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1. 发明授权

US08569681B2 Ambient infrared detection in solid state sensors 有权
标题翻译：固态传感器环境红外检测
公开(公告)号：US08569681B2
公开(公告)日：2013-10-29
申请号：US12813705
申请日：2010-06-11
申请人： Ilia Ovsiannikov , Xuemei Zhang , Dmitri Jerdev
发明人： Ilia Ovsiannikov , Xuemei Zhang , Dmitri Jerdev
IPC分类号： G03B13/02
CPC分类号： H04N5/33 , G03B13/02 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14649 , H04N5/374
摘要： A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.
摘要翻译：固态成像装置包括在传感器上形成的有源像素阵列和红外截止滤波器。可选地，红外线截止滤光器中的狭槽允许红外照明到达传感器以由视觉不透明滤光片覆盖的像素检测，并被限制电荷泄漏的特殊类型的像素包围，并实现红外照明的高动态范围感测。平均红外信号与平均亮度的比率表示到达成像装置的红外线照射量。

2. 发明申请

US20120008018A1 Correction of Non-Uniform Sensitivity in an Image Array 有权
标题翻译：图像阵列中非均匀灵敏度的校正
公开(公告)号：US20120008018A1
公开(公告)日：2012-01-12
申请号：US13237105
申请日：2011-09-20
申请人： Dmitri Jerdev , Igor Subbotin , Ilia Ovsiannikov
发明人： Dmitri Jerdev , Igor Subbotin , Ilia Ovsiannikov
IPC分类号： H04N9/64
CPC分类号： H04N5/3572
摘要： An improved non-uniform sensitivity correction algorithm for use in an imager device (e.g., a CMOS APS). The algorithm provides zones having flexible boundaries which can be reconfigured depending upon the type of lens being used in a given application. Each pixel within each zone is multiplied by a correction factor dependent upon the particular zone while the pixel is being read out from the array. The amount of sensitivity adjustment required for a given pixel depends on the type of lens being used, and the same correction unit can be used with multiple lenses where the zone boundaries and the correction factors are adjusted for each lens. In addition, the algorithm makes adjustments to the zone boundaries based upon a misalignment between the centers of the lens being used and the APS array.
摘要翻译：用于成像器装置（例如，CMOS APS）的改进的非均匀灵敏度校正算法。该算法提供具有灵活边界的区域，其可以根据在给定应用中使用的透镜的类型而被重新配置。每个区域内的每个像素乘以一个校正因子，取决于特定的区域，同时从阵列中读出像素。给定像素所需的灵敏度调整量取决于所使用的透镜的类型，并且相同的校正单元可以与多个透镜一起使用，其中针对每个透镜调整区域边界和校正因子。此外，该算法基于所使用的透镜的中心与APS阵列之间的未对准来对区域边界进行调整。

3. 发明授权

US07612393B2 Active photosensitive structure with buried depletion layer 有权
标题翻译：具有埋层耗尽层的主动感光结构
公开(公告)号：US07612393B2
公开(公告)日：2009-11-03
申请号：US11653860
申请日：2007-01-17
申请人： Dmitri Jerdev , Nail Khaliullin
发明人： Dmitri Jerdev , Nail Khaliullin
IPC分类号： H01L29/80
CPC分类号： H01L27/14679 , H01L31/1126
摘要： An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.
摘要翻译：成像器像素具有感光JFET结构，其具有位于掩埋电荷累积区上方的沟道区。通道区域具有根据累积区域中的累积电荷的电平而变化的电阻特性。在积分期间，入射光使得电子被积聚在掩埋积聚区域内。沟道区域的电阻特性响应于由累积区域积累的电荷产生的场而发生变化。因此，当向通道的一侧施加电压时，从另一侧读出的电流是存储电荷量的特征。

4. 发明授权

US07417677B2 Lag cancellation in CMOS image sensors 有权
标题翻译： CMOS图像传感器的滞后消除
公开(公告)号：US07417677B2
公开(公告)日：2008-08-26
申请号：US10636534
申请日：2003-08-08
申请人： Gennadiy A. Agranov , Dmitri Jerdev
发明人： Gennadiy A. Agranov , Dmitri Jerdev
IPC分类号： H04N5/335 , H04N5/217
CPC分类号： H04N5/3597 , H04N5/374
摘要： A pixel cell with improved lag characteristics without increased noise. The pixel cell according to embodiments of the invention includes a photo-conversion device and a floating diffusion region switchably coupled to the photo-conversion device. The pixel cell includes a reset transistor, which has a first terminal electrically connected to the floating diffusion region and a second terminal switchably coupled to first and second voltage sources. The first voltage source is higher than the second voltage source. The pixel cell operates by returning a potential on the photo-conversion device to a value approximately equal to a value of a potential barrier between the photo-conversion device and the floating diffusion region prior to generating charge in the photo-conversion device.
摘要翻译：具有改进的滞后特性而不增加噪声的像素单元。根据本发明的实施例的像素单元包括光转换装置和可转换地耦合到光转换装置的浮动扩散区域。像素单元包括复位晶体管，其具有电连接到浮动扩散区域的第一端子和可切换地耦合到第一和第二电压源的第二端子。第一电压源高于第二电压源。像素单元通过在光转换装置中产生电荷之前将光转换装置上的电位返回到大致等于光转换装置和浮动扩散区域之间的势垒的值的值来操作。

5. 发明申请

US20080056707A1 Ambient infrared detection in solid state sensors 有权
标题翻译：固态传感器环境红外检测
公开(公告)号：US20080056707A1
公开(公告)日：2008-03-06
申请号：US11513582
申请日：2006-08-31
申请人： Ilia Ovsiannikov , Xuemei Zhang , Dmitri Jerdev
发明人： Ilia Ovsiannikov , Xuemei Zhang , Dmitri Jerdev
IPC分类号： G03B13/02
CPC分类号： H04N5/33 , G03B13/02 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14649 , H04N5/374
摘要： A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.
摘要翻译：固态成像装置包括在传感器上形成的有源像素阵列和红外截止滤波器。可选地，红外线截止滤光器中的狭槽允许红外照明到达传感器以由视觉不透明滤光片覆盖的像素检测，并被限制电荷泄漏的特殊类型的像素包围，并实现红外照明的高动态范围感测。平均红外信号与平均亮度的比率表示到达成像装置的红外线照射量。

6. 发明申请

US20070133893A1 Method and apparatus for image noise reduction 审中-公开
标题翻译：减少图像噪声的方法和装置
公开(公告)号：US20070133893A1
公开(公告)日：2007-06-14
申请号：US11302120
申请日：2005-12-14
申请人： Dmitri Jerdev
发明人： Dmitri Jerdev
IPC分类号： G06K9/40
CPC分类号： G06T5/20 , G06T5/002 , G06T2207/10024 , H04N5/357 , H04N5/3675
摘要： A method and apparatus that allows for image denoising in an imaging device. The method and implementing apparatus selects a kernel, which includes neighboring pixel pairs for a identified pixel, determines average output signal values for pixel pairs in the correction kernel, determines the difference in the average values and the identified pixel's value, compares the difference values to a threshold and incorporates selected average pixel pair values into the identified pixel's value for pixel pairs having difference values equal to or less than or equal to the threshold value.
摘要翻译：允许在成像装置中进行图像去噪的方法和装置。所述方法和实现装置选择包括所识别的像素的相邻像素对的核，确定校正内核中的像素对的平均输出信号值，确定平均值和识别的像素值之间的差异，将差值与阈值，并且将所选择的平均像素对值并入具有等于或小于或等于阈值的差值的像素对的所识别的像素值中。

7. 发明申请

US20070114584A1 Active photosensitive structure with buried depletion layer 有权
标题翻译：具有埋层耗尽层的主动感光结构
公开(公告)号：US20070114584A1
公开(公告)日：2007-05-24
申请号：US11649777
申请日：2007-01-05
申请人： Dmitri Jerdev , Nail Khaliullin
发明人： Dmitri Jerdev , Nail Khaliullin
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14679 , H01L31/1126
摘要： An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.
摘要翻译：成像器像素具有感光JFET结构，其具有位于掩埋电荷累积区上方的沟道区。通道区域具有根据累积区域中的累积电荷的电平而变化的电阻特性。在积分期间，入射光使得电子被积聚在掩埋积聚区域内。沟道区域的电阻特性响应于由累积区域积累的电荷产生的场而发生变化。因此，当向通道的一侧施加电压时，从另一侧读出的电流是存储电荷量的特征。

8. 发明申请

US20060033005A1 Correction of non-uniform sensitivity in an image array 有权
公开(公告)号：US20060033005A1
公开(公告)日：2006-02-16
申请号：US10915454
申请日：2004-08-11
申请人： Dmitri Jerdev , Igor Subbotin , Ilia Ovsiannikov
发明人： Dmitri Jerdev , Igor Subbotin , Ilia Ovsiannikov
IPC分类号： H01L27/00
CPC分类号： H04N5/3572
摘要： An improved non-uniform sensitivity correction algorithm for use in an imager device (e.g., a CMOS APS). The algorithm provides zones having flexible boundaries which can be reconfigured depending upon the type of lens being used in a given application. Each pixel within each zone is multiplied by a correction factor dependent upon the particular zone while the pixel is being read out from the array. The amount of sensitivity adjustment required for a given pixel depends on the type of lens being used, and the same correction unit can be used with multiple lenses where the zone boundaries and the correction factors are adjusted for each lens. In addition, the algorithm makes adjustments to the zone boundaries based upon a misalignment between the centers of the lens being used and the APS array.

9. 发明授权

US08817135B2 Correction of cluster defects in imagers 有权
标题翻译：校正成像器中的簇缺陷
公开(公告)号：US08817135B2
公开(公告)日：2014-08-26
申请号：US13112182
申请日：2011-05-20
申请人： Dmitri Jerdev
发明人： Dmitri Jerdev
IPC分类号： H04N5/217
CPC分类号： H04N5/367 , H04N2209/046
摘要： A method and apparatus that allows for the correction of multiple defective pixels in an imager device. In one exemplary embodiment, the method includes the steps of selecting a correction kernel for a defective pixel, determining average and difference values for pixel pairs in the correction kernel, and substituting an average value from a pixel pair for the value of the defective pixel.
摘要翻译：允许在成像器装置中校正多个缺陷像素的方法和装置。在一个示例性实施例中，该方法包括以下步骤：为缺陷像素选择校正内核，确定校正内核中的像素对的平均值和差值，并将来自像素对的平均值替换为缺陷像素的值。

10. 发明授权

US07737394B2 Ambient infrared detection in solid state sensors 有权
标题翻译：固态传感器环境红外检测
公开(公告)号：US07737394B2
公开(公告)日：2010-06-15
申请号：US11513582
申请日：2006-08-31
申请人： Ilia Ovsiannikov , Xuemei Zhang , Dmitri Jerdev
发明人： Ilia Ovsiannikov , Xuemei Zhang , Dmitri Jerdev
IPC分类号： G03B13/02
CPC分类号： H04N5/33 , G03B13/02 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14649 , H04N5/374
摘要： A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.
摘要翻译：固态成像装置包括在传感器上形成的有源像素阵列和红外截止滤波器。可选地，红外线截止滤光器中的狭槽允许红外照明到达传感器以由视觉不透明滤光片覆盖的像素检测，并被限制电荷泄漏的特殊类型的像素包围，并实现红外照明的高动态范围感测。平均红外信号与平均亮度的比率表示到达成像装置的红外线照射量。

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