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1. 发明授权

US09099377B2 Micropipe-free silicon carbide and related method of manufacture 有权
标题翻译：无碳化硅和相关制造方法
公开(公告)号：US09099377B2
公开(公告)日：2015-08-04
申请号：US11854864
申请日：2007-09-13
申请人： Cem Basceri , Yuri Khlebnikov , Igor Khlebnikov , Cengiz Balkas , Murat N. Silan , Hudson McD. Hobgood , Calvin H. Carter, Jr. , Vijay Balakrishna , Robert T. Leonard , Adrian R. Powell , Valeri T. Tsvetkov , Jason R. Jenny
发明人： Cem Basceri , Yuri Khlebnikov , Igor Khlebnikov , Cengiz Balkas , Murat N. Silan , Hudson McD. Hobgood , Calvin H. Carter, Jr. , Vijay Balakrishna , Robert T. Leonard , Adrian R. Powell , Valeri T. Tsvetkov , Jason R. Jenny
IPC分类号： C30B23/00 , C30B29/36 , C30B29/40 , H01L29/16 , H01L21/02
CPC分类号： H01L29/1608 , C30B23/002 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L21/02631 , H01L21/02634 , Y10T428/21
摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.
摘要翻译：公开了无微波，单晶，碳化硅（SiC）和相关制造方法。通过将源材料和种子材料放置在升华系统的反应坩埚中的种子保持器上来生长SiC，其中包括源材料，反应坩埚和种子保持器的升华系统的构成成分基本上没有无意的杂质。通过控制PVT过程中生长温度，生长压力，SiC升华通量和组成以及种子材料或种子材料上生长的SiC晶体之间的温度梯度，消除了微管诱导过程的不稳定性，在种子材料上生长游离的SiC晶体。

2. 发明授权

US08618553B2 Process for producing silicon carbide crystals having increased minority carrier lifetimes 有权
标题翻译：具有增加的少数载流子寿命的碳化硅晶体的生产方法
公开(公告)号：US08618553B2
公开(公告)日：2013-12-31
申请号：US12871095
申请日：2010-08-30
申请人： Calvin H. Carter, Jr. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
发明人： Calvin H. Carter, Jr. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
IPC分类号： H01L29/15
CPC分类号： C30B29/36 , C30B33/02
摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
摘要翻译：描述了一种用于生产具有增加的少数载流子寿命的碳化硅晶体的方法。该方法包括以下步骤：加热并缓慢冷却具有第一浓度的少数载流子复合中心的碳化硅晶体，使得所得到的少数载流子复合中心的浓度低于第一浓度。

3. 再颁专利

USRE34861E Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide 失效
标题翻译：碳化硅的升华产生大的，器件质量的碳化硅单晶
公开(公告)号：USRE34861E
公开(公告)日：1995-02-14
申请号：US594856
申请日：1990-10-09
申请人： Robert F. Davis , Calvin H. Carter, Jr. , Charles E. Hunter
发明人： Robert F. Davis , Calvin H. Carter, Jr. , Charles E. Hunter
IPC分类号： C30B29/36 , C30B23/00 , H01L21/203 , H01L21/205 , H01L33/00 , H01L21/365
CPC分类号： H01L33/0054 , C30B23/00 , C30B29/36 , Y10S148/021 , Y10S148/148
摘要： The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth surface and seed crystals, and by controlling the thermal gradient between the source materials and the seed crystal.
摘要翻译：本发明是形成大型器件质量的碳化硅单晶的方法。通过在源材料中保持恒定的多型组成，通过选择的原料尺寸分布，通过生长表面和晶种的具体制备，以及通过控制源材料和晶种之间的热梯度来增强升华过程。

4. 发明授权

US5119540A Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product 失效
标题翻译：用于消除碳化硅外延层和所得产品中的残余氮污染的装置
公开(公告)号：US5119540A
公开(公告)日：1992-06-09
申请号：US558196
申请日：1990-07-24
申请人： Hua-Shuang Kong , Thomas G. Coleman , Calvin H. Carter, Jr.
发明人： Hua-Shuang Kong , Thomas G. Coleman , Calvin H. Carter, Jr.
IPC分类号： C30B25/02 , C30B25/12
CPC分类号： C30B25/12 , C30B25/02 , C30B29/36 , Y10T428/131
摘要： The invention is a method, and associated apparatus and product, of forming extremely pure epitaxial layers of silicon carbide by reducing the carrier concentration of residual nitrogen in silicon carbide formed by chemical vapor deposition processes. The method comprises placing a substrate upon which an epitaxial layer of silicon carbide will form upon a susceptor, and in which the susceptor is formed of a material that will not generate undesired nitrogen-containing out gases at the temperatures at which chemical vapor deposition of silicon carbide will take place from appropriate source gases. The substrate is heated to a temperature at which chemical vapor deposition of silicon carbide will take place from appropriate source gases by inductively heating the susceptor using an induction frequency that heats the susceptor material. Silicon-containing and carbon-containing source gases are then introduced that will form an epitaxial layer of silicon carbide upon the heated substrate.
摘要翻译：本发明是通过降低通过化学气相沉积工艺形成的碳化硅中的残留氮的载流子浓度，形成极其纯的碳化硅外延层的方法和相关的装置和产品。该方法包括放置一个衬底，碳化硅外延层将在其上形成在感受体上，并且其中感受体由在硅化学气相沉积的温度下不会产生不需要的含氮气体的材料形成碳化物将从适当的源气体发生。将衬底加热到通过使用加热感受体材料的感应频率感应加热感受器从适当的源气体发生碳化硅的化学气相沉积的温度。然后引入含硅和含碳源气体，其将在加热的基底上形成碳化硅的外延层。

5. 发明授权

US4912063A Growth of beta-sic thin films and semiconductor devices fabricated thereon 失效
标题翻译：在其上制造的β型薄膜和半导体器件的生长
公开(公告)号：US4912063A
公开(公告)日：1990-03-27
申请号：US113921
申请日：1987-10-26
申请人： Robert F. Davis , Hua-Shuang Kong , Jeffrey T. Glass , Calvin H. Carter, Jr.
发明人： Robert F. Davis , Hua-Shuang Kong , Jeffrey T. Glass , Calvin H. Carter, Jr.
IPC分类号： H01L21/365
CPC分类号： H01L21/0262 , H01L21/02378 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02658 , Y10S117/904 , Y10S148/148
摘要： Device quality thin films of Beta-SiC are epitaxially grown on substrates of Alpha-Sic.
摘要翻译： β-SiC的器件质量薄膜在Alpha-Sic的底物上外延生长。

6. 发明申请

US20100320477A1 PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MINORITY CARRIER LIFETIMES 有权
标题翻译：生产具有增加少数载体寿命的碳化硅晶体的方法
公开(公告)号：US20100320477A1
公开(公告)日：2010-12-23
申请号：US12871095
申请日：2010-08-30
申请人： Calvin H. Carter, JR. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
发明人： Calvin H. Carter, JR. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
IPC分类号： H01L29/24 , H01L29/868
CPC分类号： C30B29/36 , C30B33/02
摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
摘要翻译：描述了一种用于生产具有增加的少数载流子寿命的碳化硅晶体的方法。该方法包括以下步骤：加热并缓慢冷却具有第一浓度的少数载流子复合中心的碳化硅晶体，使得所得到的少数载流子复合中心的浓度低于第一浓度。

7. 发明授权

US06403982B2 Semi-insulating silicon carbide without vanadium domination 有权
标题翻译：半绝缘碳化硅无钒支配
公开(公告)号：US06403982B2
公开(公告)日：2002-06-11
申请号：US09757950
申请日：2001-01-10
申请人： Calvin H. Carter, Jr. , Mark Brady , Valeri F. Tsvetkov
发明人： Calvin H. Carter, Jr. , Mark Brady , Valeri F. Tsvetkov
IPC分类号： H01L310312
CPC分类号： C30B23/00 , C30B29/36 , C30B33/00
摘要： A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
摘要翻译：公开了一种半绝缘体碳化硅单晶，其在室温下的电阻率至少为5000欧姆 - 厘米，深层捕集元素的浓度低于将影响晶体电阻率的量，优选低于可检测水平。还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。

8. 发明授权

US06396080B2 Semi-insulating silicon carbide without vanadium domination 有权
标题翻译：半绝缘碳化硅无钒支配
公开(公告)号：US06396080B2
公开(公告)日：2002-05-28
申请号：US09866129
申请日：2001-05-25
申请人： Calvin H. Carter, Jr. , Mark Brady , Valeri F. Tsvetkov
发明人： Calvin H. Carter, Jr. , Mark Brady , Valeri F. Tsvetkov
IPC分类号： H01L310312
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , C30B33/00 , H01L29/778 , H01L29/78 , H01L29/812
摘要： A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of trapping elements that create states at least 700 meV from the valence or conduction band that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
摘要翻译：公开了半导体碳化硅单体，其在室温下具有至少5000欧姆 - 厘米的电阻率，并且捕获元素的浓度从产生低于量的价态或导带产生至少700meV的状态这将影响晶体的电阻率，优选低于可检测水平。还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。

9. 发明授权

US5465249A Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate 失效
标题翻译：具有在碳化硅衬底中制成的晶体管和电容器的非易失性随机存储器件
公开(公告)号：US5465249A
公开(公告)日：1995-11-07
申请号：US798219
申请日：1991-11-26
申请人： James A. Cooper, Jr. , John W. Palmour , Calvin H. Carter, Jr.
发明人： James A. Cooper, Jr. , John W. Palmour , Calvin H. Carter, Jr.
IPC分类号： G11C14/00 , G11C11/404 , G11C17/00 , H01L21/8229 , H01L21/8246 , H01L27/102 , H01L27/105 , H01L29/24 , G11C11/401
CPC分类号： H01L29/1608 , G11C11/404 , H01L27/1023
摘要： A random access memory (RAM) cell in 6H-SiC having storage times when all bias is removed long enough to be considered nonvolatile. The nonvolatile random access memory (NVRAM) cell comprises a bit line, a charge storage device in silicon carbide, and a transistor in silicon carbide connecting the charge storage device to the bit line. The bipolar NVRAM cell has a bipolar transistor with a base region, an emitter region, and a floating collector region, wherein the charge storage device in the bipolar NVRAM is a p-n junction adjacent the floating collector region of the cell. The metal-oxide-semiconductor (MOS) NVRAM has a MOS field effect transistor (MOSFET) with a channel region, a source region, and a drain region, wherein the charge storage device in the MOS NVRAM is a MOS capacitor adjacent the drain region of the MOSFET.
摘要翻译： 6H-SiC中的随机存取存储器（RAM）单元具有所有偏移被去除的存储时间，足以被认为是非易失性的。非易失性随机存取存储器（NVRAM）单元包括位线，碳化硅中的电荷存储装置和将电荷存储装置连接到位线的碳化硅晶体管。双极NVRAM单元具有双极晶体管，其具有基极区域，发射极区域和浮动集电极区域，其中双极NVRAM中的电荷存储器件是邻近电池的浮置集电极区域的p-n结。金属氧化物半导体（MOS）NVRAM具有沟道区，源极区和漏极区的MOS场效应晶体管（MOSFET），其中MOS NVRAM中的电荷存储装置是与漏极区相邻的MOS电容的MOSFET。

10. 发明授权

US5093576A High sensitivity ultraviolet radiation detector 失效
标题翻译：高灵敏度紫外线检测仪
公开(公告)号：US5093576A
公开(公告)日：1992-03-03
申请号：US670534
申请日：1991-03-15
申请人： John A. Edmond , Calvin H. Carter, Jr.
发明人： John A. Edmond , Calvin H. Carter, Jr.
IPC分类号： H01L31/10 , H01L31/0312 , H01L31/103
CPC分类号： H01L31/0312 , H01L31/103
摘要： A high sensitivity radiation detecting photodiode formed in silicon carbide comprises a monocrystalline silicon carbide substrate; a first monocrystalline portion of silicon carbide upon the substrate and having a first conductivity type; a second monocrystalline portion of silicon carbide adjacent the first portion and having the opposite conductivity type from the first portion; and a p-n junction between the adjacent first and second portions. The photodiode provides a dark current density of no more than about 1.times.10.sup.-9 amps/cm.sup.2 at a reverse bias of -1.0 volts and at temperatures of 170.degree. C. or less.
摘要翻译：形成在碳化硅中的高灵敏度辐射检测光电二极管包括单晶碳化硅衬底; 第一单晶部分的碳化硅在衬底上并且具有第一导电类型; 与所述第一部分相邻并且具有与所述第一部分相反的导电类型的碳化硅的第二单晶部分; 以及相邻的第一和第二部分之间的p-n结。光电二极管在-1.0伏的反向偏压和170℃或更低的温度下提供不超过约1×10 -9安培/ cm 2的暗电流密度。

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