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1. 发明授权

US08283667B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08283667B2
公开(公告)日：2012-10-09
申请号：US12547119
申请日：2009-08-25
申请人： Erika Takahashi , Takayuki Kato , Hidekazu Miyairi , Yasuhiro Jinbo
发明人： Erika Takahashi , Takayuki Kato , Hidekazu Miyairi , Yasuhiro Jinbo
IPC分类号： H01L29/72
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78618
摘要： A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous semiconductor, and source and drain regions over and in contact with the pair of crystal regions. The source and drain regions include a microcrystalline semiconductor layer to which an impurity imparting one conductivity type is added.
摘要翻译：提供一种薄膜晶体管，其包括在衬底上的栅极电极层，栅极电极层上的栅极绝缘层，在栅极绝缘层上包括非晶半导体的层，包括非晶形的层上的一对晶体区域半导体以及与该对晶体区域接触的源极和漏极区域。源区和漏区包括添加有赋予一种导电类型的杂质的微晶半导体层。

2. 发明授权

US08083956B2 Display device and method for manufacturing display device 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08083956B2
公开(公告)日：2011-12-27
申请号：US12246947
申请日：2008-10-07
申请人： Gen Fujii , Erika Takahashi , Erumu Kikuchi , Sachiko Kawakami
发明人： Gen Fujii , Erika Takahashi , Erumu Kikuchi , Sachiko Kawakami
IPC分类号： H01L21/302
CPC分类号： H01L51/0004 , H01L27/3246 , H01L27/3283
摘要： To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed.
摘要翻译：提供具有更高图像质量和可靠性的显示设备或具有低成本且高生产率的大屏幕的大尺寸显示设备。在显示装置中使用的功能层（例如着色层或像素电极层）通过将液体功能层形成材料排出到形成有包含第一有机化合物的层的开口而形成，该第一有机化合物具有C-N 键或作为碱的主链中的C-O键和包含第二有机化合物作为隔板的层。控制附着在包含有机化合物的层的表面上对液体功能层形成材料具有疏液性的氟密度，从而可以选择性地形成疏液区域和亲液性区域。

3. 发明申请

US20110303911A1 METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE 审中-公开
标题翻译：形成图案的方法，制造发光装置的方法和发光装置
公开(公告)号：US20110303911A1
公开(公告)日：2011-12-15
申请号：US13213255
申请日：2011-08-19
申请人： Gen FUJII , Erika TAKAHASHI
发明人： Gen FUJII , Erika TAKAHASHI
IPC分类号： H01L27/32 , H01L51/52
CPC分类号： H01L51/0005 , H01L21/76825 , H01L21/76826 , H01L27/3246 , H01L27/3283 , H01L51/0545 , H01L51/56 , Y02P80/30
摘要： Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.
摘要翻译：对设置有光催化性导电膜和绝缘膜的基板的表面进行氧化处理; 进行硅烷偶联剂的处理，形成硅烷偶联剂膜，将基材的表面改性为疏液性; 并且用能量大于或等于用于形成光催化性导电膜的材料的带隙的能量（小于等于390nm）的光照射衬底的表面，使得只有硅烷偶联光催化性导电膜的表面上的试剂膜分解，光催化性导电膜的表面可以改性为亲液性的。

4. 发明授权

US08017422B2 Method for forming pattern, method for manufacturing light emitting device, and light emitting device 有权
标题翻译：形成图案的方法，制造发光器件的方法和发光器件
公开(公告)号：US08017422B2
公开(公告)日：2011-09-13
申请号：US12135252
申请日：2008-06-09
申请人： Gen Fujii , Erika Takahashi
发明人： Gen Fujii , Erika Takahashi
IPC分类号： H01L33/00
CPC分类号： H01L51/0005 , H01L21/76825 , H01L21/76826 , H01L27/3246 , H01L27/3283 , H01L51/0545 , H01L51/56 , Y02P80/30
摘要： Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.
摘要翻译：对设置有光催化性导电膜和绝缘膜的基板的表面进行氧化处理; 进行硅烷偶联剂的处理，形成硅烷偶联剂膜，将基材的表面改性为疏液性; 并且用能量大于或等于用于形成光催化性导电膜的材料的带隙的能量（小于等于390nm）的光照射衬底的表面，使得只有硅烷偶联光催化性导电膜的表面上的试剂膜分解，光催化性导电膜的表面可以改性为亲液性的。

5. 发明申请

US20110031494A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20110031494A1
公开(公告)日：2011-02-10
申请号：US12911041
申请日：2010-10-25
申请人： Gen FUJII , Erika TAKAHASHI
发明人： Gen FUJII , Erika TAKAHASHI
IPC分类号： H01L29/12 , H01L21/36
CPC分类号： H01L51/0022 , H01L51/0533 , H01L51/0545
摘要： A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在透光衬底上形成栅电极，在栅电极和衬底上形成含有无机材料的栅极绝缘层，在栅极上形成含有可光聚合反应性基团的有机层通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层，通过除去除了聚合的有机层的残留物形成有机聚合物层，形成在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜，通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极，形成栅电极上的半导体层，源极和漏极。

6. 发明申请

US20100059749A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20100059749A1
公开(公告)日：2010-03-11
申请号：US12547119
申请日：2009-08-25
申请人： Erika TAKAHASHI , Takayuki KATO , Hidekazu MIYAIRI , Yasuhiro JINBO
发明人： Erika TAKAHASHI , Takayuki KATO , Hidekazu MIYAIRI , Yasuhiro JINBO
IPC分类号： H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78618
摘要： A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous semiconductor, and source and drain regions over and in contact with the pair of crystal regions. The source and drain regions include a microcrystalline semiconductor layer to which an impurity imparting one conductivity type is added.
摘要翻译：提供一种薄膜晶体管，其包括在衬底上的栅极电极层，栅极电极层上的栅极绝缘层，在栅极绝缘层上包括非晶半导体的层，包括非晶形的层上的一对晶体区域半导体以及与该对晶体区域接触的源极和漏极区域。源区和漏区包括添加有赋予一种导电类型的杂质的微晶半导体层。

7. 发明申请

US20080099759A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20080099759A1
公开(公告)日：2008-05-01
申请号：US11923349
申请日：2007-10-24
申请人： Gen FUJII , Erika TAKAHASHI
发明人： Gen FUJII , Erika TAKAHASHI
IPC分类号： H01L51/40 , H01L51/50
CPC分类号： H01L51/0022 , H01L51/0533 , H01L51/0545
摘要： A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在透光衬底上形成栅电极，在栅电极和衬底上形成含有无机材料的栅极绝缘层，在栅极上形成含有可光聚合反应性基团的有机层通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层，通过除去除了聚合的有机层的残留物形成有机聚合物层，形成在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜，通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极，形成栅电极上的半导体层，源极和漏极。

8. 发明申请

US20100090211A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20100090211A1
公开(公告)日：2010-04-15
申请号：US12639274
申请日：2009-12-16
申请人： Gen FUJII , Erika TAKAHASHI
发明人： Gen FUJII , Erika TAKAHASHI
IPC分类号： H01L51/10 , H01L33/00
CPC分类号： H01L51/0022 , H01L51/0533 , H01L51/0545
摘要： A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在透光衬底上形成栅电极，在栅电极和衬底上形成含有无机材料的栅极绝缘层，在栅极上形成含有可光聚合反应性基团的有机层通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层，通过除去除了聚合的有机层的残留物形成有机聚合物层，形成在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜，通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极，形成栅电极上的半导体层，源极和漏极。

9. 发明授权

US07646015B2 Manufacturing method of semiconductor device and semiconductor device 有权
公开(公告)号：US07646015B2
公开(公告)日：2010-01-12
申请号：US11923349
申请日：2007-10-24
申请人： Gen Fujii , Erika Takahashi
发明人： Gen Fujii , Erika Takahashi
IPC分类号： H01L51/40
CPC分类号： H01L51/0022 , H01L51/0533 , H01L51/0545
摘要： A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

10. 发明申请

US20090109388A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20090109388A1
公开(公告)日：2009-04-30
申请号：US12258866
申请日：2008-10-27
申请人： Erika TAKAHASHI , Gen Fujii , Shuji Fukai , Takeshi Nishi
发明人： Erika TAKAHASHI , Gen Fujii , Shuji Fukai , Takeshi Nishi
IPC分类号： G02F1/1339 , G02F1/1333 , G02F1/1337
CPC分类号： G02F1/13394 , G02F1/13392 , G02F2202/28
摘要： To control the positioning of a spacer more accurately in a liquid crystal display device to prevent display defects due to incorrect positioning in a display region. To provide a liquid crystal display device with higher image quality and reliability, and to provide a method for manufacturing the liquid crystal display device with high yield. In a liquid crystal display device, a region onto which a spherical spacer is discharged is subjected to liquid-repellent treatment in order to reduce the wettability with respect to a liquid in which the spherical spacer is dispersed. The liquid (the droplet) does not spread over the liquid-repellent region and is dried while moving the spherical spacer toward the center of the liquid. Thus, incorrect positioning shortly after discharging, which has been caused by the loss of control in the liquid, can be corrected by moving the spherical spacer while drying the liquid.
摘要翻译：为了在液晶显示装置中更准确地控制间隔物的定位，以防止由于在显示区域中的不正确定位而引起的显示缺陷。提供具有更高图像质量和可靠性的液晶显示装置，并且提供一种以高产量制造液晶显示装置的方法。在液晶显示装置中，为了降低相对于其中分散有球形间隔物的液体的润湿性，对排出球形间隔物的区域进行拒水处理。液体（液滴）不会在液体排斥区域上扩散，并且在将球形间隔物朝向液体的中心移动的同时被干燥。因此，可以通过在干燥液体的同时移动球形间隔物来校正由于液体中的失控而引起的放电后不正确的定位。

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