专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20160307947A1 Pixel with Increased Charge Storage 有权
标题翻译：增加电荷存储的像素
公开(公告)号：US20160307947A1
公开(公告)日：2016-10-20
申请号：US14688020
申请日：2015-04-16
申请人： Caeleste CVBA
发明人： Bart DIERICKX , Gaozhan CAI
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H04N5/378 , H01L27/14605 , H01L27/1461 , H01L27/14614 , H01L27/14616 , H01L27/14643 , H04N5/3559 , H04N5/37452
摘要： A pixel circuit comprising a photodiode, a floating diffusion, a transfer gate for electrically connecting the photodiode to the floating diffusion, and a charge storage device, wherein the charge storage device comprises an electrode which is at least partly overlaying the photodiode, and which is configured and adapted to be driven so as to influence the total capacitance of the pixel
摘要翻译：一种像素电路，包括光电二极管，浮动扩散层，用于将光电二极管电连接到浮动扩散层的传输栅极，以及电荷存储装置，其中电荷存储装置包括至少部分覆盖光电二极管的电极，被配置并适于被驱动以影响像素的总电容

2. 发明申请

US20140263947A1 ENHANCED DYNAMIC RANGE IMAGING 审中-公开
标题翻译：增强动态范围成像
公开(公告)号：US20140263947A1
公开(公告)日：2014-09-18
申请号：US13833664
申请日：2013-03-15
申请人： Bart Dierickx , CAELESTE CVBA
发明人： Bart DIERICKX
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14656
摘要： A pixel element for an image sensor comprises a semiconductor substrate; a radiation-sensitive element configured to generate electric charges in response to incident radiation, and provided with a charge accumulation region configured to accumulate at least a portion of said electric charges; a passive potential barrier region; and a capacitive element operably connected to the charge-accumulation region of the radiation-sensitive element via the passive potential barrier region, the passive potential barrier region being configured to conduct charges from said charge accumulation region to the capacitive element when at least a predetermined amount of electrical charge has accumulated in said charge accumulation region.
摘要翻译：用于图像传感器的像素元件包括半导体衬底; 配置为响应于入射辐射而产生电荷并且设置有电荷累积区域的辐射敏感元件，其被配置为累积至少一部分所述电荷; 被动势垒区; 以及电容元件，其经由所述被动势垒区域可操作地连接到所述辐射敏感元件的电荷蓄积区域，所述无源势垒区域被配置为当至少预定量的电荷从所述电荷累积区域传导至所述电容元件的电荷累积在所述电荷累积区域中。

3. 发明授权

US11330207B1 High dynamic range in direct injection 有权
公开(公告)号：US11330207B1
公开(公告)日：2022-05-10
申请号：US17186277
申请日：2021-02-26
申请人： Caeleste CVBA
发明人： Bart Dierickx
IPC分类号： H04N5/355 , H04N5/359 , H04N5/378
摘要： A pixel structure and a method of reading charges generated by a radiation sensing element upon exposure thereof to radiation is presented. The pixel structure comprises at least two capacitors configured for integrating charge from a radiation sensing element, where an overflow transistor sets a predetermined threshold level by a static voltage on its control electrode. This allows charges generated in the radiation sensing element to be integrated in either the first capacitor for a level of charge generated by the radiation sensing element, while the level remains under a predetermined threshold level, or in the at least one further capacitor for a level of charge generated by the radiation sensing element when said level surpasses said predetermined threshold level. At least one merge switch is used for merging the charges of the first capacitor with the charges of the at least one further capacitor.

4. 发明授权

US09699398B2 Pixel with increased charge storage 有权
公开(公告)号：US09699398B2
公开(公告)日：2017-07-04
申请号：US14688020
申请日：2015-04-16
申请人： Caeleste CVBA
发明人： Bart Dierickx , Gaozhan Cai
IPC分类号： H01L27/16 , H04N5/378 , H01L27/146 , H04N5/355 , H04N5/3745
CPC分类号： H04N5/378 , H01L27/14605 , H01L27/1461 , H01L27/14614 , H01L27/14616 , H01L27/14643 , H04N5/3559 , H04N5/37452
摘要： A pixel circuit comprising a photodiode, a floating diffusion, a transfer gate for electrically connecting the photodiode to the floating diffusion, and a charge storage device, wherein the charge storage device comprises an electrode which is at least partly overlaying the photodiode, and which is configured and adapted to be driven so as to influence the total capacitance of the pixel.

5. 发明申请

US20200046240A1 LOW-AREA, LOW-POWER NEURAL RECORDING CIRCUIT, AND METHOD OF TRAINING THE SAME 审中-公开
公开(公告)号：US20200046240A1
公开(公告)日：2020-02-13
申请号：US16591568
申请日：2019-10-02
申请人： Paradromics, Inc. , Caeleste CVBA
发明人： Matthew R. Angle , Robert Edgington , Aamir Ahmed Khan , Bart Dierickx , Peng Gao , Amir Babaiefishani , Ahmed Abdelmoneem , Bert Luyssaert , Jean Pierre Vermeiren
IPC分类号： A61B5/04 , A61B5/00 , A61B5/0478
摘要： A sensor circuit that is capable of sensing of neural action potentials is disclosed. The circuit can be designed to minimize power dissipation and total silicon area so that it can be incorporated into a massively parallel sensor array and ultimately implanted in the body (e.g. into the brain) in a safe manner. The circuit can also be designed to be tunable such that it can be optimized in silico prior to fabrication, and can be optimized through the use of controllable current sources after fabrication.

6. 发明申请

US20160309105A1 IMAGING DEVICE FOR SPARSE INFORMATION IMAGE 审中-公开
标题翻译：图像信息图像成像设备
公开(公告)号：US20160309105A1
公开(公告)日：2016-10-20
申请号：US14688085
申请日：2015-04-16
申请人： Caeleste CVBA
发明人： Bart DIERICKX , Nick WITVROUWEN , Bert LUYSSAERT , Gaozhan CAI , Robert BILHORN
IPC分类号： H04N5/378 , H04N5/3745
CPC分类号： H04N5/378
摘要： An imaging system for detecting one or more events in a pixel array. The imaging system comprises the pixel array and a processing area adjacent to the pixel array. The imaging system is configured to transfer the pixel information of a subgroup of pixels to the processing area and the processing area is configured to process the event information.
摘要翻译：一种用于检测像素阵列中的一个或多个事件的成像系统。成像系统包括像素阵列和与像素阵列相邻的处理区域。成像系统被配置为将像素子像素信息传送到处理区域，并且处理区域被配置为处理事件信息。

7. 发明申请

US20160148962A1 THREE LEVEL TRANSFER GATE 有权
标题翻译：三级水平门
公开(公告)号：US20160148962A1
公开(公告)日：2016-05-26
申请号：US14554327
申请日：2014-11-26
申请人： Caeleste CVBA
发明人： Benoit DUPONT
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14612 , H04N5/3559 , H04N5/37452
摘要： A method and device of driving a radiation sensor pixel is disclosed. The sensor pixel comprises a sensing element capable of charge generation as a response to impinging radiation, a floating diffusion node, a transfer gate between the sensing element and the floating diffusion node, and a charge storage device connected to the floating diffusion node via a switch. The method comprises biasing the transfer gate to three or more bias voltages OFF, ON and an intermediate bias between OFF and ON. During the period in which the transfer gate is biased to the intermediate bias, if the sensor reaches saturation, the overflown charges may be collected and part of them stored in the charge storage device, for further analysis and merging.
摘要翻译：公开了一种驱动辐射传感器像素的方法和装置。传感器像素包括能够作为对入射辐射的响应的电荷产生的感测元件，浮动扩散节点，感测元件和浮动扩散节点之间的传输门，以及经由开关连接到浮动扩散节点的电荷存储装置。该方法包括将传输门偏置为三个或更多个偏置电压OFF，ON和中间偏置在OFF和ON之间。在传输门被偏置到中间偏置的时段内，如果传感器达到饱和，则可以收集溢出的电荷，并将其中的一部分存储在电荷存储装置中，以进行进一步的分析和合并。

8. 发明授权

US11463634B2 Charge domain binning in a MOS pixel 有权
公开(公告)号：US11463634B2
公开(公告)日：2022-10-04
申请号：US16842123
申请日：2020-04-07
申请人： Caeleste CVBA
发明人： Bart Dierickx
IPC分类号： H04N5/347 , H04N5/374 , H04N5/343 , H01L27/146
摘要： An array of pixels for charge domain binning in a CMOS image sensor, to increase the readout sensitivity of such a sensor. The array of pixels comprises at least two pixels in a common substrate. At least one of said pixels is configured or configurable to function as a pixel of a first type with a first, higher, charge collecting capability, for collecting charges generated by radiation impinging on the substrate. At least another one of said pixels is configurable to function as pixel of a second type, with a second, reduced, charge collecting capability, and as a pixel of the first type.

9. 发明申请

US20210314504A1 Charge Domain Binning in a MOS Pixel 有权
公开(公告)号：US20210314504A1
公开(公告)日：2021-10-07
申请号：US16842123
申请日：2020-04-07
申请人： Caeleste CVBA
发明人： Bart DIERICKX
IPC分类号： H04N5/347 , H04N5/374
摘要： An array of pixels for charge domain binning in a CMOS image sensor, to increase the readout sensitivity of such a sensor. The array of pixels comprises at least two pixels in a common substrate. At least one of said pixels is configured or configurable to function as a pixel of a first type with a first, higher, charge collecting capability, for collecting charges generated by radiation impinging on the substrate. At least another one of said pixels is configurable to function as pixel of a second type, with a second, reduced, charge collecting capability, and as a pixel of the first type.

10. 发明申请

US20190281238A1 DOUBLE SOURCE FOLLOWER HDR PIXEL 审中-公开
公开(公告)号：US20190281238A1
公开(公告)日：2019-09-12
申请号：US15916685
申请日：2018-03-09
申请人： Caeleste CVBA
发明人： Ajit Kumar KALGI
IPC分类号： H04N5/355 , H01L27/146
摘要： A pixel structure comprises at least one radiation-sensing element, for generating charges when exposed to radiation. The pixel structure includes a first connection arrangement between the at least one radiation-sensing element and a first source follower. The first connection arrangement has a switchable connection to a first reset voltage. At least one second connection arrangement is between the at least one radiation-sensing element and at least one second source follower. The second connection arrangement has a switchable connection to a second reset voltage. The first and at least one second source followers have a common output. The first and second connection arrangements and source followers are configured to provide each a different offset to the common output.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式