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1. 发明授权

US08216917B2 Method for fabricating a semiconductor on insulator type substrate 有权
标题翻译：绝缘子半导体衬底的制造方法
公开(公告)号：US08216917B2
公开(公告)日：2012-07-10
申请号：US12863904
申请日：2009-01-29
申请人： Christophe Maleville
发明人： Christophe Maleville
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/02079 , Y10S438/977
摘要： A method for fabricating a substrate of the semiconductor on insulator type by forming an epitaxial layer of semiconducting material on a donor substrate having oxygen precipitates with a density of less than 1010/cm3 or a mean size of less than 500 nm, forming an oxide layer on either a donor or receiver substrate, implanting atomic species in the donor substrate to form a weakened zone in the epitaxial layer, bonding the donor and receiver substrates together, with the oxide layer present at the bonding interface, fracturing the donor substrate in the weakened zone to transfer a layer of the donor substrate to the receiver substrate with the transferred layer including the epitaxial layer, and recycling the remainder of the donor substrate to form a receiver substrate for fabrication of a second semiconductor on insulator type substrate.
摘要翻译：一种通过在具有小于1010 / cm3或小于500nm的密度的氧沉淀物的施主衬底上形成半导体材料的外延层来制造绝缘体上半导体衬底的方法，形成氧化物层在施主或接收器衬底上，在施主衬底中植入原子物质以在外延层中形成弱化区，将施主和接收衬底结合在一起，氧化层存在于接合界面处，将施主衬底压裂在弱化层区域，其中所述转移层包括所述外延层将所述施主衬底的层转移到所述接收器衬底，以及再循环所述施主衬底的其余部分以形成用于制造第二半导体绝缘体型衬底的接收器衬底。

2. 发明授权

US07883994B2 Process for the transfer of a thin film 有权
标题翻译：薄膜转印工艺
公开(公告)号：US07883994B2
公开(公告)日：2011-02-08
申请号：US11747733
申请日：2007-05-11
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/265
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

3. 发明授权

US07645392B2 Methods for preparing a bonding surface of a semiconductor wafer 有权
标题翻译：制备半导体晶片的接合表面的方法
公开(公告)号：US07645392B2
公开(公告)日：2010-01-12
申请号：US11472665
申请日：2006-06-21
申请人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
发明人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
IPC分类号： B44C1/22
CPC分类号： H01L21/76254
摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.
摘要翻译：一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。该方法包括用NH 4 OH / H 2 O 2溶液处理氧化表面，处理参数足以从晶片表面蚀刻约大约至大约120埃，然后在低于约50℃的温度下用盐酸处理蚀刻的表面持续时间少于约10分钟以从氧化表面除去分离的颗粒。该方法清洁晶片表面而不会增加粗糙度或在其上产生粗糙的贴片，从而提供了当这些表面粘接在一起时能够在第一和第二晶片之间提供增加的结合能的清洁表面。该清洁方法有利地用于薄层去除工艺以制造绝缘体上半导体结构。

4. 发明授权

US07465645B2 Method of detaching a layer from a wafer using a localized starting area 有权
标题翻译：使用局部起始区域从晶片分离层的方法
公开(公告)号：US07465645B2
公开(公告)日：2008-12-16
申请号：US10766207
申请日：2004-01-29
申请人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
发明人： Walter Schwarzenbach , Christophe Maleville , Nadia Ben Mohamed
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L21/76254
摘要： A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.
摘要翻译：一种从晶片上分离层的方法。在晶片中产生弱化区以限定待分离的层和晶片的剩余部分，使得弱化区域包括主区域和比主区域更弱的局部超弱化区域。在超弱化区域处开始从晶片的剩余部分分离层，使得到主区域的剥离性能使层与剩余部分分离。

5. 发明申请

US20070026692A1 Method for applying a high temperature heat treatment to a semiconductor wafer 失效
标题翻译：向半导体晶片施加高温热处理的方法
公开(公告)号：US20070026692A1
公开(公告)日：2007-02-01
申请号：US11529959
申请日：2006-09-29
申请人： Christophe Maleville , Walter Schwarzenbach , Vivien Renauld
发明人： Christophe Maleville , Walter Schwarzenbach , Vivien Renauld
IPC分类号： H01L21/00
CPC分类号： H01L21/02255 , H01L21/02238 , H01L21/31658 , H01L21/67098
摘要： The invention provides methods for applying high temperature treatments to semiconductor wafers that limit surface tearing-off defects and surface particle contamination. In preferred embodiments, the high temperature treatments begin at boat-in temperatures of less than about 550° C. and include a first temperature ramp-up to the HT treatment temperatures at rates of 6° C./min or less. These methods are advantageously applied to semiconductor wafers comprising layers of different thermal properties, and in particular to semiconductor wafers comprising silicon-on-insulator structures.
摘要翻译：本发明提供了对限制表面撕裂缺陷和表面颗粒污染的半导体晶片施加高温处理的方法。在优选的实施方案中，高温处理从低于约550℃的船上温度开始，并且包括以6℃/ min或更低的速率升温至HT处理温度的第一温度。这些方法有利地应用于包含不同热性质层的半导体晶片，特别是涉及包括绝缘体上硅结构的半导体晶片。

6. 发明申请

US20060273068A1 Methods for preparing a bonding surface of a semiconductor wafer 有权
标题翻译：制备半导体晶片的接合表面的方法
公开(公告)号：US20060273068A1
公开(公告)日：2006-12-07
申请号：US11472665
申请日：2006-06-21
申请人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
发明人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
IPC分类号： B44C1/22
CPC分类号： H01L21/76254
摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.
摘要翻译：一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。该方法包括在处理参数下处理含有NH 4 OH / H 2 O 2 O 2的溶液的氧化表面，所述处理参数足以蚀刻至约约120埃，然后在低于约50℃的温度下用盐酸物质处理蚀刻表面，持续时间小于约10分钟以从氧化表面除去分离的颗粒。该方法清洁晶片表面而不会增加粗糙度或在其上产生粗糙的贴片，从而提供了当这些表面粘接在一起时能够在第一和第二晶片之间提供增加的结合能的清洁表面。该清洁方法有利地用于薄层去除工艺以制造绝缘体上半导体结构。

7. 发明申请

US20050094990A1 Heat treatment for edges of multilayer semiconductor wafers 有权
标题翻译：多层半导体晶片边缘的热处理
公开(公告)号：US20050094990A1
公开(公告)日：2005-05-05
申请号：US11008928
申请日：2004-12-13
申请人： Eric Neyret , Christophe Maleville
发明人： Eric Neyret , Christophe Maleville
IPC分类号： H01L21/00 , H01L21/324 , H01L21/762 , H01L21/3205 , A21B2/00 , F26B19/00 , H01L21/26 , H01L21/42 , H01L21/4763 , H01L21/477
CPC分类号： H01L21/3247 , H01L21/67103 , H01L21/76251 , H01L21/76254
摘要： A method for heat treating a multilayer semiconductor wafer having a central region and a peripheral edge each having a surface. The method includes selecting thickness values for the layers of the wafer to provide substantially equivalent heat absorption coefficients both in the central region and the edge of the wafer. This results in a substantially equivalent temperature being attained over the surface of the central region and the peripheral edge during thermal treatment. In turn, that prevents the appearance of slip lines on those surfaces while also preventing deformation of the wafer due to the thermal treatment. To achieve the desired thickness, layers or portions of layers can be selectively added or otherwise provided upon the central region or peripheral edge of the wafer, or on both, to modify the heat absorption coefficient of the wafer.
摘要翻译：一种用于热处理具有各自具有表面的中心区域和周缘的多层半导体晶片的方法。该方法包括选择晶片层的厚度值，以在晶片的中心区域和边缘提供基本相等的吸热系数。这导致在热处理期间在中心区域和外围边缘的表面上获得基本相当的温度。反过来，这也防止了在这些表面上的滑动线的出现，同时也防止了由于热处理导致的晶片的变形。为了实现所需的厚度，层或层的一部分可以选择性地添加或以其他方式设置在晶片的中心区域或周边边缘上，或者在两者上，以改变晶片的吸热系数。

8. 发明授权

US06884697B2 Process for cleaving a wafer layer from a donor wafer 有权
标题翻译：从供体晶片切割晶片层的工艺
公开(公告)号：US06884697B2
公开(公告)日：2005-04-26
申请号：US10341254
申请日：2003-01-14
申请人： Walter Schwarzenbach , Christophe Maleville
发明人： Walter Schwarzenbach , Christophe Maleville
IPC分类号： H01L21/265 , H01L21/02 , H01L21/20 , H01L21/762 , H01L27/12 , H01L21/301
CPC分类号： H01L21/2007 , H01L21/76254
摘要： The invention relates to improvements in a process and annealing device for cleaving a wafer layer along a weakened zone in a donor wafer using a thermal anneal. In one improvement, at least one donor wafer is provided in a substantially horizontal position during the thermal anneal to prepare a wafer layer which, after detachment, has a cleaved surface with reduced surface roughness irregularities. The donor wafer can be preferably placed inside a chamber between two heating electrodes during the thermal anneal. The thermal anneal can be conducted to detach the wafer layer or the donor wafer to mechanical action to detach the wafer layer after the thermal anneal is conducted. Either way, a cleaved surface is provided on the detached wafer layer that does not include isolated dense areas adjacent the wafer layer periphery.
摘要翻译：本发明涉及用于使用热退火在供体晶片中沿着弱化区切割晶片层的工艺和退火装置的改进。在一个改进中，在热退火期间，将至少一个施主晶片设置在基本水平的位置，以制备晶片层，该晶片层在分离之后具有具有降低的表面粗糙度不均匀性的切割表面。在热退火期间，施主晶片可以优选地放置在两个加热电极之间的室内。可以进行热退火以将晶片层或施主晶片分离，以在进行热退火之后剥离晶片层的机械作用。无论哪种方式，在分离的晶片层上提供了切割表面，其不包括与晶片层周边相邻的孤立的密集区域。

9. 发明授权

US06828216B2 Process for detaching layers of material 有权
标题翻译：拆卸材料层的工艺
公开(公告)号：US06828216B2
公开(公告)日：2004-12-07
申请号：US10426717
申请日：2003-05-01
申请人： Walter Schwarzenbach , Christophe Maleville
发明人： Walter Schwarzenbach , Christophe Maleville
IPC分类号： H01L2130
CPC分类号： H01L21/76254
摘要： A process for detaching two layers of material according to a weakened zone defined between the layers. This process includes the thermal annealing of a structure that incorporates the layers, with the annealing bringing the temperature from a starting temperature to a final annealing temperature while evolving according to a first phase up to a transition temperature, then according to a second phase during which the rise in temperature per unit of time is greater than that of the first phase. The invention also concerns an application for using this process in a particular semiconductor fabrication technique.
摘要翻译：根据层之间限定的弱化区域分离两层材料的方法。该方法包括对包含这些层的结构的热退火，退火使温度从起始温度到最终退火温度，同时根据第一阶段直至转变温度放出，然后根据第二阶段单位时间内的温度上升大于第一阶段的温度上升。本发明还涉及在特定的半导体制造技术中使用该方法的应用。

10. 发明授权

US06756286B1 Method for transferring a thin film comprising a step of generating inclusions 有权
标题翻译：用于转印薄膜的方法，包括产生夹杂物的步骤
公开(公告)号：US06756286B1
公开(公告)日：2004-06-29
申请号：US09380322
申请日：1999-11-22
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21265
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transfer of at least one thin film of solid material delimited in an initial substrate. The process includes a step in which a layer of inclusions is formed in the initial substrate at a depth corresponding to the required thickness of the thin film. These inclusions are designed to form traps for gaseous compounds which subsequently are implanted. In a subsequent step gaseous compounds are implanted in a manner to convey the gaseous compounds into the layer of inclusions. The dose of implanted gaseous compounds is made sufficient to cause the formation of micro-cavities to form a fracture plane along which the thin film can be separated from the remainder of the substrate.
摘要翻译：用于转移在初始底物中限定的至少一种固体材料薄膜的方法。该方法包括一个步骤，其中在初始衬底中形成一层夹杂物，其深度对应于薄膜的所需厚度。这些夹杂物被设计成形成随后被植入的气态化合物的阱。在随后的步骤中，以将气态化合物输送到夹杂层中的方式注入气态化合物。植入的气态化合物的剂量足以引起微孔的形成以形成断裂平面，沿着该断裂面，薄膜可以与基底的其余部分分离。

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