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1. 发明申请

US20160181093A1 III-N EPITAXY ON MULTILAYER BUFFER WITH PROTECTIVE TOP LAYER 审中-公开
标题翻译：具有保护顶层的多层缓冲层的III-N外延
公开(公告)号：US20160181093A1
公开(公告)日：2016-06-23
申请号：US14576500
申请日：2014-12-19
申请人： Rytis Dargis , Andrew Clark , Erdem Arkun , Nam Pham
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun , Nam Pham
IPC分类号： H01L21/02
CPC分类号： H01L21/02488 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02483 , H01L21/02505 , H01L21/02516 , H01L21/0254
摘要： A method of growing III-N material on a silicon substrate including the steps of epitaxially growing a buffer layer of REO material on a silicon substrate, epitaxially growing a layer of REN material on the surface of the buffer, and epitaxially growing a thin protective layer of REO on the surface of the REN material layer. The substrate and structure can then be conveniently transferred to another growth machine in which are performed the steps of transforming or modifying in-situ the REO protective layer to a REN layer with a nitrogen treatment and epitaxially growing a layer of III-N material on the modified protective layer.
摘要翻译：一种在硅衬底上生长III-N材料的方法，包括以下步骤：在硅衬底上外延生长REO材料的缓冲层，在衬底的表面上外延生长REN材料层，并外延生长薄的保护层的REO在REN材料层的表面上。底物和结构可以方便地转移到另一种生长机器中，其中进行以下步骤：将REO保护层原位转化或修饰为具有氮处理的REN层，并在其上外延生长III-N材料层改性保护层。

2. 发明授权

US08835955B2 IIIOxNy on single crystal SOI substrate and III n growth platform 有权
标题翻译： IIIOxNy在单晶SOI衬底和IIIn生长平台上
公开(公告)号：US08835955B2
公开(公告)日：2014-09-16
申请号：US13221474
申请日：2011-08-30
申请人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
发明人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
IPC分类号： H01L33/60 , H01L29/786 , H01L33/00 , H01L29/78 , H01L21/762 , H01L21/02 , H01L33/12 , H01L33/46
CPC分类号： H01L21/76248 , H01L21/02381 , H01L21/02483 , H01L21/02488 , H01L21/02507 , H01L21/02532 , H01L29/7842 , H01L29/78603 , H01L33/007 , H01L33/12 , H01L33/46
摘要： A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIOxNy formed on the engineered single crystal silicon layer. In some embodiments the III material in the insulator layer includes more than on III material. In a preferred embodiment the single crystal rare earth oxide includes Gd2O3 and the single crystal insulator layer of IIIOxNy includes one of AlOxNy and AlGaOxNy.
摘要翻译：一种绝缘体上硅（SOI）衬底结构及其制造方法，包括单晶硅衬底，在衬底上形成的单晶稀土氧化物层，在单晶稀土层上形成的工程化单晶硅层在工程化的单晶硅层上形成IIIOxNy的单晶绝缘体层。在一些实施例中，绝缘体层中的III材料包括多于III族材料。在优选的实施方案中，单晶稀土氧化物包括Gd 2 O 3，并且IIIO x N y的单晶绝缘体层包括AlO x N y和AlGaO x N y之一。

3. 发明申请

US20140231818A1 AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE 有权
标题翻译： GaN / REO /硅衬底结构上的AlN电极
公开(公告)号：US20140231818A1
公开(公告)日：2014-08-21
申请号：US13772169
申请日：2013-02-20
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L21/02 , H01L29/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L29/155 , H01L29/2003 , H01L29/778
摘要： III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer. A cap layer of AlN is grown on the final III-N layer and a III-N layer of material with one of an LED structure and an HEMT structure is grown on the AlN cap layer.
摘要翻译：在硅衬底上生长的III-N材料包括位于硅衬底上的单晶稀土氧化物层。稀土氧化物与硅衬底的表面基本上晶格匹配。第一层III-N材料位于稀土氧化物层的表面上。氮化铝（AlN）的层间位于III-N材料的第一层的表面上，并且在氮化铝层间的表面上设置附加的III-N层。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。在最终的III-N层上生长AlN的覆盖层，并且在AlN覆盖层上生长具有LED结构和HEMT结构之一的III-N层材料。

4. 发明申请

US20140231817A1 III-N MATERIAL GROWN ON ALO/ALN BUFFER ON SI SUBSTRATE 有权
标题翻译： III-N材料在基板上的ALO / ALN缓冲器上
公开(公告)号：US20140231817A1
公开(公告)日：2014-08-21
申请号：US13772126
申请日：2013-02-20
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L29/205 , H01L21/02
CPC分类号： H01L29/205 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L29/778
摘要： III-N material grown on a silicon substrate includes a single crystal buffer positioned on a silicon substrate. The buffer is substantially crystal lattice matched to the surface of the silicon substrate and includes aluminum oxynitride adjacent the substrate and aluminum nitride adjacent the upper surface. A first layer of III-N material is positioned on the upper surface of the buffer. An inter-layer of aluminum nitride (AlN) is positioned on the first III-N layer and an additional layer of III-N material is positioned on the inter-layer. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
摘要翻译：在硅衬底上生长的III-N材料包括位于硅衬底上的单晶缓冲器。缓冲器基本上与硅衬底的表面晶格匹配，并且包括邻近衬底的氮氧化铝和与上表面相邻的氮化铝。第一层III-N材料位于缓冲器的上表面上。氮化铝（AlN）的层间位于第一III-N层上，并且在层之间设置附加的III-N材料层。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。

5. 发明授权

US08680507B1 A1N inter-layers in III-N material grown on DBR/silicon substrate 失效
标题翻译：在DBR /硅衬底上生长的III-N材料中的AlN层间
公开(公告)号：US08680507B1
公开(公告)日：2014-03-25
申请号：US13742612
申请日：2013-01-16
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L33/10 , H01L33/12 , H01L29/778
CPC分类号： H01L33/007 , H01L29/155 , H01L29/2003 , H01L29/7787 , H01L33/10 , H01L33/12 , H01L33/32
摘要： A DBR/gallium nitride/aluminum nitride base grown on a silicon substrate includes a Distributed Bragg Reflector (DBR) positioned on the silicon substrate. The DBR is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the DBR, an inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
摘要翻译：在硅衬底上生长的DBR /氮化镓/氮化铝基底包括位于硅衬底上的分布式布拉格反射器（DBR）。 DBR基本上与硅衬底的表面晶格匹配。第一层III-N材料位于DBR的表面上，氮化铝层（AlN）的层间位于III-N材料的第一层的表面上，并且附加的III-N材料层位于氮化铝层间的表面上。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。

6. 发明授权

US08664735B2 IR sensor using REO up-conversion 有权
标题翻译： IR传感器采用REO上转换
公开(公告)号：US08664735B2
公开(公告)日：2014-03-04
申请号：US13053285
申请日：2011-03-22
申请人： Erdem Arkun , Rytis Dargis , Andrew Clark , David L. Williams
发明人： Erdem Arkun , Rytis Dargis , Andrew Clark , David L. Williams
IPC分类号： H01L31/0232 , H01L31/055
CPC分类号： H01L31/02322 , G01J1/58 , G01J5/20 , H01L31/02327 , H01L31/103 , Y02E10/52
摘要： A pumped sensor system includes a substrate with a first layer formed thereon and doped for a first type conduction and a second layer doped for a second type conduction, whereby the first and second layers form a silicon light detector at an up-conversion wavelength. A ternary rare earth oxide is formed on the second layer and crystal lattice matched to the second layer. The oxide is a crystalline bulk oxide with a controlled percentage of an up-conversion component and a majority component. The majority component is insensitive to any of pump, sense, or up-conversion wavelengths and the up-conversion component is selected to produce energy at the up-conversion wavelength in response to receiving energy at the pump and sense wavelengths. The layer of oxide defines a light input area sensitive to a pump wavelength and a light input area sensitive to a sense wavelength.
摘要翻译：泵送传感器系统包括其上形成有第一层并且被掺杂用于第一类型传导的第一层和掺杂用于第二类型传导的第二层的衬底，由此第一和第二层以上转换波长形成硅光检测器。在第二层上形成三元稀土氧化物，并且与第二层匹配的晶格。氧化物是具有受控百分比的上转换组分和多数组分的结晶体氧化物。大多数组件对泵，感测或上转换波长中的任何一个不敏感，并且上转换组件被选择为响应于在泵处的接收能量和感测波长而在上转换波长处产生能量。氧化物层限定对泵浦波长敏感的光输入区域和对感测波长敏感的光输入区域。

7. 发明申请

US20130248853A1 NUCLEATION OF III-N ON REO TEMPLATES 有权
标题翻译： III-N在REO模板上的核化
公开(公告)号：US20130248853A1
公开(公告)日：2013-09-26
申请号：US13845426
申请日：2013-03-18
申请人： Erdem Arkun , Andrew Clark , Rytis Dargis , Radek Roucka , Michael Lebby
发明人： Erdem Arkun , Andrew Clark , Rytis Dargis , Radek Roucka , Michael Lebby
IPC分类号： H01L29/20
CPC分类号： H01L21/02192 , H01L21/02247 , H01L21/02252 , H01L21/02381 , H01L21/02439 , H01L21/02458 , H01L21/02483 , H01L21/02488 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L29/2003
摘要： A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.
摘要翻译：在硅衬底上制造单晶III-N材料层的方法包括在硅衬底上外延生长REO模板。该模板包括与衬底相邻的REO层，晶体间距基本上与衬底的晶格间距相匹配，并被选择以保护衬底免受氮化。在模板的上表面附近形成稀土氮氧化物或稀土氮化物，并且在其上外延生长单晶III-N材料层。

8. 发明申请

US20120280276A1 Single Crystal Ge On Si 审中-公开
标题翻译：单晶晶硅
公开(公告)号：US20120280276A1
公开(公告)日：2012-11-08
申请号：US13425079
申请日：2012-03-20
申请人： Rytis Dargis , Erdem Arkun , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Erdem Arkun , Andrew Clark , Michael Lebby
IPC分类号： H01L21/20 , H01L29/165
CPC分类号： H01L21/02488 , H01L21/02381 , H01L21/02483 , H01L21/02502 , H01L21/02532
摘要： A single crystal germanium-on-silicon structure includes a single crystal silicon substrate. A single crystal layer of gadolinium oxide is epitaxially grown on the substrate. The gadolinium oxide has a cubic crystal structure and a lattice spacing approximately equal to the lattice spacing or a multiple of the single crystal silicon. A single crystal layer of lanthanum oxide is epitaxially grown on the gadolinium oxide with a thickness of approximately 12 nm or less. The lanthanum oxide has a lattice spacing approximately equal to the lattice spacing or a multiple of single crystal germanium and a cubic crystal structure approximately similar to the cubic crystal structure of the gadolinium oxide. A single crystal layer of germanium with a (111) crystal orientation is epitaxially grown on the layer of lanthanum oxide.
摘要翻译：单晶硅硅结构包括单晶硅衬底。在衬底上外延生长氧化钆单晶层。氧化钆具有立方晶体结构和大约等于晶格间距或单晶硅倍数的晶格间距。在氧化钆上外延生长氧化镧单晶层，厚度约为12nm以下。氧化镧具有大约等于晶格间距的晶格间距或单晶锗的倍数和与氧化钆近似相似的立方晶体结构。具有（111）晶体取向的锗的单晶层外延生长在氧化镧层上。

9. 发明申请

US20120256232A1 Multilayer Rare Earth Device 审中-公开
标题翻译：多层稀土装置
公开(公告)号：US20120256232A1
公开(公告)日：2012-10-11
申请号：US13251086
申请日：2011-09-30
申请人： Andrew Clark , F. Erdem Arkun , Michael Lebby
发明人： Andrew Clark , F. Erdem Arkun , Michael Lebby
IPC分类号： H01L29/12
CPC分类号： H01L31/1804 , H01L21/02381 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02507 , H01L21/02532 , H01L31/0725 , H01L31/0745 , Y02E10/547 , Y02P70/521
摘要： Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
摘要翻译：给出了利用稀土氧化物层执行应变工程在不同组成和/或晶格取向和尺寸的半导体层之间转换中的任务的装置结构的实例。公开了一种结构，其包括由过渡层分离的多个半导体层，所述过渡层包括可操作为用于结构缺陷的汇的两种或更多种稀土化合物。

10. 发明授权

US09460917B2 Method of growing III-N semiconductor layer on Si substrate 有权
标题翻译：在Si衬底上生长III-N半导体层的方法
公开(公告)号：US09460917B2
公开(公告)日：2016-10-04
申请号：US14179040
申请日：2014-02-12
申请人： Rytis Dargis , Andrew Clark , Nam Pham , Erdem Arkun
发明人： Rytis Dargis , Andrew Clark , Nam Pham , Erdem Arkun
IPC分类号： H01L21/20 , H01L21/36 , H01L21/02
CPC分类号： H01L29/7848 , H01L21/02381 , H01L21/02433 , H01L21/02483 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L21/02658 , H01L29/045 , H01L29/2003
摘要： A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.
摘要翻译：一种在硅衬底上生长III-N半导体材料的方法，包括在单晶硅衬底上生长一层外延稀土氧化物并用氮等离子体改性外延稀土氧化物表面的步骤。该方法还包括以下步骤：在外延稀土氧化物层的改性表面上生长一层低温外延氮化镓，并在低温外延氮化镓层上生长一层体外延III-N半导体材料。

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