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1. 发明授权

US07738113B1 Wafer measurement system and apparatus 有权
标题翻译：晶圆测量系统和仪器
公开(公告)号：US07738113B1
公开(公告)日：2010-06-15
申请号：US11978881
申请日：2007-10-29
申请人： David S. Marx , David L. Grant , Michael A. Mahoney , Tsan Yuen Chan
发明人： David S. Marx , David L. Grant , Michael A. Mahoney , Tsan Yuen Chan
IPC分类号： G01B11/02
CPC分类号： H01L22/12
摘要： A method and apparatus for the measurement of wafer thickness, flatness and the trench depth of any trenches etched thereon using the back surface of the wafer to accurately measure the back side of a trench, rendering the trench an effective bump, capable of being measured on the top surface and the bottom surface through a non-contact optical instrument that simultaneously measures the wavelength of the top surface and bottom surface of the wafer, converting the distance between wavelengths to a thickness measurement, using a light source that renders the material of which the wafer is composed transparent in that wavelength range, i.e., using the near infrared region for measuring the thickness and trench depth measurement of wafers made of silicon, which is opaque in the visible region and transparent in the near infrared region. Thickness and flatness, as well as localized shape, can also be measured using a calibration method that utilizes a pair of optical styli.
摘要翻译：一种用于测量其上蚀刻的任何沟槽的晶片厚度，平坦度和沟槽深度的方法和装置，其使用晶片的背面来精确测量沟槽的背面，使沟槽成为有效的凸起，能够在通过非接触式光学仪器的顶表面和底表面，其同时测量晶片的顶表面和底表面的波长，将波长之间的距离转换成厚度测量，使用使其材料的光源该晶片在该波长范围内是透明的，即，使用近红外区域来测量在可见光区域中不透明且在近红外区域中透明的由硅制成的晶片的厚度和沟槽深度测量。也可以使用利用一对光学测针的校准方法来测量厚度和平坦度以及局部形状。

2. 发明授权

US06710864B1 Concentricity measuring instrument for a fiberoptic cable end 失效
标题翻译：光纤电缆端的同心度测量仪
公开(公告)号：US06710864B1
公开(公告)日：2004-03-23
申请号：US10382669
申请日：2003-03-05
申请人： David L. Grant , David S. Marx
发明人： David L. Grant , David S. Marx
IPC分类号： G01N2100
CPC分类号： G01M11/35 , G02B6/3843
摘要： An apparatus and method of ascertaining the position of a core within a fiberoptic cable and calculating the position of the core relative to the cladding and jacket of the fiberoptic cable. The apparatus provides for observing of the end of the fiberoptic cable by using grazing incident illumination which causes the diameter of the core, the diameter of the cladding and the diameter of the jacket of the fiberoptic cable to be readily observed and then utilizing of a microscope and associated software to read the average diameter of the core and its position relative to the average diameter of the cladding and the average diameter of the jacket which will then make a determination as to how far off center the core is relative to the cladding and the jacket.
摘要翻译：确定纤维光缆内的芯的位置并计算芯相对于光纤电缆的包层和护套的位置的装置和方法。该装置通过使用放射入射照明来观察光纤光缆的端部，其使芯线的直径，包层的直径和光纤电缆的护套的直径容易地观察，然后利用显微镜以及相关软件以读取芯的平均直径及其相对于包层的平均直径的位置以及夹套的平均直径，然后将确定芯的相对于包层的中心距离以及夹克。

3. 发明申请

US20110292375A1 System for directly measuring the depth of a high aspect ratio etched feature on a wafer 有权
标题翻译：用于直接测量晶片上的高纵横比蚀刻特征的深度的系统
公开(公告)号：US20110292375A1
公开(公告)日：2011-12-01
申请号：US13134716
申请日：2011-06-15
申请人： David S. Marx , David L. Grant
发明人： David S. Marx , David L. Grant
IPC分类号： G01N21/55 , G01B11/22 , G01B11/02
CPC分类号： G01B11/22 , G01B11/0633 , G01B11/0675 , G01B2210/56
摘要： A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).
摘要翻译：一种用于直接测量包括蚀刻表面（82）和非蚀刻表面（84）的晶片（80）上的高纵横比蚀刻特征的深度的系统（10）。系统（10）利用红外反射计（12），在优选实施例中，扫描激光器（14），光纤循环器（16），光电检测器（22）和组合准直仪（18）和物镜（20））。从物镜（20），产生被施加到晶片（80）的未蚀刻表面（84）的聚焦入射光（23）。从晶片（80）产生的反射光（25）通过反射计（12）处理并被施加到产生相应的数字数据信号（29）的ADC（24）。数字数据信号（29）被应用于与软件（32）组合的计算机（30），其测量在显示器（34）上被观看的蚀刻特征的深度。

4. 发明申请

US20100321671A1 System for directly measuring the depth of a high aspect ratio etched feature on a wafer 审中-公开
标题翻译：用于直接测量晶片上的高纵横比蚀刻特征的深度的系统
公开(公告)号：US20100321671A1
公开(公告)日：2010-12-23
申请号：US12456781
申请日：2009-06-23
申请人： David S. Marx , David L. Grant
发明人： David S. Marx , David L. Grant
IPC分类号： G01B11/22 , G01B11/00 , G01B11/02 , G01J3/00 , G06F15/00
CPC分类号： G01B11/22 , G01B2210/56
摘要： A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).
摘要翻译：一种用于直接测量包括蚀刻表面（82）和非蚀刻表面（84）的晶片（80）上的高纵横比蚀刻特征的深度的系统（10）。系统（10）利用红外反射计（12），在优选实施例中，扫描激光器（14），光纤循环器（16），光电检测器（22）和组合准直仪（18）和物镜（20））。从物镜（20），产生被施加到晶片（80）的未蚀刻表面（84）的聚焦入射光（23）。从晶片（80）产生的反射光（25）通过反射计（12）处理并被施加到产生相应的数字数据信号（29）的ADC（24）。数字数据信号（29）被应用于与软件（32）组合的计算机（30），其测量在显示器（34）上被观看的蚀刻特征的深度。

5. 发明授权

US09714825B2 Wafer shape thickness and trench measurement 有权
公开(公告)号：US09714825B2
公开(公告)日：2017-07-25
申请号：US13066219
申请日：2011-04-08
申请人： David S. Marx , David L. Grant
发明人： David S. Marx , David L. Grant
IPC分类号： G01B11/24 , G01B9/02 , G01B11/06 , G01B11/22 , G01B11/30
CPC分类号： G01B11/2441 , G01B9/02004 , G01B9/0209 , G01B11/06 , G01B11/0675 , G01B11/22 , G01B11/306 , G01B2210/56
摘要： A device (10) and methods for simultaneously measuring the thickness of individual wafer layers, the depth of etched features on a wafer, and the three-dimensional profile of a wafer. The structure of the device (10) is comprised of a source/receiver section (12) having a broadband source (14), a receiver (16) and a signal processing section (20). An interferometer (28) separates or combines measurement and reference light and has a measurement leg (30) and a reference leg (34), and a reference mirror (36). The device (10) analyzes a received spectrum which is comprised of a measurement of intensity versus wavelength. There are two measurement methods disclosed: the first method is utilized for taking a single measurement and the second method is utilized for multiple measurements.

6. 发明申请

US20120257207A1 Wafer shape thickness and trench measurement 有权
标题翻译：晶圆形状厚度和沟槽测量
公开(公告)号：US20120257207A1
公开(公告)日：2012-10-11
申请号：US13066219
申请日：2011-04-08
申请人： David S. Marx , David L. Grant
发明人： David S. Marx , David L. Grant
IPC分类号： G01B9/02
CPC分类号： G01B11/2441 , G01B9/02004 , G01B9/0209 , G01B11/06 , G01B11/0675 , G01B11/22 , G01B11/306 , G01B2210/56
摘要： A device (10) and methods for simultaneously measuring the thickness of individual wafer layers, the depth of etched features on a wafer, and the three-dimensional profile of a wafer. The structure of the device (10) is comprised of a source/receiver section (12) having a broadband source (14), a receiver (16) and a signal processing section (20). An interferometer (28) separates or combines measurement and reference light and has a measurement leg (30) and a reference leg (34), and a reference mirror (36). The device (10) analyzes a received spectrum which is comprised of a measurement of intensity versus wavelength. There are two measurement methods disclosed: the first method is utilized for taking a single measurement and the second method is utilized for multiple measurements.
摘要翻译：一种用于同时测量单个晶片层的厚度，晶片上蚀刻特征的深度以及晶片的三维轮廓的装置（10）和方法。设备（10）的结构由具有宽带源（14）的源/接收器部分（12），接收器（16）和信号处理部分（20）组成。干涉仪（28）分离或组合测量和参考光，并具有测量腿（30）和参考腿（34）以及参考镜（36）。器件（10）分析由强度对波长的测量组成的接收光谱。公开了两种测量方法：第一种方法用于进行单次测量，第二种方法用于多次测量。

7. 发明授权

US07477401B2 Trench measurement system employing a chromatic confocal height sensor and a microscope 有权
标题翻译：使用彩色共焦高度传感器和显微镜的沟槽测量系统
公开(公告)号：US07477401B2
公开(公告)日：2009-01-13
申请号：US11261284
申请日：2005-10-28
申请人： David S. Marx , David L. Grant
发明人： David S. Marx , David L. Grant
IPC分类号： G01B11/24
CPC分类号： G01B11/24 , G01B11/0608 , G01B2210/50 , G02B21/0016 , G02B21/0064
摘要： A system for the measurement of high aspect ratio trenches. The preferred embodiment consists of three elements: a) an integrated microscope and optical height sensor, b) an axially dispersive, afocal lens system, which is included in the optical height sensor, and c) an algorithm for processing the optical height sensor data to produce the depth of the high aspect ratio trench. The present invention combines a traditional imaging microscope with a chromatic confocal, single point, height sensor. This combination instantaneously provides an image of the object and the height value at one point in the image. No mechanical movement is necessary anywhere in the system to achieve that result. The chromatic confocal height sensor is integrated with a traditional microscope through the use of separate wavelength bands such as a wavelength band in the visible part of the spectrum, and a wavelength band in the infrared or ultraviolet part of the spectrum.
摘要翻译：用于测量高纵横比沟槽的系统。优选实施例由三个元件组成：a）集成显微镜和光学高度传感器，b）包括在光学高度传感器中的轴向分散的无焦点透镜系统，以及c）用于处理光学高度传感器数据到产生高纵横比沟槽的深度。本发明将传统成像显微镜与彩色共焦，单点，高度传感器相结合。该组合在图像中的一个位置瞬间提供对象的图像和高度值。系统中任何地方都不需要机械运动来实现这一结果。彩色共焦高度传感器通过使用分离的波长带（例如可见光谱中的波长带）和光谱的红外或紫外线部分中的波长带与传统显微镜一体化。

8. 发明授权

US06782146B2 Multiple polarization combiner-splitter-isolator and method of manufacturing the same 失效
标题翻译：多偏振组合器分离器隔离器及其制造方法
公开(公告)号：US06782146B2
公开(公告)日：2004-08-24
申请号：US09967315
申请日：2001-09-28
申请人： Scott M. Hellman , David S. Marx , Bryan P. Paolini , Paul A. Townley-Smith , Michael Ushinsky
发明人： Scott M. Hellman , David S. Marx , Bryan P. Paolini , Paul A. Townley-Smith , Michael Ushinsky
IPC分类号： G02B627
CPC分类号： G02B6/2746 , G02B6/2706 , G02B6/2773 , G02B6/2843 , G02B6/3636 , G02B6/3644 , G02B6/3652 , G02B6/3692
摘要： A multiple-port optical device combines two polarization combiner-splitters into one package. Two single mode optical fibers are enclosed in a first ferrule of the package and are optically coupled to four polarization maintaining fibers enclosed in a second ferrule of the package. The optical fibers are precisely positioned using improved fiber ferrules comprising various capillary designs. A prism is mounted between the single mode fibers and the polarization maintaining fibers. The fibers are screened for geometric characteristics which aide in precisely positioning the fiber cores. The ferrules, capillaries, fibers, and adhesives are combined to reduce adverse thermal effects over a broad range of environmental conditions. The precise positioning and geometry of the optical fibers aids in optically aligning the elements of both polarization combiner-splitters in the one package. The invention is applicable to related devices such as multiple isolators, combiner-isolators, splitter-isolators, and the like.
摘要翻译：多端口光学器件将两个偏振组合器分离器组合成一个封装。两个单模光纤被封装在封装的第一套圈中，并且光耦合到封装在封装的第二套圈中的四个偏振保持光纤。使用包括各种毛细管设计的改进的光纤套管精确定位光纤。棱镜安装在单模光纤与偏光保持光纤之间。纤维被筛选出几何特性，可以精确地定位纤维芯。组合套管，毛细管，纤维和粘合剂以减少在广泛环境条件下的不利热效应。光纤的精确定位和几何形状有助于将一个封装中的两个偏振组合分离器的元件光学对准。本发明可应用于多个隔离器，组合器隔离器，分离器隔离器等相关设备。

9. 发明授权

US08649016B2 System for directly measuring the depth of a high aspect ratio etched feature on a wafer 有权
标题翻译：用于直接测量晶片上的高纵横比蚀刻特征的深度的系统
公开(公告)号：US08649016B2
公开(公告)日：2014-02-11
申请号：US13134716
申请日：2011-06-15
申请人： David S. Marx , David L. Grant
发明人： David S. Marx , David L. Grant
IPC分类号： G01N21/55 , G01B9/02
CPC分类号： G01B11/22 , G01B11/0633 , G01B11/0675 , G01B2210/56
摘要： A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).
摘要翻译：一种用于直接测量包括蚀刻表面（82）和非蚀刻表面（84）的晶片（80）上的高纵横比蚀刻特征的深度的系统（10）。系统（10）利用红外反射计（12），在优选实施例中，扫描激光器（14），光纤循环器（16），光电检测器（22）和组合准直仪（18）和物镜（20））。从物镜（20），产生被施加到晶片（80）的未蚀刻表面（84）的聚焦入射光（23）。从晶片（80）产生的反射光（25）通过反射计（12）处理并被施加到产生相应的数字数据信号（29）的ADC（24）。数字数据信号（29）被应用于与软件（32）组合的计算机（30），其测量在显示器（34）上被观看的蚀刻特征的深度。

10. 发明申请

US20070148792A1 Wafer measurement system and apparatus 审中-公开
标题翻译：晶圆测量系统和仪器
公开(公告)号：US20070148792A1
公开(公告)日：2007-06-28
申请号：US11527902
申请日：2006-09-26
申请人： David S. Marx , David L. Grant , Michael A. Mahoney , Tsan Yuen Chen
发明人： David S. Marx , David L. Grant , Michael A. Mahoney , Tsan Yuen Chen
IPC分类号： H01L21/66
CPC分类号： H01L22/12
摘要： A method and apparatus for the measurement of wafer thickness, flatness and the trench depth of any trenches etched thereon using the back surface of the wafer to accurately measure the back side of a trench, rendering the trench an effective bump, capable of being measured on the top surface and the bottom surface through a non-contact optical instrument that simultaneously measures the wavelength of the top surface and bottom surface of the wafer, converting the distance between wavelengths to a thickness measurement, using a light source that renders the material of which the wafer is composed transparent in that wavelength range, i.e., using the near infrared region for measuring the thickness and trench depth measurement of wafers made of silicon, which is opaque in the visible region and transparent in the near infrared region. Thickness and flatness, as well as localized shape, can also be measured using a calibration method that utilizes a pair of optical styli.
摘要翻译：一种用于测量其上蚀刻的任何沟槽的晶片厚度，平坦度和沟槽深度的方法和装置，其使用晶片的背面来精确测量沟槽的背面，使沟槽成为有效的凸起，能够在通过非接触式光学仪器的顶表面和底表面，其同时测量晶片的顶表面和底表面的波长，将波长之间的距离转换成厚度测量，使用使其材料的光源该晶片在该波长范围内是透明的，即，使用近红外区域来测量在可见光区域中不透明且在近红外区域中透明的由硅制成的晶片的厚度和沟槽深度测量。也可以使用利用一对光学测针的校准方法来测量厚度和平坦度以及局部形状。

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