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1. 发明申请

US20230114703A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
公开(公告)号：US20230114703A1
公开(公告)日：2023-04-13
申请号：US18045831
申请日：2022-10-12
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Jumpei YAMAMOTO , Tetsuya IKUTA
IPC分类号： H01L33/30 , H01L33/00 , H01L33/22 , H01L33/46 , H01L33/56
摘要： A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of −1 or more, and a protective film is provided on the light extraction face.

2. 发明申请

US20230051009A1 LITHIUM-CONTAINING OXIDE PRECURSOR SOLUTION FOR COATING ELECTRODE ACTIVE MATERIAL, AND METHOD FOR PRODUCING THE SAME 有权
公开(公告)号：US20230051009A1
公开(公告)日：2023-02-16
申请号：US17878460
申请日：2022-08-01
申请人： DOWA ELECTRONICS MATERIALS CO., LTD. , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Masahiro YOSHIDA , Hidefumi FUJITA , Koji TANOUE , Kazuki MURAISHI , Masaru KUBOTA , Yuki ISHIGAKI
IPC分类号： H01M4/62 , H01M4/36 , H01M4/505 , H01M4/525
摘要： Provided is a lithium-containing oxide precursor solution for coating an electrode active material that is capable of improving the coverage of a coating layer that is formed by applying the lithium-containing oxide precursor solution to the surface of powder of the electrode active material and king it, and that is easy to handle in a normal atmosphere because a solution composed mainly of water is used as a solvent. The lithium-containing oxide precursor solution for coating an electrode active material includes Li in an amount of 0.1 mass % or more and 5.0 mass % or less, at least one element selected from Nb, F, Fe, P, Ta, V, Ge, B, Al, Ti, Si, W, Zr, Mo, S, Cl, Br, and I in an amount of 0.05 mass % or more and 35 mass % or less, and water in an amount of 60 mass % or more and 98.4 mass % or less. The value of absorbance of the solution at a wavelength of 660 nm is 0.1 or less, and the value of surface energy thereof is 72 mN/m or less.

3. 发明申请

US20230045543A1 COATED ACTIVE MATERIAL AND METHOD FOR PRODUCING THE SAME 有权
公开(公告)号：US20230045543A1
公开(公告)日：2023-02-09
申请号：US17872293
申请日：2022-07-25
申请人： DOWA ELECTRONICS MATERIALS CO., LTD. , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Kazuki MURAISHI , Masaru KUBOTA , Yuki ISHIGAKI , Masahiro YOSHIDA , Hidefumi FUJITA , Koji TANOUE
IPC分类号： C01G33/00 , H01M10/0525 , C01B25/30
摘要： Provided are a coated active material having excellent properties that can reduce the reaction resistance of a battery, and a method for producing a coated active material that can achieve both a high processing speed and high processing quality. The method for producing a coated active material includes: mixing an electrode active material and a coating solution containing Li and an element M and having a surface energy of 72 mN/m or less to prepare a slurry; and drying the slurry in an air flow and thereby causing a Li-containing oxide to adhere to at least a portion of the surface of the electrode active material, to obtain a coated active material, where the element M is at least one element selected from Nb, F, Fe, P, Ta, V, Ge, B, Al, Ti, Si, W, Zr, Mo, S, Cl, Br, and I.

4. 发明授权

US11556070B2 Carrier core material and electrophotographic development carrier using same and electrophotographic developer 有权
公开(公告)号：US11556070B2
公开(公告)日：2023-01-17
申请号：US16492488
申请日：2018-03-15
申请人： DOWA ELECTRONICS MATERIALS CO., LTD. , DOWA IP CREATION CO., LTD.
发明人： Takeshi Kawauchi , Yohei Ishikawa , Hiroyuki Miyano
IPC分类号： G03G9/107 , G03G9/113 , G03G15/08
摘要： According to the present invention, there is provided a carrier core material that is formed of ferrite particles in which 48 to 52 mass % of Fe, 16 to 22 mass % of Mn, 1.0 to 3.5 mass % of Mg and 0.05 to 0.5 mass % of Ca are included, and when an electrical resistance value with an applied voltage of 500 V in an environment (in an L/L environment) in which the temperature is 10° C. and the relative humidity is 35% is RL (Ω·cm), and an electrical resistance value with an applied voltage of 500 V in an environment (in an H/H environment) in which the temperature is 30° C. and the relative humidity is 70% is RH (Ω·cm), formula (1) below is satisfied. 0.1≤(log RL−log RH)≤0.3 (1)

5. 发明申请

US20220367749A1 SEMICONDUCTOR OPTICAL DEVICE AND METHOD OF PRODUCING THE SAME 有权
公开(公告)号：US20220367749A1
公开(公告)日：2022-11-17
申请号：US17596587
申请日：2020-06-16
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Yoshitaka KADOWAKI , Osamu TANAKA
IPC分类号： H01L33/00 , H01L33/06 , H01L33/30
摘要： Provided is a method of producing a semiconductor optical device that makes it possible to improve the optical device properties of the semiconductor optical device including semiconductor layers containing at least In, As, and Sb. The method has a first step of forming an etching stop layer on an InAs growth substrate; a second step of forming a semiconductor laminate; a third step of forming a distribution portion; a fourth step of bonding the semiconductor laminate and the distribution portion to a support substrate with a metal bonding layer therebetween; and a fifth step of removing the InAs growth substrate.

6. 发明授权

US11441010B2 Fine silver particle dispersion 有权
公开(公告)号：US11441010B2
公开(公告)日：2022-09-13
申请号：US15724378
申请日：2017-10-04
申请人： DOWA ELECTRONICS MATERIALS CO., LTD.
发明人： Shingo Teragawa , Takashi Hinotsu , Dave Hui , Michael Stephen Wolfe , Howard David Glicksman , Haixin Yang
IPC分类号： C08K3/28 , C09D101/28 , B22F9/24 , B22F1/0545 , C08K9/04 , C08K3/08
摘要： This disclosure relates to a fine silver particle dispersion comprising: (i) 60 to 95 wt. % of fine silver particles, wherein particle diameter (D50) of the fine silver particles is 50 to 300 nm, (ii) 4.5 to 39 wt. % of a solvent; and (iii) 0.1 to 3 wt. % of a resin, wherein the glass transition temperature (Tg) of the resin is 70 to 300° C., wherein the weight percentages are based on the weight of the fine silver particle dispersion.

7. 发明申请

US20220258230A1 SILVER POWDER AND METHOD FOR PRODUCING SAME 有权
公开(公告)号：US20220258230A1
公开(公告)日：2022-08-18
申请号：US17622275
申请日：2020-06-20
申请人： DOWA ELECTRONICS MATERIALS CO., LTD.
发明人： Masanori Fujii
IPC分类号： B22F1/052 , H01B1/22
摘要： There are provided a silver powder, which is able to form an electrically conductive film having a low resistance value even if the period of time for firing an electrically conductive paste is shorter than that for firing conventional electrically conductive pastes when the silver powder is used as the material of the electrically conductive paste, and a method for producing the same. A large-diameter silver powder, which has a crystalline size of 50 nm or less and which has a particle diameter (D50) of 1 μm or more and 4 μm or less, the particle diameter (D50) of the large-diameter silver powder being a particle diameter corresponding to 50% of accumulation in a particle size distribution of the large-diameter silver powder, is mixed with a small-diameter silver powder, which has a crystalline size of 50 nm or less and which has a particle diameter (D50) of 0.3 μm or more and less than 1 μm, the particle diameter (D50) of the small-diameter silver powder being a particle diameter corresponding to 50% of accumulation in a particle size distribution of the small-diameter silver powder, to produce a silver powder, which has a crystalline size of 50 nm or less and which has a pressed density of 6.3 g/cm3 or more.

8. 发明授权

US11407030B2 Silver powder and method for producing same 有权
公开(公告)号：US11407030B2
公开(公告)日：2022-08-09
申请号：US17086552
申请日：2020-11-02
申请人： DOWA ELECTRONICS MATERIALS CO., LTD.
发明人： Atsushi Ebara , Kenichi Inoue , Yoshiyuki Michiaki , Takahiro Yamada , Masahiro Yoshida
IPC分类号： H01B1/02 , C09D5/24 , B22F9/08 , C22C5/06 , H01B1/22 , B22F1/00 , B22F1/05 , C09D7/40 , C08K3/08
摘要： There is provided a silver powder which has a small average particle diameter and a small thermal shrinkage percentage, and a method for producing the same. While a molten metal of silver heated to a temperature (1292 to 1692° C.), which is higher than the melting point (962° C.) of silver by 330 to 730° C., is allowed to drop, a high-pressure water is sprayed onto the molten metal of silver (preferably at a water pressure of 90 to 160 MPa) to rapidly cool and solidify the molten metal of silver to powderize silver to produce a silver powder which has an average particle diameter of 1 to 6 μm and a shrinkage percentage of not greater than 8% (preferably not greater than 7%) at 500° C., the product of the average particle diameter by the shrinkage percentage at 500° C. being 1 to 11 μm·% (preferably 1.5 to 10.5 μm·%).

9. 发明申请

US20220231287A1 SOLUTION AND METHOD FOR PRODUCING THE SAME, AND A METHOD FOR PRODUCING ACTIVE MATERIAL FOR SECONDARY BATTERY 有权
公开(公告)号：US20220231287A1
公开(公告)日：2022-07-21
申请号：US17712786
申请日：2022-04-04
申请人： DOWA ELECTRONICS MATERIALS CO., LTD.
发明人： Yoshiaki AIKI , Toshihiko UEYAMA , Koji TANOUE
IPC分类号： H01M4/36 , C01G33/00 , C01G23/00 , H01M4/525 , H01M4/62 , H01M4/505 , C01G51/00 , H01M4/131 , H01M4/1391 , H01M4/485 , H01M10/0525
摘要： A producing method of a solution that contains lithium, at least one of a niobium complex and a titanium complex, and ammonia, wherein an amount of the ammonia in the solution is 0.3 mass % or less. The solution is suitable for forming a coating layer capable of improving battery characteristics of an active material in a battery.

10. 发明申请

US20220190199A1 POINT SOURCE TYPE LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20220190199A1
公开(公告)日：2022-06-16
申请号：US17593769
申请日：2020-03-23
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Masatoshi IWATA , Shinya SHOJI
IPC分类号： H01L33/14 , H01L33/00 , H01L33/30 , H01L33/40
摘要： The present disclosure provides a point source type light-emitting diode and a manufacturing method thereof, which simplify a manufacturing process and have superior temperature-dependent characteristic. A point source type light-emitting diode includes a support substrate, a metal layer having a light reflecting surface, a current narrowing layer, a III-V compound semiconductor laminate sequentially having a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and a top electrode. The top electrode has an opening for ejecting light emitted by the active layer. The current narrowing layer includes a dielectric layer having a through hole and an intermediate electrode. In a projection plane in which the current narrowing layer including the intermediate electrode is projected vertically onto the top electrode, the opening encloses the intermediate electrode, and the dielectric layer encloses the top electrode. The thickness of the p-type semiconductor layer is between 0.5 μm and 3.0 μm inclusive.

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