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1. 发明授权

US08885849B2 Component having a micromechanical microphone structure, and method for operating such a microphone component 有权
标题翻译：具有微机械麦克风结构的部件，以及用于操作这种麦克风组件的方法
公开(公告)号：US08885849B2
公开(公告)日：2014-11-11
申请号：US13138276
申请日：2010-01-11
申请人： Alberto Arias-Drake , Thomas Buck , Jochen Zoellin , Juan Ramos-Martos , Franz Laermer , Antonio Ragel-Morales , Joaquin Ceballos-Caceres , Jose M. Mora-Gutierrez
发明人： Alberto Arias-Drake , Thomas Buck , Jochen Zoellin , Juan Ramos-Martos , Franz Laermer , Antonio Ragel-Morales , Joaquin Ceballos-Caceres , Jose M. Mora-Gutierrez
IPC分类号： H04B15/00 , H04R19/01 , H04R3/00
CPC分类号： H04R3/007 , H04R19/016
摘要： A concept is proposed for a MEMS microphone which may be operated at a relatively low voltage level and still have comparatively high sensitivity. The component according to the present invention includes a micromechanical microphone structure having an acoustically active diaphragm which functions as a deflectable electrode of a microphone capacitor (1), and a stationary acoustically permeable counterelement which functions as a counter electrode of the microphone capacitor (1). The component also includes means for applying a high-frequency clock signal (2) to the microphone capacitor (1) and for applying the inverted clock signal (2′) to an adjustable but acoustically inactive compensation capacitor (7), an integrating operational amplifier (3) which integrates the sum of the current flow through the microphone capacitor (1) and the current flow through the compensation capacitor (7), a demodulator (4) for the output signal of the integrating operational amplifier (3), the demodulator being synchronized with the clock signal (2), and a low-pass filter for obtaining a microphone signal which corresponds to the changes in capacitance of the microphone capacitor (1), based on the output signal of the demodulator (4).
摘要翻译：对于可以在相对低的电压水平操作且仍具有较高灵敏度的MEMS麦克风提出了一个概念。根据本发明的部件包括具有用作麦克风电容器（1）的可偏转电极的声学活动膜片的微机械麦克风结构和用作麦克风电容器（1）的对电极的静止声透射反射器，。该组件还包括用于将高频时钟信号（2）施加到麦克风电容器（1）并用于将反相时钟信号（2'）施加到可调谐但无声补偿电容器（7）的装置，积分运算放大器（3），其集成了通过麦克风电容器（1）的电流和通过补偿电容器（7）的电流之和，用于积分运算放大器（3）的输出信号的解调器（4），解调器与时钟信号（2）同步，以及低通滤波器，用于基于解调器（4）的输出信号获得与麦克风电容器（1）的电容变化相对应的麦克风信号。

2. 发明授权

US08329555B2 Method for producing a capping wafer for a sensor 有权
标题翻译：一种用于生产用于传感器的封盖晶片的方法
公开(公告)号：US08329555B2
公开(公告)日：2012-12-11
申请号：US12734994
申请日：2008-10-20
申请人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Andreas Scheurle
发明人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Andreas Scheurle
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： B81C1/00301 , B81B2207/095 , H01L21/76879 , H01L21/76898 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/05644 , H01L2224/13025 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2924/00014
摘要： A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.
摘要翻译：一种用于制造具有至少一个盖的传感器的封盖晶片的方法包括：产生通过晶片延伸的接触通孔，并且在其后随后通过导电材料填充接触通孔。

3. 发明授权

US08148234B2 Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure 失效
标题翻译：半导体结构的制造方法以及相应的半导体结构
公开(公告)号：US08148234B2
公开(公告)日：2012-04-03
申请号：US12282842
申请日：2007-03-09
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： H01L21/76
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
摘要翻译：提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。同样提供相应的半导体结构。

4. 发明授权

US07898046B2 Microelectromechanical systems encapsulation process 有权
标题翻译：微机电系统封装工艺
公开(公告)号：US07898046B2
公开(公告)日：2011-03-01
申请号：US12506219
申请日：2009-07-20
申请人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译：描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。涂层在器件释放后，但在封装层封口之前应用。或者，可以在封装之前将抗静电涂层直接施加到释放的装置。

5. 发明申请

US20110012248A1 Method for producing a capping wafer for a sensor 有权
标题翻译：一种用于生产用于传感器的封盖晶片的方法
公开(公告)号：US20110012248A1
公开(公告)日：2011-01-20
申请号：US12734994
申请日：2008-10-20
申请人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Andreas Scheurle
发明人： Frank Reichenbach , Franz Laermer , Silvia Kronmueller , Andreas Scheurle
IPC分类号： H01L23/15 , H01L21/60 , H01R9/00 , B05D5/12 , C25D5/02
CPC分类号： B81C1/00301 , B81B2207/095 , H01L21/76879 , H01L21/76898 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/05644 , H01L2224/13025 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2924/00014
摘要： A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.
摘要翻译：一种用于制造具有至少一个盖的传感器的封盖晶片的方法包括：产生通过晶片延伸的接触通孔，并且在其后随后通过导电材料填充接触通孔。

6. 发明申请

US20100203739A1 METHOD FOR ETCHING A LAYER ON A SILICON SEMICONDUCTOR SUBSTRATE 有权
标题翻译：在硅半导体衬底上蚀刻层的方法
公开(公告)号：US20100203739A1
公开(公告)日：2010-08-12
申请号：US12452692
申请日：2008-07-02
申请人： Volker Becker , Franz Laermer , Tino Fuchs , Christina Leinenbach
发明人： Volker Becker , Franz Laermer , Tino Fuchs , Christina Leinenbach
IPC分类号： H01L21/306 , C23F1/08
CPC分类号： H01L21/3065 , B81C1/00531 , B81C1/00595 , B81C2201/0132 , B81C2201/0138 , H01L21/02019 , H01L21/30621 , H01L21/32135
摘要： A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.
摘要翻译：借助于选自ClF3和/或ClF5的蚀刻气体，通过SiGe混合半导体层的干法化学蚀刻来选择性地蚀刻硅半导体衬底上的SiGe混合半导体层的方法，包括添加到蚀刻气体中的Cl 2和/或HCl。

7. 发明申请

US20100033060A1 BENDING TRANSDUCER FOR GENERATING ELECTRICAL ENERGY FROM MECHANICAL DEFORMATIONS 有权
标题翻译：用于从机械变形产生电能的弯曲传感器
公开(公告)号：US20100033060A1
公开(公告)日：2010-02-11
申请号：US12538389
申请日：2009-08-10
申请人： Franz Laermer , Thorsten Pannek , Ralf Reichenbach , Marian Keck
发明人： Franz Laermer , Thorsten Pannek , Ralf Reichenbach , Marian Keck
IPC分类号： H02N2/18
CPC分类号： H01L41/1134 , B60C23/041 , H01L41/0475
摘要： A bending transducer device for generating electrical energy from deformations, and a circuit module which has such a bending transducer. The bending transducer includes at least one electrically deformable, vibration-capable, electrically conductive support structure, one piezoelectric element and a first contacting element, the conductive support structure having a first restraining area and a second restraining area for restraining the support structure, the piezoelectric element being designed and situated on the support structure in such a way that the piezoelectric element is deformable due to the deformation of the support structure caused by vibrations, and a first electrode for picking up the voltage generated by the deformation of the piezoelectric element is formed and contacted by the support structure, the first contacting element being connected electrically conductively to the support structure outside the first restraining area and the second restraining area.
摘要翻译：一种用于从变形产生电能的弯曲换能器装置，以及具有这种弯曲换能器的电路模块。弯曲换能器包括至少一个可电动变形的，具有振动能力的导电支撑结构，一个压电元件和第一接触元件，所述导电支撑结构具有用于约束支撑结构的第一约束区和第二约束区，元件被设计并且位于支撑结构上，使得压电元件由于由振动引起的支撑结构的变形而变形，并且形成用于拾取由压电元件的变形产生的电压的第一电极并且由所述支撑结构接触，所述第一接触元件电连接到所述第一约束区域和所述第二约束区域外的所述支撑结构。

8. 发明授权

US07642545B2 Layer and system with a silicon layer and a passivation layer, method for production of a passivation layer on a silicon layer and use thereof 有权
标题翻译：具有硅层和钝化层的层和系统，在硅层上制造钝化层的方法及其用途
公开(公告)号：US07642545B2
公开(公告)日：2010-01-05
申请号：US10520886
申请日：2003-05-06
申请人： Andrea Urban , Franz Laermer , Klaus Breitschwerdt
发明人： Andrea Urban , Franz Laermer , Klaus Breitschwerdt
IPC分类号： H01L21/00
CPC分类号： B81C1/00571 , B81B2203/033 , B81C2201/016 , H01L21/0332
摘要： A layer system and a method for producing the layer system are provided, the layer system having a silicon layer, on which at least regionally a passivating layer is superficially deposited, the passivating layer having a first, at least largely inorganic partial layer and a second, at least largely polymer partial layer. The method includes producing on the silicon layer, a first, inorganic partial layer, and producing on this first partial layer a second, polymer partial layer, which form the passivating layer. The production of the intermediate layer occurs in such a way that the intermediate layer in its surface area adjoining the first partial layer is composed as the first partial layer, and the intermediate layer in its surface area adjoining the second partial layer is composed as the second partial layer. The composition of the intermediate layer transitions, either continuously or in steps, from the composition corresponding to the first partial layer into the composition corresponding to the second partial layer.
摘要翻译：提供了一种用于制造层系统的层系统和方法，所述层系统具有硅层，其上至少区域地表面钝化钝化层，所述钝化层具有第一至少大部分无机部分层和第二层，至少主要是聚合物部分层。该方法包括在硅层上制备第一无机部分层，并在该第一部分层上制备形成钝化层的第二聚合物部分层。中间层的制造以与第一部分层相邻的表面区域的中间层构成为第一部分层的方式发生，并且与其邻接的第二部分层的表面区域中的中间层构成为第二部分层部分层。中间层的组成可以从对应于第一部分层的组合物连续地或逐步地转变成对应于第二部分层的组合物。

9. 发明授权

US07582514B2 Microelectromechanical systems encapsulation process with anti-stiction coating 有权
标题翻译：微机电系统封装工艺与抗静电涂层
公开(公告)号：US07582514B2
公开(公告)日：2009-09-01
申请号：US11844844
申请日：2007-08-24
申请人： Cyril Vancura , Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Cyril Vancura , Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/44
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450° C. is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译：描述了一种封装的MEMS工艺，其包括在450℃以上的加工步骤下稳定的高温抗静电涂层。涂层在器件释放后，但在封装层封口之前应用。或者，可以在封装之前将抗静电涂层直接施加到释放的装置。

10. 发明授权

US07563633B2 Microelectromechanical systems encapsulation process 有权
标题翻译：微机电系统封装工艺
公开(公告)号：US07563633B2
公开(公告)日：2009-07-21
申请号：US11510040
申请日：2006-08-25
申请人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L21/00
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译：描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。涂层在器件释放后，但在封装层封口之前应用。或者，可以在封装之前将抗静电涂层直接施加到释放装置。

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