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1. 发明授权

US09123181B2 Method and software for creating an image file including multiple still images and special effects 有权
标题翻译：用于创建包括多个静止图像和特殊效果的图像文件的方法和软件
公开(公告)号：US09123181B2
公开(公告)日：2015-09-01
申请号：US12062395
申请日：2008-04-03
申请人： Kyung Ran Lee , Soon Ho Kwon , Joon-kee Chang , HoJin Jang , Dong Ho Park , Soon Sik So
发明人： Kyung Ran Lee , Soon Ho Kwon , Joon-kee Chang , HoJin Jang , Dong Ho Park , Soon Sik So
IPC分类号： G06F3/0481 , G06F3/0482 , G06T13/80 , G11B27/034 , G11B27/34
CPC分类号： G06T13/80 , G11B27/034 , G11B27/34
摘要： Disclosed is a method of creating a pleasure image file comprising a plurality of images. The method comprises providing a plurality of still image files for use in creating a pleasure image file comprising a plurality of still images from the plurality of still image files and receiving an input indicative of a sequence for displaying the plurality of still images when playing the pleasure image file. Incorporating some effects for each still image in creating the image file comprises assigning a period during which each still image is to be displayed on a screen, adding a display special effect to be used while displaying the at least one still image, and creating the pleasure image file configured to display the plurality of still images on a screen in accordance with the sequence each for the assigned period, wherein the at least one still image is to be displayed with the display special effect.
摘要翻译：公开了一种创建包括多个图像的快乐图像文件的方法。该方法包括提供多个静止图像文件，用于创建包括来自多个静止图像文件的多个静止图像的游乐图像文件，并且当播放乐趣时接收指示用于显示多个静止图像的序列的输入图像文件。在创建图像文件时对每个静止图像并入一些效果包括：在屏幕上分配每个静止图像要显示的时段，在显示至少一个静止图像的同时添加要使用的显示特殊效果，以及创建乐趣图像文件，其被配置为根据所分配的周期中的每个序列在屏幕上显示所述多个静止图像，其中所述至少一个静止图像将以显示特殊效果显示。

2. 发明授权

US07085169B2 Flash memory device capable of reducing read time 有权
标题翻译：闪存器件能够减少读取时间
公开(公告)号：US07085169B2
公开(公告)日：2006-08-01
申请号：US10813909
申请日：2004-03-26
申请人： Dong-Ho Park , Myong-Jae Kim
发明人： Dong-Ho Park , Myong-Jae Kim
IPC分类号： G11C11/34
CPC分类号： G11C7/08 , G11C16/26 , G11C2207/005
摘要： A flash memory device is disclosed that includes a control circuit for generating a count-up pulse signal notifying a generation of an address required for a burst read operation. An address generator circuit generates an address in response to the count-up pulse signal, and a discharge circuit discharges global bit lines in response to the count-up pulse signal. According to this control scheme, the global bit lines may be discharged before the local and global bit lines are selected.
摘要翻译：公开了一种闪速存储器件，其包括用于产生通知产生突发读取操作所需的地址的递增脉冲信号的控制电路。地址发生器电路响应于递增脉冲信号产生地址，并且放电电路响应于递增计数脉冲信号而放电全局位线。根据该控制方案，在选择局部和全局位线之前，全局位线可以被放电。

3. 发明申请

US20050190603A1 Multi level flash memory device and program method 失效
标题翻译：多级闪存设备和程序方法
公开(公告)号：US20050190603A1
公开(公告)日：2005-09-01
申请号：US11021181
申请日：2004-12-22
申请人： Seung-Keun Lee , Dong-Ho Park
发明人： Seung-Keun Lee , Dong-Ho Park
IPC分类号： G11C16/00 , G11C11/34 , G11C11/56 , G11C16/10 , G11C16/34
CPC分类号： G11C11/5628 , G11C16/10 , G11C16/3454 , G11C16/3459 , G11C2211/5621
摘要： We describe a multi level flash memory device and program method. The multi level flash memory device includes a plurality of memory cells, each storing an amount of charge indicative of more than two possible states and control circuitry coupled to the memory cells. The control circuitry to applying a programming voltage alternating with a verification voltage to the memory cells until all are at a desired state and applying at least one additional programming voltage to the cells in a highest state without applying a verification voltage. The method includes applying at least one programming pulse to the cells, verifying that each cell has reached the desired state, selecting the cells that are programmed for a highest state, and applying at least one additional programming pulse to the selected cells without further verifying their state.
摘要翻译：我们描述一个多级闪存设备和程序方法。多级闪存器件包括多个存储器单元，每个存储器单元存储指示多于两种可能状态的电荷量以及耦合到存储器单元的控制电路。控制电路，用于将编程电压与验证电压交替地施加到存储器单元，直到全部处于期望状态，并且在不施加验证电压的情况下以最高状态向单元施加至少一个附加编程电压。该方法包括向单元施加至少一个编程脉冲，验证每个单元已经达到期望状态，选择被编程为最高状态的单元，以及向选定单元施加至少一个附加编程脉冲，而不进一步验证它们州。

4. 发明授权

US06466478B1 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US06466478B1
公开(公告)日：2002-10-15
申请号：US09847115
申请日：2001-05-01
申请人： Dong-Ho Park
发明人： Dong-Ho Park
IPC分类号： G11C1604
CPC分类号： G11C16/08 , G11C29/70
摘要： A NOR-type flash memory device includes a global decoder circuit that is coupled to global wordlines. The global decoder circuit drives the global wordlines using wordline voltages that will be applied to local wordlines in each operation mode, and has wordline select switches each corresponding to the global wordlines. A local decoder circuit couples the local wordlines to the global wordlines in response to a sector select signal, and a sector generates a control signal in accordance with address information for selecting a memory cell array. A switch circuit includes a plurality of depletion MOS transistors each being coupled between corresponding first and second wordline. The depletion MOS transistors are commonly controlled by a control signal. Each of the wordline select switches is made of two NMOS transistors.
摘要翻译： NOR型闪存器件包括耦合到全局字线的全局解码器电路。全局解码器电路使用将在每个操作模式下应用于本地字线的字线电压来驱动全局字线，并且具有分别对应于全局字线的字线选择开关。本地解码器电路响应于扇区选择信号将本地字线耦合到全局字线，并且扇区根据用于选择存储单元阵列的地址信息产生控制信号。开关电路包括多个耗尽型MOS晶体管，每个耗尽型MOS晶体管都耦合在对应的第一和第二字线之间。耗尽型MOS晶体管通常由控制信号控制。每个字线选择开关由两个NMOS晶体管组成。

5. 发明授权

US6003406A Steering wheel having a collapsible hub 失效
标题翻译：方向盘有一个可折叠集线器
公开(公告)号：US6003406A
公开(公告)日：1999-12-21
申请号：US982234
申请日：1997-12-01
申请人： Ju-Young Lee , Dong-Ho Park
发明人： Ju-Young Lee , Dong-Ho Park
IPC分类号： B62D1/10 , B60R21/05 , B60R21/203 , B62D1/11 , F16F7/00 , F16F7/12 , B62D1/04
CPC分类号： B62D1/11 , B60R21/05 , F16F7/123 , B60R21/2035 , Y10T74/20834
摘要： A steering wheel having a collapsible hub, the steering wheel comprising a wheel 100 having a rim 140, a plurality of spokes 130 connected with the rim 140 and a lower plate 150 having edges and connected with the spokes 130 at the middle of the wheel 100, the edges of the lower plate forming a shape of an open box; a back plate 200 fixed to the said plurality of spokes 130 of the wheel 100 and having an escape hole 220 opened from the middle to one side of the plate 200; an upper plate 300 having first and second vertical surfaces 320 and 330 fixed to the back plate 200 and a horizontal surface 340 connecting the vertical surfaces 320 and 330 to form a space between the back plate 200 and the upper plate 300; and a hub cover 400 installed on the wheel 100 for covering the upper plate 300, so the upper plate 300 collapses to absorb impact of a driver in a car accident.
摘要翻译：具有可折叠轮毂的方向盘，所述方向盘包括具有轮辋140的轮100，与轮辋140连接的多个辐条130和具有边缘并与轮100中间的轮辐130连接的下板150 ，所述下板的边缘形成打开的盒子的形状; 固定到车轮100的所述多个轮辐130的背板200，并且具有从板200的中间向一侧开口的排出孔220; 具有固定到背板200的第一和第二垂直表面320和330的上板300和连接垂直表面320和330以在后板200和上板300之间形成空间的水平表面340; 以及安装在车轮100上以覆盖上板300的轮毂盖400，因此上板300塌陷以吸收驾驶员在车祸中的冲击。

6. 发明授权

US09352970B2 Method for producing silicon for solar cells by metallurgical refining process 有权
标题翻译：冶金精制工艺生产太阳能电池用硅的方法
公开(公告)号：US09352970B2
公开(公告)日：2016-05-31
申请号：US14380239
申请日：2012-06-28
申请人： Byung Moon Moon , Tae U Yu , Dong Ho Park , Hyun Jin Koo , Gang June Kim , Eun Su Jang , Sang Wook Lee
发明人： Byung Moon Moon , Tae U Yu , Dong Ho Park , Hyun Jin Koo , Gang June Kim , Eun Su Jang , Sang Wook Lee
IPC分类号： C01B33/039 , C01B33/037 , C07C29/74 , C01B33/025
CPC分类号： C01B33/039 , C01B33/025 , C01B33/037 , C07C29/74 , C07C31/18
摘要： In order to produce metallurgical grade silicon and solar cell grade polysilicon in batches, a method of the present invention comprises: a step of reduction in an arc furnace, consisting of removing C and CO in a silicon reduction atmosphere using silica stone and carbon black by an arc so as to produce metallurgical grade silicon; a step of refining by slag consisting of removing phosphorus (P) and boron (B) by slag; a step of refining by unidirectional solidification consisting of removing metal impurities (Fe, Al, Ti, Mn, etc.) by means of unidirectional solidification; and a step of steam plasma-electromagnetism continuous refining consisting of charging a furnace with the unidirectionally solidified silicon and removing boron (B) by a steam plasma torch.
摘要翻译：为了分批生产冶金级硅和太阳能电池级多晶硅，本发明的方法包括：还原电弧炉的步骤包括使用硅石和炭黑通过硅还原气氛中的C和CO除去电弧，以生产冶金级硅; 通过炉渣除去磷（P）和硼（B）组成的炉渣精炼的步骤; 通过单向凝固除去金属杂质（Fe，Al，Ti，Mn等）的单向凝固精制步骤; 以及蒸汽等离子体 - 电磁连续精炼的步骤，其包括将炉子与单向固化的硅进行加热，并通过蒸汽等离子体焰炬除去硼（B）。

7. 发明申请

US20150135770A1 METHOD FOR PRODUCING SILICON FOR SOLAR CELLS BY METALLURGICAL REFINING PROCESS 有权
标题翻译：通过冶金精炼工艺生产太阳能电池硅的方法
公开(公告)号：US20150135770A1
公开(公告)日：2015-05-21
申请号：US14380239
申请日：2012-06-28
申请人： Byung Moon Moon , Tae U Yu , Dong Ho Park , Hyun Jin Koo , Gang June Kim , Eun Su Jang , Sang Wook Lee
发明人： Byung Moon Moon , Tae U Yu , Dong Ho Park , Hyun Jin Koo , Gang June Kim , Eun Su Jang , Sang Wook Lee
IPC分类号： C01B33/039
CPC分类号： C01B33/039 , C01B33/025 , C01B33/037 , C07C29/74 , C07C31/18
摘要： In order to produce metallurgical grade silicon and solar cell grade polysilicon in batches, a method of the present invention comprises: a step of reduction in an arc furnace, consisting of removing C and CO in a silicon reduction atmosphere using silica stone and carbon black by an arc so as to produce metallurgical grade silicon; a step of refining by slag consisting of removing phosphorus (P) and boron (B) by slag; a step of refining by unidirectional solidification consisting of removing metal impurities (Fe, Al, Ti, Mn, etc.) by means of unidirectional solidification; and a step of steam plasma-electromagnetism continuous refining consisting of charging a furnace with the unidirectionally solidified silicon and removing boron (B) by a steam plasma torch.
摘要翻译：为了分批生产冶金级硅和太阳能电池级多晶硅，本发明的方法包括：还原电弧炉的步骤包括使用硅石和炭黑通过硅还原气氛中的C和CO除去电弧，以生产冶金级硅; 通过炉渣除去磷（P）和硼（B）组成的炉渣精炼的步骤; 通过单向凝固除去金属杂质（Fe，Al，Ti，Mn等）的单向凝固精制步骤; 以及蒸汽等离子体 - 电磁连续精炼的步骤，其包括将炉子与单向固化的硅进行加热，并通过蒸汽等离子体焰炬除去硼（B）。

8. 发明授权

US08973647B2 Heat exchanger and air conditioner having the same 有权
标题翻译：热交换器和空调具有相同的功能
公开(公告)号：US08973647B2
公开(公告)日：2015-03-10
申请号：US12926111
申请日：2010-10-26
申请人： Kang Tae Seo , Hayase Gaku , Young Min Kim , Dong Ho Park
发明人： Kang Tae Seo , Hayase Gaku , Young Min Kim , Dong Ho Park
IPC分类号： F28D1/04 , F24F13/30 , F28D1/047 , F28F1/32 , F28F17/00 , F28F1/20
CPC分类号： F24F13/30 , F24F1/0059 , F28D1/0477 , F28F1/325 , F28F17/005
摘要： A heat exchange fin in a heat exchanger is disposed between two refrigerant pipes spaced apart from each other includes a guide protrusion including first inclined planes inclined upward along opposite sides of a center line of a refrigerant pipe row in a symmetric fashion and second inclined planes inclined downward from upper ends of the first inclined planes, and the first inclined planes and the second inclined planes are provided with louver members, thereby improving heat exchange efficiency.
摘要翻译：热交换器中的热交换器翅片设置在彼此间隔开的两个制冷剂管之间，包括引导突起，该引导突起包括以对称方式沿制冷剂管排的中心线的相对侧向上倾斜的第一倾斜平面和倾斜的第二倾斜平面从第一倾斜面的上端向下方倾斜，第一倾斜面和第二倾斜面设置有百叶窗构件，从而提高热交换效率。

9. 发明申请

US20110120681A1 Heat exchanger and air conditioner having the same 有权
标题翻译：热交换器和空调具有相同的功能
公开(公告)号：US20110120681A1
公开(公告)日：2011-05-26
申请号：US12926111
申请日：2010-10-26
申请人： Kang Tae Seo , Hayase Gaku , Young Min Kim , Dong Ho Park
发明人： Kang Tae Seo , Hayase Gaku , Young Min Kim , Dong Ho Park
IPC分类号： F28D1/04
CPC分类号： F24F13/30 , F24F1/0059 , F28D1/0477 , F28F1/325 , F28F17/005
摘要： A heat exchange fin in a heat exchanger is disposed between two refrigerant pipes spaced apart from each other includes a guide protrusion including first inclined planes inclined upward along opposite sides of a center line of a refrigerant pipe row in a symmetric fashion and second inclined planes inclined downward from upper ends of the first inclined planes, and the first inclined planes and the second inclined planes are provided with rubber members, thereby improving heat exchange efficiency.
摘要翻译：热交换器中的热交换器翅片设置在彼此间隔开的两个制冷剂管之间，包括引导突起，该引导突起包括以对称方式沿制冷剂管排的中心线的相对侧向上倾斜的第一倾斜平面和倾斜的第二倾斜平面从第一倾斜面的上端向下方倾斜，第一倾斜面和第二倾斜面设有橡胶部件，从而提高热交换效率。

10. 发明申请

US20100163938A1 METHOD FOR FORMING SILICIDE IN SEMICONDUCTOR DEVICE 审中-公开
标题翻译：在半导体器件中形成硅化物的方法
公开(公告)号：US20100163938A1
公开(公告)日：2010-07-01
申请号：US12648210
申请日：2009-12-28
申请人： Dong-Ho Park
发明人： Dong-Ho Park
IPC分类号： H01L29/45 , H01L21/762 , H01L21/3205 , H01L29/78
CPC分类号： H01L21/28518 , H01L21/28052 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A method of forming a silicide in a semiconductor device includes: forming a poly gate on and/or over the upper portion of a silicon substrate having an active area and an STI formed therein; forming a spacer wall on and/or over both sidewalls of the poly gate; forming source/drain by performing high-concentration ion implantation; forming a silicide blocking pattern on and/or over both sidewalls of the spacer wall and on the STI; forming a multilayer silicide material on and/or over substantially the entire surface of the silicon substrate having the silicide blocking pattern formed thereover; and performing an RTA process on the multilayer silicide material to form a silicide by reaction between the poly gate and the source/drain electrode.
摘要翻译：在半导体器件中形成硅化物的方法包括：在其中形成有活性区域和STI的硅衬底的上部和/或上方形成多晶硅栅极; 在所述多晶硅栅极的两个侧壁上和/或上方形成间隔壁; 通过进行高浓度离子注入形成源极/漏极; 在间隔壁和STI的两个侧壁上和/或上方形成硅化物阻挡图案; 在其上形成有硅化物阻挡图案的硅衬底的基本整个表面上和/或上方形成多层硅化物材料; 以及通过所述多晶硅栅极和所述源极/漏极之间的反应在所述多层硅化物材料上进行RTA工艺以形成硅化物。

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