewalls of each trench. A fill material having a high-extinction coefficient is then deposited over the liner. The liner can also be light absorbent so that both the liner and fill material block photons.
摘要翻译：集成电路的区域由在有源区域的外围包括至少一个隔离沟槽的结构隔离。沟槽深，至少延伸约0.5微米到衬底。隔离结构防止源自外围电路的光子和电子到达有源区。当衬底在其上具有重掺杂的下层和上层时，沟槽可以延伸通过上层到下层。热氧化物可以在沟槽壁上生长。衬垫也可以沉积在每个沟槽的侧壁上。然后将具有高消光系数的填充材料沉积在衬垫上。衬里也可以是轻的吸收剂，以便衬垫和填充材料阻挡光子。

2. 发明授权

US08013411B2 Method and structure to reduce optical crosstalk in a solid state imager 有权
标题翻译：减少固态成像仪中的光学串扰的方法和结构
公开(公告)号：US08013411B2
公开(公告)日：2011-09-06
申请号：US12004034
申请日：2007-12-20
申请人： Bryan G. Cole
发明人： Bryan G. Cole
IPC分类号： H01L31/062 , H01L31/113 , H01L31/0232 , H01L31/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14623 , H01L27/1463 , H01L27/14632 , H01L27/14683 , H01L27/14685 , H01L27/14687
摘要： Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the properties and performance of the imager array. In the resulting structure, the conserved sections absorb incident light. The patterned portions of conserved material provide additional light shielding for array pixels.
摘要翻译：减少固态成像器阵列光学串扰的方法和结构。在制造过程中先前已经被蚀刻掉并作为废物处理的像素材料层的部分被保留为保守的部分。这些保守的部分用于修改成像器阵列的属性和性能。在所得结构中，保守部分吸收入射光。保守材料的图案部分为阵列像素提供额外的光屏蔽。

3. 发明申请

US20090243021A1 ISOLATION STRUCTURES FOR PREVENTING PHOTONS AND CARRIERS FROM REACHING ACTIVE AREAS AND METHODS OF FORMATION 有权
标题翻译：用于防止光子和载体从达到活跃区域分离的结构和形成方法
公开(公告)号：US20090243021A1
公开(公告)日：2009-10-01
申请号：US12424336
申请日：2009-04-15
申请人： Bryan G. Cole , Troy Sorensen
发明人： Bryan G. Cole , Troy Sorensen
IPC分类号： H01L31/02
CPC分类号： H01L27/1463 , H01L31/103
摘要： Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electrons originating in peripheral circuitry from reaching the active area. Where the substrate has a heavily-doped lower layer and an upper layer on it, the trench can extend through the upper layer to the lower layer. A thermal oxide can be grown on the trench walls. A liner can also be deposited on the sidewalls of each trench. A fill material having a high-extinction coefficient is then deposited over the liner. The liner can also be light absorbent so that both the liner and fill material block photons.
摘要翻译：集成电路的区域由在有源区域的外围包括至少一个隔离沟槽的结构隔离。沟槽是深的，延伸至少约0.5μm的衬底。隔离结构防止源自外围电路的光子和电子到达有源区。当衬底在其上具有重掺杂的下层和上层时，沟槽可以延伸通过上层到下层。热氧化物可以在沟槽壁上生长。衬垫也可以沉积在每个沟槽的侧壁上。然后将具有高消光系数的填充材料沉积在衬垫上。衬里也可以是轻的吸收剂，以便衬垫和填充材料阻挡光子。

4. 发明授权

US07534982B2 Reduced imager crosstalk and pixel noise using extended buried contacts 有权
标题翻译：使用扩展掩埋触点降低成像器串扰和像素噪声
公开(公告)号：US07534982B2
公开(公告)日：2009-05-19
申请号：US11148554
申请日：2005-06-09
申请人： Bryan G. Cole
发明人： Bryan G. Cole
IPC分类号： H01L27/00
CPC分类号： H01L27/14621
摘要： Methods and structures to reduce the occurrence of crosstalk and pixel noise in solid state imager arrays. In an exemplary embodiment, a section of a layer patterned to form polysilicon buried-contacts in the pixel structure is also patterned to be disposed over the active, photosensor portion of the pixel. The section of the buried-contact layer covering the photosensor portion of the pixel serves to filter the light striking the buried-contact layer before the light strikes the photosensor. The polysilicon light filter reduces the amount of stray light entering from the adjacent pixels without adding significant processing complexity.
摘要翻译：减少固态成像器阵列串扰和像素噪声发生的方法和结构。在示例性实施例中，图案化以在像素结构中形成多晶硅掩埋接触的层的部分也被图案化以设置在像素的有源光电传感器部分上方。覆盖像素的光电传感器部分的掩埋接触层的部分用于在光照射光传感器之前过滤入射接触层的光。多晶硅光滤波器减少了从相邻像素进入的杂散光量，而不增加显着的处理复杂度。

5. 发明申请

US20080173965A1 Method and structure to reduce optical crosstalk in a solid state imager 有权
标题翻译：减少固态成像仪中的光学串扰的方法和结构
公开(公告)号：US20080173965A1
公开(公告)日：2008-07-24
申请号：US12004034
申请日：2007-12-20
申请人： Bryan G. Cole
发明人： Bryan G. Cole
IPC分类号： H01L31/0216
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14623 , H01L27/1463 , H01L27/14632 , H01L27/14683 , H01L27/14685 , H01L27/14687
摘要： Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the properties and performance of the imager array. In the resulting structure, the conserved sections absorb incident light. The patterned portions of conserved material provide additional light shielding for array pixels.
摘要翻译：减少固态成像器阵列光学串扰的方法和结构。在制造过程中先前已经被蚀刻掉并作为废物处理的像素材料层的部分被保留为保守的部分。这些保守的部分用于修改成像器阵列的属性和性能。在所得结构中，保守部分吸收入射光。保守材料的图案部分为阵列像素提供额外的光屏蔽。

6. 发明申请

US20090200628A1 REDUCED IMAGER CROSSTALK AND PIXEL NOISE USING EXTENDED BURIED CONTACTS 有权
标题翻译：使用扩展的BURIED联系人减少图像镜像和像素噪声
公开(公告)号：US20090200628A1
公开(公告)日：2009-08-13
申请号：US12425771
申请日：2009-04-17
申请人： Bryan G. Cole
发明人： Bryan G. Cole
IPC分类号： H01L31/0232 , H01L27/00 , H01L21/02 , H01L29/04
CPC分类号： H01L27/14621
摘要： Methods and structures to reduce the occurrence of crosstalk and pixel noise in solid state imager arrays. In an exemplary embodiment, a section of a layer patterned to form polysilicon buried-contacts in the pixel structure is also patterned to be disposed over the active, photosensor portion of the pixel. The section of the buried-contact layer covering the photosensor portion of the pixel serves to filter the light striking the buried-contact layer before the light strikes the photosensor. The polysilicon light filter reduces the amount of stray light entering from the adjacent pixels without adding significant processing complexity.
摘要翻译：减少固态成像器阵列串扰和像素噪声发生的方法和结构。在示例性实施例中，图案化以在像素结构中形成多晶硅掩埋接触的层的部分也被图案化以设置在像素的有源光电传感器部分上方。覆盖像素的光电传感器部分的掩埋接触层的部分用于在光照射光传感器之前过滤入射接触层的光。多晶硅光滤波器减少了从相邻像素进入的杂散光量，而不增加显着的处理复杂度。

7. 发明授权

US07332759B2 Method and structure to reduce optical crosstalk in a solid state imager 有权
公开(公告)号：US07332759B2
公开(公告)日：2008-02-19
申请号：US11699506
申请日：2007-01-30
申请人： Bryan G. Cole
发明人： Bryan G. Cole
IPC分类号： H01L31/062 , H01L31/113 , H01L31/0232 , H01L31/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14623 , H01L27/1463 , H01L27/14632 , H01L27/14683 , H01L27/14685 , H01L27/14687
摘要： Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the properties and performance of the imager array. In the resulting structure, the conserved sections absorb incident light. The patterned portions of conserved material provide additional light shielding for array pixels.

8. 发明授权

US07736992B2 Isolation trench geometry for image sensors 有权
标题翻译：图像传感器的隔离沟槽几何
公开(公告)号：US07736992B2
公开(公告)日：2010-06-15
申请号：US11443259
申请日：2006-05-31
申请人： Bryan G. Cole , Howard E. Rhodes
发明人： Bryan G. Cole , Howard E. Rhodes
IPC分类号： H01L21/76
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14689
摘要： A pixel cell including a substrate having a top surface. A photo-conversion device is at a surface of the substrate and a trench is in the substrate adjacent the photo-conversion device. The trench has sidewalls and a bottom. At least one sidewall is angled less than approximately 85 degrees from the plane of the top surface of the substrate.
摘要翻译：一种像素单元，包括具有顶面的基板。光转换装置位于基板的表面，并且沟槽位于与光转换装置相邻的基板中。沟槽有侧壁和底部。至少一个侧壁与衬底顶表面的平面成角度小于大约85度。

9. 发明授权

US07534691B2 Isolation structures for preventing photons and carriers from reaching active areas and methods of formation 有权
标题翻译：用于防止光子和载体到达有源区域的隔离结构和形成方法
公开(公告)号：US07534691B2
公开(公告)日：2009-05-19
申请号：US11495547
申请日：2006-07-31
申请人： Bryan G. Cole , Troy Sorensen
发明人： Bryan G. Cole , Troy Sorensen
IPC分类号： H01L21/225 , H01L21/385 , H01L31/118
CPC分类号： H01L27/1463 , H01L31/103
摘要： Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electrons originating in peripheral circuitry from reaching the active area. Where the substrate has a heavily-doped lower layer and an upper layer on it, the trench can extend through the upper layer to the lower layer. A thermal oxide can be grown on the trench walls. A liner can also be deposited on the sidewalls of each trench. A fill material having a high-extinction coefficient is then deposited over the liner. The liner can also be light absorbent so that both the liner and fill material block photons.
摘要翻译：集成电路的区域由在有源区域的外围包括至少一个隔离沟槽的结构隔离。沟槽是深的，延伸至少约0.5μm的衬底。隔离结构防止源自外围电路的光子和电子到达有源区。当衬底在其上具有重掺杂的下层和上层时，沟槽可以延伸通过上层到下层。热氧化物可以在沟槽壁上生长。衬垫也可以沉积在每个沟槽的侧壁上。然后将具有高消光系数的填充材料沉积在衬垫上。衬里也可以是轻的吸收剂，以便衬垫和填充材料阻挡光子。

10. 发明授权

US07335525B2 Method and structure to reduce optical crosstalk in a solid state imager 有权
公开(公告)号：US07335525B2
公开(公告)日：2008-02-26
申请号：US11699354
申请日：2007-01-30
申请人： Bryan G. Cole
发明人： Bryan G. Cole
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14623 , H01L27/1463 , H01L27/14632 , H01L27/14683 , H01L27/14685 , H01L27/14687
摘要： Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the properties and performance of the imager array. In the resulting structure, the conserved sections absorb incident light. The patterned portions of conserved material provide additional light shielding for array pixels.

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