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1. 发明授权

US07906195B2 Super-resolution material and high density optical information storage medium using same 有权
标题翻译：超分辨率材料和高密度光信息存储介质使用相同
公开(公告)号：US07906195B2
公开(公告)日：2011-03-15
申请号：US11949927
申请日：2007-12-04
申请人： Byung-Ki Cheong , Taek Sung Lee , Hyun Seok Lee , Jeung-Hyun Jeong , Suyoun Lee , Won Mok Kim
发明人： Byung-Ki Cheong , Taek Sung Lee , Hyun Seok Lee , Jeung-Hyun Jeong , Suyoun Lee , Won Mok Kim
IPC分类号： B32B3/02
CPC分类号： G11B7/24 , G02F1/3523 , G11B7/252 , Y10T428/21 , Y10T428/26
摘要： A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).
摘要翻译：一种用于记录和再现光学信息的超分辨率材料，包括具有随着入射辐射强度增加而增加的透射率的半导体材料，以及一种或多种选自氮（N），氧（O ），碳（C）和硼（B）。

2. 发明授权

US07851828B2 Phase change memory cell with transparent conducting oxide for electrode contact material 有权
标题翻译：具有透明导电氧化物的相变存储单元，用于电极接触材料
公开(公告)号：US07851828B2
公开(公告)日：2010-12-14
申请号：US11290712
申请日：2005-11-29
申请人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Taek Sung Lee , In Ho Kim , Kyeong Seok Lee , Won Mok Kim , Dong-Ho Ahn , Ki-Bum Kim
发明人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Taek Sung Lee , In Ho Kim , Kyeong Seok Lee , Won Mok Kim , Dong-Ho Ahn , Ki-Bum Kim
IPC分类号： H01L29/768
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144
摘要： The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
摘要翻译：本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性，导热性低，热稳定性好。可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。

3. 发明授权

US07632456B2 Phase change material for high density non-volatile memory 有权
标题翻译：高密度非易失性存储器的相变材料
公开(公告)号：US07632456B2
公开(公告)日：2009-12-15
申请号：US11411558
申请日：2006-04-25
申请人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Han Ju Jung , Taek Sung Lee , In Ho Kim , Won Mok Kim , Kyeong Seok Lee
发明人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Han Ju Jung , Taek Sung Lee , In Ho Kim , Won Mok Kim , Kyeong Seok Lee
IPC分类号： C22C12/00 , B41M5/26 , G11B7/24
CPC分类号： H01L45/1233 , C01B19/002 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1625 , Y10T428/21
摘要： The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
摘要翻译：本发明提供了一种相变非挥发性记忆材料，其包括基材和至少一种选自硼，碳，氮和氧的非金属光元素，其中所述基材具有对应于对于每个构成元素，具有最低熔点或共晶熔化的类型的均匀熔融在±0.15原子级数范围内，从而具有600℃或更低的熔融温度。可以利用根据本发明的相变非易失性存储材料来降低复位/设置操作所需的电力以及存储单元之间的热干扰。

4. 发明授权

US07233054B1 Phase change material and non-volatile memory device using the same 有权
标题翻译：相变材料和非易失性存储器件使用相同
公开(公告)号：US07233054B1
公开(公告)日：2007-06-19
申请号：US11290713
申请日：2005-11-29
申请人： Dong Ho Anh , Tae-Yon Lee , Ki Bum Kim , Byung-ki Cheong , Dae-Hwan Kang , Jeung-hyun Jeong , In Ho Kim , Taek Sung Lee , Won Mok Kim
发明人： Dong Ho Anh , Tae-Yon Lee , Ki Bum Kim , Byung-ki Cheong , Dae-Hwan Kang , Jeung-hyun Jeong , In Ho Kim , Taek Sung Lee , Won Mok Kim
IPC分类号： H01L29/12
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
摘要翻译：本发明提供了一种相变存储器单元，其包括（>> Sb> Te>>>>>>（（（（（（（（固体溶液由Ge-Sb-Si固溶体形成， Te基合金和三元金属合金RS-Te与Ge-Sb-Te基合金具有相同的晶体结构。根据本发明的非易失性相变存储单元提供了许多优点，例如高速度，高数据保持和多位操作。

5. 发明申请

US20070001160A1 Phase change material for high density non-volatile memory 有权
标题翻译：高密度非易失性存储器的相变材料
公开(公告)号：US20070001160A1
公开(公告)日：2007-01-04
申请号：US11411558
申请日：2006-04-25
申请人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Han Ju Jung , Taek Sung Lee , In Ho Kim , Won Mok Kim , Kyeong Seok Lee
发明人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Han Ju Jung , Taek Sung Lee , In Ho Kim , Won Mok Kim , Kyeong Seok Lee
IPC分类号： H01L47/00
CPC分类号： H01L45/1233 , C01B19/002 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1625 , Y10T428/21
摘要： The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
摘要翻译：本发明提供了一种相变非挥发性记忆材料，其包括基材和至少一种选自硼，碳，氮和氧的非金属光元素，其中所述基材具有对应于对于每个构成元素，具有最低熔点或共晶熔化的类型的均匀熔融在±0.15原子级数范围内，从而具有600℃或更低的熔融温度。可以利用根据本发明的相变非易失性存储器材料来降低复位/设置操作所需的电力以及存储单元之间的热干扰。

6. 发明授权

US06961300B2 Optical recording medium having first and second super-resolution layers 失效
标题翻译：具有第一和第二超分辨率层的光学记录介质
公开(公告)号：US06961300B2
公开(公告)日：2005-11-01
申请号：US10186016
申请日：2002-06-28
申请人： Byung-ki Cheong , Soon-Gwang Kim , Won-Mok Kim , Moonkyo Chung , Taek-Sung Lee , Sung-Jin Park , Sung-Hun Lee , Sung-Hun Cho
发明人： Byung-ki Cheong , Soon-Gwang Kim , Won-Mok Kim , Moonkyo Chung , Taek-Sung Lee , Sung-Jin Park , Sung-Hun Lee , Sung-Hun Cho
IPC分类号： G11B7/004 , G11B7/243 , G11B7/246 , G11B7/24
CPC分类号： G11B7/246 , G11B7/24 , G11B7/243 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： The present invention provides an optical recording medium in which the spot size of incident laser beam, focused on the medium by a far-field optic system characterized by λ and NA, is further reduced and maintained below the diffraction-limited size by means of material characteristics of the medium while reproducing from and recording on the information layer of the recording medium, thus making it possible to record and reproduce a high density of information exceeding the resolution limit of the optic system.A high density optical recording medium according to the present invention adopts a combination of two different super-resolution layers of mutually complementary optical characteristics with increasing light power.The combination of two super-resolution layers is made in either of two different types: for one type, each of the two super-resolution layers, having a respective threshold light intensity (or temperature) for the onset of change in optical transmittance, produces an increasing spot size of the transmitted beam with increasing light power once a respective threshold light intensity (or temperature) is exceeded, and for the other type, one layer produces an increasing spot size of the transmitted beam with increasing light power whereas the other layer exhibits a reverse trend.
摘要翻译：本发明提供了一种光记录介质，其中通过以λ和NA为特征的远场光学系统聚焦在介质上的入射激光束的光斑尺寸进一步减小并通过材料保持在衍射受限尺寸以下在从记录介质的信息层再现和记录介质的同时，能够记录和再现超过光学系统的分辨率极限的高密度信息。根据本发明的高密度光学记录介质采用具有增加的光功率的互补光学特性的两个不同的超分辨率层的组合。两个超分辨率层的组合以两种不同类型中的任一种制成：对于一种类型，两个超分辨率层中的每一个具有用于光透射率变化开始的相应的阈值光强度（或温度），产生一旦超过相应的阈值光强度（或温度），一旦增加了光功率，透射光束的斑点尺寸就会增加，而另一种类型，一层产生随着光功率的增加的透射光束的光斑尺寸，而另一层呈现逆向趋势。

7. 发明授权

US09252181B2 Filterless color image sensor 有权
标题翻译：无滤色彩图像传感器
公开(公告)号：US09252181B2
公开(公告)日：2016-02-02
申请号：US13456991
申请日：2012-04-26
申请人： Su Youn Lee , Byung Ki Cheong , Doo Seok Jeong
发明人： Su Youn Lee , Byung Ki Cheong , Doo Seok Jeong
IPC分类号： H01L27/146
CPC分类号： H01L27/14647
摘要： A color image sensor is disclosed. In one aspect, the color image sensor includes: a photo-sensitive cell having a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode; and an image sensing circuit for measuring the wavelength or intensity of incident light based on an electric characteristic value generated from the photo-sensitive cell.
摘要翻译：公开了彩色图像传感器。一方面，彩色图像传感器包括：具有位于下电极和上电极之间的下电极，上电极和硫族化物材料的光敏电池; 以及用于基于从感光单元产生的电特性值来测量入射光的波长或强度的图像感测电路。

8. 发明申请

US20130092818A1 COLOR IMAGE SENSOR 有权
标题翻译：彩色图像传感器
公开(公告)号：US20130092818A1
公开(公告)日：2013-04-18
申请号：US13456991
申请日：2012-04-26
申请人： Su Youn Lee , Byung Ki Cheong , Doo Seok Jeong
发明人： Su Youn Lee , Byung Ki Cheong , Doo Seok Jeong
IPC分类号： H01L27/146
CPC分类号： H01L27/14647
摘要： A color image sensor is disclosed. In one aspect, the color image sensor includes: a photo-sensitive cell having a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode; and an image sensing circuit for measuring the wavelength or intensity of incident light based on an electric characteristic value generated from the photo-sensitive cell.
摘要翻译：公开了彩色图像传感器。一方面，彩色图像传感器包括：具有位于下电极和上电极之间的下电极，上电极和硫族化物材料的光敏电池; 以及用于基于从感光单元产生的电特性值来测量入射光的波长或强度的图像感测电路。

9. 发明申请

US20060113573A1 Phase change memory cell with transparent conducting oxide for electrode contact layer 有权
标题翻译：具有用于电极接触层的透明导电氧化物的相变存储单元
公开(公告)号：US20060113573A1
公开(公告)日：2006-06-01
申请号：US11290712
申请日：2005-11-29
申请人： Byung-ki Cheong , Jeung-hyun Jeong , Dao-Hwan Kang , Taek Sung Lee , In Ho Kim , Kyeong Seok Lee , Won Mok Kim , Dong-Ho Ahn , Ki-Burn Kim
发明人： Byung-ki Cheong , Jeung-hyun Jeong , Dao-Hwan Kang , Taek Sung Lee , In Ho Kim , Kyeong Seok Lee , Won Mok Kim , Dong-Ho Ahn , Ki-Burn Kim
IPC分类号： H01L29/768
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144
摘要： The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
摘要翻译：本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性，导热性低，热稳定性好。可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。

10. 发明申请

US20050105864A1 Waveguide type optical device using large 3rd non-linear optical material and method for operating the same 有权
标题翻译：使用大型第3非线性光学材料的波导型光学器件及其操作方法
公开(公告)号：US20050105864A1
公开(公告)日：2005-05-19
申请号：US10987709
申请日：2004-11-12
申请人： Taek-Sung Lee , Kyeong Lee , Won-Mok Kim , Byung-Ki Cheong , In-Ho Kim
发明人： Taek-Sung Lee , Kyeong Lee , Won-Mok Kim , Byung-Ki Cheong , In-Ho Kim
IPC分类号： G02B6/12 , G02F1/35 , G02B6/00
CPC分类号： G02F1/3517 , G02B2006/12142 , G02B2006/12145 , G02B2006/12147 , G02F1/3521
摘要： Disclosed is a waveguide type optical device utilizing a nonlinear refractive index change according to a large 3rd order nonlinear optical phenomenon. The waveguide type optical device includes a signal beam waveguide through which a signal beam propagates; and a pump beam waveguide through which a pump beam propagates, wherein the pump beam waveguide is disposed adjacent to the signal beam waveguide so that the pump beam can be coupled to the signal beam waveguide, the signal beam waveguide is made of nonlinear optical materials with large 3rd order nonlinear optical property and the pump beam waveguide is made of linear optical materials, and the wavelength range of the signal beam is different from that of the pump beam. By such a structure, the pump beam is coupled to one arm of the signal beam waveguide, thereby generating a 3rd nonlinear phenomenon on one arm of the waveguide through which the signal beam passes. Therefore, the waveguide optical device which implements an all-optical communication device operating as an optical device and can be integrated is provided.
摘要翻译：公开了一种使用根据大的3阶非线性光学现象的非线性折射率变化的波导型光学器件。波导型光学器件包括信号光束波导，信号光束通过该波导波导传播; 以及泵浦光束通过其传播的泵浦波导，其中所述泵浦波导与所述信号光束波导相邻设置，使得所述泵浦波束可以耦合到所述信号波导管，所述信号波束波导由非线性光学材料制成，大的3阶非线性光学特性和泵浦波导由线性光学材料制成，信号光束的波长范围与泵浦光束的波长范围不同。通过这种结构，泵浦光束耦合到信号光束波导的一个臂，从而在信号光束通过的波导的一个臂上产生第三非线性现象。因此，提供了实现作为光学装置工作并可以集成的全光通信装置的波导光学装置。

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