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1. 发明授权

US09323465B2 Systems and methods for persistent atomic storage operations 有权
标题翻译：用于持续原子存储操作的系统和方法
公开(公告)号：US09323465B2
公开(公告)日：2016-04-26
申请号：US14627869
申请日：2015-02-20
申请人： FUSION-IO, LLC
发明人： David Flynn , Robert Wipfel , David Nellans , John Strasser
IPC分类号： G06F12/00 , G06F3/06 , G06F12/02 , G06F13/16 , G11C16/06
CPC分类号： G06F3/0619 , G06F3/061 , G06F3/0629 , G06F3/0631 , G06F3/0634 , G06F3/0643 , G06F3/065 , G06F3/0679 , G06F3/0688 , G06F12/00 , G06F12/0246 , G06F13/16 , G11C16/06
摘要： A storage layer presents logical address space of a non-volatile storage device. The storage layer maintains logical interfaces to the non-volatile storage device, which may include arbitrary, any-to-any mappings between logical identifiers and storage resources. Data may be stored on the non-volatile storage device in a contextual format, which includes persistent metadata that defines the logical interface of the data. The storage layer may modify the logical interface of data that is stored in the contextual format. The modified logical interface may be inconsistent with the existing contextual format of the data on the non-volatile storage media. The storage layer may provide access to the data in the inconsistent contextual format through the modified logical interface. The contextual format of the data may be updated to be consistent with the modified logical interface in a write out-of-place storage operation.
摘要翻译：存储层呈现非易失性存储设备的逻辑地址空间。存储层维护到非易失性存储设备的逻辑接口，其可以包括逻辑标识符和存储资源之间的任意对任何对任何映射。数据可以以包括定义数据的逻辑接口的持久性元数据的上下文格式存储在非易失性存储设备上。存储层可以修改以上下文格式存储的数据的逻辑接口。经修改的逻辑接口可能与非易失性存储介质上的数据的现有上下文格式不一致。存储层可以通过修改的逻辑接口提供对以不一致的上下文格式的数据的访问。可以在写入不当存储操作中更新与修改的逻辑接口一致的数据的上下文格式。

2. 发明申请

US20150149862A1 ADJUSTABLE READ TIME FOR MEMORY 有权
标题翻译：内存可调整读取时间
公开(公告)号：US20150149862A1
公开(公告)日：2015-05-28
申请号：US14613216
申请日：2015-02-03
申请人： Fusion-io, LLC
发明人： Jea Woong Hyun , Barrett Edwards , David Nellans
IPC分类号： G11C16/26 , G11C16/32 , G06F11/10
CPC分类号： G11C16/26 , G06F11/1068 , G11C16/32
摘要： Apparatuses, systems, methods, and computer program products are disclosed for controlling a read time of an electronic memory device. A method includes reading data from an integrated circuit of storage using a read time for the integrated circuit of storage. A method includes adjusting a read time for an integrated circuit of storage. A method includes reading data from a same integrated circuit of storage using an adjusted read time for the integrated circuit of storage.
摘要翻译：公开了用于控制电子存储器件的读取时间的装置，系统，方法和计算机程序产品。一种方法包括使用存储集成电路的读取时间从存储的集成电路读取数据。一种方法包括调整存储集成电路的读取时间。一种方法包括使用用于存储的集成电路的经调整的读取时间从相同的存储集成电路读取数据。

3. 发明授权

US09424944B2 Detecting voltage threshold drift 有权
标题翻译：检测电压阈值漂移
公开(公告)号：US09424944B2
公开(公告)日：2016-08-23
申请号：US14599240
申请日：2015-01-16
申请人： FUSION-IO, LLC
发明人： Hairong Sun , Jea Hyun , Rick Lucky , John Strasser
IPC分类号： G11C16/04 , G11C16/34 , G11C16/26
CPC分类号： G11C16/3404 , G11C7/14 , G11C11/5642 , G11C16/26 , G11C29/021 , G11C29/028
摘要： Apparatuses, systems, methods, and computer program products are disclosed for detecting voltage threshold drift. A method includes programming a predetermined pattern to one page of at least three pages of a set of memory cells. A pattern may have a configuration to reduce a number of bit transitions between abodes of a set of memory cells based on a coding scheme for the set of memory cells. A method includes reading data from a different page of at least three pages. A method includes determining a direction for adjusting a read voltage threshold for a set of memory cells based on read data.
摘要翻译：公开了用于检测电压阈值漂移的装置，系统，方法和计算机程序产品。一种方法包括将预定图案编程为一组存储器单元的至少三页的一页。模式可以具有基于用于该组存储器单元的编码方案来减少一组存储器单元的位置之间的位数转换的配置。一种方法包括从至少三页的不同页面读取数据。一种方法包括基于读取的数据确定用于调整一组存储器单元的读取电压阈值的方向。

4. 发明授权

US09431119B2 Adjustable read time for memory 有权
标题翻译：可调节内存读取时间
公开(公告)号：US09431119B2
公开(公告)日：2016-08-30
申请号：US14613216
申请日：2015-02-03
申请人： Fusion-io, LLC
发明人： Jea Woong Hyun , Barrett Edwards , David Nellans
IPC分类号： G11C16/06 , G11C16/26 , G11C16/32 , G06F11/10
CPC分类号： G11C16/26 , G06F11/1068 , G11C16/32
摘要： Apparatuses, systems, methods, and computer program products are disclosed for controlling a read time of an electronic memory device. A method includes reading data from an integrated circuit of storage using a read time for the integrated circuit of storage. A method includes adjusting a read time for an integrated circuit of storage. A method includes reading data from a same integrated circuit of storage using an adjusted read time for the integrated circuit of storage.
摘要翻译：公开了用于控制电子存储器件的读取时间的装置，系统，方法和计算机程序产品。一种方法包括使用存储集成电路的读取时间从存储的集成电路读取数据。一种方法包括调整存储集成电路的读取时间。一种方法包括使用用于存储的集成电路的经调整的读取时间从相同的存储集成电路读取数据。

5. 发明申请

US20160125951A1 DETECTING VOLTAGE THRESHOLD DRIFT 有权
标题翻译：检测电压阈值
公开(公告)号：US20160125951A1
公开(公告)日：2016-05-05
申请号：US14599240
申请日：2015-01-16
申请人： Fusion-Io, LLC
发明人： Hairong Sun , Jea Hyun , Rick Lucky , John Strasser
IPC分类号： G11C16/34 , G11C16/26
CPC分类号： G11C16/3404 , G11C7/14 , G11C11/5642 , G11C16/26 , G11C29/021 , G11C29/028
摘要： Apparatuses, systems, methods, and computer program products are disclosed for detecting voltage threshold drift. A method includes programming a predetermined pattern to one page of at least three pages of a set of memory cells. A pattern may have a configuration to reduce a number of bit transitions between abodes of a set of memory cells based on a coding scheme for the set of memory cells. A method includes reading data from a different page of at least three pages. A method includes determining a direction for adjusting a read voltage threshold for a set of memory cells based on read data.
摘要翻译：公开了用于检测电压阈值漂移的装置，系统，方法和计算机程序产品。一种方法包括将预定图案编程为一组存储器单元的至少三页的一页。模式可以具有基于用于该组存储器单元的编码方案来减少一组存储器单元的位置之间的位数转换的配置。一种方法包括从至少三页的不同页面读取数据。一种方法包括基于读取的数据确定用于调整一组存储器单元的读取电压阈值的方向。

6. 发明申请

US20150160879A1 SYSTEMS AND METHODS FOR ATOMIC STORAGE 有权
标题翻译：原子储存的系统和方法
公开(公告)号：US20150160879A1
公开(公告)日：2015-06-11
申请号：US14627869
申请日：2015-02-20
申请人： FUSION-IO, LLC
发明人： David Flynn , Robert Wipfel , David Nellans , John Strasser
IPC分类号： G06F3/06
CPC分类号： G06F3/0619 , G06F3/061 , G06F3/0629 , G06F3/0631 , G06F3/0634 , G06F3/0643 , G06F3/065 , G06F3/0679 , G06F3/0688 , G06F12/00 , G06F12/0246 , G06F13/16 , G11C16/06
摘要： A storage layer presents logical address space of a non-volatile storage device. The storage layer maintains logical interfaces to the non-volatile storage device, which may include arbitrary, any-to-any mappings between logical identifiers and storage resources. Data may be stored on the non-volatile storage device in a contextual format, which includes persistent metadata that defines the logical interface of the data. The storage layer may modify the logical interface of data that is stored in the contextual format. The modified logical interface may be inconsistent with the existing contextual format of the data on the non-volatile storage media. The storage layer may provide access to the data in the inconsistent contextual format through the modified logical interface. The contextual format of the data may be updated to be consistent with the modified logical interface in a write out-of-place storage operation.
摘要翻译：存储层呈现非易失性存储设备的逻辑地址空间。存储层维护到非易失性存储设备的逻辑接口，其可以包括逻辑标识符和存储资源之间的任意对任何对任何映射。数据可以以包括定义数据的逻辑接口的持久性元数据的上下文格式存储在非易失性存储设备上。存储层可以修改以上下文格式存储的数据的逻辑接口。经修改的逻辑接口可能与非易失性存储介质上的数据的现有上下文格式不一致。存储层可以通过修改的逻辑接口提供对以不一致的上下文格式的数据的访问。可以在写入不当存储操作中更新与修改的逻辑接口一致的数据的上下文格式。

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