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1. 发明授权

US07575963B2 Method for manufacturing contact structures of wiring 有权
标题翻译：制造布线接触结构的方法
公开(公告)号：US07575963B2
公开(公告)日：2009-08-18
申请号：US11874769
申请日：2007-10-18
申请人： Hyang-Shik Kong , Myung-Koo Hur , Chi-Woo Kim
发明人： Hyang-Shik Kong , Myung-Koo Hur , Chi-Woo Kim
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： G02F1/13439 , G02F1/13458 , H01L21/76801 , H01L21/76838 , H01L23/53209 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300° C. for 5 minutes, and a semiconductor layer an ohmic contact layer are sequentially formed. Next, a conductor layer of a metal such as Cr is deposited and patterned to form a data wire include a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Then, a passivation layer is deposited and patterned to form contact holes exposing the drain electrode, the gate pad and the data pad. Next, indium zinc oxide is deposited and patterned to form a pixel electrode, a redundant gate pad and a redundant data pad respectively connected to the drain electrode, the gate pad and the data pad.
摘要翻译：首先，将铝基材料的导电材料沉积并图案化以形成包括栅极线，栅极焊盘和栅电极的栅极线。通过在大于300℃的范围内沉积氮化硅5分钟形成栅极绝缘层，并依次形成半导体层欧姆接触层。接下来，沉积并图案化诸如Cr的金属的导体层以形成数据线，其包括与栅极线相交的数据线，源电极，漏电极和数据焊盘。然后，沉积并图案化钝化层以形成暴露漏电极，栅极焊盘和数据焊盘的接触孔。接下来，沉积并图案化氧化铟锌以形成分别连接到漏电极，栅极焊盘和数据焊盘的像素电极，冗余栅极焊盘和冗余数据焊盘。

2. 发明授权

US07218371B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US07218371B2
公开(公告)日：2007-05-15
申请号：US11166010
申请日：2005-06-24
申请人： Woo-Suk Chung , Chi-Woo Kim , Bo-Young An , Hyong-Gon Lee , Sung-Hee Cho
发明人： Woo-Suk Chung , Chi-Woo Kim , Bo-Young An , Hyong-Gon Lee , Sung-Hee Cho
IPC分类号： G02F1/1345 , G02F1/1343
CPC分类号： G02F1/133512 , G02F1/134336 , G02F1/1345 , G02F2001/133337 , G02F2001/133388 , G02F2001/133397 , G09G3/3648 , G09G2330/08 , G09G2330/10
摘要： In a liquid crystal display, a plurality of gate lines and data lines are provided on a first substrate including a display area as a screen, and a peripheral area external to the display area wherein a plurality of pixel electrodes are electrically connected to the gate lines and to the data lines, and some of the pixel electrodes extend to be located in the peripheral area; and optionally, a black matrix is formed on a second substrate disposed opposite to the first substrate for screening the extended portions of the pixel electrodes located in the peripheral area, a rubbing direction of aligning films is formed on the first and the second substrates towards the extended portions of the pixel electrodes located in the peripheral area so that impurity ions on the surface of the aligning film travel along the rubbing direction to stop at the extended portions of the pixel electrodes, and an image defect area caused by the impurity ions is screened with the black matrix.
摘要翻译：在液晶显示器中，多个栅极线和数据线设置在包括显示区域作为屏幕的第一基板上，以及在显示区域外部的外围区域，其中多个像素电极电连接到栅极线和数据线，并且一些像素电极延伸到位于周边区域中; 并且可选地，在与第一基板相对设置的第二基板上形成黑矩阵，用于屏蔽位于周边区域中的像素电极的延伸部分，在第一和第二基板上形成定向膜的摩擦方向朝向位于周边区域中的像素电极的延伸部分，使得取向膜表面上的杂质离子沿着摩擦方向行进，以在像素电极的延伸部分处停止，并且筛选由杂质离子引起的图像缺陷区域与黑色矩阵。

3. 发明授权

US06954244B2 Reflection liquid crystal display device with reflection electrode region having two widths 失效
标题翻译：具有两个宽度的反射电极区域的反射型液晶显示装置
公开(公告)号：US06954244B2
公开(公告)日：2005-10-11
申请号：US10415590
申请日：2002-08-05
申请人： Jin Jeon , Chi-Woo Kim
发明人： Jin Jeon , Chi-Woo Kim
IPC分类号： G02F1/1335 , G02F1/1343 , G02F1/1368
CPC分类号： G02F1/133553
摘要： Disclosed is a reflection type liquid crystal display device. A second substrate (220) is provided opposite to a first substrate (210) where pixels are formed. A liquid crystal layer (230) is interposed between the first and second substrates. A reflection electrode (235) is formed on the first substrate (210). The reflection electrode (235) includes first and second regions (290, 295) having relatively high and low heights so as to scatter a light, respectively. The first regions (290) have first widths in a first direction wider than second widths in a second direction so that a reflectivity in the first direction is higher than a reflectivity in the second direction. The widths of the grooves (290a, b) are varied in a desired direction regardless of shapes of the lenses (295), to thereby improve the viewing angle and reflectivity of the display in the specific direction.
摘要翻译：公开了一种反射型液晶显示装置。第二衬底（220）设置成与形成像素的第一衬底（210）相对。液晶层（230）插入在第一和第二基板之间。反射电极（235）形成在第一基板（210）上。反射电极（235）包括具有相对较高和较低高度的第一和第二区域（290,295），以分别散射光。第一区域（290）在第二方向上具有比第二宽度宽的第一方向上的第一宽度，使得第一方向上的反射率高于第二方向上的反射率。不管透镜（295）的形状如何，凹槽（290a，b）的宽度都在所需的方向上变化，从而改善了显示器在特定方向上的视角和反射率。

4. 发明授权

US06686606B2 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof 有权
公开(公告)号：US06686606B2
公开(公告)日：2004-02-03
申请号：US10389778
申请日：2003-03-18
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chua-Gi You
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chua-Gi You
IPC分类号： H01L2904
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

5. 发明授权

US06582982B2 Composition for wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof 有权
公开(公告)号：US06582982B2
公开(公告)日：2003-06-24
申请号：US09962210
申请日：2001-09-26
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
IPC分类号： H01L2100
CPC分类号： G02F1/1368 , G02F1/136227 , G02F1/136286 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

6. 发明授权

US06486494B2 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof 有权
标题翻译：配线用组合物，使用该组合物的布线及其制造方法，使用布线的显示器及其制造方法
公开(公告)号：US06486494B2
公开(公告)日：2002-11-26
申请号：US10035245
申请日：2002-01-04
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
IPC分类号： H01L2904
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with An Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.
摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金附魔或Cr附魔被蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或半导体显示器以及Al Al层或Cr层。由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 + O 2的蚀刻气体系统可以防止Mo或MoW合金层的蚀刻，以及蚀刻气体 SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢和至少一种选自CF 4，CHF 3的气体的气体的蚀刻气体系统， CHClF 2，CH 3 F和C 2 F 6，产生良好的TFT特性，并且H 2等离子体处理可以进一步提高TFT特性。

7. 发明授权

US06380098B1 Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof 有权
标题翻译：配线用组合物，使用该组合物的布线及其制造方法，使用布线的显示器及其制造方法
公开(公告)号：US06380098B1
公开(公告)日：2002-04-30
申请号：US09492830
申请日：2000-01-27
申请人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
发明人： Chang-Oh Jeong , Yang-Sun Kim , Myung-Koo Hur , Young-Jae Tak , Mun-Pyo Hong , Chi-Woo Kim , Jang-Soo Kim , Chun-Gi You
IPC分类号： H01L21302
CPC分类号： G02F1/1368 , G02F1/136227 , G02F1/136286 , G02F2001/13629 , H01L21/28008 , H01L23/4827 , H01L29/42384 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF4, CHF3, CHClF2, CH3F and C2F6 yield the good characteristics of TFT, and H2 plasma treatment can cause the characteristics of the TFT to be improved.
摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金蚀刻剂或Cr蚀刻剂蚀刻以具有平滑的锥角，并且Mo或MoW层用于显示器或半导体的布线装置以及Al层和Cr层。由于可以通过调整沉积压力来沉积Mo或MoW层以对基底施加低应力，所以可以单个MoW层自身用作布线。当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，蚀刻气体系统CF4 + O2可以防止Mo或MoW合金层的蚀刻，并且蚀刻气体SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。此外，当通过使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用蚀刻气体系统如卤化氢和选自CF 4，CHF 3，CHClF 2，CH 3 F 和C2F6产生TFT的良好特性，并且H2等离子体处理可以导致TFT的特性得到改善。

8. 发明授权

US07688292B2 Organic light emitting diode display device and driving method thereof 有权
标题翻译：有机发光二极管显示装置及其驱动方法
公开(公告)号：US07688292B2
公开(公告)日：2010-03-30
申请号：US11373671
申请日：2006-03-09
申请人： Kee-Chan Park , Ho-Suk Maeng , Seong-Il Park , Cheol-Min Kim , Chi-Woo Kim , Soong-Yong Joo , Il-Gon Kim
发明人： Kee-Chan Park , Ho-Suk Maeng , Seong-Il Park , Cheol-Min Kim , Chi-Woo Kim , Soong-Yong Joo , Il-Gon Kim
IPC分类号： G09G3/32
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2320/043
摘要： A display device includes a plurality of pixels, wherein each pixel includes: a light emitting element; a first capacitor connected between a first node and a second node; a driving transistor having an input terminal, an output terminal, and a control terminal connected to the second node where the driving transistor supplies a driving current to the light emitting element to emit light; a first switching unit supplying a first reference voltage to the driving transistor according to a first scanning signal and connecting the first node to a data voltage or the driving transistor; and a second switching unit supplying a driving voltage to the driving transistor according to a second scanning signal and connecting the first node to the data voltage. Accordingly, variations in threshold voltage of the driving transistor can be compensated for so that it is possible to display a uniform image.
摘要翻译：显示装置包括多个像素，其中每个像素包括：发光元件; 连接在第一节点和第二节点之间的第一电容器; 驱动晶体管，其具有输入端子，输出端子和连接到所述第二节点的控制端子，其中所述驱动晶体管向所述发光元件提供驱动电流以发光; 第一开关单元，根据第一扫描信号向驱动晶体管提供第一参考电压，并将第一节点连接到数据电压或驱动晶体管; 以及第二开关单元，其根据第二扫描信号向驱动晶体管提供驱动电压，并将第一节点连接到数据电压。因此，可以补偿驱动晶体管的阈值电压的变化，使得可以显示均匀的图像。

9. 发明申请

US20080030494A1 Gate-on voltage generation circuit, gate-off voltage generation circuit, and liquid crystal display device having the same 审中-公开
标题翻译：栅极电压产生电路，栅极截止电压产生电路和具有该栅极电压产生电路的液晶显示装置
公开(公告)号：US20080030494A1
公开(公告)日：2008-02-07
申请号：US11888787
申请日：2007-08-01
申请人： Doo Hyung Woo , Kee Chan Park , Chi Woo Kim , Shang Min Yhee , Zhangzhifeng , Seong Park
发明人： Doo Hyung Woo , Kee Chan Park , Chi Woo Kim , Shang Min Yhee , Zhangzhifeng , Seong Park
IPC分类号： G09G3/00 , G02F1/133 , G09G3/36
CPC分类号： G09G3/3696 , G09G3/3674 , G09G2330/02 , G09G2330/021 , H02M3/073
摘要： A gate-on voltage generation circuit, a gate-off voltage generation circuit, and a liquid crystal display (LCD) using the same are provided. The gate-on voltage generation circuit includes a first capacitor charged with a first control signal and a first reference voltage to output a first charging voltage through a first output node according to the first control signal. A second capacitor is charged with a second control signal and the first reference voltage to output a second charging voltage according to the second control signal. A first switching device is connected between the first capacitor and the first output node to selectively output the first charging voltage to the first output node. A second switching device is turned on by the second charging voltage to supply the first reference voltage to the first capacitor, the first and second switching devices being exclusively turned on and off. A third switching device is turned on by the first charging voltage to supply the first reference voltage to the second capacitor. The third switching device turns on the first switching device and at the same time turns off the second switching device by supplying the first reference voltage to the first and second switching devices.
摘要翻译：提供了导通电压产生电路，栅极截止电压产生电路和使用该电路的液晶显示器（LCD）。栅极导通电压产生电路包括充满第一控制信号的第一电容器和第一参考电压，以根据第一控制信号通过第一输出节点输出第一充电电压。对第二电容器充电第二控制信号和第一参考电压，以根据第二控制信号输出第二充电电压。第一开关装置连接在第一电容器和第一输出节点之间，以选择性地将第一充电电压输出到第一输出节点。通过第二充电电压接通第二开关装置，以将第一参考电压提供给第一电容器，第一和第二开关装置被专门地导通和关断。通过第一充电电压接通第三开关装置，以将第一参考电压提供给第二电容器。第三开关器件接通第一开关器件，同时通过向第一和第二开关器件提供第一参考电压而关断第二开关器件。

10. 发明申请

US20080026500A1 FLAT PANEL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：平板显示装置及其制造方法
公开(公告)号：US20080026500A1
公开(公告)日：2008-01-31
申请号：US11781518
申请日：2007-07-23
申请人： Han-Na Jo , Chi-Woo Kim , Young-Jin Chang , Jae-Beom Choi
发明人： Han-Na Jo , Chi-Woo Kim , Young-Jin Chang , Jae-Beom Choi
IPC分类号： H01L33/00 , H01L21/335
CPC分类号： H01L27/1285
摘要： A flat panel display device includes a substrate including a pixel area having a plurality of pixel parts and a peripheral circuit area disposed adjacent to the pixel area to drive the pixel parts, a circuit TFT disposed in the peripheral circuit area, the circuit TFT including a first semiconductor layer having a first crystal growth in a lateral direction, and a pixel TFT disposed in the pixel area, the pixel TFT including a second semiconductor layer having a second crystal isotropic growth.
摘要翻译：平板显示装置包括：基板，包括具有多个像素部分的像素区域和与像素区域相邻设置的外围电路区域以驱动像素部分;电路TFT，设置在外围电路区域中;电路TFT包括：在横向方向上具有第一晶体生长的第一半导体层和设置在像素区域中的像素TFT，所述像素TFT包括具有第二晶体各向同性生长的第二半导体层。

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