专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08599878B2 Wireless communication apparatus, header compression method thereof, and header decompression method thereof 有权
标题翻译：无线通信装置，其头压缩方法及其标题解压缩方法
公开(公告)号：US08599878B2
公开(公告)日：2013-12-03
申请号：US12843882
申请日：2010-07-27
申请人： Chih-Chiang Wu , Kanchei Loa , Shu-Tsz Liu
发明人： Chih-Chiang Wu , Kanchei Loa , Shu-Tsz Liu
IPC分类号： H04J3/18
CPC分类号： H04W28/06 , H04L69/04 , H04W84/047
摘要： Wireless communication apparatuses, header compression methods thereof, and header decompression method thereof are provided. The header compression method enables the transceiver to establish a tunnel for a user equipment, enables the processing unit to receive a first packet, enables the processing unit to generate a second packet comprising an outer header set and the first packet, enables the processing unit to replace the outer header set of the second packet with a replaced header, and enables the transceiver to transmit the second packet by the tunnel according to an identity recorded in the replaced header. The header decompression method decompresses the header compressed by the header compression method.
摘要翻译：提供无线通信设备，其报头压缩方法以及报头解压缩方法。报头压缩方法使得收发器能够为用户设备建立隧道，使得处理单元能够接收第一分组，使处理单元能够生成包括外部报头集合和第一分组的第二分组，使处理单元能够用替换的报头替换第二分组的外部报头集合，并且使得收发器能够根据记录在替换的报头中的标识通过隧道传输第二分组。头解压缩方法解压缩头压缩方法压缩的头。

2. 发明授权

US08509214B2 Relay station and backhaul connection method thereof 有权
标题翻译：中继站及其回程连接方法
公开(公告)号：US08509214B2
公开(公告)日：2013-08-13
申请号：US12821832
申请日：2010-06-23
申请人： Shu-Tsz Liu , Chih-Chiang Wu , Kanchei Loa
发明人： Shu-Tsz Liu , Chih-Chiang Wu , Kanchei Loa
IPC分类号： H04J3/06
CPC分类号： H04W84/047 , H04B7/15557 , H04B7/2606
摘要： A relay station and a backhaul connection method thereof are provided. The relay station adopts an NAS mechanism. A wireless communication system comprises the relay station, a base station, and a core network. The relay station comprises a processing unit and a transceiver. The processing unit enters a first state of the NAS mechanism after the relay station creates a radio connection with the core network. The transceiver transmits a backhaul connection request to the base station after the relay station enters the first state. The processing unit then enters a second state of the NAS mechanism after the transmission of the backhaul connection request. The transceiver then receives a backhaul connection response from the base station after the transmission of the backhaul connection request. The processing unit then enters the first state after the receipt of the backhaul connection response.
摘要翻译：提供了一种中继站及其回程连接方法。中继站采用NAS机制。无线通信系统包括中继站，基站和核心网。中继站包括处理单元和收发器。在中继站与核心网络建立无线电连接之后，处理单元进入NAS机制的第一状态。收发器在中继站进入第一状态之后向基站发送回程连接请求。然后处理单元在传送回程连接请求之后进入NAS机制的第二状态。然后，收发器在传送回程连接请求之后从基站接收回程连接响应。然后处理单元在接收到回程连接响应之后进入第一状态。

3. 发明申请

US20110019695A1 WIRELESS COMMUNICATION APPARATUS, HEADER COMPRESSION METHOD THEREOF, AND HEADER DECOMPRESSION METHOD THEREOF 有权
标题翻译：无线通信装置，其头部压缩方法及其头部解码方法
公开(公告)号：US20110019695A1
公开(公告)日：2011-01-27
申请号：US12843882
申请日：2010-07-27
申请人： Chih-Chiang WU , Kanchei LOA , Shu-Tsz LIU
发明人： Chih-Chiang WU , Kanchei LOA , Shu-Tsz LIU
IPC分类号： H04J3/18
CPC分类号： H04W28/06 , H04L69/04 , H04W84/047
摘要： Wireless communication apparatuses, header compression methods thereof, and header decompression method thereof are provided. The header compression method enables the transceiver to establish a tunnel for a user equipment, enables the processing unit to receive a first packet, enables the processing unit to generate a second packet comprising an outer header set and the first packet, enables the processing unit to replace the outer header set of the second packet with a replaced header, and enables the transceiver to transmit the second packet by the tunnel according to an identity recorded in the replaced header. The header decompression method decompresses the header compressed by the header compression method.
摘要翻译：提供无线通信设备，其报头压缩方法以及报头解压缩方法。报头压缩方法使得收发器能够为用户设备建立隧道，使得处理单元能够接收第一分组，使处理单元能够生成包括外部报头集合和第一分组的第二分组，使处理单元能够用替换的报头替换第二分组的外部报头集合，并且使得收发器能够根据记录在替换的报头中的标识通过隧道传输第二分组。头解压缩方法解压缩头压缩方法压缩的头。

4. 发明申请

US20100322147A1 RELAY STATION AND BACKHAUL CONNECTION METHOD THEREOF 有权
标题翻译：继电器和后置连接方法
公开(公告)号：US20100322147A1
公开(公告)日：2010-12-23
申请号：US12821832
申请日：2010-06-23
申请人： Shu-Tsz LIU , Chih-Chiang WU , Kanchei LOA
发明人： Shu-Tsz LIU , Chih-Chiang WU , Kanchei LOA
IPC分类号： H04W4/00 , H04B7/14
CPC分类号： H04W84/047 , H04B7/15557 , H04B7/2606
摘要： A relay station and a backhaul connection method thereof are provided. The relay station adopts an NAS mechanism. A wireless communication system comprises the relay station, a base station, and a core network. The relay station comprises a processing unit and a transceiver. The processing unit enters a first state of the NAS mechanism after the relay station creates a radio connection with the core network. The transceiver transmits a backhaul connection request to the base station after the relay station enters the first state. The processing unit then enters a second state of the NAS mechanism after the transmission of the backhaul connection request. The transceiver then receives a backhaul connection response from the base station after the transmission of the backhaul connection request. The processing unit then enters the first state after the receipt of the backhaul connection response.
摘要翻译：提供了一种中继站及其回程连接方法。中继站采用NAS机制。无线通信系统包括中继站，基站和核心网。中继站包括处理单元和收发器。在中继站与核心网络建立无线电连接之后，处理单元进入NAS机制的第一状态。收发器在中继站进入第一状态之后向基站发送回程连接请求。然后处理单元在传送回程连接请求之后进入NAS机制的第二状态。然后，收发器在传送回程连接请求之后从基站接收回程连接响应。然后处理单元在接收到回程连接响应之后进入第一状态。

5. 发明申请

US20100322146A1 BASE STATION, RELAY STATION, AND BACKHAUL CONTROL COMMUNICATION METHODS THEREOF 有权
标题翻译：基站，中继站和后台控制通信方法
公开(公告)号：US20100322146A1
公开(公告)日：2010-12-23
申请号：US12821777
申请日：2010-06-23
申请人： Shu-Tsz LIU , Chih-Chiang WU , Kanchei LOA , Chun-Yen HSU
发明人： Shu-Tsz LIU , Chih-Chiang WU , Kanchei LOA , Chun-Yen HSU
IPC分类号： H04B7/14 , H04W4/00 , H04W88/02
CPC分类号： H04W84/047 , H04B7/155 , H04B7/2606
摘要： A relay station and a backhaul control communication thereof are provided. A wireless communication system comprises the relay station, a base station, and a core network. The relay station is wirelessly connected to the base station, while the base station is wiredly connected to the core network. The relay station comprises a processing unit and a transceiver. The processing unit is configured to create a radio link having a control plane connection between the relay station and the base station and create a backhaul link between the relay station and the base station by the control plane connection of the radio link. The transceiver is configured to transmit a backhaul control message to the core network via the backhaul link.
摘要翻译：提供了中继站及其回传控制通信。无线通信系统包括中继站，基站和核心网。中继站与基站无线连接，而基站有线连接到核心网。中继站包括处理单元和收发器。处理单元被配置为创建在中继站和基站之间具有控制平面连接的无线电链路，并且通过无线电链路的控制平面连接在中继站和基站之间创建回程链路。收发器被配置为经由回程链路向核心网络发送回程控制消息。

6. 发明申请

US20090186475A1 Method of manufacturing a MOS transistor 审中-公开
标题翻译：制造MOS晶体管的方法
公开(公告)号：US20090186475A1
公开(公告)日：2009-07-23
申请号：US12017065
申请日：2008-01-21
申请人： Shyh-Fann Ting , Cheng-Tung Huang , Shih-Chieh Hsu , Chih-Chiang Wu , Meng-Yi Wu , Li-Shian Jeng , Chung-Min Shih , Kun-Hsien Lee , Wen-Han Hung , Yao-Chin Cheng , Chi-Sheng Tseng , Yu-Ming Lin , Shih-Jung Tu , Tzyy-Ming Cheng
发明人： Shyh-Fann Ting , Cheng-Tung Huang , Shih-Chieh Hsu , Chih-Chiang Wu , Meng-Yi Wu , Li-Shian Jeng , Chung-Min Shih , Kun-Hsien Lee , Wen-Han Hung , Yao-Chin Cheng , Chi-Sheng Tseng , Yu-Ming Lin , Shih-Jung Tu , Tzyy-Ming Cheng
IPC分类号： H01L21/3205
CPC分类号： H01L21/28123 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/6653 , H01L29/66545 , H01L29/6656 , H01L29/66636
摘要： A method of manufacturing a MOS transistor, in which, a tri-layer photo resist layer is used to form a patterned hard mask layer having a sound shape and a small size, and the patterned hard mask layer is used to form a gate. Thereafter, by forming and defining a cap layer, a recess is formed through etching in the substrate. The patterned hard mask is removed after epitaxial layers are formed in the recesses. Accordingly, a conventional poly bump issue and an STI oxide loss issue leading to contact bridge can be avoided.
摘要翻译：一种制造MOS晶体管的方法，其中使用三层光致抗蚀剂层来形成具有声音形状和小尺寸的图案化硬掩模层，并且使用图案化的硬掩模层来形成栅极。此后，通过形成和限定盖层，通过在衬底中的蚀刻形成凹陷。在凹槽中形成外延层之后去除图案化的硬掩模。因此，可以避免导致接触桥的常规多晶块问题和STI氧化物损耗问题。

7. 发明申请

US20090166625A1 MOS DEVICE STRUCTURE 审中-公开
标题翻译： MOS器件结构
公开(公告)号：US20090166625A1
公开(公告)日：2009-07-02
申请号：US11966734
申请日：2007-12-28
申请人： Shyh-Fann Ting , Shih-Chieh Hsu , Cheng-Tung Huang , Chih-Chiang Wu , Wen-Han Hung , Meng-Yi Wu , Li-Shian Jeng , Chung-Min Shih , Kun-Hsien Lee , Tzyy-Ming Cheng
发明人： Shyh-Fann Ting , Shih-Chieh Hsu , Cheng-Tung Huang , Chih-Chiang Wu , Wen-Han Hung , Meng-Yi Wu , Li-Shian Jeng , Chung-Min Shih , Kun-Hsien Lee , Tzyy-Ming Cheng
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L29/7848 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： The present invention provides a method for forming a metal-oxide-semiconductor (MOS) device and the structure thereof. The method includes at least the steps of forming a silicon germanium layer by the first selective epitaxy growth process and forming a cap layer on the silicon germanium layer by the second selective epitaxy growth process. Hence, the undesirable effects caused by ion implantation can be mitigated.
摘要翻译：本发明提供一种形成金属氧化物半导体（MOS）器件的方法及其结构。该方法至少包括通过第一选择性外延生长工艺形成硅锗层并通过第二选择性外延生长工艺在硅锗层上形成覆盖层的步骤。因此，可以减轻离子注入引起的不良影响。

8. 发明授权

US07528045B2 MOS transistor and manufacturing methods thereof 有权
标题翻译： MOS晶体管及其制造方法
公开(公告)号：US07528045B2
公开(公告)日：2009-05-05
申请号：US11669164
申请日：2007-01-31
申请人： Chih-Chiang Wu , Shih-Fang Tzou , Shih-Chieh Hsu , Jen-Hong Huang
发明人： Chih-Chiang Wu , Shih-Fang Tzou , Shih-Chieh Hsu , Jen-Hong Huang
IPC分类号： H01L21/8238
CPC分类号： H01L29/7848 , H01L21/28518 , H01L21/76232 , H01L29/665 , H01L29/6659 , H01L29/66636
摘要： A method for manufacturing a metal-oxide semiconductor (MOS) transistor includes providing a substrate having at least a gate structure and a shallow trench isolation (STI) formed thereon, performing a first etching process to form recesses in the substrate respectively at two sides of the gate structure, performing a selective epitaxial growth (SEG) process to form epitaxial silicon layers in the recesses respectively, accordingly a seam is formed in between the epitaxial silicon layer and the STI, forming a dielectric layer in the seam, and performing a self-aligned silicide (salicide) process.
摘要翻译：一种制造金属氧化物半导体（MOS）晶体管的方法，包括提供至少具有栅极结构和在其上形成的浅沟槽隔离（STI）的衬底，执行第一蚀刻工艺以在衬底的两侧分别在衬底中形成凹槽栅极结构，分别进行选择性外延生长（SEG）工艺以形成外延硅层，因此在外延硅层和STI之间形成接缝，在接缝中形成介电层，并进行自我对准的硅化物（自杀剂）工艺。

9. 发明申请

US20080179626A1 MOS TRANSISTOR AND MANUFACTURING METHODS THEREOF 有权
标题翻译： MOS晶体管及其制造方法
公开(公告)号：US20080179626A1
公开(公告)日：2008-07-31
申请号：US11669164
申请日：2007-01-31
申请人： Chih-Chiang Wu , Shih-Fang Tzou , Shih-Chieh Hsu , Jen-Hong Huang
发明人： Chih-Chiang Wu , Shih-Fang Tzou , Shih-Chieh Hsu , Jen-Hong Huang
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/7848 , H01L21/28518 , H01L21/76232 , H01L29/665 , H01L29/6659 , H01L29/66636
摘要： A method for manufacturing a metal-oxide semiconductor (MOS) transistor includes providing a substrate having at least a gate structure and a shallow trench isolation (STI) formed thereon, performing a first etching process to form recesses in the substrate respectively at two sides of the gate structure, performing a selective epitaxial growth (SEG) process to form epitaxial silicon layers in the recesses respectively, accordingly a seam is formed in between the epitaxial silicon layer and the STI, forming a dielectric layer in the seam, and performing a self-aligned silicide (salicide) process.
摘要翻译：一种制造金属氧化物半导体（MOS）晶体管的方法，包括提供至少具有栅极结构和在其上形成的浅沟槽隔离（STI）的衬底，执行第一蚀刻工艺以在衬底的两侧分别在衬底中形成凹槽栅极结构，分别进行选择性外延生长（SEG）工艺以形成外延硅层，因此在外延硅层和STI之间形成接缝，在接缝中形成介电层，并进行自我对准的硅化物（自杀剂）工艺。

10. 发明授权

US08222113B2 Method of forming MOS device 有权
标题翻译：形成MOS器件的方法
公开(公告)号：US08222113B2
公开(公告)日：2012-07-17
申请号：US12469135
申请日：2009-05-20
申请人： Shyh-Fann Ting , Shih-Chieh Hsu , Cheng-Tung Huang , Chih-Chiang Wu , Wen-Han Hung , Meng-Yi Wu , Li-Shian Jeng , Chung-Min Shih , Kun-Hsien Lee , Tzyy-Ming Cheng
发明人： Shyh-Fann Ting , Shih-Chieh Hsu , Cheng-Tung Huang , Chih-Chiang Wu , Wen-Han Hung , Meng-Yi Wu , Li-Shian Jeng , Chung-Min Shih , Kun-Hsien Lee , Tzyy-Ming Cheng
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： A method for forming a metal-oxide-semiconductor (MOS) device includes at least steps of forming a pair of trenches in a substrate at both sides of a gate structure, filling the trenches with a silicon germanium layer by a selective epitaxy growth process, forming a cap layer on the silicon germanium layer by a selective growth process, and forming a pair of source/drain regions by performing an ion implantation process. Hence, the undesirable effects caused by ion implantation can be mitigated.
摘要翻译：形成金属氧化物半导体（MOS）器件的方法至少包括以下步骤：在栅极结构两侧的衬底中形成一对沟槽，通过选择性外延生长工艺用硅锗层填充沟槽，通过选择性生长工艺在硅锗层上形成盖层，并通过进行离子注入工艺形成一对源/漏区。因此，可以减轻离子注入引起的不良影响。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式