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1. 发明授权

US11486059B2 Method and device for stabilizing precursor fibers for the production of carbon fibers 有权
公开(公告)号：US11486059B2
公开(公告)日：2022-11-01
申请号：US16970411
申请日：2019-03-11
申请人： CENTROTHERM INTERNATIONAL AG
发明人： Andreas Keller , Gunter Fauth , Uwe Ziegler
IPC分类号： B29C71/02 , F27B5/04 , F27B9/04 , F27B9/28 , F27D7/06 , D01F9/22 , D01D10/02 , D01F9/17 , D01F9/32 , B29C71/00 , D02J13/00 , F27B9/12
摘要： The invention relates to a method and to a device for stabilizing precursor fibers for the production of carbon fibers. In the method, precursor fibers are first heated to a first temperature and held at the temperature for a predefined duration. Subsequently, the precursor fibers are heated to at least one second temperature, which is higher than the first temperature, and held at said temperature for a predefined duration. During each heating and between the heating steps, the precursor fibers are in a gas atmosphere having a negative pressure in the range between 12 mbar and 300 mbar and having an oxygen partial pressure of 2.5 to 63 mbar. The device has at least one evacuable, elongate vacuum chamber for feeding the precursor fibers through, at least two lock units and at least one heating unit. At least one lock unit is used for the sealed insertion of precursor fibers into the at least one vacuum chamber, while at least one other lock unit is used for the sealed removal of precursor fibers from the at least one vacuum chamber. The heating unit has at least two individually controllable heating elements, which are suitable for heating the at least one vacuum chamber to at least two different temperatures in heating zones which are adjacent in the longitudinal direction.

2. 发明申请

US20220254609A1 PLASMA GENERATOR, PLASMA TREATMENT DEVICE, AND METHOD FOR PROVIDING ELECTRIC POWER IN A PULSED MANNER 有权
公开(公告)号：US20220254609A1
公开(公告)日：2022-08-11
申请号：US17731774
申请日：2022-04-28
申请人： CENTROTHERM INTERNATIONAL AG
发明人： Sebastian Hubertus Schulz , Thomas Pernau , Florian Nachbauer , Felix Walk
IPC分类号： H01J37/32 , H05H1/46
摘要： A plasma generator and a method for the pulsed provision of electrical power having a frequency of at least 40 KHz to at least two process chambers are described. The plasma generator comprises: a control unit configured to obtain and evaluate process data about processes in the at least two process chambers; a controllable power supply having an output, the controllable power supply being configured to output a direct current at a predetermined voltage and/or intensity at its output in response to a control signal from the control unit; and a switching unit having a first input connected to the output of the power supply and having at least two switching unit outputs for respective connection to one of the at least two process chambers. The switching unit is configured to form, from a direct current at the input, an alternating current having a predetermined frequency of at least 40 KHz as an output signal and to selectively output the output signal as a pulse for a predetermined pulse duration to one of the switching unit outputs in response to a control signal from the control unit. The control unit is configured to coordinate power requirements of the at least two process chambers and to drive the power supply and the switching unit such that at the respective switching unit outputs communicating with the process chambers, substantially the power corresponding to the power requirements is provided as pulses over a period of time, wherein the pulses of the respective process chambers are temporally offset from each other such that the process chambers can be operated simultaneously.

3. 发明申请

US20190259905A1 Method For Passivating A Surface Of A Semiconductor Material And Semiconductor Substrate 审中-公开
公开(公告)号：US20190259905A1
公开(公告)日：2019-08-22
申请号：US16334080
申请日：2017-09-15
申请人： CENTROTHERM INTERNATIONAL AG
发明人： JENS-UWE FUCHS , WOLFGANG JOOSS , THOMAS PERNAU , VIET XUAN NGUYEN
IPC分类号： H01L31/18 , H01L23/31 , H01L21/02 , H01L31/0216
摘要： A method for passivating a surface of a semiconductor material includes forming a layer stack having an aluminum oxide layer and an outer coating on the surface of the semiconductor material. The aluminum oxide layer and the outer coating are respectively formed in vacuum processes in which a vacuum is present. The vacuum is maintained between the forming of the aluminum oxide layer and the forming of the outer coating. Hydrogen and oxygen are supplied after the forming of the aluminum oxide layer and before the forming of the outer coating. A semiconductor substrate is also provided.

4. 发明申请

US20180277710A1 METHOD AND DEVICE FOR PASSIVATING DEFECTS IN SEMICONDUCTOR SUBSTRATES 审中-公开
公开(公告)号：US20180277710A1
公开(公告)日：2018-09-27
申请号：US15762601
申请日：2016-09-20
申请人： CENTROTHERM INTERNATIONAL AG
发明人： Thomas Pernau , Peter Völk , Hans-Peter Elser , Wolfgang Scheiffele , Andreas Reichart , Olaf Romer , Wolfgang Jooss
IPC分类号： H01L31/18 , H01L21/322
CPC分类号： H01L31/1868 , H01L21/3221 , H01L21/67109 , H01L21/67115 , H01L21/67173 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： The invention relates to methods and an apparatus for passivating defects of a semiconductor substrate, in particular a silicon based solar cell. According to the method, the substrate is irradiated with electromagnetic radiation during a first process phase, wherein the radiation directed onto the substrate has wavelengths at least in the region below 1200 nm and an intensity of at least 8000 Watt/m2. This can lead to a heating of the substrate, or a temperature control can be provided. Subsequently, the substrate is irradiated with electromagnetic radiation during a temperature-holding phase following the first process phase, wherein the radiation directed onto the substrate has wavelengths primarily in the region below 1200 nm and an intensity of at least 8000 Watt/m2, while a side of the substrate facing away from a source of the electromagnetic radiation is cooled via a contact with a support cooled by a cooling device. The apparatus comprises a continuous furnace having an elongated process chamber with at least three zones arranged in the sequence of a first processing zone, a temperature-holding zone and a cooling zone, and at least one transport unit for receiving and transporting the substrate through the zones. The apparatus further comprises at least one first radiation source which can irradiate electromagnetic radiation onto a section of the transport unit located in the first process zone, and which is configured to generate radiation having wavelengths at least in the region below 1200 nm and an intensity of at least 8000 Watt/m2, and at least one second radiation source which can irradiate electromagnetic radiation onto a section of the transport unit located in the temperature-holding zone, and which is configured to generate radiation having wavelengths at least in the region below 1200 nm and an intensity of at least 8000 Watt/m2. At least one cooling unit is arranged in heat-conducting contact with the section of the transport unit positioned in the temperature-holding zone.

5. 发明授权

US11355316B2 Plasma generator, plasma treatment device, and method for providing electric power in a pulsed manner 有权
公开(公告)号：US11355316B2
公开(公告)日：2022-06-07
申请号：US16498728
申请日：2018-03-29
申请人： CENTROTHERM INTERNATIONAL AG
发明人： Sebastian Hubertus Schulz , Thomas Pernau , Florian Nachbauer , Felix Walk
IPC分类号： H01J37/32 , H05H1/46
摘要： A plasma generator and a method for the pulsed provision of electrical power having a frequency of at least 40 KHz to at least two process chambers are described. The plasma generator comprises: a control unit configured to obtain and evaluate process data about processes in the at least two process chambers; a controllable power supply having an output, the controllable power supply being configured to output a direct current at a predetermined voltage and/or intensity at its output in response to a control signal from the control unit; and a switching unit having a first input connected to the output of the power supply and having at least two switching unit outputs for respective connection to one of the at least two process chambers. The switching unit is configured to form, from a direct current at the input, an alternating current having a predetermined frequency of at least 40 KHz as an output signal and to selectively output the output signal as a pulse for a predetermined pulse duration to one of the switching unit outputs in response to a control signal from the control unit. The control unit is configured to coordinate power requirements of the at least two process chambers and to drive the power supply and the switching unit such that at the respective switching unit outputs communicating with the process chambers, substantially the power corresponding to the power requirements is provided as pulses over a period of time, wherein the pulses of the respective process chambers are temporally offset from each other such that the process chambers can be operated simultaneously.

6. 发明申请

US20210355610A1 METHOD AND DEVICE FOR STABILIZING PRECURSOR FIBERS OR FILMS FOR PRODUCING CARBON FIBERS OR FILMS 有权
公开(公告)号：US20210355610A1
公开(公告)日：2021-11-18
申请号：US17283971
申请日：2019-10-10
申请人： CENTROTHERM INTERNATIONAL AG
发明人： Manuel CLAUSS , Andreas KELLER
IPC分类号： D01F9/16 , D01F9/22 , D01F9/17 , C08L33/20 , C08L1/02 , C08L97/00
摘要： A process for stabilizing precursor fibers for the production of carbon fibers is disclosed. The process comprises the following steps: continuously introducing, passing and removing said precursor fibers into, through and from a process chamber; establishing a predetermined process gas atmosphere different in composition from ambient air in said at least one process chamber, said process gas atmosphere containing at least one of a reactive component and a catalyst having a predetermined partial pressure; while said precursor fibers are in said process chamber, heating the precursor fibers to at least a first temperature and maintaining said first temperature for a predetermined period of time.

7. 发明申请

US20210111001A1 PLASMA GENERATOR, PLASMA TREATMENT DEVICE, AND METHOD FOR PROVIDING ELECTRIC POWER IN A PULSED MANNER 有权
公开(公告)号：US20210111001A1
公开(公告)日：2021-04-15
申请号：US16498728
申请日：2018-03-29
申请人： CENTROTHERM INTERNATIONAL AG
发明人： Sebastian Hubertus Schulz , Thomas Pernau , Florian Nachbauer , Felix Walk
IPC分类号： H01J37/32 , H05H1/46
摘要： A plasma generator and a method for the pulsed provision of electrical power having a frequency of at least 40 KHz to at least two process chambers are described. The plasma generator comprises: a control unit configured to obtain and evaluate process data about processes in the at least two process chambers; a controllable power supply having an output, the controllable power supply being configured to output a direct current at a predetermined voltage and/or intensity at its output in response to a control signal from the control unit; and a switching unit having a first input connected to the output of the power supply and having at least two switching unit outputs for respective connection to one of the at least two process chambers. The switching unit is configured to form, from a direct current at the input, an alternating current having a predetermined frequency of at least 40 KHz as an output signal and to selectively output the output signal as a pulse for a predetermined pulse duration to one of the switching unit outputs in response to a control signal from the control unit. The control unit is configured to coordinate power requirements of the at least two process chambers and to drive the power supply and the switching unit such that at the respective switching unit outputs communicating with the process chambers, substantially the power corresponding to the power requirements is provided as pulses over a period of time, wherein the pulses of the respective process chambers are temporally offset from each other such that the process chambers can be operated simultaneously.

8. 发明申请

US20180366352A1 METHOD AND DEVICE FOR THE THERMAL TREATMENT OF SUBSTRATES AND HOLDING UNIT FOR SUBSTRATES 审中-公开
公开(公告)号：US20180366352A1
公开(公告)日：2018-12-20
申请号：US16061034
申请日：2016-12-02
申请人： CENTROTHERM INTERNATIONAL AG
发明人： Steffem Müller , Helmut Aschner , Thomas Keller , Wilhelm Kegel , Wilfried Lerch
IPC分类号： H01L21/67 , H01L21/687 , F27D5/00 , F27B17/00
摘要： The invention relates to a method and to a device for the thermal treatment of substrates, in particular semiconductor wafers, and to a holding unit for substrates. In the method, in a process unit having a process chamber and having a plurality of radiation sources, one or more substrates are held in a box having a lower part and having a cover, wherein the lower part and the cover form a holding space for the substrate therebetween. Furthermore, the following steps are performed in the method: loading the box and the substrate into the process chamber and closing the process chamber; purging the holding space of the box with a purging gas and/or a process gas before the box and the substrate contained therein are heated to a desired process temperature in order to establish a desired atmosphere inside the box; and heating the box and the substrate contained therein to the desired process temperature by means of thermal radiation emitted by the radiation sources. The holding unit for substrates is designed to support the substrates in a process unit having a process chamber and having a plurality of radiation sources. The holding unit has a lower part and a cover, which form a box therebetween in the closed state, said box having a holding space for the substrate, wherein at least one of the parts has a plurality of purging openings, which connect a periphery of the box to the holding space in order enable the purging of the holding space in the closed state of the box, wherein the purging openings are designed in such a way that the purging openings substantially prevent the passage of thermal radiation of the radiation sources.

9. 发明申请

US20180337079A1 WAFER BOAT AND PLASMA TREATMENT DEVICE FOR WAFERS 审中-公开
公开(公告)号：US20180337079A1
公开(公告)日：2018-11-22
申请号：US15777299
申请日：2016-11-17
申请人： CENTROTHERM INTERNATIONAL AG
发明人： Peter Völk , Uli Walk , Wolfgang Jooss
IPC分类号： H01L21/673 , H01L31/18 , H01L21/687 , H01J37/32 , C23C16/34 , C23C16/505 , C23C16/458
CPC分类号： H01L21/67313 , C23C16/4587 , C23C16/505 , H01J37/32715 , H01J37/32733 , H01J37/32908 , H01J37/3299 , H01L21/67754 , H01L21/68771
摘要： The invention relates to a plate element for a wafer boat for the plasma treatment of disk-shaped wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications. The plate element is electrically conductive and has at least one holding unit on each side, for holding a wafer in a wafer holding region. The plate element has at least one recess in at least one side of the plate element and/or at least one opening in the plate element, wherein the at least one recess and/or the at least one opening in the plate element lies at least partially radially outside of the wafer holding region and directly adjacent thereto. The invention further relates to a wafer boat that has a plurality of plate elements of the above type arranged parallel to each other, wherein plate elements arranged adjacent are electrically insulated from each other. The invention further relates to a wafer boat in combination with a plasma treatment device, which has a process chamber for accommodating the wafer boat, means for controlling a process gas atmosphere in the process chamber in an open-loop or closed-loop manner, and at least one voltage source, which can be connected to the electrically conductive plate elements of the wafer boat in a suitable manner in order to apply a voltage between directly adjacent wafers held in the wafer boat.

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