专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20180072093A1 DEVICE FOR TENSIONING A CANVAS ON A FRAME AND KIT FOR ASSEMBLING A FRAME FOR CANVAS 审中-公开
公开(公告)号：US20180072093A1
公开(公告)日：2018-03-15
申请号：US15796783
申请日：2017-10-28
申请人： Francois Roy
发明人： Francois Roy
IPC分类号： B44D3/18
摘要： The invention relates to a device for tensioning a canvas on a frame, which is for assembling two bars the ends of which comprise a groove. The device comprises: an optional sheath intended to be immobilized in a groove; a spacer comprising a central portion from which extend two lateral portions each having a bearing face coming to abut against the bottom of the sheath; a tensioner comprising a central portion from which extend securing means for securing the tensioner to the bars, via the sheath; a connecting member for connecting the spacer to the tensioner, and means for bringing the spacer closer to the tensioner, wherein the spacer being brought closer to the tensioner will cause each bar to translate along its longitudinal axis so as to space the bars apart from each other while keeping them perpendicular to each other.

2. 外观设计

USD798697S1 Expanding corner for an art canvas frame 有权
公开(公告)号：USD798697S1
公开(公告)日：2017-10-03
申请号：US29573095
申请日：2016-08-02
申请人： Francois Roy
设计人： Francois Roy

3. 发明授权

US08686483B2 Charge transfer photosite 有权
标题翻译：电荷转移photoite
公开(公告)号：US08686483B2
公开(公告)日：2014-04-01
申请号：US13398287
申请日：2012-02-16
申请人： Julien Michelot , Francois Roy , Frederic Lalanne
发明人： Julien Michelot , Francois Roy , Frederic Lalanne
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1461 , H01L27/14641 , H01L27/14643
摘要： A photosite may include, in a semi-conductor substrate, a photodiode pinched in the direction of the depth of the substrate including a charge storage zone, and a charge transfer transistor to transfer the stored charge. The charge storage zone may include a pinching in a first direction passing through the charge transfer transistor defining a constriction zone adjacent to the charge transfer transistor.
摘要翻译：光电晶体可以在半导体衬底中包括在包括电荷存储区的衬底的深度方向上夹持的光电二极管以及用于传送存储的电荷的电荷转移晶体管。电荷存储区可以包括在通过电荷转移晶体管的第一方向上的夹持，所述电荷转移晶体管限定与电荷转移晶体管相邻的收缩区。

4. 发明授权

US08456885B2 Random access memory circuit 有权
标题翻译：随机存取存储器电路
公开(公告)号：US08456885B2
公开(公告)日：2013-06-04
申请号：US12535261
申请日：2009-08-04
申请人： Derek Tolmie , Arnaud Laflaquiere , Francois Roy
发明人： Derek Tolmie , Arnaud Laflaquiere , Francois Roy
IPC分类号： G11C11/36
CPC分类号： G11C13/04 , H01L27/14609 , H04N5/335 , H04N5/37452 , H04N5/37457
摘要： A random access memory circuit includes a plurality of pixels, each having a light sensitive area and a light blocking layer arranged over at least each of the light sensitive areas. In an alternative embodiment, the circuit includes a plurality of memory elements for storing data. Each memory element may comprise a bit node formed between a photodiode, having a light arranged over the photodiode, and a switching element, where data may be stored. The circuit may also include a plurality of reading and writing circuits for reading and writing data to and from the memory cells.
摘要翻译：随机存取存储器电路包括多个像素，每个像素具有光敏区域和在至少每个光敏区域上布置的遮光层。在替代实施例中，电路包括用于存储数据的多个存储元件。每个存储元件可以包括形成在具有布置在光电二极管上的光的光电二极管之间的位节点和可以存储数据的开关元件。电路还可以包括用于从存储器单元读取和写入数据的多个读取和写入电路。

5. 发明申请

US20130049155A1 PHOTOSITE WITH PINNED PHOTODIODE 有权
标题翻译：带有胶片的光泽
公开(公告)号：US20130049155A1
公开(公告)日：2013-02-28
申请号：US13529045
申请日：2012-06-21
申请人： Francois Roy , Julien Michelot
发明人： Francois Roy , Julien Michelot
IPC分类号： H01L31/0352 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/14607 , H01L27/1461 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L31/0352
摘要： A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well.
摘要翻译：在半导体衬底中形成有一个光电子结构，并包括一个限制在与衬底表面正交的方向上的光电二极管。光电二极管包括用于存储形成在具有第一导电类型的上半导体区域中的电荷的半导体区，并且包括与第一导电类型相反的第二导电类型的主阱，并且在与第一导电类型的表面平行的第一方向上横向固定基质。光电二极管还包括另外的半导体区域，该半导体区域包括具有第二导电类型的另外的阱，该第二导电类型被埋在主阱中并与主阱接触。

6. 发明申请

US20120161213A1 MATRIX IMAGING DEVICE HAVING PHOTOSITES WITH GLOBAL SHUTTER CHARGE TRANSFER 有权
标题翻译：具有全球快门充电转移的光电子的矩阵成像装置
公开(公告)号：US20120161213A1
公开(公告)日：2012-06-28
申请号：US13241666
申请日：2011-09-23
申请人： Francois Roy , Julien Michelot
发明人： Francois Roy , Julien Michelot
IPC分类号： H01L31/02
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14641 , H01L27/14679 , H01L31/112
摘要： An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor region for reading charge specific to said photosite, and a charge transfer circuit configured so as to permit a transfer of charge between the charge storage region and the charge reading region. Each photosite further includes at least one buried first electrode. At least one part of that buried first electrode bounds at least one part of the charge storage region. The charge transfer circuit for each photosite includes at least one second buried electrode.
摘要翻译：成像装置形成在半导体衬底中。该装置包括矩阵阵列的光斑。每个光斑由用于存储电荷的半导体区域，用于读取对所述光斑特定的电荷的半导体区域和电荷转移电路构成，以使得能够在电荷存储区域和电荷读取区域之间传输电荷。每个光斑还包括至少一个埋入的第一电极。该埋置的第一电极的至少一部分界定电荷存储区域的至少一部分。每个光电子的电荷转移电路包括至少一个第二埋电极。

7. 发明授权

US08053801B2 Monolithic photodetector 有权
标题翻译：单片光电探测器
公开(公告)号：US08053801B2
公开(公告)日：2011-11-08
申请号：US12704797
申请日：2010-02-12
申请人： Cyril Fellous , Nicolas Hotellier , Christophe Aumont , Francois Roy
发明人： Cyril Fellous , Nicolas Hotellier , Christophe Aumont , Francois Roy
IPC分类号： H01L33/00
CPC分类号： H01L27/14625 , G02B6/1221 , H01L27/14621 , H01L27/14627
摘要： A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R1R2R3SiOSiR1R2R3 where R1, R2, and R3 are any carbonaceous or metal substituents and where one of R1, R2, or R3 is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.
摘要翻译：一种光电探测器，其包括形成在半导体衬底中的光电二极管，以及波导元件，所述波导元件由高折射率材料块形成，所述波导元件在与所述衬底叠加的电介质的厚层中的所述光电二极管之上延伸，所述厚层至少大部分形成的硅氧烷，该嵌段由通式为R 1 R 2 R 3 SiOSi R 1 R 3 R 3的聚合物形成，其中R 1，R 2和R 3为任何碳质或金属取代基，并且其中R 1，R 2或R 3中的一个为具有至少四个碳原子的碳取代基， /或至少一个氧原子。

8. 发明申请

US20110140220A1 MICROELECTRONIC DEVICE, IN PARTICULAR BACK SIDE ILLUMINATED IMAGE SENSOR, AND PRODUCTION PROCESS 有权
标题翻译：微电子装置，特别是背面照明图像传感器，以及生产过程
公开(公告)号：US20110140220A1
公开(公告)日：2011-06-16
申请号：US12963792
申请日：2010-12-09
申请人： Michel Marty , Didier Dutartre , Francois Roy , Pascal Besson , Jens Prima
发明人： Michel Marty , Didier Dutartre , Francois Roy , Pascal Besson , Jens Prima
IPC分类号： H01L31/0236 , H01L31/0232 , H01L31/18
CPC分类号： H01L27/14687 , H01L21/2007 , H01L21/30604 , H01L21/76256 , H01L27/14632 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L31/028 , H01L31/0312 , H01L31/1812
摘要： A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.
摘要翻译：微电子器件的制造方法包括制造第一半导体衬底，该第一半导体衬底包括存在于衬底的第一侧和第二侧之间的第一层和第二层。第一电子部件和互连部分在第二面上和上方产生。然后通过从第一侧施加的第一选择性蚀刻将衬底减薄，并停止在第一层上，随后在第二层上进行第二选择性蚀刻停止。第二衬底附接在互连部分上。电子部件可以包括通过第二层照射的光电子器件。

9. 发明授权

US07880253B2 Integrated optical filter 有权
标题翻译：集成滤光片
公开(公告)号：US07880253B2
公开(公告)日：2011-02-01
申请号：US12157936
申请日：2008-06-13
申请人： Francois Roy , Tarek Lule , Samir Guerroudj
发明人： Francois Roy , Tarek Lule , Samir Guerroudj
IPC分类号： H01L21/76
CPC分类号： H01L31/02162 , H01L27/14621 , H01L27/14685
摘要： The disclosure relates to an integrated circuit comprising at least one photosensitive cell. The cell includes a photosensitive element, an input face associated with the said photosensitive element, an optical filter situated in at least one optical path leading to the photosensitive element and an interconnection part situated between the photosensitive element and the input face. The optical filter is disposed between the photosensitive element and the surface of the interconnection part closest to the input face. In particular, the optical filter can be disposed within the interconnection part. The disclosure also proposes that the filter be formed using a glass comprising cerium sulphide or at least one metal oxide.
摘要翻译：本公开涉及包括至少一个感光单元的集成电路。单元包括感光元件，与所述感光元件相关联的输入面，位于通向感光元件的至少一个光路中的光学滤光器和位于感光元件和输入面之间的互连部件。光学滤光器设置在感光元件和最靠近输入面的互连部件的表面之间。特别地，滤光器可以布置在互连部分内。本公开还提出使用包含硫化铈或至少一种金属氧化物的玻璃来形成过滤器。

10. 发明授权

US07736932B2 Method of manufacturing sensor with photodiode and charge transfer transistor 有权
标题翻译：制造具有光电二极管和电荷转移晶体管的传感器的方法
公开(公告)号：US07736932B2
公开(公告)日：2010-06-15
申请号：US11960024
申请日：2007-12-19
申请人： Francois Roy
发明人： Francois Roy
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L29/66621 , H01L29/7834
摘要： A method of manufacturing a photodiode sensor and an associated charge transfer transistor includes forming an insulation region on a substrate, forming the diode on a first side of the insulation region with the diode being self-aligned on the insulation region, and replacing the insulation region by a gate of the charge transfer transistor. The invention has particular utility in the manufacture of CMOS or CCD image sensors.
摘要翻译：一种制造光电二极管传感器和相关电荷转移晶体管的方法，包括在衬底上形成绝缘区域，在绝缘区域的第一侧上形成二极管，二极管在绝缘区域上自对准，并且更换绝缘区域通过电荷转移晶体管的栅极。本发明在制造CMOS或CCD图像传感器方面具有特殊的用途。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式