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    • 5. 发明授权
    • Pixel structure and fabricating method thereof
    • 像素结构及其制造方法
    • US07268025B2
    • 2007-09-11
    • US11162901
    • 2005-09-28
    • Chih-Hung ChiangDaisuke Nishino
    • Chih-Hung ChiangDaisuke Nishino
    • H01L21/00
    • G02F1/136227G02F1/136213
    • A pixel structure and a fabricating method thereof are described. The method comprises forming a conductive layer, a data line and a source/drain at the same time. The conductive layer has a coupling portion and a connecting portion. The coupling portion is used as a top electrode of a pixel storage capacitor, and the connecting portion connects the coupling portion and the drain. Thereafter, a contact window is defined on the connecting portion, and a pixel electrode formed subsequently can be electrically connected to the connecting portion through the contact window. Thus, the pixel electrode, the conductive layer (includes the coupling portion) and the drain are electrically connected each other. Since the contact window is not formed above the pixel storage capacitor, the leakage of the pixel storage capacitor will not occur when the etching process of the contact window etches away the gate insulating layer.
    • 描述像素结构及其制造方法。 该方法包括同时形成导电层,数据线和源极/漏极。 导电层具有连接部分和连接部分。 耦合部分用作像素存储电容器的顶电极,连接部分连接耦合部分和漏极。 此后,在连接部分上形成接触窗口,随后形成的像素电极可以通过接触窗口电连接到连接部分。 因此,像素电极,导电层(包括耦合部分)和漏极彼此电连接。 由于接触窗口不形成在像素保持电容器的上方,所以当接触窗口的蚀刻处理蚀刻栅极绝缘层时,不会发生像素保持电容器的泄漏。
    • 7. 发明申请
    • PIXEL STRUCTURE AND FABRICATING METHOD THEREOF
    • 像素结构及其制作方法
    • US20060033101A1
    • 2006-02-16
    • US11162901
    • 2005-09-28
    • Chih-Hung ChiangDaisuke Nishino
    • Chih-Hung ChiangDaisuke Nishino
    • H01L29/04
    • G02F1/136227G02F1/136213
    • A pixel structure and a fabricating method thereof are described. The method comprises forming a conductive layer, a data line and a source/drain at the same time. The conductive layer has a coupling portion and a connecting portion. The coupling portion is used as a top electrode of a pixel storage capacitor, and the connecting portion connects the coupling portion and the drain. Thereafter, a contact window is defined on the connecting portion, and a pixel electrode formed subsequently can be electrically connected to the connecting portion through the contact window. Thus, the pixel electrode, the conductive layer (includes the coupling portion) and the drain are electrically connected each other. Since the contact window is not formed above the pixel storage capacitor, the leakage of the pixel storage capacitor will not occur when the etching process of the contact window etches away the gate insulating layer.
    • 描述像素结构及其制造方法。 该方法包括同时形成导电层,数据线和源极/漏极。 导电层具有连接部分和连接部分。 耦合部分用作像素存储电容器的顶电极,连接部分连接耦合部分和漏极。 此后,在连接部分上形成接触窗口,随后形成的像素电极可以通过接触窗口电连接到连接部分。 因此,像素电极,导电层(包括耦合部分)和漏极彼此电连接。 由于接触窗口不形成在像素保持电容器的上方,所以当接触窗口的蚀刻处理蚀刻栅极绝缘层时,不会发生像素保持电容器的泄漏。
    • 8. 发明申请
    • [PIXEL STRUCTURE AND FABRICATING METHOD THEREOF]
    • [像素结构及其制作方法]
    • US20050036079A1
    • 2005-02-17
    • US10605323
    • 2003-09-23
    • CHIH-HUNG CHIANGDAISUKE NISHINO
    • CHIH-HUNG CHIANGDAISUKE NISHINO
    • G02F1/1362G02F1/136
    • G02F1/136227G02F1/136213
    • A pixel structure and a fabricating method thereof are described. The method comprises forming a conductive layer, a data line and a source/drain at the same time. The conductive layer has a coupling portion and a connecting portion. The coupling portion is used as a top electrode of a pixel storage capacitor, and the connecting portion connects the coupling portion and the drain. Thereafter, a contact window is defined on the connecting portion, and a pixel electrode formed subsequently can be electrically connected to the connecting portion through the contact window. Thus, the pixel electrode, the conductive layer (includes the coupling portion) and the drain are electrically connected each other. Since the contact window is not formed above the pixel storage capacitor, the leakage of the pixel storage capacitor will not occur when the etching process of the contact window etches away the gate insulating layer.
    • 描述像素结构及其制造方法。 该方法包括同时形成导电层,数据线和源极/漏极。 导电层具有连接部分和连接部分。 耦合部分用作像素存储电容器的顶电极,连接部分连接耦合部分和漏极。 此后,在连接部分上形成接触窗口,随后形成的像素电极可以通过接触窗口电连接到连接部分。 因此,像素电极,导电层(包括耦合部分)和漏极彼此电连接。 由于接触窗口不形成在像素保持电容器的上方,所以当接触窗口的蚀刻处理蚀刻栅极绝缘层时,不会发生像素保持电容器的泄漏。
    • 9. 发明申请
    • CIRCUIT MODULE AND CIRCUIT BOARD ASSEMBLY HAVING SIP CONNECTOR
    • 具有SIP连接器的电路模块和电路板组件
    • US20090097211A1
    • 2009-04-16
    • US12035524
    • 2008-02-22
    • Tsu-Cheng ChenChih-Hung ChiangKai-Hung HuangYi-Hwa Hsieh
    • Tsu-Cheng ChenChih-Hung ChiangKai-Hung HuangYi-Hwa Hsieh
    • H05K1/14
    • H05K9/00H05K1/144H05K2201/042H05K2201/10303H05K2201/10871
    • A circuit module to be mounted on a system board having multiple through holes is disclosed. The circuit module includes a circuit board, multiple SIP connectors and multiple sheathing elements. Each of the SIP connectors includes a connecting part disposed at a first end thereof and fixed on the circuit board and an insertion part disposed at a second end thereof. Each of the sheathing elements includes a plurality of clamping arms and a receiving portion. The receiving portion is defined by the clamping arms for receiving the insertion part of a corresponding SIP connector. The insertion part is clamped by the clamping arms such that the sheathing element is fixed on the SIP connector. The sheathing element is sustained against a surface of the system board after the insertion part is inserted into a corresponding through hole of the system board, so that the support area between the SIP connector and the system board is increased.
    • 公开了一种要安装在具有多个通孔的系统板上的电路模块。 电路模块包括电路板,多个SIP连接器和多个护套元件。 每个SIP连接器包括设置在其第一端并固定在电路板上的连接部分和设置在其第二端的插入部分。 每个护套元件包括多个夹持臂和接收部分。 接收部分由用于接收相应SIP连接器的插入部分的夹持臂限定。 插入部被夹持臂夹紧,使得护套元件固定在SIP连接器上。 在将插入部插入系统板的相应通孔中之后,护套元件被支撑在系统板的表面上,从而增加了SIP连接器与系统板之间的支撑区域。
    • 10. 发明授权
    • Pixel structure and fabricating method thereof
    • 像素结构及其制造方法
    • US06999135B2
    • 2006-02-14
    • US10605323
    • 2003-09-23
    • Chih-Hung ChiangDaisuke Nishino
    • Chih-Hung ChiangDaisuke Nishino
    • G02F1/136
    • G02F1/136227G02F1/136213
    • A pixel structure and a fabricating method thereof are described. The method comprises forming a conductive layer, a data line and a source/drain at the same time. The conductive layer has a coupling portion and a connecting portion. The coupling portion is used as a top electrode of a pixel storage capacitor, and the connecting portion connects the coupling portion and the drain. Thereafter, a contact window is defined on the connecting portion, and a pixel electrode formed subsequently can be electrically connected to the connecting portion through the contact window. Thus, the pixel electrode, the conductive layer (includes the coupling portion) and the drain are electrically connected each other. Since the contact window is not formed above the pixel storage capacitor, the leakage of the pixel storage capacitor will not occur when the etching process of the contact window etches away the gate insulating layer.
    • 描述像素结构及其制造方法。 该方法包括同时形成导电层,数据线和源极/漏极。 导电层具有连接部分和连接部分。 耦合部分用作像素存储电容器的顶电极,连接部分连接耦合部分和漏极。 此后,在连接部分上形成接触窗口,随后形成的像素电极可以通过接触窗口电连接到连接部分。 因此,像素电极,导电层(包括耦合部分)和漏极彼此电连接。 由于接触窗口不形成在像素保持电容器的上方,所以当接触窗口的蚀刻处理蚀刻栅极绝缘层时,不会发生像素保持电容器的泄漏。